JP2008130832A - Semiconductor light-emitting element, and manufacturing method of semiconductor light-emitting device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting device and a manufacturing method of the semiconductor light-emitting device, wherein a light-emitting characteristic can be enhanced. <P>SOLUTION: A semiconductor laser 30 comprises: an n type clad layer 2 composed of AlGaN; an n type intermediate layer 3 composed of In<SB>s</SB>Ga<SB>1-s</SB>N (0≤s<1) and formed on the n type clad layer 2; an n type buffer layer 4 composed of In<SB>t</SB>Ga<SB>1-t</SB>N (0≤t<0.5) and formed on the n type intermediate layer 3; and a quantum well light-emitting layer 5 composed of InGaN and formed on the n type buffer layer 4. The quantum well light-emitting layer 5 has: a well layer composed of In<SB>u</SB>Ga<SB>1-u</SB>N (0<u<0.5) in which an In concentration is relatively high; and a barrier layer composed of In<SB>v</SB>Ga<SB>1-v</SB>N (0≤v<u) in which the In concentration is relatively low. The In concentration of the n type buffer layer 4 is higher than the In concentration of the n type intermediate layer 3 and the In concentration of a well layer 5b is higher than the In concentration of the n type buffer layer 4. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a semiconductor light emitting device and a method for manufacturing the semiconductor light emitting device, and more particularly to a semiconductor light emitting device including a quantum well light emitting layer made of InGaN and a method for manufacturing the semiconductor light emitting device.

A nitride semiconductor made of InGaN is well known as a material of a light emitting element that emits light in a wavelength region from an ultraviolet region to an infrared region. For example, Japanese Patent Laid-Open No. 8-228025 (Patent Document 1) discloses a configuration of a light emitting element using InGaN. The light emitting device of Patent Document 1 includes a substrate made of sapphire, a buffer layer made of GaN, an n-type contact layer made of GaN, a first cladding layer made of InGaN, and a second n-type cladding layer made of AlGaN. And an active layer made of InGaN, a first p-type cladding layer made of InGaN, a second p-type cladding layer made of AlGaN, and a p-type contact layer made of GaN. On the substrate, a buffer layer, an n-type contact layer, a second n-type cladding layer, a first n-type cladding layer, an active layer, a first p-type cladding layer, a second p-type cladding layer, and a p-type contact Each of the layers is formed in this order. Further, a negative electrode is formed in contact with the n-type contact layer, and a positive electrode is formed in contact with the p-type contact layer.
JP-A-8-228025

  However, the conventional semiconductor light emitting device has a problem that sufficient light emission characteristics cannot be obtained. Specifically, when the emission wavelength is changed from 450 nm to 400 nm in the light emitting element of Patent Document 1, there is a problem that the PL (Photoluminescence) intensity is greatly reduced.

  Accordingly, an object of the present invention is to provide a semiconductor light emitting device and a method for manufacturing the semiconductor light emitting device capable of improving the light emission characteristics.

A semiconductor light emitting device according to one aspect of the present invention includes a clad layer made of AlGaN of a first conductivity type, an intermediate layer made of In _s Ga _1-s N (0 ≦ s <1) formed on the clad layer, A buffer layer made of In _t Ga _1-t N (0 ≦ t <0.5) formed on the intermediate layer, and a quantum well light-emitting layer made of InGaN formed on the buffer layer. Quantum well active layer and the well layer In concentration is formed of relatively high _{In u Ga 1-u N (} 0 <u <0.5), low In concentration is relatively _{In v Ga 1-v N (} 0 ≦ v <u). The In concentration of the buffer layer is higher than the In concentration of the intermediate layer, and the In concentration of the well layer is higher than the In concentration of the buffer layer.

A semiconductor light emitting device according to another aspect of the present invention includes a clad layer made of AlGaN of the first conductivity type, an intermediate layer made of Al _s Ga _1-s N (0 ≦ s <1) formed on the clad layer, A buffer layer made of In _t Ga _1-t N (0 ≦ t <0.5) formed on the intermediate layer, and a quantum well light-emitting layer made of InGaN formed on the buffer layer. Quantum well active layer and the well layer In concentration is formed of relatively high _{In u Ga 1-u N (} 0 <u <0.5), low In concentration is relatively _{In v Ga 1-v N (} 0 ≦ v <u). The Al concentration in the cladding layer is higher than the Al concentration in the intermediate layer, and the In concentration in the well layer is higher than the In concentration in the buffer layer.

  The present inventors have found that the reason why sufficient light emission characteristics cannot be obtained in the conventional semiconductor light emitting device is the mismatch between the crystal lattice of the cladding layer and the crystal lattice of the quantum well light emitting layer and the mismatch of these crystal lattices. It was found that the defect was caused by the defect of the quantum well light emitting layer. Therefore, according to the semiconductor light emitting device according to one aspect and the other aspect of the present invention, the intermediate layer and the buffer layer are formed between the cladding layer and the quantum well light emitting layer, The lattice constant of the crystal is gradually increased. As a result, the mismatch between the crystal lattice of the cladding layer and the crystal lattice of the quantum well light emitting layer is alleviated, and the occurrence of defects in the quantum well light emitting layer is suppressed. As a result, the light emission characteristics can be improved.

Preferably, the semiconductor light emitting device of the present invention further includes a substrate made of Al _w Ga _1-w N (0 ≦ w ≦ 1). The clad layer is formed on one main surface of the substrate.

Al _w Ga _1-w N (0 ≦ w ≦ 1) is thermally stable and suitable as a substrate. Moreover, since Al _w Ga _1-w N (0 ≦ w ≦ 1) has conductivity, an electrode can be formed on the other main surface of the substrate. Thereby, the planar size of the semiconductor light emitting element can be reduced as compared with the case where the electrode is formed on one main surface side of the substrate. In addition, since it is not necessary to etch a layer formed on one main surface side of the substrate, the manufacturing process can be simplified as compared with the case where an electrode is formed on one main surface side of the substrate.

  In the semiconductor light emitting device of the present invention, preferably, the substrate has a low defect region having a relatively low defect density, and a defect concentration region having a relatively high defect density and distributed in a dotted or linear manner on one main surface, have.

  Thereby, a low defect area | region can be made into a light emission area | region, and the light emission characteristic of a semiconductor light-emitting device can further be improved.

