JP2003273151A - 酸化が防止される銅ワイヤを有する半導体パッケージ - Google Patents

酸化が防止される銅ワイヤを有する半導体パッケージ

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Publication number
JP2003273151A
JP2003273151A JP2003060466A JP2003060466A JP2003273151A JP 2003273151 A JP2003273151 A JP 2003273151A JP 2003060466 A JP2003060466 A JP 2003060466A JP 2003060466 A JP2003060466 A JP 2003060466A JP 2003273151 A JP2003273151 A JP 2003273151A
Authority
JP
Japan
Prior art keywords
wire
semiconductor package
semiconductor chip
copper wire
copper
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2003060466A
Other languages
English (en)
Inventor
Sang-Do Lee
相道 李
Yong-Suk Kwon
容錫 権
Jong-Jin Shin
宗振 辛
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fairchild Korea Semiconductor Ltd
Original Assignee
Fairchild Korea Semiconductor Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fairchild Korea Semiconductor Ltd filed Critical Fairchild Korea Semiconductor Ltd
Publication of JP2003273151A publication Critical patent/JP2003273151A/ja
Pending legal-status Critical Current

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Abstract

(57)【要約】 【課題】 酸化が防止される銅ワイヤを有する半導体パ
ッケージを提供する。 【解決手段】 半導体チップパッドと端子とがワイヤで
連結される半導体パッケージにおいて、前記ワイヤは酸
化防止膜がコーティングされた銅ワイヤである。これに
より、金ワイヤに比べて、銅ワイヤは同じ長所を維持し
ながら優秀な電気的特性及び信頼度を提供できる。

