JP2003229638A - 窒化物系化合物半導体発光素子 - Google Patents

窒化物系化合物半導体発光素子

Info

Publication number
JP2003229638A
JP2003229638A JP2002027981A JP2002027981A JP2003229638A JP 2003229638 A JP2003229638 A JP 2003229638A JP 2002027981 A JP2002027981 A JP 2002027981A JP 2002027981 A JP2002027981 A JP 2002027981A JP 2003229638 A JP2003229638 A JP 2003229638A
Authority
JP
Japan
Prior art keywords
density defect
substrate
nitride
density
compound semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002027981A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003229638A5 (enExample
Inventor
Kyoji Yamaguchi
恭司 山口
Kensaku Motoki
健作 元木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Sumitomo Electric Industries Ltd
Original Assignee
Sony Corp
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp, Sumitomo Electric Industries Ltd filed Critical Sony Corp
Priority to JP2002027981A priority Critical patent/JP2003229638A/ja
Publication of JP2003229638A publication Critical patent/JP2003229638A/ja
Publication of JP2003229638A5 publication Critical patent/JP2003229638A5/ja
Pending legal-status Critical Current

Links

Landscapes

  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
JP2002027981A 2002-02-05 2002-02-05 窒化物系化合物半導体発光素子 Pending JP2003229638A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002027981A JP2003229638A (ja) 2002-02-05 2002-02-05 窒化物系化合物半導体発光素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002027981A JP2003229638A (ja) 2002-02-05 2002-02-05 窒化物系化合物半導体発光素子

Publications (2)

Publication Number Publication Date
JP2003229638A true JP2003229638A (ja) 2003-08-15
JP2003229638A5 JP2003229638A5 (enExample) 2005-08-18

Family

ID=27749339

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002027981A Pending JP2003229638A (ja) 2002-02-05 2002-02-05 窒化物系化合物半導体発光素子

Country Status (1)

Country Link
JP (1) JP2003229638A (enExample)

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005175247A (ja) * 2003-12-12 2005-06-30 Sharp Corp 窒化物半導体発光素子の位置決め方法と、この位置決め方法を用いた窒化物半導体装置の製造方法
JP2006294975A (ja) * 2005-04-13 2006-10-26 Mitsubishi Electric Corp 半導体レーザ
JP2006339213A (ja) * 2005-05-31 2006-12-14 Sony Corp 半導体発光素子
JP2007180588A (ja) * 2007-03-29 2007-07-12 Sanyo Electric Co Ltd 窒化物系半導体レーザ素子
JP2007180589A (ja) * 2003-02-07 2007-07-12 Sanyo Electric Co Ltd 半導体素子およびその製造方法
WO2008004437A1 (en) 2006-07-05 2008-01-10 Panasonic Corporation Semiconductor light emitting element and method for fabricating the same
US7327770B2 (en) 2003-04-24 2008-02-05 Sharp Kabushiki Kaisha Nitride semiconductor laser device
US7372077B2 (en) 2003-02-07 2008-05-13 Sanyo Electric Co., Ltd. Semiconductor device
JP2008130832A (ja) * 2006-11-21 2008-06-05 Sumitomo Electric Ind Ltd 半導体発光素子および半導体発光素子の製造方法
US7387678B2 (en) 2003-06-26 2008-06-17 Sumitomo Electric Industries, Ltd. GaN substrate and method of fabricating the same, nitride semiconductor device and method of fabricating the same
JP2008177438A (ja) * 2007-01-19 2008-07-31 Sumitomo Electric Ind Ltd 窒化物半導体発光素子
JP2008198998A (ja) * 2007-02-13 2008-08-28 Samsung Electro-Mechanics Co Ltd 半導体発光素子
JP2008294343A (ja) * 2007-05-28 2008-12-04 Sanyo Electric Co Ltd 窒化物系半導体レーザ素子の作製方法
JP2008294344A (ja) * 2007-05-28 2008-12-04 Sanyo Electric Co Ltd 窒化物系半導体レーザ素子の作製方法
JP2009177211A (ja) * 2003-02-07 2009-08-06 Sanyo Electric Co Ltd 半導体素子およびその製造方法
JP2011151424A (ja) * 2011-05-09 2011-08-04 Sony Corp 複数ビーム型の半導体発光素子
JP2011187993A (ja) * 2011-06-15 2011-09-22 Sumitomo Electric Ind Ltd 半導体発光素子および半導体発光素子の製造方法
JP2012074740A (ja) * 2011-12-28 2012-04-12 Sumitomo Electric Ind Ltd 半導体発光素子
KR20180077433A (ko) * 2016-12-29 2018-07-09 주식회사 루미스탈 질화물 반도체 소자 및 이의 제조 방법

