JP2003234311A - 内部構造にアクセスするためにウェハ・スタックをダイシングする方法 - Google Patents

内部構造にアクセスするためにウェハ・スタックをダイシングする方法

Info

Publication number
JP2003234311A
JP2003234311A JP2003025614A JP2003025614A JP2003234311A JP 2003234311 A JP2003234311 A JP 2003234311A JP 2003025614 A JP2003025614 A JP 2003025614A JP 2003025614 A JP2003025614 A JP 2003025614A JP 2003234311 A JP2003234311 A JP 2003234311A
Authority
JP
Japan
Prior art keywords
wafer
stack
dicing
die assembly
die
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2003025614A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003234311A5 (https=
Inventor
Peter G Hartwell
ピーター・ジー・ハートウェル
David Horsley
デイビッド・ホースレイ
Storrs T Hoen
ストーズ・ティー・ホーエン
Jonah A Harley
ジョナ・エイ・ハーレイ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HP Inc
Original Assignee
Hewlett Packard Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hewlett Packard Co filed Critical Hewlett Packard Co
Publication of JP2003234311A publication Critical patent/JP2003234311A/ja
Publication of JP2003234311A5 publication Critical patent/JP2003234311A5/ja
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00865—Multistep processes for the separation of wafers into individual elements
    • B81C1/00873—Multistep processes for the separation of wafers into individual elements characterised by special arrangements of the devices, allowing an easier separation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/20—Configurations of stacked chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/722—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between stacked chips

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Dicing (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
JP2003025614A 2002-02-01 2003-02-03 内部構造にアクセスするためにウェハ・スタックをダイシングする方法 Withdrawn JP2003234311A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/066,213 US6955976B2 (en) 2002-02-01 2002-02-01 Method for dicing wafer stacks to provide access to interior structures
US10/066213 2002-02-01

Publications (2)

Publication Number Publication Date
JP2003234311A true JP2003234311A (ja) 2003-08-22
JP2003234311A5 JP2003234311A5 (https=) 2006-03-23

Family

ID=22068009

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003025614A Withdrawn JP2003234311A (ja) 2002-02-01 2003-02-03 内部構造にアクセスするためにウェハ・スタックをダイシングする方法

Country Status (4)

Country Link
US (2) US6955976B2 (https=)
EP (1) EP1333485A3 (https=)
JP (1) JP2003234311A (https=)
TW (1) TWI261318B (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007536105A (ja) * 2004-06-30 2007-12-13 インテル・コーポレーション マイクロエレクトロメカニカルシステム（ｍｅｍｓ）と受動素子が集積化されたモジュール
JP2013021096A (ja) * 2011-07-11 2013-01-31 Disco Abrasive Syst Ltd 積層ウェーハの加工方法