  In the semiconductor light emitting device of the present invention, the cladding layer is preferably formed in contact with one main surface.

In the semiconductor light emitting device of the present invention, preferably, the buffer layer is made of In _t Ga _1-t N (0.02 ≦ t ≦ 0.5).

  In the semiconductor light emitting device of the present invention, the buffer layer preferably has a thickness of 80 nm or more and 140 nm or less.

Thereby, the light emission characteristics can be further improved.
In the semiconductor light emitting device of the present invention, preferably, the cladding layer is made of Al _x Ga ₁ -xN (0 <x ≦ 0.05).

  By setting the Al composition ratio x to 0.05 or less, the lattice constant between the crystal of the cladding layer and the crystal of the quantum well light emitting layer becomes close, and the light emission characteristics can be further improved.

A method for manufacturing a semiconductor light emitting device according to one aspect of the present invention includes the following steps. A clad layer made of AlGaN of the first conductivity type is formed. An intermediate layer made of In _s Ga _1-s N (0 ≦ s <1) is formed on the cladding layer. A buffer layer made of In _t Ga _1-t N (0 ≦ t <0.5) is formed on the intermediate layer. A quantum well light emitting layer made of InGaN is formed on the buffer layer. Step includes a step of forming a well layer made of In concentration is relatively high _{In u Ga 1-u N (} 0 <u <0.5), In concentration is relatively low to form a quantum well active layer Forming a barrier layer made of In _v Ga _1-v N (0 ≦ v <u). The In concentration of the buffer layer is higher than the In concentration of the intermediate layer, and the In concentration of the well layer is higher than the In concentration of the buffer layer.

A method for manufacturing a semiconductor light emitting device according to another aspect of the present invention includes the following steps. A clad layer made of AlGaN of the first conductivity type is formed. An intermediate layer made of Al _s Ga _1-s N (0 ≦ s <1) is formed on the cladding layer. A buffer layer made of In _t Ga _1-t N (0 ≦ t <0.5) is formed on the intermediate layer. A quantum well light emitting layer made of InGaN is formed on the buffer layer. Step includes a step of forming a well layer made of In concentration is relatively high _{In u Ga 1-u N (} 0 <u <0.5), In concentration is relatively low to form a quantum well active layer Forming a barrier layer made of In _v Ga _1-v N (0 ≦ v <u). The Al concentration in the cladding layer is higher than the Al concentration in the intermediate layer, and the In concentration in the well layer is higher than the In concentration in the buffer layer.

  According to the method for manufacturing a semiconductor light emitting device according to one aspect and another aspect of the present invention, an intermediate layer and a buffer layer are formed between the cladding layer and the quantum well light emitting layer, and the quantum well light emitting layer is formed from the cladding layer. The crystal lattice constant is gradually increased over time. As a result, the mismatch between the crystal lattice of the cladding layer and the crystal lattice of the quantum well light emitting layer is alleviated, and the occurrence of defects in the quantum well light emitting layer is suppressed. As a result, the light emission characteristics can be improved.

  Preferably, in the method for manufacturing a semiconductor light emitting device of the present invention, the clad layer is formed at a first temperature, the intermediate layer is formed at a second temperature that is lower than the first temperature, and the buffer layer is formed at the first temperature. It is formed at a third temperature which is a temperature of 2 or less.

  Since the melting point of the intermediate layer is lower than the melting point of the cladding layer, an intermediate layer having a desired composition can be obtained by forming the intermediate layer at a temperature lower than that of the cladding layer. In addition, since the melting point of the buffer layer is lower than the melting point of the intermediate layer, the crystal quality of the buffer layer can be improved by forming the buffer layer at a temperature lower than that of the intermediate layer.

  Preferably, in the method for manufacturing a semiconductor light emitting device of the present invention, the well layer is formed at a temperature equal to or lower than the temperature at which the buffer layer is formed, and the barrier layer is formed at a temperature equal to or higher than the temperature at which the buffer layer is formed.

  Since the melting point of the well layer is lower than the melting point of the buffer layer, the crystal quality of the well layer can be improved by forming the well layer at a temperature lower than that of the buffer layer. Further, since the melting point of the buffer layer is lower than the melting point of the barrier layer, the buffer layer having a desired composition can be obtained by forming the buffer layer at a temperature lower than that of the barrier layer.

  According to the semiconductor light emitting device and the method for manufacturing the semiconductor light emitting device of the present invention, the light emission characteristics can be improved.

Hereinafter, embodiments of the present invention will be described with reference to the drawings.
(Embodiment 1)
FIG. 1 is a cross-sectional view showing a configuration of a semiconductor laser according to Embodiment 1 of the present invention. Referring to FIG. 1, a semiconductor laser 30 as a semiconductor light emitting device in the present embodiment includes a substrate 1, an n-type cladding layer 2, an n-type intermediate layer 3, an n-type buffer layer 4, and quantum well light emission. A layer 5, a guide layer 6, a p-type electron blocking layer 7, a p-type cladding layer 8, a p-type contact layer 9, an insulating layer 10, and electrodes 11 and 12 are provided.

The substrate 1 is made of Al _w Ga _1-w N (0 ≦ w ≦ 1), for example, GaN. On the upper surface 1a of the substrate 1, an n-type cladding layer 2 is formed in contact with the upper surface 1a. The n-type cladding layer 2 is made of AlGaN, for example, Al _x Ga _1-x N (0 <x ≦ 0.05). On the n-type cladding layer 2, an n-type intermediate layer 3 made of In _s Ga _1-s N (0 ≦ s <1) is formed. An n-type buffer layer 4 is formed on the n-type intermediate layer 3. The n-type buffer layer 4 is made of, for example, In _t Ga _1-t N (0 ≦ t <0.5), and preferably made of In _t Ga _1-t N (0.02 ≦ t ≦ 0.5). ing. The film thickness of the n-type buffer layer 4 is, for example, not less than 80 nm and not more than 140 nm. A quantum well light emitting layer 5 is formed on the n-type buffer layer 4.

