JP2003179068A - 画像表示装置およびその製造方法 - Google Patents

画像表示装置およびその製造方法

Info

Publication number
JP2003179068A
JP2003179068A JP2001378027A JP2001378027A JP2003179068A JP 2003179068 A JP2003179068 A JP 2003179068A JP 2001378027 A JP2001378027 A JP 2001378027A JP 2001378027 A JP2001378027 A JP 2001378027A JP 2003179068 A JP2003179068 A JP 2003179068A
Authority
JP
Japan
Prior art keywords
circuit
display device
thin film
block
silicon film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001378027A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003179068A5 (cg-RX-API-DMAC7.html
Inventor
Takeo Shiba
健夫 芝
Mutsuko Hatano
睦子 波多野
Shinya Yamaguchi
伸也 山口
Narimoto Boku
成基 朴
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2001378027A priority Critical patent/JP2003179068A/ja
Priority to TW091111687A priority patent/TWI268612B/zh
Priority to US10/187,999 priority patent/US6713324B2/en
Priority to KR1020020039650A priority patent/KR100894945B1/ko
Priority to CNB2007101411769A priority patent/CN100487921C/zh
Priority to CNB021405980A priority patent/CN100335956C/zh
Publication of JP2003179068A publication Critical patent/JP2003179068A/ja
Priority to US10/778,082 priority patent/US6949419B2/en
Priority to US10/983,683 priority patent/US7193238B2/en
Publication of JP2003179068A5 publication Critical patent/JP2003179068A5/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G02F1/13454—Drivers integrated on the active matrix substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H10D30/6715—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6731—Top-gate only TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6745—Polycrystalline or microcrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
    • H10D86/0229—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials characterised by control of the annealing or irradiation parameters
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/10—Materials and properties semiconductor
    • G02F2202/104—Materials and properties semiconductor poly-Si

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Liquid Crystal (AREA)
  • Recrystallisation Techniques (AREA)
JP2001378027A 2001-12-12 2001-12-12 画像表示装置およびその製造方法 Pending JP2003179068A (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP2001378027A JP2003179068A (ja) 2001-12-12 2001-12-12 画像表示装置およびその製造方法
TW091111687A TWI268612B (en) 2001-12-12 2002-05-31 Display device and a method for manufacturing the same
US10/187,999 US6713324B2 (en) 2001-12-12 2002-07-03 Display device and a method for manufacturing the same
KR1020020039650A KR100894945B1 (ko) 2001-12-12 2002-07-09 화상 표시 장치 및 그 제조 방법
CNB2007101411769A CN100487921C (zh) 2001-12-12 2002-07-10 图像显示装置及其制造方法
CNB021405980A CN100335956C (zh) 2001-12-12 2002-07-10 图像显示装置
US10/778,082 US6949419B2 (en) 2001-12-12 2004-02-17 Display device and a method for manufacturing the same
US10/983,683 US7193238B2 (en) 2001-12-12 2004-11-09 Display device and a method for manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001378027A JP2003179068A (ja) 2001-12-12 2001-12-12 画像表示装置およびその製造方法

Publications (2)

Publication Number Publication Date
JP2003179068A true JP2003179068A (ja) 2003-06-27
JP2003179068A5 JP2003179068A5 (cg-RX-API-DMAC7.html) 2005-07-21

Family

ID=19185862

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001378027A Pending JP2003179068A (ja) 2001-12-12 2001-12-12 画像表示装置およびその製造方法

Country Status (5)