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10232190A1 (de) * 2002-07-16 2004-02-05 Austriamicrosystems Ag Verfahren zur Herstellung eines Bauelements mit tiefliegenden Anschlußflächen
DE10322751B3 (de) * 2003-05-19 2004-09-30 X-Fab Semiconductor Foundries Ag Verfahren zur Herstellung eines in Kunststoff verschlossenen optoelektronischen Bauelementes
JP5296985B2 (ja) 2003-11-13 2013-09-25 アプライド マテリアルズ インコーポレイテッド 整形面をもつリテーニングリング
US7422962B2 (en) * 2004-10-27 2008-09-09 Hewlett-Packard Development Company, L.P. Method of singulating electronic devices
US7344956B2 (en) * 2004-12-08 2008-03-18 Miradia Inc. Method and device for wafer scale packaging of optical devices using a scribe and break process
US7282425B2 (en) * 2005-01-31 2007-10-16 International Business Machines Corporation Structure and method of integrating compound and elemental semiconductors for high-performance CMOS
DE102006033502A1 (de) 2006-05-03 2007-11-15 Osram Opto Semiconductors Gmbh Strahlungsemittierender Halbleiterkörper mit Trägersubstrat und Verfahren zur Herstellung eines solchen
US7808061B2 (en) * 2006-07-28 2010-10-05 Hewlett-Packard Development Company, L.P. Multi-die apparatus including moveable portions
US7892891B2 (en) * 2006-10-11 2011-02-22 SemiLEDs Optoelectronics Co., Ltd. Die separation
US8030754B2 (en) 2007-01-31 2011-10-04 Hewlett-Packard Development Company, L.P. Chip cooling channels formed in wafer bonding gap
US20080181558A1 (en) 2007-01-31 2008-07-31 Hartwell Peter G Electronic and optical circuit integration through wafer bonding
KR100826394B1 (ko) * 2007-05-17 2008-05-02 삼성전기주식회사 반도체 패키지 제조방법
US7662669B2 (en) * 2007-07-24 2010-02-16 Northrop Grumman Space & Mission Systems Corp. Method of exposing circuit lateral interconnect contacts by wafer saw
US7972940B2 (en) * 2007-12-28 2011-07-05 Micron Technology, Inc. Wafer processing
JPWO2010061470A1 (ja) * 2008-11-28 2012-04-19 セイコーインスツル株式会社 ウエハおよびパッケージ製品の製造方法
WO2010070753A1 (ja) * 2008-12-18 2010-06-24 セイコーインスツル株式会社 ウエハおよびパッケージ製品の製造方法
TWI513668B (zh) * 2009-02-23 2015-12-21 精工電子有限公司 玻璃密封型封裝的製造方法及玻璃基板
JP2012186532A (ja) 2011-03-03 2012-09-27 Seiko Instruments Inc ウエハ、パッケージの製造方法、及び圧電振動子
CN102744795A (zh) * 2011-04-21 2012-10-24 菱生精密工业股份有限公司 晶圆切割方法
TW201243930A (en) * 2011-04-21 2012-11-01 Lingsen Precision Ind Ltd Wafer dicing method
US8980676B2 (en) * 2012-06-25 2015-03-17 Raytheon Company Fabrication of window cavity cap structures in wafer level packaging
CN104340952A (zh) * 2013-08-09 2015-02-11 比亚迪股份有限公司 Mems圆片级真空封装方法及结构
TW202516601A (zh) 2018-09-06 2025-04-16 德克薩斯大學系統董事會 用於三維ics和可配置asics的奈米製造和設計技術
SE546936C2 (en) 2021-10-15 2025-03-11 Skechers Usa Inc Ii A shoe comprising a heel cup attached to an interior compressible layer

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0137988B1 (en) * 1983-08-31 1989-11-29 Texas Instruments Incorporated Infrared imager
JP3584635B2 (ja) * 1996-10-04 2004-11-04 株式会社デンソー 半導体装置及びその製造方法
US6436793B1 (en) * 2000-12-28 2002-08-20 Xerox Corporation Methods of forming semiconductor structure

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007536105A (ja) * 2004-06-30 2007-12-13 インテル・コーポレーション マイクロエレクトロメカニカルシステム（ｍｅｍｓ）と受動素子が集積化されたモジュール
JP4746611B2 (ja) * 2004-06-30 2011-08-10 インテル・コーポレーション マイクロエレクトロメカニカルシステム（ｍｅｍｓ）と受動素子が集積化されたモジュール
JP2013021096A (ja) * 2011-07-11 2013-01-31 Disco Abrasive Syst Ltd 積層ウェーハの加工方法

Also Published As

Publication number Publication date
TW200303046A (en) 2003-08-16
US6955976B2 (en) 2005-10-18
EP1333485A3 (en) 2005-11-30
US20050191791A1 (en) 2005-09-01
EP1333485A2 (en) 2003-08-06
TWI261318B (en) 2006-09-01
US20030148553A1 (en) 2003-08-07
US7042105B2 (en) 2006-05-09

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