JP2003229638A - Nitride compound semiconductor light emitting element - Google Patents
Nitride compound semiconductor light emitting elementInfo
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- JP2003229638A JP2003229638A JP2002027981A JP2002027981A JP2003229638A JP 2003229638 A JP2003229638 A JP 2003229638A JP 2002027981 A JP2002027981 A JP 2002027981A JP 2002027981 A JP2002027981 A JP 2002027981A JP 2003229638 A JP2003229638 A JP 2003229638A
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- density defect
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Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、窒化物系化合物半
導体発光素子に関し、更に詳細には、リーク電流の発生
を抑制した構成の窒化物系化合物半導体発光素子に関す
るものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a nitride-based compound semiconductor light-emitting device, and more particularly, to a nitride-based compound semiconductor light-emitting device configured to suppress the generation of leak current.
【０００２】[0002]
【従来の技術】ＧａＮ、ＡｌＧａＮ、ＧａＩｎＮ、Ａｌ
ＧａＩｎＮ、ＡｌＢＧａＩｎＮなどのナイトライド化合
物半導体（以下、窒化物系化合物半導体と言う）は、Ａ
ｌＧａＩｎＡｓ系やＡｌＧａＩｎＰ系などのIII −Ｖ族
化合物半導体に比べて、一般に、バンドギャップエネル
ギーＥｇが大きく、かつ直接遷移型半導体であるという
特徴を有している。この特徴により、これらの窒化物系
化合物半導体は、紫外線から赤色に至る広い波長範囲に
おいて発光する半導体レーザ素子や、発光ダイオード
（ＬＥＤ；Light Emitting Diode）などの半導体発光素
子を作製する材料として注目されている。そして、これ
らの半導体発光素子は、高密度光ディスクの記録／再生
光ピックアップ用の光源、フルカラー・ディスプレイの
発光素子、その他、環境・医療などの分野の発光デバイ
スとして、広く応用されつつある。2. Description of the Related Art GaN, AlGaN, GaInN, Al
A nitride compound semiconductor such as GaInN or AlBGaInN (hereinafter referred to as a nitride compound semiconductor) is A
Compared with III-V group compound semiconductors such as 1GaInAs series and AlGaInP series, the bandgap energy Eg is generally large and the semiconductor is a direct transition type semiconductor. Due to this feature, these nitride-based compound semiconductors are attracting attention as materials for producing semiconductor laser devices that emit light in a wide wavelength range from ultraviolet rays to red and semiconductor light emitting devices such as light emitting diodes (LEDs). ing. These semiconductor light emitting elements are being widely applied as light sources for recording / reproducing optical pickups for high-density optical discs, light emitting elements for full-color displays, and other light emitting devices in fields such as environment and medicine.
【０００３】また、これらの窒化物系化合物半導体に
は、例えば高電界域でＧａＮの飽和速度が大きいこと、
或いはＭＩＳ（Metal-Insulator-Semiconductor ）構造
の作製に際し、半導体層として窒化物系化合物半導体
を、絶縁層として窒化アルミニウム（ＡｌＮ）を用い、
半導体層及び絶縁層を連続して結晶成長させることが出
来るというような特徴がある。この特徴により、窒化物
系化合物半導体素子は、飽和ドリフト速度や静電破壊電
圧が大きく、高速動作性、高速スイッチング性、大電流
動作性などに優れた電子素子として注目されている。Further, these nitride-based compound semiconductors have a high GaN saturation rate in a high electric field region, for example.
Alternatively, in manufacturing a MIS (Metal-Insulator-Semiconductor) structure, a nitride compound semiconductor is used as a semiconductor layer and aluminum nitride (AlN) is used as an insulating layer,
There is a feature that the semiconductor layer and the insulating layer can be continuously crystal-grown. Due to this feature, the nitride-based compound semiconductor device is attracting attention as an electronic device that has a large saturation drift velocity and electrostatic breakdown voltage, and is excellent in high-speed operability, high-speed switching property, large-current operability, and the like.
【０００４】更に、窒化物系化合物半導体は、（１）熱
伝導性がＧａＡｓ系などより高いので、ＧａＡｓ系に比
べて高温下の高出力素子の材料として有利である、
（２）化学的に安定した材料であり、また硬度も高いの
で、信頼性の高い素子材料であると評価できる。Furthermore, since the nitride-based compound semiconductor has (1) higher thermal conductivity than that of GaAs-based semiconductors, it is advantageous as a material for high-power devices at high temperatures compared to GaAs-based semiconductors.
(2) Since it is a chemically stable material and has a high hardness, it can be evaluated as a highly reliable element material.
【０００５】一般に、半導体膜を基板上に成長させる時
には、成長膜と同類あるいは格子定数の近いバルク基板
を基板として用いる。従って、窒化物系半導体素子の場
合には、例えば同じ窒化物系半導体からなるＧａＮ基板
等が望ましいが、ＧａＮ基板の作製は超高圧、超高温の
もとで小さなサイズの基板ができているに過ぎず、実用
的に大きなサイズの基板を作製することは極めて困難で
ある。窒化物系半導体素子の基板としてＳｉＣ基板、Ｚ
ｎＯ基板、ＭｇＡｌ2 Ｏ4 基板も使用されてきたが、一
般的には、窒化物系半導体素子はサファイア基板上に作
製されることが最も多い。Generally, when a semiconductor film is grown on a substrate, a bulk substrate similar to the grown film or having a close lattice constant is used as the substrate. Therefore, in the case of a nitride-based semiconductor device, for example, a GaN substrate or the like made of the same nitride-based semiconductor is desirable, but a GaN substrate can be manufactured in a small size under ultrahigh pressure and ultrahigh temperature. However, it is extremely difficult to practically manufacture a large-sized substrate. SiC substrate, Z as a substrate of a nitride-based semiconductor device
Although nO substrates and MgAl 2 O 4 substrates have also been used, generally, nitride-based semiconductor devices are most often produced on sapphire substrates.
【０００６】サファイア基板は、高品質かつ安価で２イ
ンチ以上のサイズのものが供給されているが、窒化物系
半導体の典型であるＧａＮとは、格子不整合と熱膨張係
数差が大きいという問題を有する。また、サファイア基
板は、劈開性がなく、電気伝導性が小さく電気的に絶縁
である。例えば、サファイアとＧａＮとの格子不整合は
約１３％であって大きいので、サファイア基板とＧａＮ
層の間に緩衝層を設けて不整合を緩和し、良好な単結晶
のＧａＮ層をエピタキシャル成長させるようにしている
ものの、その欠陥密度は、例えば１０8 〜１０9 ｃｍ-2
程度にも達していて、半導体素子の動作信頼性にとって
悪影響を与えている。As sapphire substrates, high quality and inexpensive ones having a size of 2 inches or more are supplied, but there is a problem that a lattice mismatch and a large thermal expansion coefficient difference with GaN which is a typical nitride semiconductor. Have. In addition, the sapphire substrate has no cleavage, has low electrical conductivity, and is electrically insulating. For example, since the lattice mismatch between sapphire and GaN is about 13%, which is large, the sapphire substrate and GaN are
Although a buffer layer is provided between the layers to mitigate the mismatch and to grow a good single crystal GaN layer epitaxially, the defect density is, for example, 10 8 to 10 9 cm -2.