FIG. 2 is a diagram showing the distribution of In composition in the quantum well light-emitting layer. Referring to FIGS. 1 and 2, quantum well light-emitting layer 5 has a plurality of barrier layers 5a and well layers 5b. The barrier layers 5a and the well layers 5b are alternately formed in the stacking direction (vertical direction in FIG. 1). The well layer 5b is made from _{In u Ga 1-u N (} 0 <u <0.5), the barrier layer 5a is made from _{In v Ga 1-v N (} 0 ≦ v <u). The In concentration of the barrier layer 5a is lower than the In concentration of the well layer 5b. In FIG. 2, the In composition ratio of the barrier layer 5a is 1%, and the composition ratio of the well layer 5b is 8%. The carriers injected into the quantum well light emitting layer 5 are confined in the well layer 5b by the energy barrier in the barrier layer 5a.

  Referring to FIG. 1, the In concentration of n-type buffer layer 4 is higher than the In concentration of n-type intermediate layer 3, and the In concentration of well layer 5 b is higher than the In concentration of n-type buffer layer 4.

  A guide layer 6 made of, for example, undoped GaN is formed on the quantum well light-emitting layer 5, and a p-type electron block layer 7 made of, for example, AlGaN is formed on the guide layer 6. A p-type cladding layer 8 made of AlGaN is formed on the p-type electron blocking layer 7, and a p-type contact layer 9 made of GaN is formed on the p-type cladding layer 8. On the p-type contact layer 9, an insulating layer 10 having an opening 10a is formed. An electrode 12 is formed on the insulating layer 10 so as to fill the opening 10a. The electrode 12 is in direct contact with the insulating layer 10. An electrode 11 is formed on the lower surface 1 b of the substrate 1.

  In the semiconductor laser 30 of the present embodiment, when a predetermined potential is applied to the electrode 11 (n electrode) and the electrode 12 (p electrode), a voltage is generated between the electrode 11 and the electrode 12, and the n-type cladding layer Carriers are injected from each of the 2 and p-type cladding layers 8 into the quantum well light emitting layer 5. The injected carriers are recombined in the well layer 5b, and light is emitted. This light is emitted from the end face of the quantum well light emitting layer 5 in a direction perpendicular to the paper surface.

  Next, a method for manufacturing a semiconductor laser in the present embodiment will be described with reference to FIGS.

  First, referring to FIG. 3, on the upper surface 1a of the substrate 1, an n-type cladding layer 2, an n-type intermediate layer 3, an n-type buffer layer 4, a quantum well light emitting layer 5, a guide layer 6, The p-type electron block layer 7, the p-type cladding layer 8, and the p-type contact layer 9 are formed in this order. These layers are formed by using, for example, MOCVD (metal organic chemical vapor deposition).

  Here, the barrier layer 5a and the well layer 5b in the quantum well light-emitting layer 5 are formed by periodically changing the concentration of the gas containing In. Further, since InGaN is considered to be n-type even if it is made undoped, the n-type intermediate layer 3 and the n-type buffer layer 4 may be made of undoped InGaN.

  The n-type intermediate layer 3 is formed at a temperature (second temperature) equal to or lower than the temperature (first temperature) at which the n-type cladding layer 2 is formed, and the n-type buffer layer 4 is the n-type intermediate layer 3. Is formed at a temperature (third temperature) that is equal to or lower than the temperature at which the film is formed. Further, the well layer 5b is formed at a temperature lower than the temperature at which the n-type buffer layer 4 is formed, and the barrier layer 5a is formed at a temperature higher than the temperature at which the n-type buffer layer 4 is formed.

  Next, referring to FIG. 4, insulating layer 10 is formed on p-type contact layer 9. Subsequently, a resist (not shown) is formed on the insulating layer 10, and the insulating layer 10 is etched using the resist as a mask. As a result, an opening 10 a is formed at a predetermined position of the insulating layer 10.

  Next, referring to FIG. 5, an electrode 12 is formed on insulating layer 10 so as to fill opening 10a. Subsequently, an electrode 11 is formed on the lower surface 1 b of the substrate 1. Thereafter, the substrate 1 is diced along the line AA in the figure, and separated into individual semiconductor lasers. Through the above steps, the semiconductor laser 30 shown in FIG. 1 is obtained.

The semiconductor laser 30 in this embodiment includes an n-type cladding layer 2 made of AlGaN and an n _- type intermediate layer made of In _s Ga _1-s N (0 ≦ s <1) formed on the n-type cladding layer 2. 3, an n _- type buffer layer 4 made of In _t Ga _1-t N (0 ≦ t <0.5) formed on the n-type intermediate layer 3, and InGaN formed on the n-type buffer layer 4 The quantum well light emitting layer 5 is provided. And the well layer 5b made of the quantum well active layer 5 is the In concentration is relatively high _{In u Ga 1-u N (} 0 <u <0.5), In concentration is relatively low In _v Ga _1-v N And a barrier layer 5a made of (0 ≦ v <u). The In concentration of the n-type buffer layer 4 is higher than the In concentration of the n-type intermediate layer 3, and the In concentration of the well layer 5 b is higher than the In concentration of the n-type buffer layer 4.

The method for manufacturing the semiconductor laser 30 in the present embodiment includes the following steps. An n-type cladding layer 2 made of AlGaN is formed. An n-type intermediate layer 3 made of In _s Ga _1-s N (0 ≦ s <1) is formed on the n-type cladding layer 2. An n-type buffer layer 4 made of In _t Ga _1-t N (0 ≦ t <0.5) is formed on the n-type intermediate layer 3. A quantum well light emitting layer 5 made of InGaN is formed on the n-type buffer layer 4. Forming a quantum well active layer 5 step includes a step In concentration is to form a relatively high In _u Ga _1-u N well layer 5b made of (0 <u <0.5), In concentration relative And a step of forming a barrier layer 5a made of low In _v Ga _{1 -v} N (0 ≦ v <u). The In concentration of the n-type buffer layer 4 is higher than the In concentration of the n-type intermediate layer 3, and the In concentration of the well layer 5 b is higher than the In concentration of the n-type buffer layer 4.

  The lattice constant of the AlGaN crystal increases as the Al content decreases, and the lattice constant of the InGaN crystal increases as the In content increases. According to the semiconductor laser 30 and the manufacturing method thereof in the present embodiment, the n-type intermediate layer 3 and the n-type buffer layer 4 are formed between the n-type cladding layer 2 and the quantum well light-emitting layer 5, and the n-type From the clad layer 2 to the quantum well light-emitting layer 5, the Al content gradually decreases and the In content increases. As a result, the lattice constant of the crystal gradually increases from the n-type cladding layer 2 to the quantum well light-emitting layer 5, so that the mismatch between the crystal lattice of the n-type cladding layer 2 and the crystal lattice of the quantum well light-emitting layer 5 is alleviated. The generation of defects in the quantum well light emitting layer is suppressed. As a result, the light emission characteristics can be improved.

