CN100501867C - 半导体存储器件 - Google Patents

半导体存储器件 Download PDF

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Publication number
CN100501867C
CN100501867C CNB2006100037143A CN200610003714A CN100501867C CN 100501867 C CN100501867 C CN 100501867C CN B2006100037143 A CNB2006100037143 A CN B2006100037143A CN 200610003714 A CN200610003714 A CN 200610003714A CN 100501867 C CN100501867 C CN 100501867C
Authority
CN
China
Prior art keywords
signal
storage unit
unit according
semiconductor storage
enable signal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB2006100037143A
Other languages
English (en)
Chinese (zh)
Other versions
CN1822228A (zh
Inventor
岩成俊一
坂上雅彦
平野博茂
中熊哲治
三木隆
五宝靖
山冈邦吏
村久木康夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of CN1822228A publication Critical patent/CN1822228A/zh
Application granted granted Critical
Publication of CN100501867C publication Critical patent/CN100501867C/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4076—Timing circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
    • G11C7/1063—Control signal output circuits, e.g. status or busy flags, feedback command signals
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
    • G11C2207/22—Control and timing of internal memory operations
    • G11C2207/229—Timing of a write operation

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
CNB2006100037143A 2005-02-01 2006-02-05 半导体存储器件 Expired - Fee Related CN100501867C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP025222/2005 2005-02-01
JP2005025222A JP4667888B2 (ja) 2005-02-01 2005-02-01 半導体記憶装置

Publications (2)

Publication Number Publication Date
CN1822228A CN1822228A (zh) 2006-08-23
CN100501867C true CN100501867C (zh) 2009-06-17

Family

ID=36756391

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2006100037143A Expired - Fee Related CN100501867C (zh) 2005-02-01 2006-02-05 半导体存储器件

Country Status (3)

Country Link
US (2) US7280406B2 (enExample)
JP (1) JP4667888B2 (enExample)
CN (1) CN100501867C (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100516693B1 (ko) * 2003-04-02 2005-09-22 주식회사 하이닉스반도체 불휘발성 프로그래머블 로직 회로
KR100784865B1 (ko) * 2006-12-12 2007-12-14 삼성전자주식회사 낸드 플래시 메모리 장치 및 그것을 포함한 메모리 시스템
JP2010097633A (ja) * 2008-10-14 2010-04-30 Toshiba Corp 半導体記憶装置
US9403417B2 (en) * 2009-03-12 2016-08-02 GM Global Technology Operations LLC Methods and systems for preconditioning vehicles
KR101124321B1 (ko) * 2010-04-06 2012-03-28 주식회사 하이닉스반도체 반도체 메모리 장치 및 그 리드/라이트 제어 방법
US9613676B1 (en) * 2016-06-29 2017-04-04 Micron Technology, Inc. Writing to cross-point non-volatile memory
US11516042B2 (en) * 2018-07-19 2022-11-29 Panasonic Intellectual Property Management Co., Ltd. In-vehicle detection system and control method thereof

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6079593A (ja) * 1983-10-07 1985-05-07 Hitachi Ltd 半導体集積回路システム
JPS60136089A (ja) * 1983-12-26 1985-07-19 Hitachi Ltd Ｍｏｓ記憶装置
JPS60193197A (ja) * 1984-03-14 1985-10-01 Nec Corp 読み出し専用メモリ
JPS6142797A (ja) * 1984-08-06 1986-03-01 Nec Corp ダイナミツク型半導体記憶装置
JPH07105137B2 (ja) * 1987-11-17 1995-11-13 日本電気株式会社 半導体メモリ
JP2908485B2 (ja) * 1989-11-09 1999-06-21 富士通株式会社 半導体記憶装置
JP3738314B2 (ja) * 1994-12-23 2006-01-25 マイクロン・テクノロジー・インコーポレーテッド 複数のデータ経路を有するメイン・メモリ・システム
US5532953A (en) * 1995-03-29 1996-07-02 Ramtron International Corporation Ferroelectric memory sensing method using distinct read and write voltages
JP3930074B2 (ja) 1996-09-30 2007-06-13 株式会社ルネサステクノロジ 半導体集積回路及びデータ処理システム
US5818771A (en) 1996-09-30 1998-10-06 Hitachi, Ltd. Semiconductor memory device
KR100255956B1 (ko) * 1997-07-16 2000-05-01 윤종용 강유전체 메모리 장치 및 그것의 데이터 보호 방법
KR100351935B1 (ko) * 2000-05-10 2002-09-12 삼성전자 주식회사 강유전체 랜덤 액세스 메모리 장치 및 그것의 읽기/쓰기동작을 제어하는 방법
JP3959341B2 (ja) 2002-02-18 2007-08-15 株式会社東芝 半導体集積回路装置
JP2003317471A (ja) * 2002-04-16 2003-11-07 Mitsubishi Electric Corp 半導体記憶装置
JP4067908B2 (ja) * 2002-08-08 2008-03-26 スパンション エルエルシー 半導体記憶装置の制御方法、および該半導体記憶装置
KR100502411B1 (ko) * 2002-10-17 2005-07-19 삼성전자주식회사 강유전체 메모리 장치 및 그것의 제어 방법
JP3747920B2 (ja) * 2003-05-15 2006-02-22 セイコーエプソン株式会社 半導体メモリ装置および電子機器
JP4088227B2 (ja) 2003-09-29 2008-05-21 株式会社東芝 半導体集積回路装置
JP4327626B2 (ja) * 2004-03-12 2009-09-09 株式会社東芝 不揮発性半導体記憶装置

Also Published As

Publication number Publication date
US7280406B2 (en) 2007-10-09
JP4667888B2 (ja) 2011-04-13
US20060171246A1 (en) 2006-08-03
CN1822228A (zh) 2006-08-23
USRE41879E1 (en) 2010-10-26
JP2006216099A (ja) 2006-08-17

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C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
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GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20090617

Termination date: 20190205