It has reached a certain level, which adversely affects the operational reliability of semiconductor devices.
【０００７】更に、（１）サファイア基板とＧａＮ層と
の熱膨張係数の差が大きいので、結晶成長膜が厚いと、
室温でも基板反りが大きくなって、クラックの発生が心
配される等の素子形成プロセス上で制約が多く、また、
（２）サファイア基板には劈開性が無く、鏡面性の高い
レーザ端面を安定して形成することが難しい、更には、
（３）サファイアが絶縁性のために、ＧａＡｓ系半導体
レーザ素子のように基板裏面に一方の電極を設けること
が難しく、ｐ側電極及びｎ側電極の双方を基板上の窒化
物系化合物半導体の積層構造側に設けることが必要とな
り、素子面積が広くなり、工程が複雑になる。Further, (1) since the difference in the coefficient of thermal expansion between the sapphire substrate and the GaN layer is large, if the crystal growth film is thick,
There are many restrictions on the device formation process, such as warpage of the substrate becoming large even at room temperature and cracks may occur.
(2) The sapphire substrate has no cleavage and it is difficult to stably form a laser end face having high specularity.
(3) Since sapphire has an insulating property, it is difficult to provide one electrode on the back surface of the substrate like a GaAs-based semiconductor laser device, and both the p-side electrode and the n-side electrode are made of a nitride-based compound semiconductor on the substrate. Since it is necessary to provide it on the laminated structure side, the element area becomes large and the process becomes complicated.
【０００８】そこで、窒化物系化合物半導体、特にＧａ
Ｎ系化合物半導体と格子整合するＧａＮ単結晶基板を工
業的に容易な方法で作製する研究が盛んに行われてい
る。その一つとして、例えば、特開２００１−１０２３
０７号公報は、気相成長の成長表面が平面状態でなく、
三次元的なファセット構造を持つようにし、ファセット
構造を持ったまま、ファセット構造を埋め込まないで成
長させることにより転位を低減するようにした単結晶窒
化ガリウムの結晶成長方法を開示している。本方法によ
れば、窓付きマスクを介してＧａＡｓ基板上にＧａＮ単
結晶層を成長させ、成長させたＧａＮ単結晶層をスライ
シングすることにより、ＧａＮ単結晶基板を作製するこ
とができる。Therefore, nitride compound semiconductors, especially Ga
Research has been actively conducted to produce a GaN single crystal substrate that is lattice-matched with an N-based compound semiconductor by an industrially easy method. As one of them, for example, Japanese Patent Laid-Open No. 2001-1023
No. 07 publication discloses that the growth surface of vapor phase growth is not in a flat state,
Disclosed is a crystal growth method of single crystal gallium nitride, which has a three-dimensional facet structure and grows the facet structure without embedding the facet structure to reduce dislocations. According to this method, a GaN single crystal layer can be produced by growing a GaN single crystal layer on a GaAs substrate through a windowed mask and slicing the grown GaN single crystal layer.
【０００９】[0009]
【発明が解決しようとする課題】ところで、前掲公報に
記載されているような方法によって作製したＧａＮ基板
上に窒化物系化合物半導体層の積層構造を有する発光素
子を形成した場合、電極の配置場所いかんによっては、
リーク電流が大きいという問題があった。リーク電流
は、発光に寄与しない無効電流となるため、電気的、光
学的特性等の素子特性が悪化し、素子性能のばらつきの
原因となる。また、素子性能のばらつきは、製品歩留ま
りの悪化を招くことになる。By the way, when a light emitting device having a laminated structure of a nitride-based compound semiconductor layer is formed on a GaN substrate manufactured by the method described in the above-mentioned publication, the place where the electrode is arranged. Depending on the situation,
There was a problem that the leak current was large. Since the leak current is a reactive current that does not contribute to light emission, element characteristics such as electrical and optical characteristics are deteriorated and cause variations in element performance. Further, variations in element performance lead to deterioration in product yield.
【００１０】そこで、半導体基板の特質を利用して、リ
ーク電流の発生を抑制する研究が進められていて、本発
明の目的は、そのような構成の窒化物系化合物半導体発
光素子を提供することである。Therefore, studies are underway to suppress the generation of leakage current by utilizing the characteristics of the semiconductor substrate, and an object of the present invention is to provide a nitride compound semiconductor light emitting device having such a structure. Is.
【００１１】[0011]
【課題を解決するための手段】本発明者は、上述の課題
を解決する研究の過程で、低密度欠陥領域中に高密度欠
陥領域が規則的、例えば周期的に配列されている、新規
な構成の半導体基板として開発されたＧａＮ単結晶基板
に注目した。このＧａＮ単結晶基板は、特開２００１−
１０２３０７号公報に開示された技術を改良し、低密度
欠陥領域中に発生する高密度欠陥領域の位置を制御する
ことにより、開発されたものである。In the course of research for solving the above-mentioned problems, the present inventor has found that a high density defect region is regularly, for example, periodically arranged in a low density defect region. Attention was paid to a GaN single crystal substrate developed as a semiconductor substrate having a constitution. This GaN single crystal substrate is disclosed in
It was developed by improving the technology disclosed in Japanese Patent No. 102307 and controlling the position of a high density defect region generated in a low density defect region.
【００１２】開発された半導体基板の高密度欠陥領域の
配列パターンは、自在であって、例えば、図４に示すよ
うな六方格子状の配列、図６（ａ）に示すような正方形
格子状の配列、図６（ｂ）に示すように長方形格子状の
配列等がある。図４（ａ）及び（ｂ）は、それぞれ、高
密度欠陥領域を説明するＧａＮ基板の平面図及び断面図
である。また、高密度欠陥領域の配列パターンは、上述
のような分散型パターンだけではなく、例えば図７
（ａ）に示すように、点状の高密度欠陥領域が断続して
線状に配置されたもの、更には図７（ｂ）に示すよう
に、高密度欠陥領域が線状に連続しているものも作製可
能である。The array pattern of the high-density defect regions of the developed semiconductor substrate is flexible, and for example, a hexagonal grid array as shown in FIG. 4 or a square grid pattern as shown in FIG. An array, a rectangular grid array as shown in FIG. 4A and 4B are a plan view and a cross-sectional view of a GaN substrate, respectively, for explaining the high density defect region. Further, the arrangement pattern of the high-density defect areas is not limited to the distributed pattern as described above, and for example, as shown in FIG.
