JP2006216099A5 - - Google Patents

Download PDF

Info

Publication number
JP2006216099A5
JP2006216099A5 JP2005025222A JP2005025222A JP2006216099A5 JP 2006216099 A5 JP2006216099 A5 JP 2006216099A5 JP 2005025222 A JP2005025222 A JP 2005025222A JP 2005025222 A JP2005025222 A JP 2005025222A JP 2006216099 A5 JP2006216099 A5 JP 2006216099A5
Authority
JP
Japan
Prior art keywords
signal
memory device
semiconductor memory
timer
memory unit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2005025222A
Other languages
English (en)
Japanese (ja)
Other versions
JP4667888B2 (ja
JP2006216099A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2005025222A priority Critical patent/JP4667888B2/ja
Priority claimed from JP2005025222A external-priority patent/JP4667888B2/ja
Priority to US11/344,199 priority patent/US7280406B2/en
Priority to CNB2006100037143A priority patent/CN100501867C/zh
Publication of JP2006216099A publication Critical patent/JP2006216099A/ja
Publication of JP2006216099A5 publication Critical patent/JP2006216099A5/ja
Priority to US12/155,392 priority patent/USRE41879E1/en
Application granted granted Critical
Publication of JP4667888B2 publication Critical patent/JP4667888B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP2005025222A 2005-02-01 2005-02-01 半導体記憶装置 Expired - Fee Related JP4667888B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2005025222A JP4667888B2 (ja) 2005-02-01 2005-02-01 半導体記憶装置
US11/344,199 US7280406B2 (en) 2005-02-01 2006-02-01 Semiconductor memory device
CNB2006100037143A CN100501867C (zh) 2005-02-01 2006-02-05 半导体存储器件
US12/155,392 USRE41879E1 (en) 2005-02-01 2008-06-03 Semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005025222A JP4667888B2 (ja) 2005-02-01 2005-02-01 半導体記憶装置

Publications (3)

Publication Number Publication Date
JP2006216099A JP2006216099A (ja) 2006-08-17
JP2006216099A5 true JP2006216099A5 (enExample) 2007-11-22
JP4667888B2 JP4667888B2 (ja) 2011-04-13

Family

ID=36756391

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005025222A Expired - Fee Related JP4667888B2 (ja) 2005-02-01 2005-02-01 半導体記憶装置

Country Status (3)

Country Link
US (2) US7280406B2 (enExample)
JP (1) JP4667888B2 (enExample)
CN (1) CN100501867C (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100516693B1 (ko) * 2003-04-02 2005-09-22 주식회사 하이닉스반도체 불휘발성 프로그래머블 로직 회로
KR100784865B1 (ko) 2006-12-12 2007-12-14 삼성전자주식회사 낸드 플래시 메모리 장치 및 그것을 포함한 메모리 시스템
JP2010097633A (ja) * 2008-10-14 2010-04-30 Toshiba Corp 半導体記憶装置
US9403417B2 (en) * 2009-03-12 2016-08-02 GM Global Technology Operations LLC Methods and systems for preconditioning vehicles
KR101124321B1 (ko) * 2010-04-06 2012-03-28 주식회사 하이닉스반도체 반도체 메모리 장치 및 그 리드/라이트 제어 방법
US9613676B1 (en) * 2016-06-29 2017-04-04 Micron Technology, Inc. Writing to cross-point non-volatile memory
US11516042B2 (en) * 2018-07-19 2022-11-29 Panasonic Intellectual Property Management Co., Ltd. In-vehicle detection system and control method thereof