The semiconductor laser 30 further includes a substrate 1 made of Al _w Ga _1-w N (0 ≦ w ≦ 1), and the n-type cladding layer 2 is formed on the upper surface 1 a of the substrate 1. Al _w Ga _1-w N (0 ≦ w ≦ 1) is thermally stable and suitable as a substrate. Further, since Al _w Ga _1-w N (0 ≦ w ≦ 1) has conductivity, the electrode 11 can be formed on the lower surface 1 b of the substrate 1. Thereby, the planar size of the semiconductor laser 30 can be reduced as compared with the case where the electrode is formed on the upper surface 1 a side of the substrate 1. In addition, since it is not necessary to etch the layer formed on the upper surface 1a side of the substrate 1, the manufacturing process can be simplified as compared with the case where an electrode is formed on the upper surface 1a side of the substrate 1.

In addition, since the n-type cladding layer 2 is made of Al _x Ga _1-x N (0 <x ≦ 0.05), the lattice of the crystal lattice of the n-type cladding layer 2 and the crystal lattice of the quantum well light-emitting layer 5 The constant becomes close, and the light emission characteristics can be further improved.

  In the manufacturing method, the n-type cladding layer 2 is formed at the first temperature, and the n-type intermediate layer 3 is formed at the second temperature that is lower than the first temperature, and the n-type buffer layer. 4 is formed at a third temperature which is lower than the second temperature. Further, in the above manufacturing method, the well layer 5b is formed at a temperature lower than the temperature at which the n-type buffer layer 4 is formed, and the barrier layer 5a is formed at a temperature higher than the temperature at which the n-type buffer layer 4 is formed. The

  The higher the In content, the lower the melting point of the layer, and the higher the Al content, the higher the melting point of the layer. By setting the formation temperature of each layer as described above, the crystal quality of each layer can be improved. .

(Embodiment 2)
Referring to FIG. 1, the semiconductor laser 30 of the present embodiment is different from the semiconductor laser of the first embodiment in the material of the n-type intermediate layer. The n-type intermediate layer 3 in the present embodiment is made of Al _s Ga _1-s N (0 ≦ s <1). The Al concentration of the n-type cladding layer 2 is higher than the Al concentration of the n-type intermediate layer, and the In concentration of the well layer 5 b is higher than the In concentration of the n-type buffer layer 4.

  Since the other configuration, operation, and manufacturing method of the semiconductor laser 30 are substantially the same as the configuration and operation of the semiconductor laser according to the first embodiment, the same members are denoted by the same reference numerals, and the description thereof is omitted. Will not repeat.

The semiconductor laser 30 in this embodiment includes an n-type cladding layer 2 made of AlGaN and an n _- type intermediate layer made of Al _s Ga _1-s N (0 ≦ s <1) formed on the n-type cladding layer 2. 3, an n _- type buffer layer 4 made of In _t Ga _1-t N (0 ≦ t <0.5) formed on the n-type intermediate layer 3, and InGaN formed on the n-type buffer layer 4 The quantum well light emitting layer 5 is provided. And the well layer 5b made of the quantum well active layer 5 is the In concentration is relatively high _{In u Ga 1-u N (} 0 <u <0.5), In concentration is relatively low In _v Ga _1-v N And a barrier layer 5a made of (0 ≦ v <u). The Al concentration of the n-type cladding layer 2 is higher than the Al concentration of the n-type intermediate layer 3, and the In concentration of the well layer 5 b is higher than the In concentration of the n-type buffer layer 4.

The method for manufacturing the semiconductor laser 30 in the present embodiment includes the following steps. An n-type cladding layer 2 made of AlGaN is formed. An n-type intermediate layer 3 made of Al _s Ga _1-s N (0 ≦ s <1) is formed on the n-type cladding layer 2. An n-type buffer layer 4 made of In _t Ga _1-t N (0 ≦ t <0.5) is formed on the n-type intermediate layer 3. A quantum well light emitting layer 5 made of InGaN is formed on the n-type buffer layer 4. Forming a quantum well active layer 5 step includes a step In concentration is to form a relatively high In _u Ga _1-u N well layer 5b made of (0 <u <0.5), In concentration relative And a step of forming a barrier layer 5a made of low In _v Ga _{1 -v} N (0 ≦ v <u). The Al concentration of the n-type cladding layer 2 is higher than the Al concentration of the n-type intermediate layer 3, and the In concentration of the well layer 5 b is higher than the In concentration of the n-type buffer layer 4.

  According to the semiconductor laser 30 and the manufacturing method thereof in the present embodiment, the lattice constant of the crystal gradually increases from the n-type cladding layer 2 to the quantum well light-emitting layer 5, so that the crystal lattice and quantum well of the n-type cladding layer 2 are increased. The mismatch with the crystal lattice of the light emitting layer 5 is relaxed, and the occurrence of defects in the quantum well light emitting layer 5 is suppressed. As a result, the light emission characteristics can be improved.

(Embodiment 3)
FIG. 6 is a cross-sectional view showing the configuration of the light-emitting diode according to Embodiment 3 of the present invention. Referring to FIG. 6, light emitting diode 31 as the semiconductor light emitting element of the present embodiment is different from the semiconductor laser of the first embodiment in the following points. The substrate 1 is made of an insulating material such as sapphire, and an n-type contact layer 21 made of GaN is formed between the substrate 1 and the n-type cladding layer 2. The guide layer 6 and the p-type cladding layer 8 are not formed, and the quantum well light-emitting layer 5 and the p-type electron block layer 7, and the p-type electron block layer 7 and the p-type contact layer 9 are in contact with each other. Has been. A part of each of the n-type cladding layer 2, the n-type intermediate layer 3, the n-type buffer layer 4, the quantum well light emitting layer 5, the p-type electron blocking layer 7 and the p-type contact layer 9 is removed, thereby A groove 21 a reaching the n-type contact layer 21 is formed. In the groove 21 a, the electrode 11 is formed adjacent to the n-type contact layer 21. As a result, the electrode 11 is electrically connected to the substrate 1 via the n-type contact layer 21. An insulating layer is not formed on the p-type contact layer 9, and the electrode 12 is formed adjacent to the p-type contact layer 9.