Country Link
US (3) US6713324B2 (cg-RX-API-DMAC7.html)
JP (1) JP2003179068A (cg-RX-API-DMAC7.html)
KR (1) KR100894945B1 (cg-RX-API-DMAC7.html)
CN (2) CN100487921C (cg-RX-API-DMAC7.html)
TW (1) TWI268612B (cg-RX-API-DMAC7.html)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005099427A (ja) * 2003-09-25 2005-04-14 Hitachi Ltd 表示パネルの製造方法及び表示パネル
JP2005150641A (ja) * 2003-11-19 2005-06-09 Seiko Epson Corp 回路基板、回路基板の製造方法、表示装置および電子機器
US7132343B2 (en) 2003-02-20 2006-11-07 Hitachi, Ltd. Method and apparatus for manufacturing display panel
US7397831B2 (en) 2004-01-30 2008-07-08 Hitachi Displays, Ltd. Laser annealing apparatus and annealing method of semiconductor thin film using the same
US7557376B2 (en) 2005-09-26 2009-07-07 Hitachi Displays, Ltd. Display device using first and second semiconductor films of different crystallinity and boundary section therebetween

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4310076B2 (ja) * 2001-05-31 2009-08-05 キヤノン株式会社 結晶性薄膜の製造方法
JP3903761B2 (ja) * 2001-10-10 2007-04-11 株式会社日立製作所 レ−ザアニ−ル方法およびレ−ザアニ−ル装置
JP4813743B2 (ja) * 2002-07-24 2011-11-09 株式会社 日立ディスプレイズ 画像表示装置の製造方法
KR100450761B1 (ko) * 2002-09-14 2004-10-01 한국전자통신연구원 능동 구동형 유기 이엘 다이오드 디스플레이 패널 회로
US7142030B2 (en) * 2002-12-03 2006-11-28 Semiconductor Energy Laboratory Co., Ltd. Data latch circuit and electronic device
US6870895B2 (en) * 2002-12-19 2005-03-22 Semiconductor Energy Laboratory Co., Ltd. Shift register and driving method thereof
DE102004007398B4 (de) * 2004-02-16 2007-10-18 Infineon Technologies Ag Konfigurierbare Gate-Array-Zelle mit erweiterter Gate-Elektrode
JP2006019609A (ja) * 2004-07-05 2006-01-19 Hitachi Displays Ltd 画像表示装置
JP2006054073A (ja) * 2004-08-10 2006-02-23 Fujitsu Hitachi Plasma Display Ltd プラズマディスプレイパネルの製造方法
KR101064186B1 (ko) * 2005-08-10 2011-09-14 삼성전자주식회사 레벨쉬프터와, 이를 갖는 표시장치
CN108172625B (zh) * 2016-12-07 2020-09-29 清华大学 一种逻辑电路

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JPH09283438A (ja) * 1996-04-08 1997-10-31 A G Technol Kk 多結晶半導体薄膜、その形成方法、多結晶半導体ｔｆｔ及びｔｆｔ基板
JPH10284418A (ja) * 1997-04-02 1998-10-23 Sharp Corp 薄膜半導体装置およびその製造方法
JP2000243970A (ja) * 1999-02-24 2000-09-08 Matsushita Electric Ind Co Ltd 薄膜トランジスタとその製造方法及びそれを用いた液晶表示装置とその製造方法
JP2000252228A (ja) * 1999-03-04 2000-09-14 Toshiba Corp レーザアニール装置
JP2000275668A (ja) * 1999-03-19 2000-10-06 Fujitsu Ltd レーザアニーリング装置、液晶表示装置及びその製造方法
JP2003224084A (ja) * 2001-11-22 2003-08-08 Semiconductor Energy Lab Co Ltd 半導体製造装置