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6079593A (ja) * 1983-10-07 1985-05-07 Hitachi Ltd 半導体集積回路システム
JPS60136089A (ja) * 1983-12-26 1985-07-19 Hitachi Ltd Ｍｏｓ記憶装置
JPS60193197A (ja) * 1984-03-14 1985-10-01 Nec Corp 読み出し専用メモリ
JPS6142797A (ja) * 1984-08-06 1986-03-01 Nec Corp ダイナミツク型半導体記憶装置
JPH07105137B2 (ja) * 1987-11-17 1995-11-13 日本電気株式会社 半導体メモリ
JP2908485B2 (ja) * 1989-11-09 1999-06-21 富士通株式会社 半導体記憶装置
KR100329944B1 (ko) * 1994-12-23 2002-03-22 로데릭 더블류 루이스 다중 데이터 경로를 갖는 메인 메모리 시스템
US5532953A (en) * 1995-03-29 1996-07-02 Ramtron International Corporation Ferroelectric memory sensing method using distinct read and write voltages
US5818771A (en) * 1996-09-30 1998-10-06 Hitachi, Ltd. Semiconductor memory device
JP3930074B2 (ja) 1996-09-30 2007-06-13 株式会社ルネサステクノロジ 半導体集積回路及びデータ処理システム
KR100255956B1 (ko) * 1997-07-16 2000-05-01 윤종용 강유전체 메모리 장치 및 그것의 데이터 보호 방법
KR100351935B1 (ko) * 2000-05-10 2002-09-12 삼성전자 주식회사 강유전체 랜덤 액세스 메모리 장치 및 그것의 읽기/쓰기동작을 제어하는 방법
JP3959341B2 (ja) * 2002-02-18 2007-08-15 株式会社東芝 半導体集積回路装置
JP2003317471A (ja) * 2002-04-16 2003-11-07 Mitsubishi Electric Corp 半導体記憶装置
JP4067908B2 (ja) * 2002-08-08 2008-03-26 スパンション エルエルシー 半導体記憶装置の制御方法、および該半導体記憶装置
KR100502411B1 (ko) * 2002-10-17 2005-07-19 삼성전자주식회사 강유전체 메모리 장치 및 그것의 제어 방법
JP3747920B2 (ja) * 2003-05-15 2006-02-22 セイコーエプソン株式会社 半導体メモリ装置および電子機器
JP4088227B2 (ja) * 2003-09-29 2008-05-21 株式会社東芝 半導体集積回路装置
JP4327626B2 (ja) * 2004-03-12 2009-09-09 株式会社東芝 不揮発性半導体記憶装置

Similar Documents

Publication Publication Date Title
CN105556416B (zh) 数据存储设备/系统中利用低功率状态的停电保护和恢复
TWI240275B (en) SRAM-compatible memory device having three sense amplifiers between two memory blocks
JP4908560B2 (ja) 強誘電体メモリ及びメモリシステム
NO20003507D0 (no) FremgangsmÕte til dynamisk lesing/skriving i et ferroelektrisk minne samt kretsløsninger for utførelse av fremgangsmÕten
JP2008287873A (ja) ダイナミックランダムアクセスメモリ用の低電力リフレッシュ回路および方法
CN107667403A (zh) 长突发长度的内部连续行存取
TW201203242A (en) Write energy conservation in memory
CN101075479B (zh) 具有低电流消耗特性的半导体存储装置
JPH01125795A (ja) 仮想型スタティック半導体記憶装置及びこの記憶装置を用いたシステム
WO2002049037A1 (en) Semiconductor memory device and refresh control circuit
US7768857B2 (en) Method of refreshing data in a storage location based on heat dissipation level and system thereof
JP2006216099A5 (enExample)
JP4088227B2 (ja) 半導体集積回路装置
CN1989569B (zh) 能够在半密度和全密度模式之间切换的dram及其操作方法
US9147464B1 (en) System architecture with multiple memory types, including programmable impedance memory elements
JP4667888B2 (ja) 半導体記憶装置
CN112447214A (zh) 加电时具有自动后台预处理的存储器
JP4701807B2 (ja) メモリコントローラ、不揮発性記憶装置及び不揮発性記憶システム
JP2004078772A (ja) マイクロコンピュータ装置の待機時の処理方法およびマイクロコンピュータ装置
JP2005309839A5 (enExample)
CN100538884C (zh) 半导体存储装置
JP2008287887A (ja) 半導体記憶装置
US7791949B2 (en) Refresh method for a non-volatile memory
JPH10255468A (ja) Ｄｒａｍのリフレッシュ装置
JP2003317471A5 (enExample)