  Since the configuration of other light emitting diodes 31 is substantially the same as the configuration of the semiconductor laser of the first embodiment, the same members are denoted by the same reference numerals, and description thereof will not be repeated.

  Then, the manufacturing method of the light emitting diode in this Embodiment is demonstrated using FIGS.

  First, referring to FIG. 7, an n-type contact layer 21, an n-type cladding layer 2, an n-type intermediate layer 3, an n-type buffer layer 4, and a quantum well light-emitting layer 5 are formed on the upper surface 1 a of the substrate 1. The p-type electron block layer 7 and the p-type contact layer 9 are formed in this order. These layers are formed by using, for example, MOCVD (metal organic chemical vapor deposition). The barrier layer 5a and the well layer 5b in the quantum well light emitting layer 5 are formed by periodically changing the concentration of a gas containing In.

  When the substrate 1 made of sapphire is used, a buffer layer (not shown) may be formed between the substrate 1 and the n-type cladding layer 2.

  Next, referring to FIG. 8, electrode 12 is formed on p-type contact layer 9, and resist 25 having a predetermined shape is formed on electrode 12. Next, using the resist 25 as a mask, each of the p-type contact layer 9, the p-type electron blocking layer 7, the quantum well light emitting layer 5, the n-type buffer layer 4, the n-type intermediate layer 3, and the n-type cladding layer 2. Etch the part. As a result, a groove 21 a is formed in the n-type contact layer 21. Thereafter, the resist 25 is removed.

  Next, referring to FIG. 9, electrode 11 is formed on n-type contact layer 21 at the bottom of groove 21a. Thereafter, the substrate 1 and the n-type contact layer 21 are diced along the line BB in the figure, and separated into individual light emitting diodes. Through the above steps, the light emitting diode 31 shown in FIG. 6 is obtained.

  In the present embodiment, since the substrate 1 is an insulating substrate, an electrode cannot be formed on the lower surface of the substrate 1. For this reason, the electrode 11 is provided on the upper surface 1 a of the substrate 1. As a result, according to the light emitting diode 31 and the manufacturing method thereof in the present embodiment, the same effects as those of the semiconductor laser of the first embodiment and the manufacturing method thereof can be obtained.

(Embodiment 4)
FIG. 10 is a diagram schematically showing a substrate used in the semiconductor laser according to the fourth embodiment of the present invention. (A) is a perspective view, (b) is sectional drawing which follows the XB-XB line | wire of (a). Referring to FIGS. 10A and 10B, substrate 1 in the present embodiment has low defect region 50 and defect concentration region 51 which is a region having a higher defect density than low defect region 50. is doing. The defect concentration regions 51 are distributed in the form of dots on the upper surface 1a of the substrate 1 and penetrate the substrate 1 in the thickness direction (vertical direction in FIG. 10B).

  10A and 10B, the boundary line between the low defect region 50 and the defect concentration region 51 is shown by a solid line, but the boundary between the low defect region 50 and the defect concentration region 51 is Actually there is no such line.

  The substrate 1 in the present embodiment is one in which defects in other regions are reduced by concentrating defects in a certain region during manufacturing. Since the semiconductor laser 30 includes such a substrate 1, the low defect region 50 can be used as a light emitting region, and the light emission characteristics of the semiconductor laser can be further improved.

  As the substrate in the present embodiment, the defect concentration region 51 is linearly formed on the upper surface 1a as shown in FIG. 11 in addition to the case where the defect concentration region 51 is distributed in a dot shape as shown in FIG. It may be distributed.

  In this example, the light emission characteristics of the semiconductor laser of Invention Example 1 and the semiconductor laser of Comparative Example 1 were examined. The semiconductor laser of Example 1 of the present invention was manufactured by the following manufacturing method.

Invention Example 1: A semiconductor laser was manufactured according to the manufacturing method shown in the first embodiment. First, an n-type GaN (0001) substrate having a low defect region having a threading dislocation density of less than 1 × 10 ⁶ cm ⁻² and a defect concentration region distributed linearly is prepared and formed on a susceptor in a film forming apparatus. Arranged. Subsequently, ammonia and hydrogen were introduced while controlling the internal pressure of the apparatus at 30 kPa, and cleaning was performed for 10 minutes while the substrate was heated to 1050 ° C. Subsequently, the substrate temperature was raised to 1100 ° C., and trimethylgallium, trimethylaluminum, ammonia, and monosilane were introduced into the apparatus mainly using hydrogen as a carrier gas. Thereby, an n-type AlGaN cladding layer (Al composition 3%) having a thickness of 2 μm was grown. Next, with the substrate temperature kept at 1100 ° C., the carrier gas was mainly hydrogen, and trimethylgallium and ammonia were introduced into the apparatus to grow a 3 nm thick non-doped GaN intermediate layer. Subsequently, the layer growth was temporarily stopped, the substrate temperature was lowered to 800 ° C., and trimethylgallium, trimethylindium, ammonia, and monosilane were introduced into the apparatus mainly using nitrogen as a carrier gas. As a result, a Si-doped InGaN buffer layer (In composition 4%) having a thickness of 50 nm was grown. Next, the layer growth was temporarily stopped, the substrate temperature was raised to 880 ° C., and trimethylgallium, trimethylindium and ammonia were introduced into the apparatus mainly using nitrogen as a carrier gas. As a result, a non-doped InGaN barrier layer (In composition 1%) having a thickness of 15 nm was grown. Thereafter, the substrate temperature was lowered to 800 ° C., and trimethylgallium, trimethylindium, and ammonia were introduced into the apparatus mainly using nitrogen as a carrier gas. Thereby, a 3 nm-thick non-doped InGaN well layer (In composition 8%) was grown. By repeating the step of forming the non-doped InGaN barrier layer and the step of forming the non-doped InGaN well layer, a three-period quantum well light-emitting layer was formed.