As shown in (a), dot-like high-density defect regions are arranged in a line intermittently, and further, as shown in FIG. 7 (b), high-density defect regions are linearly continuous. It is also possible to produce existing ones.
【００１３】ここで、ＧａＮ単結晶基板の作製方法を説
明する。ＧａＮ単結晶の基本的な結晶成長メカニズム
は、ファセット面からなる斜面を有して成長し、そのフ
ァセット面斜面を維持して、成長することで、転位を伝
播させ、所定の位置に転位を集合させる。このファセッ
ト面により成長した領域は、転位の移動により、低欠陥
領域となる。一方、そのファセット面斜面下部には、明
確な境界を持った高密度の欠陥領域を有して成長が行わ
れ、転位は、高密度の欠陥領域の境界あるいはその内部
に集合し、ここで消滅あるいは蓄積する。Here, a method of manufacturing a GaN single crystal substrate will be described. The basic crystal growth mechanism of a GaN single crystal is that it grows with an inclined surface composed of facet planes, and while maintaining the inclined surface of the facet plane, the dislocation propagates and the dislocations gather at a predetermined position. Let The region grown by this facet plane becomes a low defect region due to the movement of dislocations. On the other hand, in the lower part of the slope of the facet plane, growth is performed with a high-density defect region having a clear boundary, and dislocations are gathered at the boundary of the high-density defect region or inside thereof and disappear here. Or accumulate.
【００１４】この高密度の欠陥領域の形状によって、フ
ァセット面の形状も異なる。欠陥領域が、ドット状の場
合は、そのドットを底として、ファセット面が取り巻
き、ファセット面からなるピットを形成する。また、欠
陥領域が、ストライプ状の場合は、ストライプを谷底と
して、その両側にファセット面傾斜面を有し、横に倒し
た３角形のプリズム状のファセット面となる。The shape of the facet surface also differs depending on the shape of this high-density defect region. If the defective area is dot-shaped, the facet surface surrounds the dot and forms a pit composed of the facet surface. Further, when the defect region is in the shape of a stripe, the stripe is a valley bottom, and facet inclined surfaces are formed on both sides of the valley to form a triangular prism-shaped facet which is laid sideways.
【００１５】この高密度の欠陥領域は、いくつかの状態
があり得る。例えば、多結晶からなる場合がある。ま
た、単結晶であるが、周りの低欠陥領域に対して、微傾
斜している場合もある。また、周りの低欠陥領域に対し
て、Ｃ軸が反転している場合もある。こうして、この高
密度の欠陥領域は、明確な、境界を有しており、周りと
区別される。この高欠陥密度領域を有して成長すること
により、その周りの、ファセット面を埋め込むことな
く、ファセット面を維持して成長を進行することができ
る。その後、ＧａＮ成長層の表面を研削、研磨を施すこ
とにより、表面を平坦化し、基板として、使用できる形
態とすることができる。This dense defect region can have several states. For example, it may be made of polycrystal. Although it is a single crystal, it may be slightly inclined with respect to the surrounding low defect region. Further, the C axis may be inverted with respect to the surrounding low defect area. Thus, this dense defect region has a well-defined boundary and is distinguished from the surroundings. By growing with this high defect density region, the facet surface around it can be maintained and the growth can be promoted without burying the facet surface. After that, the surface of the GaN growth layer is ground and polished to flatten the surface, so that it can be used as a substrate.
【００１６】この高密度の欠陥領域を形成する方法は、
下地基板上に、ＧａＮを結晶成長する際に、高密度欠陥
領域を形成する場所に、種を予め形成しておくことによ
り、発生させることができる。その種としては、種とな
る微小領域に非晶質、あるいは多結晶の層を形成する。
その上から、ＧａＮを成長することで、丁度その種の領
域に、高密度の欠陥領域を形成することが出来る。The method of forming this high-density defect region is as follows.
It can be generated by forming seeds in advance at the place where the high-density defect region is formed when GaN crystal is grown on the base substrate. As the seed, an amorphous or polycrystalline layer is formed in a minute region as the seed.
By growing GaN on it, a high-density defect region can be formed just in that kind of region.
【００１７】ＧａＮ単結晶基板の具体的な製造方法とし
ては、次の通りである。まず、ＧａＮ層を成長させる下
地基板を用いる。下地基板は、必ずしも特定せず、一般
的なサファイア基板でも良いが、後工程で下地基板を除
去することを考慮すると、ＧａＡｓ基板等が好ましい。
下地基板の上に、例えば、ＳｉＯ2層からなる種を規則
的に、例えば周期的に形成する。種の形状は、高密度欠
陥領域の配列、形状に従って、ドット状、あるいはスト
ライプ状である。その後、Hydride Vapor Phase Epitax
y(ＨＶＰＥ)にて、ＧａＮを厚膜成長する。成長後、表
面には、種のパターン形状に応じた、ファセット面が形
成される。例えば、種がドット状のパターンの場合は、
ファセット面からなるピットが規則正しく形成され、種
がストライプ状の場合は、プリズム状のファセット面が
形成される。A specific method of manufacturing a GaN single crystal substrate is as follows. First, a base substrate for growing a GaN layer is used. The base substrate is not necessarily specified and may be a general sapphire substrate, but a GaAs substrate or the like is preferable in consideration of removing the base substrate in a later step.
On the base substrate, for example, a seed made of a SiO 2 layer is regularly formed, for example, periodically. The shape of the seed is a dot shape or a stripe shape according to the arrangement and shape of the high-density defect regions. After that, Hydride Vapor Phase Epitax
A thick film of GaN is grown by y (HVPE). After the growth, a facet surface is formed on the surface according to the seed pattern shape. For example, if the seed is a dot pattern,
Pits composed of facet planes are regularly formed, and when the seeds are stripes, prismatic facet planes are formed.
【００１８】ＧａＮ層を成長させた後、下地基板を除去
し、さらに、ＧａＮの厚膜層を、研削加工、研磨加工し
て表面を平坦化する。それによって、ＧａＮ基板を製造
することができる。ＧａＮ基板の厚さは、自由に設定出
来る。この様にして作製された、ＧａＮ基板は、Ｃ面が
主面であり、その中に、所定のサイズのドット状あるい
はストライプ状の高欠陥密度領域が規則正しく、形成さ
れた基板となっている。高欠陥密度領域以外の単結晶領
域は、高欠陥密度領域に比べ、転位密度が著しく低い低
転位密度領域となっている。After growing the GaN layer, the underlying substrate is removed, and the GaN thick film layer is ground and polished to flatten the surface. Thereby, a GaN substrate can be manufactured. The thickness of the GaN substrate can be set freely. The GaN substrate manufactured in this manner has a C-plane as the main surface, in which dot-shaped or stripe-shaped high defect density regions of a predetermined size are regularly formed. The single crystal region other than the high defect density region is a low dislocation density region in which the dislocation density is significantly lower than the high defect density region.
