JP2003218396A - 紫外線発光素子 - Google Patents

紫外線発光素子

Info

Publication number
JP2003218396A
JP2003218396A JP2002073871A JP2002073871A JP2003218396A JP 2003218396 A JP2003218396 A JP 2003218396A JP 2002073871 A JP2002073871 A JP 2002073871A JP 2002073871 A JP2002073871 A JP 2002073871A JP 2003218396 A JP2003218396 A JP 2003218396A
Authority
JP
Japan
Prior art keywords
layer
gan
light emitting
type
ultraviolet light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002073871A
Other languages
English (en)
Japanese (ja)
Inventor
Hiroaki Okagawa
広明 岡川
Kazuyuki Tadatomo
一行 只友
Yoichiro Ouchi
洋一郎 大内
Takashi Tsunekawa
高志 常川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Cable Industries Ltd
Original Assignee
Mitsubishi Cable Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Cable Industries Ltd filed Critical Mitsubishi Cable Industries Ltd
Priority to JP2002073871A priority Critical patent/JP2003218396A/ja
Priority to KR1020047007434A priority patent/KR100709058B1/ko
Priority to CNB028225341A priority patent/CN100355094C/zh
Priority to PCT/JP2002/011770 priority patent/WO2003043097A1/ja
Priority to TW91133333A priority patent/TW567620B/zh
Publication of JP2003218396A publication Critical patent/JP2003218396A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
JP2002073871A 2001-11-15 2002-03-18 紫外線発光素子 Pending JP2003218396A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2002073871A JP2003218396A (ja) 2001-11-15 2002-03-18 紫外線発光素子
KR1020047007434A KR100709058B1 (ko) 2001-11-15 2002-11-12 자외선 발광장치
CNB028225341A CN100355094C (zh) 2001-11-15 2002-11-12 紫外光发射元件
PCT/JP2002/011770 WO2003043097A1 (fr) 2001-11-15 2002-11-12 Dispositif emetteur ultraviolet
TW91133333A TW567620B (en) 2001-11-15 2002-11-14 Ultraviolet ray emitting element

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2001350615 2001-11-15
JP2001-350615 2001-11-15
JP2002073871A JP2003218396A (ja) 2001-11-15 2002-03-18 紫外線発光素子

Publications (1)

Publication Number Publication Date
JP2003218396A true JP2003218396A (ja) 2003-07-31

Family

ID=26624542

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002073871A Pending JP2003218396A (ja) 2001-11-15 2002-03-18 紫外線発光素子

Country Status (5)

Country Link
JP (1) JP2003218396A (ko)
KR (1) KR100709058B1 (ko)
CN (1) CN100355094C (ko)
TW (1) TW567620B (ko)
WO (1) WO2003043097A1 (ko)

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006100475A (ja) * 2004-09-29 2006-04-13 Toyoda Gosei Co Ltd 半導体発光素子
JP2007042944A (ja) * 2005-08-04 2007-02-15 Rohm Co Ltd 窒化物半導体素子の製法
WO2007037648A1 (en) * 2005-09-30 2007-04-05 Seoul Opto-Device Co., Ltd. Light emitting diode
JP2008153531A (ja) * 2006-12-19 2008-07-03 Sumitomo Electric Ind Ltd 半導体発光素子
JP2008198705A (ja) * 2007-02-09 2008-08-28 Showa Denko Kk Ｉｉｉ族窒化物半導体発光素子の製造方法、及びｉｉｉ族窒化物半導体発光素子、並びにランプ
WO2011111606A1 (ja) 2010-03-08 2011-09-15 日亜化学工業株式会社 窒化物系半導体発光素子
JP2012500489A (ja) * 2008-08-20 2012-01-05 ソウル オプト デバイス カンパニー リミテッド 変調ドーピング層を有する発光ダイオード
US8106419B2 (en) 2006-11-08 2012-01-31 Showa Denko K.K. Group-III nitride compound semiconductor light-emitting device, method of manufacturing group-III nitride compound semiconductor light-emitting device, and lamp
US8134168B2 (en) 2003-10-14 2012-03-13 Showa Denko K.K. Group-III nitride semiconductor device
KR20130007918A (ko) * 2011-07-11 2013-01-21 엘지이노텍 주식회사 발광소자, 발광 소자 제조방법 및 발광 소자 패키지
US8575594B2 (en) 2007-09-10 2013-11-05 Seoul Opto Device Co., Ltd. Light emitting diode having a barrier layer with a superlattice structure
KR101364169B1 (ko) * 2007-03-30 2014-02-17 서울바이오시스 주식회사 초격자 구조의 장벽층을 갖는 근자외선 발광 다이오드
JP2014078745A (ja) * 2007-08-08 2014-05-01 Regents Of The Univ Of California 長波長放射を有する非極性ｉｉｉ窒化物発光ダイオード
KR20140052572A (ko) * 2012-10-25 2014-05-07 엘지이노텍 주식회사 발광소자
JP2014154840A (ja) * 2013-02-13 2014-08-25 Mitsubishi Chemicals Corp ｍ面窒化物系発光ダイオードの製造方法
KR20140119704A (ko) * 2012-01-20 2014-10-10 오스람 옵토 세미컨덕터스 게엠베하 발광 다이오드 칩
KR20140144228A (ko) * 2012-03-19 2014-12-18 코닌클리케 필립스 엔.브이. 실리콘 기판 상에서 성장하는 발광 장치
US9466761B2 (en) 2007-03-29 2016-10-11 Seoul Viosys Co., Ltd. Light emitting diode having well and/or barrier layers with superlattice structure
WO2017155215A1 (ko) * 2016-03-10 2017-09-14 주식회사 소프트에피 근자외선 발광 반도체 발광소자 및 이에 사용되는 3족 질화물 반도체 템플릿

