KR100512546B1 - 제어 회로를 갖는 반도체 기억 장치 - Google Patents

제어 회로를 갖는 반도체 기억 장치 Download PDF

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Publication number
KR100512546B1
KR100512546B1 KR10-2002-0080183A KR20020080183A KR100512546B1 KR 100512546 B1 KR100512546 B1 KR 100512546B1 KR 20020080183 A KR20020080183 A KR 20020080183A KR 100512546 B1 KR100512546 B1 KR 100512546B1
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KR
South Korea
Prior art keywords
signal
circuit
level
time
write
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR10-2002-0080183A
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English (en)
Korean (ko)
Other versions
KR20030082887A (ko
Inventor
츠쿠데마사키
Original Assignee
미쓰비시덴키 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 미쓰비시덴키 가부시키가이샤 filed Critical 미쓰비시덴키 가부시키가이샤
Publication of KR20030082887A publication Critical patent/KR20030082887A/ko
Application granted granted Critical
Publication of KR100512546B1 publication Critical patent/KR100512546B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
KR10-2002-0080183A 2002-04-16 2002-12-16 제어 회로를 갖는 반도체 기억 장치 Expired - Fee Related KR100512546B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002113788A JP2003317471A (ja) 2002-04-16 2002-04-16 半導体記憶装置
JPJP-P-2002-00113788 2002-04-16

Publications (2)

Publication Number Publication Date
KR20030082887A KR20030082887A (ko) 2003-10-23
KR100512546B1 true KR100512546B1 (ko) 2005-09-07

Family

ID=28786709

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2002-0080183A Expired - Fee Related KR100512546B1 (ko) 2002-04-16 2002-12-16 제어 회로를 갖는 반도체 기억 장치

Country Status (3)

Country Link
US (1) US7111112B2 (enExample)
JP (1) JP2003317471A (enExample)
KR (1) KR100512546B1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4667888B2 (ja) * 2005-02-01 2011-04-13 パナソニック株式会社 半導体記憶装置
KR102034626B1 (ko) * 2013-06-26 2019-10-21 삼성전자 주식회사 메모리 동작을 제어하는 방법 및 장치
KR20200051318A (ko) 2018-11-05 2020-05-13 (주) 스마트웨어 경량 인스턴트 영상 데이터 기반의 일대일 학습 코칭 방법, 그리고 그 시스템

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100223339B1 (ko) 1996-12-31 1999-10-15 김영환 반도체 장치에서 리프레쉬 동작중 모드전환 방지방법
JP2001118383A (ja) * 1999-10-20 2001-04-27 Fujitsu Ltd リフレッシュを自動で行うダイナミックメモリ回路
KR100390906B1 (ko) * 2001-05-25 2003-07-12 주식회사 하이닉스반도체 가상형 스태틱 랜덤 억세스 메모리장치 및 그의 구동방법
JP4743999B2 (ja) * 2001-05-28 2011-08-10 ルネサスエレクトロニクス株式会社 半導体記憶装置
WO2003032170A1 (en) * 2001-10-11 2003-04-17 Cascade Semiconductor Corporation Asynchronous hidden refresh of semiconductor memory
US6735139B2 (en) * 2001-12-14 2004-05-11 Silicon Storage Technology, Inc. System and method for providing asynchronous SRAM functionality with a DRAM array

Also Published As

Publication number Publication date
KR20030082887A (ko) 2003-10-23
US7111112B2 (en) 2006-09-19
JP2003317471A (ja) 2003-11-07
US20030196057A1 (en) 2003-10-16

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