【００１９】本発明者は、研究を進めていく過程で、高
密度欠陥領域に電極を配置すると、リーク電流が結晶欠
陥を介して流れることを見い出した。それは、図５に示
すように、上述のＧａＮ基板７６上に形成された積層構
造８０では、ＧａＮ基板７６の高密度欠陥領域７８の結
晶欠陥が上方の積層構造８０にも伝搬してその部分が高
密度欠陥領域８２となる。つまり、高密度欠陥領域７８
上に成長した積層構造部分はどうしても高密度欠陥領域
となる。そして、リーク電流は、電極から積層構造の高
密度欠陥領域を通って流れることになる。そして、高密
度欠陥領域を通るリーク電流が生じないように、低密度
欠陥領域に電極を配置することを着想し、種々の実験の
末に、本発明を発明するに到った。以上の説明では、主
として、半導体レーザ素子を例にして説明したが、これ
は、窒化物系化合物半導体発光素子全般に該当すること
である。In the course of research, the inventor of the present invention found that when an electrode is arranged in a high density defect region, a leak current flows through a crystal defect. As shown in FIG. 5, in the laminated structure 80 formed on the GaN substrate 76 described above, the crystal defects in the high-density defect region 78 of the GaN substrate 76 propagate to the upper laminated structure 80, and the portion is formed. The high density defect region 82 is formed. That is, the high density defect region 78
The layered structure portion grown above becomes a high density defect region. Then, the leak current flows from the electrode through the high-density defect region of the laminated structure. Then, the present invention was invented at the end of various experiments after arranging an electrode in a low-density defect region so as to prevent a leak current from passing through the high-density defect region. In the above description, a semiconductor laser device has been mainly described as an example, but this applies to all nitride compound semiconductor light emitting devices.
【００２０】上記目的を達成するために、本発明に係る
窒化物系化合物半導体発光素子（以下、第１の発明と言
う）は、周囲の低密度欠陥領域より結晶欠陥密度が高い
高密度欠陥領域が周期的な基板面上配列で基板を貫通し
ている半導体結晶基板上に、窒化物系化合物半導体の積
層構造を備える窒化物系化合物半導体発光素子であっ
て、積層構造を挟む１対の電極の一方の電極は基板裏面
の低密度欠陥領域上に設けられ、他方の電極は基板の低
密度欠陥領域上方の積層構造上に設けられ、かつ活性領
域が１対の電極で挟まれた積層構造内に形成されている
ことを特徴としている。To achieve the above object, a nitride-based compound semiconductor light-emitting device according to the present invention (hereinafter referred to as the first invention) has a high density defect region having a higher crystal defect density than the surrounding low density defect region. A nitride-based compound semiconductor light-emitting device having a laminated structure of a nitride-based compound semiconductor on a semiconductor crystal substrate which penetrates through the substrate in a periodic array on the substrate surface, and a pair of electrodes sandwiching the laminated structure. One electrode is provided on the low density defect region on the back surface of the substrate, the other electrode is provided on the laminated structure above the low density defect region of the substrate, and the active region is sandwiched by a pair of electrodes It is characterized by being formed inside.
【００２１】本発明に係る別の窒化物系化合物半導体発
光素子（以下、第２の発明と言う）は、周囲の低密度欠
陥領域より結晶欠陥密度が高い高密度欠陥領域が周期的
な基板面上配列で基板を貫通している半導体結晶基板上
に、窒化物系化合物半導体の積層構造を備える窒化物系
化合物半導体発光素子であって、基板の高密度欠陥領域
間の低密度欠陥領域上の積層構造は、上部がリッジスト
ライプとしてに形成され、かつリッジストライプの両脇
が絶縁膜で被覆され、積層構造を挟む１対の電極の一方
の電極が基板の高密度欠陥領域間の低密度欠陥領域上に
設けられ、他方の電極がリッジストライプ上に延在し、
更にリッジストライプ脇の絶縁膜を介して高密度欠陥領
域上方の積層構造上に延在していることを特徴としてい
る。Another nitride-based compound semiconductor light-emitting device according to the present invention (hereinafter referred to as the second invention) has a substrate surface in which high density defect regions having a higher crystal defect density than the surrounding low density defect regions are periodic. A nitride-based compound semiconductor light-emitting device having a laminated structure of a nitride-based compound semiconductor on a semiconductor crystal substrate penetrating the substrate in an upper array, the device comprising: In the laminated structure, the upper portion is formed as a ridge stripe, and both sides of the ridge stripe are covered with an insulating film, and one electrode of a pair of electrodes sandwiching the laminated structure has a low density defect between high density defect regions of a substrate. Is provided on the region, the other electrode extends on the ridge stripe,
Further, it is characterized in that it extends over the laminated structure above the high density defect region through an insulating film on the side of the ridge stripe.
【００２２】高密度欠陥領域は、基板を貫通する柱状又
は柱が横方向に連続して繋がっている板状の領域であ
り、高密度欠陥領域の断面形状は任意である。本発明
で、窒化物系化合物半導体発光素子を構成する窒化物系
化合物半導体層の積層構造の活性領域は、高密度欠陥領
域と高密度欠陥領域との間の低密度欠陥領域上に設けて
ある。The high-density defect region is a plate-like region in which columns or columns penetrating the substrate are continuously connected in the lateral direction, and the cross-sectional shape of the high-density defect region is arbitrary. In the present invention, the active region of the laminated structure of the nitride-based compound semiconductor layer that constitutes the nitride-based compound semiconductor light-emitting device is provided on the low-density defect region between the high-density defect region and the high-density defect region. .
【００２３】本発明の窒化物系化合物半導体発光素子
は、窒化物系半導体レーザ素子、窒化物系半導体発光ダ
イオード等を含む概念である。また、半導体結晶基板と
は、結晶欠陥密度が周囲より高い領域として、周期的な
基板面上配列で基板を貫通している高密度欠陥領域を有
する限り、その組成に制約はない。窒化物系化合物半導
体とは、Ａｌa Ｂb Ｇａc Ｉｎd Ｎ（ａ＋ｂ＋ｃ＋ｄ＝
１、０≦ａ、ｂ、ｃ、ｄ≦１）を言う。The nitride-based compound semiconductor light-emitting device of the present invention is a concept including a nitride-based semiconductor laser device, a nitride-based semiconductor light emitting diode, and the like. The composition of the semiconductor crystal substrate is not limited as long as it has high density defect regions penetrating the substrate in a periodic array on the substrate surface as a region having a higher crystal defect density than the surroundings. A nitride-based compound semiconductor means Al a B b Ga c In d N (a + b + c + d =
1, 0 ≦ a, b, c, d ≦ 1).