Description

【発明の詳細な説明】
【０００１】
【発明の属する技術分野】本発明は半導体パッケージに
係り、特に酸化が防止される銅ワイヤを有する半導体パ
ッケージに関する。
【０００２】
【従来の技術】一般的な半導体パッケージにおいて、リ
ードフレームのダイパッドに付着される半導体チップの
チップパッドと外部端子、例えば、リードフレームの内
部リードはワイヤを通じて電気的に互いに連結される。
前記ワイヤには金ワイヤを主に使用する。しかし、金ワ
イヤは、公知のように高価であり、特に高温での信頼性
が顕著に落ちる特性がある。また金ワイヤは軟質である
ために外部の力により容易に形態が変形するという短所
がある。
【０００３】したがって、高速、低電力消耗及び低コス
トの半導体パッケージを要求する最近の傾向に応じて金
ワイヤよりもっと優れた特性を有する銅ワイヤに関する
研究が活発に進んでいる。銅ワイヤは、金ワイヤより低
い電気的抵抗を有するので半導体パッケージの動作速度
などの電気的な特性を向上させることができ、価格もさ
らにやすい。そして銅ワイヤは金ワイヤよりさらに高い
熱伝導率を有するので熱放出をより容易に行える利点を
提供する。
【０００４】しかし、前述した多くの長所を有している
一方、銅ワイヤはワイヤボンディング工程のように外部
環境に露出される場合、表面が酸化されて信頼性及び電
気的な特性が劣化する問題がある。すなわち、銅ワイヤ
の表面が酸化される場合、抵抗値が増加して電気的な特
性が悪くなり、接合強度が弱くなって信頼性が劣化す
る。特に、ワイヤボンディング工程中に毛細管端部での
ボール形成部分が酸化されれば毛細管端部での放電が発
生しないことがあり、これによりボールが円形に形成さ
れない恐れがある。また円形のボールが形成されてもワ
イヤボンディング工程後に付着力が大きく減少する。
【０００５】
【発明が解決しようとする課題】本発明が解決しようと
する技術的課題は、優秀な特性を維持しながら酸化を抑
制して信頼性及び電気的特性が劣化しないように酸化が
防止される銅ワイヤを有する半導体パッケージを提供す
ることである。
【０００６】
【課題を解決するための手段】前記技術的課題を達成す
るために、本発明による酸化が防止される銅ワイヤを有
する半導体パッケージは、半導体チップパッドと端子と
がワイヤで連結される半導体パッケージにおいて、前記
ワイヤは酸化防止膜がコーティングされた銅ワイヤであ
ることを特徴とする。
【０００７】前記酸化防止膜は金属材質よりなることが
望ましい。この場合、前記金属材質はパラジウムまたは
白金であることが望ましい。
【０００８】前記酸化防止膜は０．０１〜０．５μｍの
厚さを有することが望ましい。
【０００９】本発明において、前記半導体チップパッド
を有する半導体チップと、前記半導体チップが付着され
るリードフレームパッド、前記半導体チップ、リードフ
レームパッドの一部及び前記リードの一部を完全に包む
モールディング材をさらに具備することが望ましい。
【００１０】
【発明の実施の形態】以下、添付した図面を参照して本
発明の望ましい実施例を説明する。しかし、本発明の実
施例は色々な形態に変形でき、本発明の範囲が後述する
実施例によって限定されると解釈されてはならない。
【００１１】図１は、本発明による酸化が防止される銅
ワイヤを有する半導体パッケージを示した断面図であ
る。そして図２は、図１の半導体パッケージの銅ワイヤ
を部分切断して示した斜視図である。
【００１２】まず図１を参照すれば、半導体チップ１２
０がエポキシ樹脂１３０のような接着手段によりリード
フレームパッド１１０上に付着される。半導体チップ１
２０の表面上にはアルミニウム電極パッド１２２が提供
される。アルミニウム電極パッド１２２がない半導体チ
ップ１２０の表面上には保護膜１２４が形成される。ア
ルミニウム電極パッド１２２とリードフレームのインナ
リード１４０とは酸化が防止される銅ワイヤ１５０によ
り電気的に連結される。図示しなかったが、前記リード
フレームパッド１１０の上部、半導体チップ１２０、リ
ードフレームのインナリード１４０及び酸化が防止され
る銅ワイヤ１５０はエポキシモールディング化合物（Ｅ
ＭＣ；Ｅｐｏｘｙ Ｍｏｌｄｉｎｇ Ｃｏｍｐｏｕｎｄ）
により包まれる。
【００１３】次に図２を参照すれば、前記酸化が防止さ
れる銅ワイヤ１５０は、内部に銅ワイヤ１５２が存在し
て銅ワイヤ１５２の周囲を酸化防止膜１５４が包む構造