  Next, the layer growth was temporarily interrupted, the substrate temperature was raised to 1050 ° C., and then trimethylgallium and ammonia were introduced into the apparatus mainly using hydrogen as a carrier gas. Thereby, a non-doped GaN guide layer having a thickness of 100 nm was grown. Subsequently, trimethylgallium, trimethylaluminum, ammonia, and cyclopentadienylmagnesium were introduced into the apparatus mainly using hydrogen as a carrier gas. As a result, a 20-nm-thick p-type AlGaN electron blocking layer (Al composition 18%) was grown. Thereafter, trimethylgallium, trimethylaluminum, ammonia, and cyclopentadienylmagnesium were introduced into the apparatus mainly using hydrogen as a carrier gas. As a result, a p-type AlGaN cladding layer (Al composition 7%) having a thickness of 150 nm was grown. Next, trimethylgallium, ammonia, and cyclopentadienylmagnesium were introduced into the apparatus mainly using hydrogen as a carrier gas. As a result, a p-type GaN contact layer having a thickness of 50 nm was grown.

  Thereafter, the substrate was taken out from the film forming apparatus, and an insulating film was formed on the p-type GaN contact layer. Subsequently, an opening having a width of 5 μm was opened in the insulating film by etching to form a p-electrode made of Ni / Au. Next, after reducing the thickness of the GaN substrate, an n-type electrode was formed on the lower surface of the substrate. Thereafter, dicing into a bar having a length of 800 μm was performed to form an end face mirror. The semiconductor laser (blue-violet light emitting element) of FIG. 1 was obtained by the above method.

The semiconductor laser of Comparative Example 1 was manufactured by the following manufacturing method.
Comparative Example 1: In the manufacturing method of Invention Example 1, a quantum well light emitting layer was formed directly on the n-type AlGaN cladding layer without forming the non-doped GaN intermediate layer and the Si-doped InGaN buffer layer. Except for this, a semiconductor laser (blue-violet light-emitting element) was manufactured using the same manufacturing method as Example 1 of the present invention.

  When a pulse current was applied at room temperature to each of the semiconductor laser of Example 1 of the present invention and the semiconductor laser of Comparative Example 1 thus obtained, laser oscillation was observed. The slope efficiency was 1.0 W / A in Invention Example 1 and 0.6 W / A in Comparative Example 1. From this result, it can be seen that the light emission characteristics can be improved according to the present invention.

  In this example, the light emission characteristics of the light emitting diode of Example 2 of the present invention and the light emitting diode of Comparative Example 2 were examined. The light emitting diode of Example 2 of the present invention was manufactured by the following manufacturing method.

  Invention Example 2: A light emitting diode was manufactured according to the manufacturing method shown in the third embodiment. First, a c-plane sapphire substrate was prepared and placed on a susceptor in a film forming apparatus. Subsequently, cleaning was performed for 10 minutes while the substrate was heated to 1100 ° C. while introducing hydrogen into the apparatus. Subsequently, the substrate temperature was lowered to 500 ° C., and trimethylgallium and ammonia were introduced into the apparatus mainly using hydrogen as a carrier gas. Thereby, a low-temperature buffer layer was grown. Subsequently, the layer growth was temporarily stopped, the substrate temperature was raised to 1100 ° C., and trimethylgallium, ammonia, and monosilane were introduced mainly using hydrogen as a carrier gas. Thereby, an n-type GaN contact layer having a thickness of 5 μm was grown. Next, trimethylgallium, trimethylaluminum, ammonia, and monosilane were introduced into the apparatus mainly using hydrogen as a carrier gas. Thereby, an n-type AlGaN cladding layer (Al composition 7%) having a thickness of 600 nm was grown. Next, with the substrate temperature kept at 1100 ° C., trimethylgallium and ammonia were introduced into the apparatus using mainly the carrier gas as hydrogen. Thereby, a non-doped GaN intermediate layer having a thickness of 3 nm was grown. Subsequently, the layer growth was temporarily stopped, the substrate temperature was lowered to 800 ° C., and trimethylgallium, trimethylindium, ammonia, and monosilane were introduced into the apparatus mainly using nitrogen as a carrier gas. As a result, a Si-doped InGaN buffer layer (In composition 4%) having a thickness of 50 nm was grown. Thereafter, the layer growth was interrupted, the substrate temperature was raised to 880 ° C., and trimethylgallium, trimethylindium, and ammonia were introduced into the apparatus mainly using nitrogen as a carrier gas. As a result, a non-doped InGaN barrier layer (In composition 1%) having a thickness of 15 nm was grown. Thereafter, the substrate temperature was lowered to 800 ° C., and trimethylgallium, trimethylindium, and ammonia were introduced into the apparatus mainly using nitrogen as a carrier gas. Thereby, a 3 nm-thick non-doped InGaN well layer (In composition 8%) was grown. By repeating the step of forming the non-doped InGaN barrier layer and the step of forming the non-doped InGaN well layer, a three-period quantum well light-emitting layer was formed.

  Next, the layer growth was temporarily interrupted, the substrate temperature was raised to 1050 ° C., and trimethylgallium, trimethylaluminum, ammonia, and cyclopentadienylmagnesium were introduced into the apparatus mainly using hydrogen as a carrier gas. As a result, a 20-nm-thick p-type AlGaN electron blocking layer (Al composition 18%) was grown. Subsequently, trimethyl gallium, ammonia, and cyclopentadienyl magnesium were introduced into the apparatus mainly using hydrogen as a carrier gas. As a result, a p-type GaN contact layer having a thickness of 50 nm was grown.

  Thereafter, the substrate was taken out from the film forming apparatus, and a 400 μm square translucent p-electrode made of Ni / Au was formed on the p-type GaN contact layer. Subsequently, a part of each of the p-type GaN contact layer, the p-type AlGaN electron blocking layer, the quantum well light emitting layer, the Si-doped InGaN buffer layer, the non-doped GaN intermediate layer, and the n-type AlGaN cladding layer is etched by reactive ion etching. did. Thereby, a part of the n-type GaN contact layer was exposed. Then, an n electrode was formed on the exposed n-type GaN contact layer. Thereafter, dicing was performed to 500 μm square. The light emitting diode (blue-violet light emitting element) of FIG. 6 was obtained by the above method.

  Comparative Example 2: In the manufacturing method of Invention Example 2, a quantum well light emitting layer was formed directly on the n-type AlGaN cladding layer without forming the non-doped GaN intermediate layer and the Si-doped InGaN buffer layer. Other than this, a light emitting diode (blue-violet light emitting element) was manufactured by using the same manufacturing method as in Invention Example 2.