【００２４】電極の平面形状には制約はなく、例えば、
基板裏面上にほぼ全面に設けられた電極層から高密度欠
陥領域と接触しないように一部を切り欠いてなる電極層
として一方の電極を形成しても良い。第１の発明では、
ｐ側電極及びｎ側電極が、低密度欠陥領域上に形成され
ているので、高密度欠陥領域を介して流れるリーク電流
を大幅に低減させることができる。また、第２の発明で
は、ｐ側電極は高密度欠陥領域上にも延在しているもの
の、絶縁膜によって高密度欠陥領域から絶縁されている
ので、ｐ側電極は低密度欠陥領域上にのみ形成されてい
る第１の発明と同様に作用する。There are no restrictions on the planar shape of the electrodes.
One electrode may be formed as an electrode layer formed by cutting out a part of the electrode layer provided on the back surface of the substrate almost all over so as not to contact the high density defect region. In the first invention,
Since the p-side electrode and the n-side electrode are formed on the low density defect region, the leak current flowing through the high density defect region can be significantly reduced. Further, in the second invention, although the p-side electrode extends over the high-density defect region, it is insulated from the high-density defect region by the insulating film, so that the p-side electrode overlies the low-density defect region. It operates similarly to the first invention in which it is formed only.
【００２５】本発明では、高密度欠陥領域の配列パター
ンは自在であって、具体的には、高密度欠陥領域が、半
導体結晶基板の基板面上で周期的に、例えば正方形格子
状、長方形格子状、及び六方格子状のいずれかの配置で
点在していても良い。また、高密度欠陥領域が、半導体
結晶基板の基板面上で相互に離隔して平行に、かつ周期
的に配置された線状の高密度欠陥領域であって、点状の
高密度欠陥領域が相互に接して、又は断続して線状に配
置されてなる高密度欠陥領域、又は高密度欠陥領域が連
続して線状に延在してなる高密度欠陥領域であっても良
い。In the present invention, the arrangement pattern of the high-density defect regions is free. Specifically, the high-density defect regions are periodically arranged on the substrate surface of the semiconductor crystal substrate, for example, in a square lattice shape or a rectangular lattice shape. It may be scattered in any one of a rectangular shape and a hexagonal lattice shape. In addition, the high-density defect regions are linear high-density defect regions that are spaced apart from each other in parallel and periodically on the substrate surface of the semiconductor crystal substrate, and the dot-shaped high-density defect regions are It may be a high-density defect region that is arranged linearly in contact with each other or intermittently, or a high-density defect region in which the high-density defect regions continuously extend linearly.
【００２６】[0026]
【発明の実施の形態】以下に、添付図面を参照し、実施
形態例を挙げて本発明の実施の形態を具体的かつ詳細に
説明する。尚、以下の実施形態例で示す積層構造の構
成、化合物半導体層の組成等は、本発明の理解を容易に
するための一つの例示であって、本発明はこの例示に限
定されるものではない。実施形態例１
本実施形態例は、第１の発明に係る窒化物系化合物半導
体発光素子を窒化物系半導体レーザ素子に適用した実施
形態の一例であって、図１は窒化物系半導体レーザ素子
の断面図である。図２（ａ）及び（ｂ）は、それぞれ、
積層構造上のｐ側電極の配置、及び基板裏面のｎ側電極
の配置を示す平面図である。図４（ａ）及び（ｂ）は、
それぞれ、本実施形態例の窒化物系半導体レーザ素子の
ＧａＮ基板の高密度欠陥領域の配置を示す平面図及び断
面図である。BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, embodiments of the present invention will be described specifically and in detail with reference to the accompanying drawings by way of example embodiments. The structure of the laminated structure, the composition of the compound semiconductor layer, and the like shown in the following embodiments are merely examples for facilitating the understanding of the present invention, and the present invention is not limited to these examples. Absent. Embodiment 1 This embodiment is an example of an embodiment in which the nitride-based compound semiconductor light emitting device according to the first invention is applied to a nitride-based semiconductor laser device, and FIG. 1 is a nitride-based semiconductor laser device. FIG. 2A and 2B respectively show
FIG. 4 is a plan view showing the arrangement of p-side electrodes on the laminated structure and the arrangement of n-side electrodes on the back surface of the substrate. 4 (a) and (b),
3A and 3B are a plan view and a cross-sectional view, respectively, showing an arrangement of high-density defect regions of a GaN substrate of the nitride-based semiconductor laser device of the present embodiment example.
【００２７】本実施形態例の窒化物系半導体レーザ素子
１０が形成されるＧａＮ基板７６は、図４（ａ）及び
（ｂ）に示すように、結晶欠陥密度が周囲の領域より高
い、いわゆる高密度欠陥領域７８がＧａＮ基板７６を貫
通して、かつ、平面的には基板面上で周期的な六方格子
状配列で存在しているという特質を有している。本実施
形態例の窒化物系半導体レーザ素子１０のＧａＮ基板１
２は、ＧａＮ基板７６上で、図８（ａ）に示すような配
置で区画されている。図８（ａ）中、９０は窒化物系半
導体レーザ素子１０のレーザストライプを示している。
本実施形態例の窒化物系半導体レーザ素子１０は、図１
に示すように、ｎ型ＧａＮ基板１２上に、ｎ型ＡｌＧａ
Ｎクラッド層１４、ｎ型ＧａＮ第１光ガイド層１６、Ｉ
ｎＧａＮ活性層１８、ｐ型ＩｎＧａＮ第２光ガイド層２
０、ｐ型ＡｌＧａＮクラッド層２２、及びｐ型ＧａＮコ
ンタクト層２４を、順次、積層した積層構造を備えてい
る。As shown in FIGS. 4A and 4B, the GaN substrate 76 on which the nitride-based semiconductor laser device 10 of this embodiment is formed has a crystal defect density higher than that of the surrounding region, that is, a so-called high level. The density defect regions 78 penetrate the GaN substrate 76, and have the characteristic that they exist in a planar hexagonal lattice array on the substrate surface in plan view. GaN substrate 1 of nitride-based semiconductor laser device 10 of the present embodiment example
2 are partitioned on the GaN substrate 76 in an arrangement as shown in FIG. In FIG. 8A, 90 indicates a laser stripe of the nitride-based semiconductor laser device 10.
