JP2003229638A - 窒化物系化合物半導体発光素子 - Google Patents
窒化物系化合物半導体発光素子Info
- Publication number
- JP2003229638A JP2003229638A JP2002027981A JP2002027981A JP2003229638A JP 2003229638 A JP2003229638 A JP 2003229638A JP 2002027981 A JP2002027981 A JP 2002027981A JP 2002027981 A JP2002027981 A JP 2002027981A JP 2003229638 A JP2003229638 A JP 2003229638A
- Authority
- JP
- Japan
- Prior art keywords
- density defect
- substrate
- nitride
- density
- compound semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 97
- -1 Nitride compound Chemical class 0.000 title description 7
- 230000007547 defect Effects 0.000 claims abstract description 139
- 239000000758 substrate Substances 0.000 claims abstract description 81
- 150000004767 nitrides Chemical class 0.000 claims abstract description 56
- 150000001875 compounds Chemical class 0.000 claims abstract description 36
- 239000013078 crystal Substances 0.000 claims description 37
- 230000000737 periodic effect Effects 0.000 claims description 6
- 238000005520 cutting process Methods 0.000 claims description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 abstract description 36
- 230000003287 optical effect Effects 0.000 abstract description 11
- 238000005253 cladding Methods 0.000 abstract description 8
- 229910002704 AlGaN Inorganic materials 0.000 abstract description 7
- 229910002601 GaN Inorganic materials 0.000 description 37
- 229910052594 sapphire Inorganic materials 0.000 description 9
- 239000010980 sapphire Substances 0.000 description 9
- 238000000034 method Methods 0.000 description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000000149 penetrating effect Effects 0.000 description 3
- 238000003776 cleavage reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000007017 scission Effects 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 240000002329 Inga feuillei Species 0.000 description 1
- 229910020068 MgAl Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000002109 crystal growth method Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Landscapes
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002027981A JP2003229638A (ja) | 2002-02-05 | 2002-02-05 | 窒化物系化合物半導体発光素子 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002027981A JP2003229638A (ja) | 2002-02-05 | 2002-02-05 | 窒化物系化合物半導体発光素子 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2003229638A true JP2003229638A (ja) | 2003-08-15 |
| JP2003229638A5 JP2003229638A5 (enrdf_load_stackoverflow) | 2005-08-18 |
Family
ID=27749339
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002027981A Pending JP2003229638A (ja) | 2002-02-05 | 2002-02-05 | 窒化物系化合物半導体発光素子 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2003229638A (enrdf_load_stackoverflow) |
Cited By (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005175247A (ja) * | 2003-12-12 | 2005-06-30 | Sharp Corp | 窒化物半導体発光素子の位置決め方法と、この位置決め方法を用いた窒化物半導体装置の製造方法 |
| WO2006112228A1 (ja) * | 2005-04-13 | 2006-10-26 | Mitsubishi Denki Kabushiki Kaisha | 半導体レーザ |
| JP2006339213A (ja) * | 2005-05-31 | 2006-12-14 | Sony Corp | 半導体発光素子 |
| JP2007180589A (ja) * | 2003-02-07 | 2007-07-12 | Sanyo Electric Co Ltd | 半導体素子およびその製造方法 |
| JP2007180588A (ja) * | 2007-03-29 | 2007-07-12 | Sanyo Electric Co Ltd | 窒化物系半導体レーザ素子 |
| WO2008004437A1 (en) | 2006-07-05 | 2008-01-10 | Panasonic Corporation | Semiconductor light emitting element and method for fabricating the same |
| US7327770B2 (en) | 2003-04-24 | 2008-02-05 | Sharp Kabushiki Kaisha | Nitride semiconductor laser device |
| US7372077B2 (en) | 2003-02-07 | 2008-05-13 | Sanyo Electric Co., Ltd. | Semiconductor device |
| JP2008130832A (ja) * | 2006-11-21 | 2008-06-05 | Sumitomo Electric Ind Ltd | 半導体発光素子および半導体発光素子の製造方法 |
| US7387678B2 (en) | 2003-06-26 | 2008-06-17 | Sumitomo Electric Industries, Ltd. | GaN substrate and method of fabricating the same, nitride semiconductor device and method of fabricating the same |
| JP2008177438A (ja) * | 2007-01-19 | 2008-07-31 | Sumitomo Electric Ind Ltd | 窒化物半導体発光素子 |