よりなる。前記内部の銅ワイヤ１５２は純粋銅を含む
か、あるいは実質的に純粋銅でありうる。また、前記内
部の銅ワイヤ１５２として、銅と銀（Ag）及び／または
金（Au）が混合された銅合金ワイヤを使うこともでき
る。酸化防止膜１５４はパラジウムまたは白金などの金
属材質よりなる。酸化防止膜１５４の厚さｄ１は約０．
０１〜０．５μｍである。金ワイヤの場合、軟質特性の
ために薄い状態では形態を維持し難いので０．９ｍｍ以
下の直径で使用するのは困難であったが、本発明による
酸化防止膜がコーティングされた銅ワイヤ１５０内部の
銅ワイヤ１５２の場合、約０．４〜０．９ｍｍの直径で
使用できる。例えば、ボンディング状態で外力により形
態が変更される、剛性の尺度になるヤング率（Ｙｏｕｎ
ｇ’ｓｍｏｄｕｌｕｓ）も金ワイヤは８．８×１０１０
Ｎ／ｍ２であるに比べて銅ワイヤは１３．６×１０１０
Ｎ／ｍ２でより大きい。またコスト面でも銅ワイヤ１５
２は金ワイヤの４０〜５０％であり、酸化防止膜がコー
ティングされた銅ワイヤ１５０も金ワイヤの約５０〜６
０％である。
【００１４】図３Ａ及び図３Ｂは、各々金ワイヤと銅ワ
イヤとが半導体チップの金属電極パッドにボンディング
された形状を示した断面図である。
【００１５】まず図３Ａを参照すれば、シリコンよりな
る半導体チップ３１０上のアルミニウム電極パッド３２
０に金ワイヤ３３０をボンディングさせれば、アルミニ
ウムと金との金属間成長現象が発生してアルミニウム電
極パッド３２０のアルミニウムが金ワイヤ３３０の内部
に成長する。したがって、アルミニウム電極パッド３２
０の一部（図面で“Ａ”で表した部分）が金ワイヤ３３
０の内部に陥没して、アルミニウム電極パッド３２０と
金ワイヤ３３０との接触面積が増加する。このように接
触面積が増加すれば、アルミニウム電極パッド３２０と
金ワイヤ３３０との接触抵抗が増加してパッケージの電
気的な特性が劣化する。特にアルミニウム電極パッド３
２０が陥没する厚さｄ２は温度が高いほど増加し、その
増加率も温度が一定温度以上の場合には急激に増加す
る。
【００１６】次に図３Ｂを参照すれば、シリコンよりな
る半導体チップ３１０上のアルミニウム電極パッド３４
０に銅ワイヤ３５０をボンディングさせれば、銅とアル
ミニウムとの金属間成長現象が、金とアルミニウム間で
より少なく発生するので、アルミニウム電極パッド３４
０の上部が銅ワイヤ３５０の内部に陥没する現象がほと
んど発生しない。したがって、アルミニウム電極パッド
３４０と銅ワイヤ３５０と接触面積が非正常的に増加す
る現象がほとんど抑制される。
【００１７】図４は、銅ワイヤと金ワイヤとを使用した
場合に温度によってアルミニウム電極パッドの陥没した
厚さを比較するために示したグラフである。
【００１８】図４を参照すれば、まず金ワイヤを使用し
てワイヤボンディング工程を行う場合（参照符号“４１
０”で表示）、約１５０℃で既にアルミニウム電極パッ
ドが金ワイヤに陥没し、約２００℃以上になれば、アル
ミニウム電極パッドの陥没した厚さ（図３Ａのｄ２）は
急激に増加する。一方、銅ワイヤを使用してワイヤボン
ディング工程を行う場合（参照符号“４２０”で表
示）、約１５０℃ではアルミニウム電極パッドが銅ワイ
ヤに陥没する現象がほとんど発生しない。またアルミニ
ウム電極パッドの陥没した厚さが急激に増加し始める温
度も約４００℃で相対的に高い。
【００１９】図５は、銅ワイヤと金ワイヤとを使用した
場合に熱処理時間による抵抗値を比較するために示した
グラフである。
【００２０】図５を参照すれば、まず金ワイヤを使用し
てアルミニウム電極パッドにワイヤボンディング工程を
行った後、２００℃での熱処理工程を行う場合（参照符
号“５１１”で表示）に抵抗値が最も大きく現れるが、
これは金とアルミニウムとの金属間成長現象が最も活発
であるということを意味する。金ワイヤを使用して銅と
シリコンとを含有したアルミニウム電極パッドにワイヤ
ボンディング工程を行った後で熱処理工程を行った場合
（参照符号“５１２”で表示）、熱処理時間が一定時間
経過するまでは金ワイヤを使用してアルミニウム電極パ
ッドにワイヤボンディング工程を行う場合とほとんど同
一であるが、一定時間経過してからは抵抗値が減少す
る。しかし、銅ワイヤを使用してアルミニウム電極パッ
ドにワイヤボンディング工程を行った後で２００℃での
熱処理工程を行う場合（参照符号“５２１”で表示）に