The nitride-based semiconductor laser device 10 of the present embodiment example is shown in FIG.
, The n-type GaN substrate 12 is overlaid with n-type AlGa.
N-clad layer 14, n-type GaN first optical guide layer 16, I
nGaN active layer 18, p-type InGaN second optical guide layer 2
0, the p-type AlGaN clad layer 22, and the p-type GaN contact layer 24 are sequentially laminated to have a laminated structure.
【００２８】ｐ型クラッド層２２の上層部及びｐ型コン
タクト層２４は、一方向にリッジストライプ状に延びる
リッジストライプ部２６として形成されている。リッジ
ストライプ部２６の両脇、つまりｐ型クラッド層２２の
上層部及びｐ型コンタクト層２４の両側、並びにｐ型ク
ラッド層２２上は、ＳｉＯ2 又はＳｉＮ X からなる絶縁
膜２８で被覆されている。The upper layer portion of the p-type cladding layer 22 and the p-type capacitor
The tact layer 24 extends in one direction in a ridge stripe shape.
It is formed as a ridge stripe portion 26. ridge
Both sides of the stripe portion 26, that is, the p-type cladding layer 22
Both sides of the upper layer portion and the p-type contact layer 24, and the p-type contact layer
SiO on the rud layer 222Or SiN XInsulation consisting of
It is covered with a membrane 28.
【００２９】ｎ型ＧａＮ基板１２は、図４に示すＧａＮ
基板７６と同様に、結晶欠陥密度が周囲の領域より高
い、いわゆる高密度欠陥領域１２ａがｎ型ＧａＮ基板１
２を貫通して、かつ、平面的には基板面上で周期的な配
列で存在しているという特質を有している。本実施形態
例のｎ型ＧａＮ基板１２では、高密度欠陥領域１２ａは
正三角形の千鳥格子状配置で円柱状に生成している（図
２参照）。ｎ型ＧａＮ基板１２の高密度欠陥領域１２ａ
の結晶欠陥は、図１に示すように、ｎ型ＡｌＧａＮクラ
ッド層１４、ｎ型ＧａＮ第１光ガイド層１６、ＩｎＧａ
Ｎ活性層１８、ｐ型ＩｎＧａＮ第２光ガイド層２０、ｐ
型ＡｌＧａＮクラッド層２２、及びｐ型ＧａＮコンタク
ト層２４に、順次、伝搬し、高密度欠陥領域３０を生成
させている。リッジストライプ部２６は、高密度欠陥領
域３０と高密度欠陥領域３０の間に形成されている。The n-type GaN substrate 12 is the GaN shown in FIG.
Similar to the substrate 76, the so-called high-density defect region 12a, which has a higher crystal defect density than the surrounding region, is the n-type GaN substrate 1.
It has a characteristic that it penetrates 2 and exists in a periodic array on the substrate surface in plan view. In the n-type GaN substrate 12 of the present embodiment example, the high-density defect regions 12a are formed in a columnar shape in an equilateral triangular zigzag lattice arrangement (see FIG. 2). High-density defect region 12a of n-type GaN substrate 12
As shown in FIG. 1, the crystal defects of the n-type AlGaN cladding layer 14, the n-type GaN first optical guide layer 16, the InGa
N active layer 18, p-type InGaN second optical guide layer 20, p
The high-density defect region 30 is generated by sequentially propagating to the p-type AlGaN cladding layer 22 and the p-type GaN contact layer 24. The ridge stripe portion 26 is formed between the high density defect regions 30.
【００３０】ｐ型コンタクト層２４上には、絶縁膜２８
の開口部２８ａを介してＮｉ／Ａｕ電極のような多層金
属膜のｐ側電極３２がオーミック接合電極として設けら
れている。また、ＧａＮ基板の導電性を利用して、ｎ型
ＧａＮ基板１２の裏面には、Ｔｉ／Ａｌ電極のような多
層金属膜のｎ側電極３４がオーミック接合電極として設
けられている。ｐ側電極３２は、図２（ａ）に示すよう
に、高密度欠陥領域３０と高密度欠陥領域３０との間を
リッジストライプ部２６に沿って延在している。また、
ｎ側電極３４は、図２（ｂ）に示すように、ｎ型ＧａＮ
基板１２の裏面上にほぼ全面に設けられた電極層からｎ
型ＧａＮ基板１２の高密度欠陥領域１２ａと接触しない
ように一部を切り欠いてなる電極層として形成されてい
る。An insulating film 28 is formed on the p-type contact layer 24.
A p-side electrode 32 of a multi-layer metal film such as a Ni / Au electrode is provided as an ohmic contact electrode through the opening 28a. Further, utilizing the conductivity of the GaN substrate, an n-side electrode 34 of a multi-layer metal film such as a Ti / Al electrode is provided as an ohmic contact electrode on the back surface of the n-type GaN substrate 12. As shown in FIG. 2A, the p-side electrode 32 extends between the high density defect regions 30 and along the ridge stripe portion 26. Also,
As shown in FIG. 2B, the n-side electrode 34 is made of n-type GaN.
From the electrode layer provided on almost the entire back surface of the substrate 12 to n
The GaN substrate 12 is formed as an electrode layer with a part cut away so as not to come into contact with the high density defect region 12a.
【００３１】実施形態例２
本実施形態例は、第２の発明に係る窒化物系化合物半導
体発光素子を窒化物系半導体レーザ素子に適用した実施
形態の一例であって、図３は窒化物系半導体レーザ素子
の断面図である。本実施形態例の窒化物系半導体レーザ
素子４０は、図３に示すように、ｐ側電極４２が、ｐ型
コンタクト層２４上に延在し、更に絶縁膜２８を介して
高密度欠陥領域３０上まで延在していること、及びｎ側
電極４４がｎ型ＧａＮ基板１２の高密度欠陥領域１２ａ
間の低密度欠陥領域上に設けられていることを除いて、
実施形態例１の窒化物系半導体レーザ素子１０と同じ構
成を備えている。 Embodiment 2 This embodiment is an example of an embodiment in which the nitride-based compound semiconductor light emitting device according to the second invention is applied to a nitride-based semiconductor laser device, and FIG. 3 is a nitride-based semiconductor laser device. It is sectional drawing of a semiconductor laser element. In the nitride-based semiconductor laser device 40 of the present embodiment example, as shown in FIG. 3, the p-side electrode 42 extends on the p-type contact layer 24, and the high-density defect region 30 is further interposed via the insulating film 28. And that the n-side electrode 44 extends to the top and the high-density defect region 12a of the n-type GaN substrate 12
Except that it is provided on the low density defect area between
It has the same configuration as the nitride-based semiconductor laser device 10 of the first embodiment.