| JP2008198998A (ja) * | 2007-02-13 | 2008-08-28 | Samsung Electro-Mechanics Co Ltd | 半導体発光素子 |
| JP2008294344A (ja) * | 2007-05-28 | 2008-12-04 | Sanyo Electric Co Ltd | 窒化物系半導体レーザ素子の作製方法 |
| JP2008294343A (ja) * | 2007-05-28 | 2008-12-04 | Sanyo Electric Co Ltd | 窒化物系半導体レーザ素子の作製方法 |
| JP2009177211A (ja) * | 2003-02-07 | 2009-08-06 | Sanyo Electric Co Ltd | 半導体素子およびその製造方法 |
| JP2011151424A (ja) * | 2011-05-09 | 2011-08-04 | Sony Corp | 複数ビーム型の半導体発光素子 |
| JP2011187993A (ja) * | 2011-06-15 | 2011-09-22 | Sumitomo Electric Ind Ltd | 半導体発光素子および半導体発光素子の製造方法 |
| JP2012074740A (ja) * | 2011-12-28 | 2012-04-12 | Sumitomo Electric Ind Ltd | 半導体発光素子 |
| KR20180077433A (ko) * | 2016-12-29 | 2018-07-09 | 주식회사 루미스탈 | 질화물 반도체 소자 및 이의 제조 방법 |
-
2002
- 2002-02-05 JP JP2002027981A patent/JP2003229638A/ja active Pending
Cited By (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7589357B2 (en) | 2003-02-07 | 2009-09-15 | Sanyo Electric Co., Ltd. | Semiconductor device and method of fabricating the same |
| JP2009177211A (ja) * | 2003-02-07 | 2009-08-06 | Sanyo Electric Co Ltd | 半導体素子およびその製造方法 |
| US8101465B2 (en) | 2003-02-07 | 2012-01-24 | Sanyo Electric Co., Ltd. | Method of fabricating a semiconductor device with a back electrode |
| JP2007180589A (ja) * | 2003-02-07 | 2007-07-12 | Sanyo Electric Co Ltd | 半導体素子およびその製造方法 |
| US7372077B2 (en) | 2003-02-07 | 2008-05-13 | Sanyo Electric Co., Ltd. | Semiconductor device |
| US7327770B2 (en) | 2003-04-24 | 2008-02-05 | Sharp Kabushiki Kaisha | Nitride semiconductor laser device |
| US7387678B2 (en) | 2003-06-26 | 2008-06-17 | Sumitomo Electric Industries, Ltd. | GaN substrate and method of fabricating the same, nitride semiconductor device and method of fabricating the same |
| JP2005175247A (ja) * | 2003-12-12 | 2005-06-30 | Sharp Corp | 窒化物半導体発光素子の位置決め方法と、この位置決め方法を用いた窒化物半導体装置の製造方法 |
| US7920614B2 (en) | 2005-04-13 | 2011-04-05 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor laser |
| US7643527B2 (en) | 2005-04-13 | 2010-01-05 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor laser |
| WO2006112228A1 (ja) * | 2005-04-13 | 2006-10-26 | Mitsubishi Denki Kabushiki Kaisha | 半導体レーザ |
| JP2006294975A (ja) * | 2005-04-13 | 2006-10-26 | Mitsubishi Electric Corp | 半導体レーザ |
| JP2006339213A (ja) * | 2005-05-31 | 2006-12-14 | Sony Corp | 半導体発光素子 |
| WO2008004437A1 (en) | 2006-07-05 | 2008-01-10 | Panasonic Corporation | Semiconductor light emitting element and method for fabricating the same |
| US8178889B2 (en) | 2006-07-05 | 2012-05-15 | Panasonic Corporation | Semiconductor light emitting element having a single defect concentrated region and a light emitting which is not formed on the single defect concentrated region |
| JP2008130832A (ja) * | 2006-11-21 | 2008-06-05 | Sumitomo Electric Ind Ltd | 半導体発光素子および半導体発光素子の製造方法 |
| JP2008177438A (ja) * | 2007-01-19 | 2008-07-31 | Sumitomo Electric Ind Ltd | 窒化物半導体発光素子 |
| US9018666B2 (en) | 2007-02-13 | 2015-04-28 | Samsung Electronics Co., Ltd. | Semiconductor light emitting device |
| JP2008198998A (ja) * | 2007-02-13 | 2008-08-28 | Samsung Electro-Mechanics Co Ltd | 半導体発光素子 |
| JP2010118698A (ja) * | 2007-02-13 | 2010-05-27 | Samsung Electro-Mechanics Co Ltd | 半導体発光素子 |
| US8847266B2 (en) | 2007-02-13 | 2014-09-30 | Samsung Electronics Co., Ltd. | Semiconductor light emitting device |
| JP2007180588A (ja) * | 2007-03-29 | 2007-07-12 | Sanyo Electric Co Ltd | 窒化物系半導体レーザ素子 |
| JP2008294343A (ja) * | 2007-05-28 | 2008-12-04 | Sanyo Electric Co Ltd | 窒化物系半導体レーザ素子の作製方法 |
| JP2008294344A (ja) * | 2007-05-28 | 2008-12-04 | Sanyo Electric Co Ltd | 窒化物系半導体レーザ素子の作製方法 |
| JP2011151424A (ja) * | 2011-05-09 | 2011-08-04 | Sony Corp | 複数ビーム型の半導体発光素子 |
| JP2011187993A (ja) * | 2011-06-15 | 2011-09-22 | Sumitomo Electric Ind Ltd | 半導体発光素子および半導体発光素子の製造方法 |
| JP2012074740A (ja) * | 2011-12-28 | 2012-04-12 | Sumitomo Electric Ind Ltd | 半導体発光素子 |
| KR20180077433A (ko) * | 2016-12-29 | 2018-07-09 | 주식회사 루미스탈 | 질화물 반도체 소자 및 이의 제조 방법 |
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