DE60209610T2 - Verfahren zur Herstellung eines InGaAsN Halbleiters mit hoher Qualität - Google Patents

Verfahren zur Herstellung eines InGaAsN Halbleiters mit hoher Qualität Download PDF

Info

Publication number
DE60209610T2
DE60209610T2 DE60209610T DE60209610T DE60209610T2 DE 60209610 T2 DE60209610 T2 DE 60209610T2 DE 60209610 T DE60209610 T DE 60209610T DE 60209610 T DE60209610 T DE 60209610T DE 60209610 T2 DE60209610 T2 DE 60209610T2
Authority
DE
Germany
Prior art keywords
layer
ingaasn
growth
range
gaas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60209610T
Other languages
German (de)
English (en)
Other versions
DE60209610D1 (de
Inventor
Tetsuya Palo Alto Takeuchi
Ying-Lan Palo Alto Chang
David P. Palo Alto Bour
Michael H. Palo Alto leary
Michael R. T. Palo Alto Tan
Andy San Jose Luan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Agilent Technologies Inc
Original Assignee
Agilent Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agilent Technologies Inc filed Critical Agilent Technologies Inc
Application granted granted Critical
Publication of DE60209610D1 publication Critical patent/DE60209610D1/de
Publication of DE60209610T2 publication Critical patent/DE60209610T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2907—Materials being Group IIIA-VA materials
    • H10P14/2911—Arsenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
    • H10P14/3221—Arsenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3242—Structure
    • H10P14/3244—Layer structure
    • H10P14/3251—Layer structure consisting of three or more layers
    • H10P14/3252—Alternating layers, e.g. superlattice
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3416—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3421—Arsenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3444—P-type

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Bipolar Transistors (AREA)
  • Semiconductor Lasers (AREA)
DE60209610T 2002-03-25 2002-10-17 Verfahren zur Herstellung eines InGaAsN Halbleiters mit hoher Qualität Expired - Fee Related DE60209610T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/106,472 US6764926B2 (en) 2002-03-25 2002-03-25 Method for obtaining high quality InGaAsN semiconductor devices
US106472 2002-03-25

Publications (2)

Publication Number Publication Date
DE60209610D1 DE60209610D1 (de) 2006-05-04
DE60209610T2 true DE60209610T2 (de) 2007-01-11

Family

ID=27804347

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60209610T Expired - Fee Related DE60209610T2 (de) 2002-03-25 2002-10-17 Verfahren zur Herstellung eines InGaAsN Halbleiters mit hoher Qualität

Country Status (4)