【００３２】実施形態例１及び２では、ｐ側電極及びｎ
側電極が、低密度欠陥領域上に形成されているので、高
密度欠陥領域を介して流れるリーク電流を大幅に低減さ
せることができる。In the first and second embodiments, the p-side electrode and n
Since the side electrode is formed on the low density defect region, the leak current flowing through the high density defect region can be significantly reduced.
【００３３】上述の実施形態例では、ＧａＮ基板とし
て、高密度欠陥領域が正方形格子状に配列されているＧ
ａＮ基板７６を用いているが、これに限らず、例えば図
８（ｂ）に示すように、高密度欠陥領域が正方形格子状
に配置されているＧａＮ基板９２、また、図８（ｃ）に
示すように、高密度欠陥領域が長方形格子状に配置され
ているＧａＮ基板９４を用いることができる。更には、
図９（ａ）及び（ｂ）に示すように、高密度欠陥領域が
線状に配置されているＧａＮ基板９６、９８を用いるこ
とができる。図８及び図９は高密度欠陥領域とレーザス
トライプとの位置関係を示している。尚、図８及び図９
中、９０はレーザストライプである。In the above-described embodiment, the GaN substrate has high density defect regions arranged in a square lattice G.
Although the aN substrate 76 is used, the present invention is not limited to this. For example, as shown in FIG. 8B, a GaN substrate 92 in which high-density defect regions are arranged in a square lattice pattern, and also in FIG. 8C. As shown, a GaN substrate 94 having high density defect regions arranged in a rectangular lattice can be used. Furthermore,
As shown in FIGS. 9A and 9B, GaN substrates 96 and 98 in which high density defect regions are linearly arranged can be used. 8 and 9 show the positional relationship between the high-density defect region and the laser stripe. 8 and 9
90 is a laser stripe.
【００３４】[0034]
【発明の効果】第１の発明では、ｐ側電極及びｎ側電極
が、低密度欠陥領域上に形成されているので、高密度欠
陥領域を介して流れるリーク電流を大幅に低減させるこ
とができる。また、第２の発明では、ｐ側電極は高密度
欠陥領域上にも延在しているものの、絶縁膜によって高
密度欠陥領域から絶縁されているので、低密度欠陥領域
上にのみ形成されている第１の発明と同様にｐ側電極か
ら高密度欠陥領域に流れるリーク電流を発生させない。According to the first aspect of the invention, since the p-side electrode and the n-side electrode are formed on the low-density defect region, the leak current flowing through the high-density defect region can be greatly reduced. . Further, in the second invention, although the p-side electrode extends over the high-density defect region as well, since it is insulated from the high-density defect region by the insulating film, it is formed only on the low-density defect region. As in the first aspect, the leak current flowing from the p-side electrode to the high density defect region is not generated.
【図１】実施形態例１の窒化物系半導体レーザ素子の断
面図である。FIG. 1 is a sectional view of a nitride-based semiconductor laser device according to a first embodiment.
【図２】図２（ａ）及び（ｂ）は、それぞれ、積層構造
上のｐ側電極の配置、及び基板裏面のｎ側電極の配置を
示す平面図である。FIG. 2A and FIG. 2B are plan views showing the arrangement of p-side electrodes on the laminated structure and the arrangement of n-side electrodes on the back surface of the substrate, respectively.
【図３】実施形態例２の窒化物系半導体レーザ素子の断
面図である。FIG. 3 is a sectional view of a nitride-based semiconductor laser device according to a second embodiment.
【図４】図４（ａ）及び（ｂ）は、ＧａＮ基板の高密度
欠陥領域の六方格子状配置を示す平面図、及び断面図で
ある。4 (a) and 4 (b) are a plan view and a cross-sectional view showing a hexagonal lattice-like arrangement of high-density defect regions of a GaN substrate.
【図５】ＧａＮ基板上の積層構造への結晶欠陥の伝搬を
説明する断面図である。FIG. 5 is a cross-sectional view for explaining the propagation of crystal defects in a laminated structure on a GaN substrate.
【図６】図６（ａ）及び（ｂ）は、それぞれ、高密度欠
陥領域の正方形格子状の配列、及び長方形格子状の配列
を示す図である。FIGS. 6A and 6B are diagrams showing a square lattice-shaped array and a rectangular lattice-shaped array of high-density defect regions, respectively.
【図７】図７（ａ）及び（ｂ）は、それぞれ、点状の高
密度欠陥領域が断続して線状に配置された配列、高密度
欠陥領域が線状に連続して配列を示す図である。7A and 7B show an array in which dot-like high-density defect regions are intermittently arranged linearly and a high-density defect region is linearly continuous, respectively. It is a figure.
【図８】図８（ａ）から（ｃ）は、それぞれ、高密度欠
陥領域が、六方格子状配置、正方形格子状配置、及び長
方形格子状配置のＧａＮ基板でのＧａＮ系半導体レーザ
素子の区画を示す図である。8A to 8C are sectional views of a GaN-based semiconductor laser device in which the high-density defect regions are hexagonal lattice-shaped, square lattice-shaped, and rectangular lattice-shaped GaN substrates, respectively. FIG.
【図９】図９（ａ）及び（ｂ）は、それぞれ、高密度欠
陥領域が線状に配置されているＧａＮ基板でのＧａＮ系
半導体レーザ素子の区画を示す図である。9 (a) and 9 (b) are diagrams showing divisions of a GaN-based semiconductor laser device on a GaN substrate in which high-density defect regions are linearly arranged.
１０……実施形態例１の窒化物系半導体レーザ素子、１
２……ｎ型ＧａＮ基板、１２ａ……高密度欠陥領域、１
４……ｎ型ＡｌＧａＮクラッド層、１６……ｎ型ＧａＮ
第１光ガイド層、１８……ＩｎＧａＮ活性層、２０……
ｐ型ＩｎＧａＮ第２光ガイド層、２２……ｐ型ＡｌＧａ
Ｎクラッド層、２４……ｐ型ＧａＮコンタクト層、２８
……絶縁膜、３０……高密度欠陥領域、３２……ｐ側電
極、３４……ｎ側電極、４０……実施形態例２の窒化物
系半導体レーザ素子、４２……ｐ側電極、４４……ｎ側
電極、７６……ＧａＮ基板、７８……高密度欠陥領域、
８０……積層構造、８２……高密度欠陥領域、９０……
レーザストライプ、９２……高密度欠陥領域が長方形格
子状に配置されているＧａＮ基板、９４……高密度欠陥
領域が六方格子状に配置されているＧａＮ基板、９６、
９８……高密度欠陥領域が線状に配置されているＧａＮ
基板。10 ... Nitride-based semiconductor laser device according to the first embodiment, 1
2 ... n-type GaN substrate, 12a ... high-density defect region, 1
4 ... n-type AlGaN cladding layer, 16 ... n-type GaN
First optical guide layer, 18 ... InGaN active layer, 20 ...
p-type InGaN second optical guide layer, 22 ... p-type AlGa
N-clad layer, 24 ... P-type GaN contact layer, 28
...... Insulating film, 30 ...... High density defect region, 32 ...... P side electrode, 34 ...... N side electrode, 40 ...... Nitride semiconductor laser device of the second embodiment, 42 ...... P side electrode, 44 ... n-side electrode, 76 ... GaN substrate, 78 ... high-density defect region,
80 ... Laminated structure, 82 ... High-density defect region, 90 ...
