JP2003317471A - 半導体記憶装置 - Google Patents

半導体記憶装置

Info

Publication number
JP2003317471A
JP2003317471A JP2002113788A JP2002113788A JP2003317471A JP 2003317471 A JP2003317471 A JP 2003317471A JP 2002113788 A JP2002113788 A JP 2002113788A JP 2002113788 A JP2002113788 A JP 2002113788A JP 2003317471 A JP2003317471 A JP 2003317471A
Authority
JP
Japan
Prior art keywords
signal
level
time
memory device
semiconductor memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002113788A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003317471A5 (enExample
Inventor
Masaki Tsukide
正樹 築出
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2002113788A priority Critical patent/JP2003317471A/ja
Priority to US10/270,137 priority patent/US7111112B2/en
Priority to KR10-2002-0080183A priority patent/KR100512546B1/ko
Publication of JP2003317471A publication Critical patent/JP2003317471A/ja
Publication of JP2003317471A5 publication Critical patent/JP2003317471A5/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
JP2002113788A 2002-04-16 2002-04-16 半導体記憶装置 Pending JP2003317471A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2002113788A JP2003317471A (ja) 2002-04-16 2002-04-16 半導体記憶装置
US10/270,137 US7111112B2 (en) 2002-04-16 2002-10-15 Semiconductor memory device having control circuit
KR10-2002-0080183A KR100512546B1 (ko) 2002-04-16 2002-12-16 제어 회로를 갖는 반도체 기억 장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002113788A JP2003317471A (ja) 2002-04-16 2002-04-16 半導体記憶装置

Publications (2)

Publication Number Publication Date
JP2003317471A true JP2003317471A (ja) 2003-11-07
JP2003317471A5 JP2003317471A5 (enExample) 2005-09-22

Family

ID=28786709

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002113788A Pending JP2003317471A (ja) 2002-04-16 2002-04-16 半導体記憶装置

Country Status (3)

Country Link
US (1) US7111112B2 (enExample)
JP (1) JP2003317471A (enExample)
KR (1) KR100512546B1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006216099A (ja) * 2005-02-01 2006-08-17 Matsushita Electric Ind Co Ltd 半導体記憶装置

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102034626B1 (ko) * 2013-06-26 2019-10-21 삼성전자 주식회사 메모리 동작을 제어하는 방법 및 장치
KR20200051318A (ko) 2018-11-05 2020-05-13 (주) 스마트웨어 경량 인스턴트 영상 데이터 기반의 일대일 학습 코칭 방법, 그리고 그 시스템

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100223339B1 (ko) 1996-12-31 1999-10-15 김영환 반도체 장치에서 리프레쉬 동작중 모드전환 방지방법
JP2001118383A (ja) * 1999-10-20 2001-04-27 Fujitsu Ltd リフレッシュを自動で行うダイナミックメモリ回路
KR100390906B1 (ko) * 2001-05-25 2003-07-12 주식회사 하이닉스반도체 가상형 스태틱 랜덤 억세스 메모리장치 및 그의 구동방법
JP4743999B2 (ja) * 2001-05-28 2011-08-10 ルネサスエレクトロニクス株式会社 半導体記憶装置
US6625077B2 (en) * 2001-10-11 2003-09-23 Cascade Semiconductor Corporation Asynchronous hidden refresh of semiconductor memory
US6735139B2 (en) * 2001-12-14 2004-05-11 Silicon Storage Technology, Inc. System and method for providing asynchronous SRAM functionality with a DRAM array

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006216099A (ja) * 2005-02-01 2006-08-17 Matsushita Electric Ind Co Ltd 半導体記憶装置

Also Published As

Publication number Publication date
US20030196057A1 (en) 2003-10-16
KR20030082887A (ko) 2003-10-23
KR100512546B1 (ko) 2005-09-07
US7111112B2 (en) 2006-09-19

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