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100334739C (zh) * 2005-04-27 2007-08-29 中国科学院上海技术物理研究所 紫外双波段氮化镓探测器
JP2008177525A (ja) 2006-12-20 2008-07-31 Showa Denko Kk Ｉｉｉ族窒化物半導体発光素子の製造方法、及びｉｉｉ族窒化物半導体発光素子、並びにランプ
CN102136533A (zh) * 2008-01-24 2011-07-27 晶元光电股份有限公司 发光元件的制造方法
TWI466314B (zh) * 2008-03-05 2014-12-21 Advanced Optoelectronic Tech 三族氮化合物半導體發光二極體
KR101262725B1 (ko) * 2011-08-08 2013-05-09 일진엘이디(주) 누설전류 차단 효과가 우수한 질화물 반도체 발광소자 및 그 제조 방법
KR102019751B1 (ko) * 2013-01-29 2019-09-09 엘지이노텍 주식회사 발광소자
CN104157754B (zh) * 2014-07-03 2017-01-11 华南理工大学 生长在W衬底上的InGaN/GaN多量子阱及其制备方法
CN104518059A (zh) * 2014-11-06 2015-04-15 聚灿光电科技(苏州)有限公司 基于GaN基量子阱的外延结构及其生长方法
US11158995B2 (en) * 2018-06-01 2021-10-26 Visual Photonics Epitaxy Co., Ltd. Laser diode with defect blocking layer

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08111558A (ja) * 1994-10-07 1996-04-30 Hitachi Ltd 半導体レーザ素子
DE69637304T2 (de) * 1995-03-17 2008-08-07 Toyoda Gosei Co., Ltd. Lichtemittierende Halbleitervorrichtung bestehend aus einer III-V Nitridverbindung
JPH0936423A (ja) * 1995-07-24 1997-02-07 Toyoda Gosei Co Ltd ３族窒化物半導体発光素子
JP3778609B2 (ja) * 1996-04-26 2006-05-24 三洋電機株式会社 半導体素子の製造方法
JP3471685B2 (ja) * 1999-03-17 2003-12-02 三菱電線工業株式会社 半導体基材及びその製造方法
JP3460641B2 (ja) * 1999-09-28 2003-10-27 日亜化学工業株式会社 窒化物半導体素子
JP4501194B2 (ja) * 1999-12-08 2010-07-14 日亜化学工業株式会社 窒化物半導体発光素子