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JP2000058863A (ja) * 1993-05-26 2000-02-25 Semiconductor Energy Lab Co Ltd 半導体装置
TW272319B (cg-RX-API-DMAC7.html) * 1993-12-20 1996-03-11 Sharp Kk
US6723590B1 (en) * 1994-03-09 2004-04-20 Semiconductor Energy Laboratory Co., Ltd. Method for laser-processing semiconductor device
TW403993B (en) * 1994-08-29 2000-09-01 Semiconductor Energy Lab Semiconductor circuit for electro-optical device and method of manufacturing the same
JP3081497B2 (ja) * 1995-03-30 2000-08-28 三洋電機株式会社 表示装置及びその製造方法
KR100514417B1 (ko) * 1995-12-26 2005-12-20 세이코 엡슨 가부시키가이샤 액티브매트릭스기판,액티브매트릭스기판제조방법,액정표시장치및전자기기
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JPH09321310A (ja) * 1996-05-31 1997-12-12 Sanyo Electric Co Ltd 半導体装置の製造方法
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JP3445121B2 (ja) * 1997-10-24 2003-09-08 キヤノン株式会社 マトリクス基板と液晶表示装置及びこれを用いるプロジェクター
KR20010033202A (ko) * 1997-12-17 2001-04-25 모리시타 요이찌 반도체박막의 제조방법과 그 제조장치 및 반도체소자와 그제조방법
KR100292048B1 (ko) * 1998-06-09 2001-07-12 구본준, 론 위라하디락사 박막트랜지스터액정표시장치의제조방법
WO2000002251A1 (en) * 1998-07-06 2000-01-13 Matsushita Electric Industrial Co., Ltd. Thin film transistor and liquid crystal display
JP5210478B2 (ja) * 2001-08-31 2013-06-12 株式会社半導体エネルギー研究所 表示装置
JP4190798B2 (ja) * 2002-05-08 2008-12-03 Ｎｅｃ液晶テクノロジー株式会社 薄膜トランジスタ及びその製造方法
JP2004119919A (ja) * 2002-09-30 2004-04-15 Hitachi Ltd 半導体薄膜および半導体薄膜の製造方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09283438A (ja) * 1996-04-08 1997-10-31 A G Technol Kk 多結晶半導体薄膜、その形成方法、多結晶半導体ｔｆｔ及びｔｆｔ基板
JPH10284418A (ja) * 1997-04-02 1998-10-23 Sharp Corp 薄膜半導体装置およびその製造方法
JP2000243970A (ja) * 1999-02-24 2000-09-08 Matsushita Electric Ind Co Ltd 薄膜トランジスタとその製造方法及びそれを用いた液晶表示装置とその製造方法
JP2000252228A (ja) * 1999-03-04 2000-09-14 Toshiba Corp レーザアニール装置
JP2000275668A (ja) * 1999-03-19 2000-10-06 Fujitsu Ltd レーザアニーリング装置、液晶表示装置及びその製造方法
JP2003224084A (ja) * 2001-11-22 2003-08-08 Semiconductor Energy Lab Co Ltd 半導体製造装置

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7132343B2 (en) 2003-02-20 2006-11-07 Hitachi, Ltd. Method and apparatus for manufacturing display panel
JP2005099427A (ja) * 2003-09-25 2005-04-14 Hitachi Ltd 表示パネルの製造方法及び表示パネル
JP2005150641A (ja) * 2003-11-19 2005-06-09 Seiko Epson Corp 回路基板、回路基板の製造方法、表示装置および電子機器
US7397831B2 (en) 2004-01-30 2008-07-08 Hitachi Displays, Ltd. Laser annealing apparatus and annealing method of semiconductor thin film using the same
US7557376B2 (en) 2005-09-26 2009-07-07 Hitachi Displays, Ltd. Display device using first and second semiconductor films of different crystallinity and boundary section therebetween

Also Published As

Publication number Publication date
US7193238B2 (en) 2007-03-20
US20040185605A1 (en) 2004-09-23
CN100487921C (zh) 2009-05-13
KR20030051152A (ko) 2003-06-25
US20050085021A1 (en) 2005-04-21
US6949419B2 (en) 2005-09-27
CN1426043A (zh) 2003-06-25
KR100894945B1 (ko) 2009-04-27
TWI268612B (en) 2006-12-11
CN100335956C (zh) 2007-09-05
US6713324B2 (en) 2004-03-30
CN101114098A (zh) 2008-01-30
US20030109074A1 (en) 2003-06-12

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