JP2003317471A5 - - Google Patents

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Publication number
JP2003317471A5
JP2003317471A5 JP2002113788A JP2002113788A JP2003317471A5 JP 2003317471 A5 JP2003317471 A5 JP 2003317471A5 JP 2002113788 A JP2002113788 A JP 2002113788A JP 2002113788 A JP2002113788 A JP 2002113788A JP 2003317471 A5 JP2003317471 A5 JP 2003317471A5
Authority
JP
Japan
Prior art keywords
circuit
refresh
signal
state
memory device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002113788A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003317471A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2002113788A priority Critical patent/JP2003317471A/ja
Priority claimed from JP2002113788A external-priority patent/JP2003317471A/ja
Priority to US10/270,137 priority patent/US7111112B2/en
Priority to KR10-2002-0080183A priority patent/KR100512546B1/ko
Publication of JP2003317471A publication Critical patent/JP2003317471A/ja
Publication of JP2003317471A5 publication Critical patent/JP2003317471A5/ja
Pending legal-status Critical Current

Links

JP2002113788A 2002-04-16 2002-04-16 半導体記憶装置 Pending JP2003317471A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2002113788A JP2003317471A (ja) 2002-04-16 2002-04-16 半導体記憶装置
US10/270,137 US7111112B2 (en) 2002-04-16 2002-10-15 Semiconductor memory device having control circuit
KR10-2002-0080183A KR100512546B1 (ko) 2002-04-16 2002-12-16 제어 회로를 갖는 반도체 기억 장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002113788A JP2003317471A (ja) 2002-04-16 2002-04-16 半導体記憶装置

Publications (2)

Publication Number Publication Date
JP2003317471A JP2003317471A (ja) 2003-11-07
JP2003317471A5 true JP2003317471A5 (enExample) 2005-09-22

Family

ID=28786709

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002113788A Pending JP2003317471A (ja) 2002-04-16 2002-04-16 半導体記憶装置

Country Status (3)

Country Link
US (1) US7111112B2 (enExample)
JP (1) JP2003317471A (enExample)
KR (1) KR100512546B1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4667888B2 (ja) * 2005-02-01 2011-04-13 パナソニック株式会社 半導体記憶装置
KR102034626B1 (ko) * 2013-06-26 2019-10-21 삼성전자 주식회사 메모리 동작을 제어하는 방법 및 장치
KR20200051318A (ko) 2018-11-05 2020-05-13 (주) 스마트웨어 경량 인스턴트 영상 데이터 기반의 일대일 학습 코칭 방법, 그리고 그 시스템

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100223339B1 (ko) 1996-12-31 1999-10-15 김영환 반도체 장치에서 리프레쉬 동작중 모드전환 방지방법
JP2001118383A (ja) * 1999-10-20 2001-04-27 Fujitsu Ltd リフレッシュを自動で行うダイナミックメモリ回路
KR100390906B1 (ko) * 2001-05-25 2003-07-12 주식회사 하이닉스반도체 가상형 스태틱 랜덤 억세스 메모리장치 및 그의 구동방법
JP4743999B2 (ja) * 2001-05-28 2011-08-10 ルネサスエレクトロニクス株式会社 半導体記憶装置
US6625077B2 (en) * 2001-10-11 2003-09-23 Cascade Semiconductor Corporation Asynchronous hidden refresh of semiconductor memory
US6735139B2 (en) * 2001-12-14 2004-05-11 Silicon Storage Technology, Inc. System and method for providing asynchronous SRAM functionality with a DRAM array

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