抵抗値がさらに減少し、熱処理時間が一定時間以上経過
してからは抵抗値の変化がほとんど発生しない。そして
金ワイヤを使用して銅とシリコンとを含有したアルミニ
ウム電極パッドにワイヤボンディング工程を行った後で
熱処理工程を行った場合（参照符号“５２２”で表
示）、抵抗値が最も少ない。
【００２１】このように金ワイヤを使用する場合より銅
ワイヤを使用する場合に抵抗値が小さく現れる現象は大
きく２つの原因によるものである。第１に、金ワイヤを
使用する場合より銅ワイヤを使用する場合、銅とアルミ
ニウムまたは銅と銅及びシリコンを含有したアルミニウ
ムとの金属間成長現象が少なく発生するという点であ
り、第２に、銅の非抵抗は２０℃の温度での測定値が約
１．６７μΩｃｍであるのに対して金の比抵抗は２０℃
の温度での測定値が約２．４μΩｃｍである点である。
【００２２】図６は、図１の半導体パッケージを製造す
る過程中にワイヤボンディング工程を行う段階を説明す
るために示した図面である。
【００２３】図３を参照すれば、前記酸化防止膜（図２
の１５４）がコーティングされた銅ワイヤ１５０は、ワ
イヤ貯蔵容器内のカーバー３２０により限定される内部
空間でワイヤスプール３１０に巻かれている。ワイヤス
プール３１０は回転可能である。既存のワイヤ貯蔵容器
の構成では、カーバー３２０に、カーバー３２０を貫通
してカーバー３２０内部の銅ワイヤ１５０が存在する空
間に酸化抑制のための窒素ガスが供給されるように窒素
ガス注入口が配されねばならない。しかし、本発明で
は、既に銅ワイヤの周囲が酸化防止膜で包まれているの
で、窒素ガス注入口が要らない。またカーバー３２０の
一部は開放されて酸化防止膜がコーティングされた銅ワ
イヤ１５０が外部に供給されるようになっている。ワイ
ヤ貯蔵容器から供給される酸化防止膜がコーティングさ
れた銅ワイヤ１５０は、第１ローラ３３１及び第２ロー
ラ３３２を経て支持台３４０を通じて毛細管３５０に供
給される。毛細管３５０に供給された酸化防止膜がコー
ティングされた銅ワイヤ１５０において、毛細管３５０
の外で強い放電によってボール１５５が形成される。ボ
ール１５５が形成された酸化防止膜がコーティングされ
た銅ワイヤ１５０は、通常の方法によって半導体チップ
１２０上のアルミニウム電極パッド１２２の表面上にボ
ンディングされる。一方、毛細管３５０の端部で放電さ
れながら銅及び酸化防止膜材質が溶けながら一部が酸化
されるが、この酸化過程を抑制するために別のガスノズ
ル３６０が必要である。
【００２４】以上、本発明を望ましい実施例をあげて詳
細に説明したが、本発明は前記実施例に限定されず、本
発明の技術的思想内で当業者によって色々な変形が可能
である。
【００２５】
【発明の効果】以上の説明のように、本発明の半導体パ
ッケージによれば次のような利点が提供される。
【００２６】第１に、金ワイヤを使用する場合より、低
い電気的抵抗と剛性、低コスト、高い周囲温度での増加
した寿命、高い熱伝導性及び低い熱発生のような効果を
提供する。
【００２７】第２に、銅ワイヤが提供する長所を維持し
ながら、銅ワイヤだけを使用する場合より、酸化抑制に
よる電気的特性向上及び接着強度の増加による信頼度向
上などの効果を提供する。
【図面の簡単な説明】
【図１】 本発明による酸化が防止される銅ワイヤを有
する半導体パッケージを示した断面図である。
【図２】 図１の半導体パッケージの銅ワイヤを部分切
断して示した斜視図である。
【図３Ａ】 金ワイヤが半導体チップの金属電極パッド
にボンディングされた形状を示した断面図である。
【図３Ｂ】 銅ワイヤとが半導体チップの金属電極パッ
ドにボンディングされた形状を示した断面図である。
【図４】 銅ワイヤと金ワイヤとを使用した場合に温度
によってアルミニウム電極パッドの陥没された厚さを比
較するために示したグラフである。
【図５】 銅ワイヤと金ワイヤとを使用した場合に熱処
理時間による抵抗値を比較するために示したグラフであ
る。
【図６】 図１の半導体パッケージを製造する過程中に
ワイヤボンディング工程を行う段階を説明するために示
した図面である。
【符号の説明】
１５０、１５２ 銅ワイヤ １５４ 酸化防止膜
フロントページの続き (72)発明者 辛 宗振 大韓民国京畿道高陽市一山区注葉洞63番地 降仙マウルロッテアパート806棟505号 Ｆターム(参考） 5F044 FF01 FF06