Cited By (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009177211A (ja) * 2003-02-07 2009-08-06 Sanyo Electric Co Ltd 半導体素子およびその製造方法
JP2007180589A (ja) * 2003-02-07 2007-07-12 Sanyo Electric Co Ltd 半導体素子およびその製造方法
US7372077B2 (en) 2003-02-07 2008-05-13 Sanyo Electric Co., Ltd. Semiconductor device
US7589357B2 (en) 2003-02-07 2009-09-15 Sanyo Electric Co., Ltd. Semiconductor device and method of fabricating the same
US8101465B2 (en) 2003-02-07 2012-01-24 Sanyo Electric Co., Ltd. Method of fabricating a semiconductor device with a back electrode
US7327770B2 (en) 2003-04-24 2008-02-05 Sharp Kabushiki Kaisha Nitride semiconductor laser device
US7387678B2 (en) 2003-06-26 2008-06-17 Sumitomo Electric Industries, Ltd. GaN substrate and method of fabricating the same, nitride semiconductor device and method of fabricating the same
JP2005175247A (ja) * 2003-12-12 2005-06-30 Sharp Corp 窒化物半導体発光素子の位置決め方法と、この位置決め方法を用いた窒化物半導体装置の製造方法
WO2006112228A1 (ja) * 2005-04-13 2006-10-26 Mitsubishi Denki Kabushiki Kaisha 半導体レーザ
US7920614B2 (en) 2005-04-13 2011-04-05 Mitsubishi Denki Kabushiki Kaisha Semiconductor laser
US7643527B2 (en) 2005-04-13 2010-01-05 Mitsubishi Denki Kabushiki Kaisha Semiconductor laser
JP2006294975A (ja) * 2005-04-13 2006-10-26 Mitsubishi Electric Corp 半導体レーザ
JP2006339213A (ja) * 2005-05-31 2006-12-14 Sony Corp 半導体発光素子
WO2008004437A1 (en) 2006-07-05 2008-01-10 Panasonic Corporation Semiconductor light emitting element and method for fabricating the same
US8178889B2 (en) 2006-07-05 2012-05-15 Panasonic Corporation Semiconductor light emitting element having a single defect concentrated region and a light emitting which is not formed on the single defect concentrated region
JP2008130832A (ja) * 2006-11-21 2008-06-05 Sumitomo Electric Ind Ltd 半導体発光素子および半導体発光素子の製造方法
JP2008177438A (ja) * 2007-01-19 2008-07-31 Sumitomo Electric Ind Ltd 窒化物半導体発光素子
US9018666B2 (en) 2007-02-13 2015-04-28 Samsung Electronics Co., Ltd. Semiconductor light emitting device
JP2008198998A (ja) * 2007-02-13 2008-08-28 Samsung Electro-Mechanics Co Ltd 半導体発光素子
JP2010118698A (ja) * 2007-02-13 2010-05-27 Samsung Electro-Mechanics Co Ltd 半導体発光素子
US8847266B2 (en) 2007-02-13 2014-09-30 Samsung Electronics Co., Ltd. Semiconductor light emitting device
JP2007180588A (ja) * 2007-03-29 2007-07-12 Sanyo Electric Co Ltd 窒化物系半導体レーザ素子
JP2008294344A (ja) * 2007-05-28 2008-12-04 Sanyo Electric Co Ltd 窒化物系半導体レーザ素子の作製方法
JP2008294343A (ja) * 2007-05-28 2008-12-04 Sanyo Electric Co Ltd 窒化物系半導体レーザ素子の作製方法
JP2011151424A (ja) * 2011-05-09 2011-08-04 Sony Corp 複数ビーム型の半導体発光素子
JP2011187993A (ja) * 2011-06-15 2011-09-22 Sumitomo Electric Ind Ltd 半導体発光素子および半導体発光素子の製造方法
JP2012074740A (ja) * 2011-12-28 2012-04-12 Sumitomo Electric Ind Ltd 半導体発光素子
KR20180077433A (ko) * 2016-12-29 2018-07-09 주식회사 루미스탈 질화물 반도체 소자 및 이의 제조 방법

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