  When a pulse current was applied to each of the light-emitting diode of Example 2 of the present invention and the light-emitting diode of Comparative Example 2 thus obtained, light emission was observed. In particular, in Example 2 of the present invention, a spectrum as shown in FIG. 12 was obtained. FIG. 13 is a diagram showing the relationship between the current value and the optical output obtained in Example 2 of the present invention. In FIG. 13, a line indicated by C is a line obtained in Example 2 of the present invention, and a line indicated by D is a line obtained in Comparative Example 2. Referring to FIG. 13, it can be seen that the light output is improved in Example 2 of the present invention compared to Comparative Example 2. Specifically, when a current of 20 mA is applied, the light output of light with a wavelength of 405 nm was 0.3 mW in Comparative Example 2, whereas the light output of light with a wavelength of 405 nm was 3 mW in Comparative Example 2. Met. When a current of 200 mA was applied, the light output of light with a wavelength of 405 nm was 22 mW in Comparative Example 2, whereas the light output of light with a wavelength of 405 nm was 30 mW in Comparative Example 2. Furthermore, when the light emitting diode of Invention Example 2 was molded with an epoxy resin to produce a lamp, when a current of 20 mA was applied, the light output of light having a wavelength of 405 nm was 15 mW. From this result, it can be seen that the light emission characteristics can be improved according to the present invention.

  In this example, the optimum range of the In composition in the n-type buffer layer was examined. Specifically, the In composition of the Si-doped InGaN buffer layer was changed according to the sample by the following manufacturing method. First, a c-plane sapphire substrate was prepared and placed on a susceptor in a film forming apparatus. Subsequently, cleaning was performed for 10 minutes while the substrate was heated to 1100 ° C. while introducing hydrogen into the apparatus. Subsequently, the substrate temperature was lowered to 500 ° C., and trimethylgallium and ammonia were introduced into the apparatus mainly using hydrogen as a carrier gas. Thereby, a low-temperature buffer layer was grown. Subsequently, the layer growth was temporarily stopped, the substrate temperature was raised to 1100 ° C., and trimethylgallium, ammonia, and monosilane were introduced mainly using hydrogen as a carrier gas. Thereby, an n-type GaN contact layer having a thickness of 3 μm was grown. Next, trimethylgallium, trimethylaluminum, ammonia, and monosilane were introduced into the apparatus mainly using hydrogen as a carrier gas. Thereby, an n-type AlGaN cladding layer (Al composition 7%) having a thickness of 2 μm was grown. Next, with the substrate temperature kept at 1100 ° C., trimethylgallium and ammonia were introduced into the apparatus using mainly the carrier gas as hydrogen. Thereby, a non-doped GaN intermediate layer having a thickness of 3 nm was grown. Subsequently, the layer growth was temporarily stopped, the substrate temperature was lowered to 800 ° C., and trimethylgallium, trimethylindium, ammonia, and monosilane were introduced into the apparatus mainly using nitrogen as a carrier gas. Thereby, a Si-doped InGaN buffer layer having a thickness of 50 nm was grown. Thereafter, the layer growth was interrupted, the substrate temperature was raised to 880 ° C., and trimethylgallium, trimethylindium, and ammonia were introduced into the apparatus mainly using nitrogen as a carrier gas. As a result, a non-doped InGaN barrier layer (In composition 1%) having a thickness of 15 nm was grown. Thereafter, the substrate temperature was lowered to 800 ° C., and trimethylgallium, trimethylindium, and ammonia were introduced into the apparatus mainly using nitrogen as a carrier gas. Thereby, a 3 nm-thick non-doped InGaN well layer (In composition 8%) was grown. By repeating the step of forming the non-doped InGaN barrier layer and the step of forming the non-doped InGaN well layer, a three-period quantum well light-emitting layer was formed.

  Next, the layer growth was temporarily interrupted, the substrate temperature was raised to 1050 ° C., and then trimethylgallium and ammonia were introduced into the apparatus mainly using hydrogen as a carrier gas. Thereby, a non-doped GaN cap layer having a thickness of 10 nm was grown. Thereafter, ammonia and hydrogen were introduced into the apparatus and held for 90 seconds, and the substrate was taken out from the film forming apparatus.

  The quantum well structure thus obtained was irradiated with a He—Cd laser having a wavelength of 325 nm, and the PL intensity from the quantum well structure was observed. FIG. 14 is a diagram showing the relationship between the In composition of the n-type buffer layer and the PL intensity in Example 3 of the present invention. Referring to FIG. 14, it can be seen that when the In composition in the n-type buffer layer is 0.02 or more, the PL intensity is dramatically improved. On the other hand, when the IN composition is 0.5 or less, the quality of InGaN crystals can be improved. As described above, the In composition in the n-type buffer layer is desirably 0.02 or more and 0.5 or less.

  In this example, the optimum range of the film thickness of the n-type buffer layer was examined. Specifically, a quantum well structure was manufactured using a manufacturing method almost the same as in Example 3. However, the Si-doped InGaN buffer layer was formed with an In composition of 4% and a film thickness varied depending on the sample.

  With respect to the quantum well structure thus obtained, the intensity of PL was measured by the same method as in Example 3. FIG. 15 is a diagram showing the relationship between the film thickness of the n-type buffer layer and the PL intensity in Example 4 of the present invention. Referring to FIG. 15, it can be seen that when the film thickness of the n-type buffer layer is not less than 80 nm and not more than 140 nm, the PL intensity is dramatically improved. As described above, the film thickness of the n-type buffer layer is desirably 80 nm or more and 140 nm or less.

  It should be understood that the embodiments and examples disclosed herein are illustrative and non-restrictive in every respect. The scope of the present invention is defined by the terms of the claims, rather than the description above, and is intended to include any modifications within the scope and meaning equivalent to the terms of the claims.