Claims (12)

    【特許請求の範囲】
  1. 【請求項１】 半導体チップパッドと端子とがワイヤで
    連結される半導体パッケージにおいて、 前記ワイヤは酸化防止膜がコーティングされた銅ワイヤ
    であることを特徴とする半導体パッケージ。
  2. 【請求項２】 前記酸化防止膜は金属材質より成ること
    を特徴とする請求項１に記載の半導体パッケージ。
  3. 【請求項３】 前記金属材質はパラジウムまたは白金で
    あることを特徴とする請求項２に記載の半導体パッケー
    ジ。
  4. 【請求項４】 前記酸化防止膜は０．０１〜０．５μｍ
    の厚さを有することを特徴とする請求項１に記載の半導
    体パッケージ。
  5. 【請求項５】 前記半導体チップパッドを有する半導体
    チップと、 前記半導体チップが付着されるリードフレームパッド
    と、 前記半導体チップ、リードフレームパッドの一部及び前
    記リードの一部を完全に包むモールディング材とをさら
    に具備することを特徴とする請求項１に記載の半導体パ
    ッケージ。
  6. 【請求項６】 半導体チップパッドと、 端子と、 前記半導体チップパッド及び端子と連結され、表面に酸
    化防止膜がコーティングされた銅合金ワイヤを含むコー
    ティングされたワイヤを含むことを特徴とする半導体パ
    ッケージ。
  7. 【請求項７】 前記酸化防止膜は金属材質を含むことを
    特徴とする請求項６に記載の半導体パッケージ。
  8. 【請求項８】 前記金属材質は、パラジウム及び白金で
    構成されるグループから選択される金属材質であること
    を特徴とする請求項７に記載の半導体パッケージ。
  9. 【請求項９】 前記酸化防止膜は０．０１〜０．５μｍ
    の厚さを有することを特徴とする請求項６に記載の半導
    体パッケージ。
  10. 【請求項１０】 前記半導体チップパッドを有する半導
    体チップと、 前記半導体チップが取り付けられるリードフレームパッ
    ドと、 前記半導体チップ、リードフレームパッドの一部及び前
    記リードの一部を完全に包むモールディング材とをさら
    に具備することを特徴とする請求項６に記載の半導体パ
    ッケージ。
  11. 【請求項１１】 前記銅合金ワイヤは、銀及び金を含む
    グループから選択される少なくとも一つの物質が銅と混
    合された銅合金ワイヤであることを特徴とする請求項６
    に記載の半導体パッケージ。
  12. 【請求項１２】 前記半導体チップパッドはアルミニウ
    ムを含むことを特徴とする請求項６に記載の半導体パッ
    ケージ。
JP2003060466A 2002-03-14 2003-03-06 酸化が防止される銅ワイヤを有する半導体パッケージ Pending JP2003273151A (ja)

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MY163963A (en) 2017-11-15
KR20030074155A (ko) 2003-09-19
KR100926932B1 (ko) 2009-11-17
US20030173659A1 (en) 2003-09-18
TWI287282B (en) 2007-09-21
CN1445843A (zh) 2003-10-01
DE10261436A1 (de) 2003-10-02
CN100365806C (zh) 2008-01-30
TW200304209A (en) 2003-09-16

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