Country Link
US (1) US6764926B2 (https=)
EP (1) EP1348778B1 (https=)
JP (1) JP2003332251A (https=)
DE (1) DE60209610T2 (https=)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4038046B2 (ja) * 2001-12-18 2008-01-23 シャープ株式会社 半導体レーザ装置の製造方法
US6756325B2 (en) * 2002-05-07 2004-06-29 Agilent Technologies, Inc. Method for producing a long wavelength indium gallium arsenide nitride(InGaAsN) active region
JP2005064364A (ja) 2003-08-19 2005-03-10 Sony Corp 長波長半導体発光素子およびその製造方法
US7372886B2 (en) * 2004-06-07 2008-05-13 Avago Technologies Fiber Ip Pte Ltd High thermal conductivity vertical cavity surface emitting laser (VCSEL)
US20090014061A1 (en) * 2007-07-10 2009-01-15 The Board Of Trustees Of The Leland Stanford Junior University GaInNAsSb solar cells grown by molecular beam epitaxy
JP2009184836A (ja) * 2008-02-01 2009-08-20 Sumitomo Electric Ind Ltd Ｉｉｉ−ｖ族化合物半導体の結晶成長方法、発光デバイスの製造方法および電子デバイスの製造方法
US20100319764A1 (en) * 2009-06-23 2010-12-23 Solar Junction Corp. Functional Integration Of Dilute Nitrides Into High Efficiency III-V Solar Cells
US20110114163A1 (en) * 2009-11-18 2011-05-19 Solar Junction Corporation Multijunction solar cells formed on n-doped substrates
US20110232730A1 (en) 2010-03-29 2011-09-29 Solar Junction Corp. Lattice matchable alloy for solar cells
US9214580B2 (en) 2010-10-28 2015-12-15 Solar Junction Corporation Multi-junction solar cell with dilute nitride sub-cell having graded doping
US8962991B2 (en) 2011-02-25 2015-02-24 Solar Junction Corporation Pseudomorphic window layer for multijunction solar cells
US8766087B2 (en) 2011-05-10 2014-07-01 Solar Junction Corporation Window structure for solar cell
CN103975449A (zh) * 2011-09-02 2014-08-06 安伯韦弗公司 太阳能电池
WO2013074530A2 (en) 2011-11-15 2013-05-23 Solar Junction Corporation High efficiency multijunction solar cells
WO2013093579A1 (en) * 2011-12-23 2013-06-27 Soitec Methods of forming dilute nitride materials for use in photoactive devices and related structures
WO2013093581A1 (en) * 2011-12-23 2013-06-27 Soitec Methods of fabricating dilute nitride semiconductor materials for use in photoactive devices and related structures
US8879275B2 (en) * 2012-02-21 2014-11-04 International Business Machines Corporation Anti-corrosion conformal coating comprising modified porous silica fillers for metal conductors electrically connecting an electronic component
US9153724B2 (en) 2012-04-09 2015-10-06 Solar Junction Corporation Reverse heterojunctions for solar cells
US9240317B2 (en) 2013-03-28 2016-01-19 Umm Al-Qura University High temperature GaN based super semiconductor and fabrication process
SG11201606353TA (en) 2014-02-05 2016-09-29 Solar Junction Corp Monolithic multijunction power converter
WO2015128254A1 (en) * 2014-02-25 2015-09-03 Koninklijke Philips N.V. Light emitting semiconductor devices with getter layer
US20170110613A1 (en) 2015-10-19 2017-04-20 Solar Junction Corporation High efficiency multijunction photovoltaic cells
WO2019010037A1 (en) 2017-07-06 2019-01-10 Solar Junction Corporation HYBRID MOCVD / MBE EPITAXIAL GROWTH OF MULTI-JUNCTION SOLAR CELLS ADAPTED TO THE HIGH-PERFORMANCE NETWORK
EP3669402A1 (en) 2017-09-27 2020-06-24 Array Photonics, Inc. Short wavelength infrared optoelectronic devices having a dilute nitride layer
JP7043802B2 (ja) * 2017-11-16 2022-03-30 住友電気工業株式会社 垂直共振型面発光レーザ、垂直共振型面発光レーザを作製する方法
JP7095498B2 (ja) * 2018-08-31 2022-07-05 住友電気工業株式会社 垂直共振型面発光レーザ、垂直共振型面発光レーザを作製する方法
US11211514B2 (en) 2019-03-11 2021-12-28 Array Photonics, Inc. Short wavelength infrared optoelectronic devices having graded or stepped dilute nitride active regions
EP4394555A4 (en) 2021-09-27 2024-11-13 JVCKenwood Corporation Sensation transmission system, sensation transmission method, and sensation transmission program
WO2025108931A1 (de) 2023-11-24 2025-05-30 Aixtron Se Verfahren und vorrichtung zum abscheiden einer iii-v-halbleiterschicht in einer mit einer iii-v-schutzschicht beschichteten oberfläche aufweisenden prozesskammer