Laser stripes, 92 ... GaN substrate having high-density defect regions arranged in a rectangular lattice pattern, 94 ... GaN substrate having high-density defect regions arranged in a hexagonal lattice pattern, 96,
98 ... GaN in which high-density defect regions are linearly arranged
substrate.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 元木 健作 大阪府大阪市中央区北浜四丁目５番33号 住友電気工業株式会社内 Ｆターム(参考） 5F041 AA21 CA04 CA34 CA40 CA65 CA83 CA92 CA93 CA98 5F073 AA13 AA45 AA61 CA07 CB02 CB22 DA05 DA30 DA35 EA29 ─────────────────────────────────────────────────── ─── Continued front page (72) Inventor Kensaku Motoki 4-53 Kitahama, Chuo-ku, Osaka City, Osaka Prefecture Sumitomo Electric Industries, Ltd. F-term (reference) 5F041 AA21 CA04 CA34 CA40 CA65 CA83 CA92 CA93 CA98 5F073 AA13 AA45 AA61 CA07 CB02 CB22 DA05 DA30 DA35 EA29
Claims (7)
が高い高密度欠陥領域が周期的な基板面上配列で基板を
貫通している半導体結晶基板上に、窒化物系化合物半導
体の積層構造を備える窒化物系化合物半導体発光素子で
あって、 積層構造を挟む１対の電極の一方の電極は基板裏面の低
密度欠陥領域上に設けられ、他方の電極は基板の低密度
欠陥領域上方の積層構造上に設けられ、かつ活性領域が
１対の電極で挟まれた積層構造内に形成されていること
を特徴とする窒化物系化合物半導体発光素子。1. A laminated structure of a nitride-based compound semiconductor on a semiconductor crystal substrate in which high density defect regions having a higher crystal defect density than surrounding low density defect regions penetrate the substrate in a periodic array on the substrate surface. A nitride-based compound semiconductor light-emitting device comprising: a pair of electrodes sandwiching a laminated structure, one electrode of which is provided on a low-density defect region on the back surface of the substrate, and the other electrode of which is located above the low-density defect region of the substrate. A nitride-based compound semiconductor light-emitting device, which is provided on a laminated structure and has an active region formed in a laminated structure sandwiched by a pair of electrodes.
設けられた電極層から高密度欠陥領域と接触しないよう
に一部を切り欠いてなる電極層として形成されているこ
とを特徴とする請求項１に記載の窒化物系化合物半導体
発光素子。2. One of the electrodes is formed as an electrode layer formed by cutting out a part of the electrode layer provided on almost the entire back surface of the substrate so as not to come into contact with the high-density defect region. The nitride-based compound semiconductor light emitting device according to claim 1.
が高い高密度欠陥領域が周期的な基板面上配列で基板を
貫通している半導体結晶基板上に、窒化物系化合物半導
体の積層構造を備える窒化物系化合物半導体発光素子で
あって、 基板の高密度欠陥領域間の低密度欠陥領域上の積層構造
は、上部がリッジストライプとしてに形成され、かつリ
ッジストライプの両脇が絶縁膜で被覆され、 積層構造を挟む１対の電極の一方の電極が基板の高密度
欠陥領域間の低密度欠陥領域上に設けられ、他方の電極
がリッジストライプ上に延在し、更にリッジストライプ
脇の絶縁膜を介して高密度欠陥領域上方の積層構造上に
延在していることを特徴とする窒化物系化合物半導体発
光素子。3. A laminated structure of a nitride-based compound semiconductor on a semiconductor crystal substrate in which high-density defect regions having a higher crystal defect density than surrounding low-density defect regions penetrate the substrate in a periodic array on the substrate surface. A nitride-based compound semiconductor light-emitting device comprising: a laminated structure on a low-density defect region between high-density defect regions of a substrate, wherein an upper portion is formed as a ridge stripe, and both sides of the ridge stripe are insulating films. One electrode of the pair of electrodes that are covered and sandwich the laminated structure is provided on the low density defect area between the high density defect areas of the substrate, and the other electrode extends on the ridge stripe, and further on the side of the ridge stripe. A nitride-based compound semiconductor light-emitting device, characterized in that the nitride-based compound semiconductor light-emitting device extends over the laminated structure above the high-density defect region via an insulating film.
板面上で周期的に点在していることを特徴とする請求項
１から３のいずれか１項に記載の窒化物系化合物半導体
発光素子。4. The nitride-based compound semiconductor according to claim 1, wherein the high-density defect regions are periodically scattered on the substrate surface of the semiconductor crystal substrate. Light emitting element.
板面上で正方形格子状、長方形格子状、及び六方格子状
のいずれかの配置で点在していることを特徴とする請求
項４に記載の窒化物系化合物半導体発光素子。5. The high-density defect regions are scattered on the substrate surface of the semiconductor crystal substrate in any one of a square lattice shape, a rectangular lattice shape, and a hexagonal lattice shape. The nitride-based compound semiconductor light-emitting device according to item 1.
板面上で相互に離隔して平行に、かつ周期的に配置され
た線状の高密度欠陥領域であることを特徴とする請求項
１から３のいずれか１項に記載の窒化物系化合物半導体
発光素子。6. The high-density defect region is a linear high-density defect region that is arranged in parallel and periodically while being spaced apart from each other on the substrate surface of the semiconductor crystal substrate. 4. The nitride-based compound semiconductor light emitting device according to any one of 1 to 3.
欠陥領域が相互に接して、又は断続して線状に配置され
てなる高密度欠陥領域、又は高密度欠陥領域が連続して
線状に延在してなる高密度欠陥領域であることを特徴と
する請求項６に記載の窒化物系化合物半導体発光素子。7. The linear high-density defect region is a high-density defect region in which dot-like high-density defect regions are arranged in contact with each other or intermittently, or a high-density defect region is continuous. The nitride-based compound semiconductor light-emitting device according to claim 6, which is a high-density defect region formed by linearly extending.
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