Cited By (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8134168B2 (en) 2003-10-14 2012-03-13 Showa Denko K.K. Group-III nitride semiconductor device
JP2006100475A (ja) * 2004-09-29 2006-04-13 Toyoda Gosei Co Ltd 半導体発光素子
JP2007042944A (ja) * 2005-08-04 2007-02-15 Rohm Co Ltd 窒化物半導体素子の製法
WO2007037648A1 (en) * 2005-09-30 2007-04-05 Seoul Opto-Device Co., Ltd. Light emitting diode
US8106419B2 (en) 2006-11-08 2012-01-31 Showa Denko K.K. Group-III nitride compound semiconductor light-emitting device, method of manufacturing group-III nitride compound semiconductor light-emitting device, and lamp
US9040319B2 (en) 2006-11-08 2015-05-26 Toyoda Gosei Co., Ltd. Group-III nitride compound semiconductor light-emitting device, method of manufacturing group-III nitride compound semiconductor light-emitting device, and lamp
JP2008153531A (ja) * 2006-12-19 2008-07-03 Sumitomo Electric Ind Ltd 半導体発光素子
JP2008198705A (ja) * 2007-02-09 2008-08-28 Showa Denko Kk Ｉｉｉ族窒化物半導体発光素子の製造方法、及びｉｉｉ族窒化物半導体発光素子、並びにランプ
US9466761B2 (en) 2007-03-29 2016-10-11 Seoul Viosys Co., Ltd. Light emitting diode having well and/or barrier layers with superlattice structure
KR101364169B1 (ko) * 2007-03-30 2014-02-17 서울바이오시스 주식회사 초격자 구조의 장벽층을 갖는 근자외선 발광 다이오드
JP2014078745A (ja) * 2007-08-08 2014-05-01 Regents Of The Univ Of California 長波長放射を有する非極性ｉｉｉ窒化物発光ダイオード
US8575594B2 (en) 2007-09-10 2013-11-05 Seoul Opto Device Co., Ltd. Light emitting diode having a barrier layer with a superlattice structure
JP2012500489A (ja) * 2008-08-20 2012-01-05 ソウル オプト デバイス カンパニー リミテッド 変調ドーピング層を有する発光ダイオード
WO2011111606A1 (ja) 2010-03-08 2011-09-15 日亜化学工業株式会社 窒化物系半導体発光素子
US8669546B2 (en) 2010-03-08 2014-03-11 Nichia Corporation Nitride group semiconductor light emitting device including multiquantum well structure
EP3399560A1 (en) 2010-03-08 2018-11-07 Nichia Corporation Nitride group semiconductor light emitting device
KR20130007918A (ko) * 2011-07-11 2013-01-21 엘지이노텍 주식회사 발광소자, 발광 소자 제조방법 및 발광 소자 패키지
KR101990095B1 (ko) 2011-07-11 2019-06-18 엘지이노텍 주식회사 발광소자, 발광 소자 제조방법 및 발광 소자 패키지
KR20140119704A (ko) * 2012-01-20 2014-10-10 오스람 옵토 세미컨덕터스 게엠베하 발광 다이오드 칩
KR101961980B1 (ko) 2012-01-20 2019-03-25 오스람 옵토 세미컨덕터스 게엠베하 발광 다이오드 칩
KR102116152B1 (ko) * 2012-03-19 2020-05-28 루미리즈 홀딩 비.브이. 실리콘 기판 상에서 성장하는 발광 장치
KR20140144228A (ko) * 2012-03-19 2014-12-18 코닌클리케 필립스 엔.브이. 실리콘 기판 상에서 성장하는 발광 장치
JP2015514312A (ja) * 2012-03-19 2015-05-18 コーニンクレッカ フィリップス エヌ ヴェ シリコン基板上に成長される発光デバイス
KR20140052572A (ko) * 2012-10-25 2014-05-07 엘지이노텍 주식회사 발광소자
KR101983775B1 (ko) 2012-10-25 2019-09-03 엘지이노텍 주식회사 발광소자
JP2014154840A (ja) * 2013-02-13 2014-08-25 Mitsubishi Chemicals Corp ｍ面窒化物系発光ダイオードの製造方法
WO2017155215A1 (ko) * 2016-03-10 2017-09-14 주식회사 소프트에피 근자외선 발광 반도체 발광소자 및 이에 사용되는 3족 질화물 반도체 템플릿
US11264538B2 (en) 2016-03-10 2022-03-01 Soft-Epi Inc. Near-ultraviolet light-emitting semiconductor light-emitting element and group III nitride semiconductor template used therefor

Also Published As

Publication number Publication date
TW200300300A (en) 2003-05-16
CN1586015A (zh) 2005-02-23
KR100709058B1 (ko) 2007-04-18
CN100355094C (zh) 2007-12-12
WO2003043097A1 (fr) 2003-05-22
TW567620B (en) 2003-12-21
KR20040062636A (ko) 2004-07-07

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