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US50934A (en) * 1865-11-14 Improvement in devices for opening artesian wells
JP3854693B2 (ja) * 1996-09-30 2006-12-06 キヤノン株式会社 半導体レーザの製造方法
US5903586A (en) * 1997-07-30 1999-05-11 Motorola, Inc. Long wavelength vertical cavity surface emitting laser
US5978398A (en) * 1997-07-31 1999-11-02 Motorola, Inc. Long wavelength vertical cavity surface emitting laser
US5944913A (en) 1997-11-26 1999-08-31 Sandia Corporation High-efficiency solar cell and method for fabrication
JP2003520440A (ja) 2000-01-13 2003-07-02 インフィネオン テクノロジーズ アクチエンゲゼルシャフト 半導体レーザー構造
AU2002219895A1 (en) * 2000-11-27 2002-06-03 Kopin Corporation Bipolar transistor with lattice matched base layer

Also Published As

Publication number Publication date
US6764926B2 (en) 2004-07-20
JP2003332251A (ja) 2003-11-21
EP1348778B1 (en) 2006-03-08
US20030181024A1 (en) 2003-09-25
EP1348778A1 (en) 2003-10-01
DE60209610D1 (de) 2006-05-04

Similar Documents

Publication Publication Date Title
DE60209610T2 (de) Verfahren zur Herstellung eines InGaAsN Halbleiters mit hoher Qualität
DE69023956T2 (de) Verfahren zur Herstellung eines III-V-Verbindungshalbleiterbauelementes.
DE3779775T2 (de) Halbleiterlaser mit streifenfoermiger mesa-wellenleiterstruktur und dessen herstellungsverfahren.
DE69333829T2 (de) Lichtemittierende Vorrichtung auf Basis einer Galliumnitrid-Halbleiterverbindung
DE69738342T2 (de) Herstellungsverfahren einer Anordnung mit einem Verbindungshalbleiter-Kristall und Herstellungsverfahren einer Verbindungshalbleiterschichten-Struktur
DE69411364T2 (de) Halbleiterlaser
DE69532055T2 (de) Halbleitervorrichtungen sowie ihre Herstellung unter Verwendung der Kristallorientierungsabhängigheit der Datierungs
DE69622277T2 (de) Halbleitermaterial, verfahren zur herstellung des halbleitermaterials und eine halbleitervorrichtung
US6377598B1 (en) Semiconductor light-emitting device and method for producing the same
DE69834780T2 (de) Halbleiterlaservorrichtung , optisches Kommunikationssystem unter Verwendung desselben und Herstellungsverfahren
DE68920853T2 (de) Verfahren für das Wachstum von epitaxialen Schichten.
DE69218802T2 (de) Halbleiterlaser
DE69132860T2 (de) Halbleiterlaser und Verfahren zu seiner Herstellung
DE60014097T2 (de) Nitrid-halbleiterschichtenstruktur und deren anwendung in halbleiterlasern
DE68924841T2 (de) Optoelektronische Vorrichtung mit grossem Energiebandabstand und Herstellungsverfahren.
DE69525700T2 (de) Verfahren zur Herstellung einer lichtemittierenden Halbleitervorrichtung
DE69101123T2 (de) Halbleiterlaser zum Erzeugen sichtbaren Lichts.
DE69400533T2 (de) Halbleiterlaser und Herstellungsverfahren
US4766092A (en) Method of growing heteroepitaxial InP on Si using Sn substrate implantation
DE69524693T2 (de) Halbleiterlaserdiode
DE19635571A1 (de) Verfahren zur Herstellung einer kohlenstoffdotierten Verbindungshalbleiterschicht
DE69402865T2 (de) Elektrische sperrstruktur fuer halbleitervorrichtung
JPH0745909A (ja) 歪量子井戸半導体レーザの気相成長方法
JP3665911B2 (ja) 半導体光素子の製造方法，及び半導体光素子
WO2020182444A1 (de) Aufwachsstruktur für ein strahlung emittierendes halbleiterbauelement und strahlung emittierendes halbleiterbauelement

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Representative=s name: SCHOPPE, ZIMMERMANN, STOECKELER & ZINKLER, 82049 PU

8327 Change in the person/name/address of the patent owner

Owner name: AGILENT TECHNOLOGIES, INC. (N.D.GES.D. STAATES, US

8339 Ceased/non-payment of the annual fee