It is sectional drawing which shows the structure of the semiconductor light-emitting device in Embodiment 1 of this invention. It is a figure which shows distribution of In composition in a quantum well light emitting layer. It is sectional drawing which shows the 1st process of the manufacturing method of the semiconductor laser in Embodiment 1 of this invention. It is sectional drawing which shows the 2nd process of the manufacturing method of the semiconductor laser in Embodiment 1 of this invention. It is sectional drawing which shows the 3rd process of the manufacturing method of the semiconductor laser in Embodiment 1 of this invention. It is sectional drawing which shows the structure of the light emitting diode in Embodiment 3 of this invention. It is sectional drawing which shows the 1st process of the manufacturing method of the light emitting diode in Embodiment 3 of this invention. It is sectional drawing which shows the 2nd process of the manufacturing method of the light emitting diode in Embodiment 3 of this invention. It is sectional drawing which shows the 3rd process of the manufacturing method of the light emitting diode in Embodiment 3 of this invention. (A) is the perspective view which showed typically the board | substrate used for the semiconductor laser in Embodiment 4 of this invention, (b) is the board | substrate used for the semiconductor laser in Embodiment 4 of this invention. It is sectional drawing shown typically. It is the perspective view which showed typically the other example of the board | substrate used for the semiconductor laser in Embodiment 4 of this invention. In Example 2 of this invention, it is a figure which shows the spectrum acquired by this invention example 2. FIG. It is a figure which shows the relationship between the electric current value obtained in Example 2 of this invention, and optical output. It is a figure which shows the relationship between In composition and PL intensity | strength of the n-type buffer layer in Example 3 of this invention. It is a figure which shows the relationship between the film thickness of n-type buffer layer in Example 4 of this invention, and PL intensity | strength.

Explanation of symbols

  1 substrate, 1a substrate upper surface, 1b substrate lower surface, 2 n-type cladding layer, 3 n-type intermediate layer, 4 n-type buffer layer, 5 quantum well light emitting layer, 5a barrier layer, 5b well layer, 6 guide layer, 7 p-type Electron blocking layer, 8 p-type cladding layer, 9 p-type contact layer, 10 insulating layer, 10a opening, 11, 12 electrode, 21 n-type contact layer, 21a groove, 25 resist, 30 semiconductor laser, 31 light emitting diode, 50 Low defect area, 51 defect concentration area.

Claims (12)

A cladding layer made of AlGaN of the first conductivity type;
An intermediate layer made of In _s Ga _1-s N (0 ≦ s <1) formed on the cladding layer;
A buffer layer made of In _t Ga _1-t N (0 ≦ t <0.5) formed on the intermediate layer;
A quantum well light emitting layer made of InGaN formed on the buffer layer;
The quantum well active layer and the well layer In concentration is formed of relatively high _{In u Ga 1-u N (} 0 <u <0.5), low In concentration is relatively In _v Ga _1-v N ( A barrier layer of 0 ≦ v <u),
The semiconductor light emitting device according to claim 1, wherein the In concentration of the buffer layer is higher than the In concentration of the intermediate layer, and the In concentration of the well layer is higher than the In concentration of the buffer layer. A cladding layer made of AlGaN of the first conductivity type;
An intermediate layer made of Al _s Ga _1-s N (0 ≦ s <1) formed on the cladding layer;
A buffer layer made of In _t Ga _1-t N (0 ≦ t <0.5) formed on the intermediate layer;
A quantum well light emitting layer made of InGaN formed on the buffer layer;
The quantum well active layer and the well layer In concentration is formed of relatively high _{In u Ga 1-u N (} 0 <u <0.5), low In concentration is relatively In _v Ga _1-v N ( A barrier layer of 0 ≦ v <u),
The semiconductor light emitting device according to claim 1, wherein an Al concentration of the cladding layer is higher than an Al concentration of the intermediate layer, and an In concentration of the well layer is higher than an In concentration of the buffer layer. A substrate made of Al _w Ga _1-w N (0 ≦ w ≦ 1),
The semiconductor light emitting element according to claim 1, wherein the clad layer is formed on one main surface of the substrate.   The substrate has a low defect area having a relatively low defect density, and a defect concentration area having a relatively high defect density and distributed in a dotted or linear manner on the one main surface, The semiconductor light-emitting device according to claim 3.   The semiconductor light emitting element according to claim 3, wherein the clad layer is formed in contact with the one main surface. The semiconductor light emitting element according to claim 1, wherein the buffer layer is made of In _t Ga _1-t N (0.02 ≦ t ≦ 0.5). The semiconductor light emitting device according to claim 1, wherein the cladding layer is made of Al _x Ga _1-x N (0 <x ≦ 0.05).   The semiconductor light emitting element according to claim 1, wherein the buffer layer has a thickness of 80 nm to 140 nm. Forming a clad layer made of AlGaN of the first conductivity type;
Forming an intermediate layer made of In _s Ga _1-s N (0 ≦ s <1) on the cladding layer;
Forming a buffer layer made of In _t Ga _1-t N (0 ≦ t <0.5) on the intermediate layer;
Forming a quantum well light emitting layer made of InGaN on the buffer layer,
The step of forming the quantum well active layer includes forming a well layer made of In concentration is relatively high _{In u Ga 1-u N (} 0 <u <0.5), In concentration is relatively Forming a barrier layer made of low In _v Ga _1-v N (0 ≦ v <u),
The method of manufacturing a semiconductor light emitting device, wherein an In concentration of the buffer layer is higher than an In concentration of the intermediate layer, and an In concentration of the well layer is higher than an In concentration of the buffer layer. Forming a clad layer made of AlGaN of the first conductivity type;
Forming an intermediate layer made of Al _s Ga _1-s N (0 ≦ s <1) on the cladding layer;
Forming a buffer layer made of In _t Ga _1-t N (0 ≦ t <0.5) on the intermediate layer;
Forming a quantum well light emitting layer made of InGaN on the buffer layer,
The step of forming the quantum well active layer includes forming a well layer made of In concentration is relatively high _{In u Ga 1-u N (} 0 <u <0.5), In concentration is relatively Forming a barrier layer made of low In _v Ga _1-v N (0 ≦ v <u),
The method for manufacturing a semiconductor light emitting device, wherein the Al concentration in the cladding layer is higher than the Al concentration in the intermediate layer, and the In concentration in the well layer is higher than the In concentration in the buffer layer.   The well layer is formed at a temperature equal to or lower than a temperature at which the buffer layer is formed, and the barrier layer is formed at a temperature equal to or higher than a temperature at which the buffer layer is formed. 10. A method for producing a semiconductor light emitting device according to 10.   The cladding layer is formed at a first temperature, and the intermediate layer is formed at a second temperature that is lower than the first temperature, and the buffer layer is at a temperature lower than the second temperature. The method of manufacturing a semiconductor light emitting element according to claim 9, wherein the semiconductor light emitting element is formed at a temperature of 3.

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