JP2003163337A5 - - Google Patents

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Publication number
JP2003163337A5
JP2003163337A5 JP2002233745A JP2002233745A JP2003163337A5 JP 2003163337 A5 JP2003163337 A5 JP 2003163337A5 JP 2002233745 A JP2002233745 A JP 2002233745A JP 2002233745 A JP2002233745 A JP 2002233745A JP 2003163337 A5 JP2003163337 A5 JP 2003163337A5
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JP
Japan
Prior art keywords
material layer
layer
substrate
forming
peeled
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JP2002233745A
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English (en)
Japanese (ja)
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JP4472238B2 (ja
JP2003163337A (ja
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Priority to JP2002233745A priority Critical patent/JP4472238B2/ja
Priority claimed from JP2002233745A external-priority patent/JP4472238B2/ja
Publication of JP2003163337A publication Critical patent/JP2003163337A/ja
Publication of JP2003163337A5 publication Critical patent/JP2003163337A5/ja
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Publication of JP4472238B2 publication Critical patent/JP4472238B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2002233745A 2001-08-10 2002-08-09 剥離方法および半導体装置の作製方法 Expired - Fee Related JP4472238B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002233745A JP4472238B2 (ja) 2001-08-10 2002-08-09 剥離方法および半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2001-244885 2001-08-10
JP2001244885 2001-08-10
JP2002233745A JP4472238B2 (ja) 2001-08-10 2002-08-09 剥離方法および半導体装置の作製方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2006036668A Division JP4602261B2 (ja) 2001-08-10 2006-02-14 剥離方法および半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2003163337A JP2003163337A (ja) 2003-06-06
JP2003163337A5 true JP2003163337A5 (zh) 2005-10-20
JP4472238B2 JP4472238B2 (ja) 2010-06-02

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Family Applications (1)

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JP2002233745A Expired - Fee Related JP4472238B2 (ja) 2001-08-10 2002-08-09 剥離方法および半導体装置の作製方法

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JP (1) JP4472238B2 (zh)

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4602261B2 (ja) * 2001-08-10 2010-12-22 株式会社半導体エネルギー研究所 剥離方法および半導体装置の作製方法
TW554398B (en) * 2001-08-10 2003-09-21 Semiconductor Energy Lab Method of peeling off and method of manufacturing semiconductor device
US8937580B2 (en) * 2003-08-08 2015-01-20 Semiconductor Energy Laboratory Co., Ltd. Driving method of light emitting device and light emitting device
EP2259300B1 (en) * 2003-10-28 2020-04-08 Semiconductor Energy Laboratory Co., Ltd. Manufacture of semiconductor device
GB0327093D0 (en) * 2003-11-21 2003-12-24 Koninkl Philips Electronics Nv Active matrix displays and other electronic devices having plastic substrates
JP2006040660A (ja) * 2004-07-26 2006-02-09 Nippon Seiki Co Ltd 有機ｅｌパネル
US8350466B2 (en) 2004-09-17 2013-01-08 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method thereof
JP2006352079A (ja) * 2005-03-22 2006-12-28 Sumitomo Chemical Co Ltd 自立基板、その製造方法及び半導体発光素子
EP1760776B1 (en) * 2005-08-31 2019-12-25 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method for semiconductor device with flexible substrate
JP2007123858A (ja) * 2005-09-29 2007-05-17 Sumitomo Chemical Co Ltd ３−５族窒化物半導体の製造方法
GB2444448A (en) * 2005-09-29 2008-06-04 Sumitomo Chemical Co Method for producing group 3-5 nitride semiconductor and method for manufacturing light-emitting device
JP4883991B2 (ja) * 2005-11-28 2012-02-22 国立大学法人東京工業大学 レーザーリフトオフ法およびレーザーリフトオフ装置
CN100375236C (zh) * 2005-11-30 2008-03-12 董玟昌 形成可分离界面的方法及使用此方法制作微机电薄膜
JP2008159934A (ja) * 2006-12-25 2008-07-10 Kyodo Printing Co Ltd フレキシブルｔｆｔ基板及びその製造方法とフレキシブルディスプレイ
US7759629B2 (en) 2007-03-20 2010-07-20 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device
KR100947435B1 (ko) 2008-03-25 2010-03-12 삼성모바일디스플레이주식회사 플렉서블 디스플레이 및 그 제조 방법
KR101010023B1 (ko) 2008-12-15 2011-01-21 포항공과대학교 산학협력단 레이저 빔을 이용한 플렉서블 소자의 제조 방법
JP5545970B2 (ja) * 2009-03-26 2014-07-09 株式会社半導体エネルギー研究所 発光装置及びその作製方法
JP2011248072A (ja) * 2010-05-26 2011-12-08 Hitachi Displays Ltd 画像表示装置の製造方法
KR20120026970A (ko) 2010-09-10 2012-03-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 발광 장치
KR101137514B1 (ko) * 2011-03-11 2012-04-20 한국광기술원 나노 입자를 이용한 질화물계 반도체 소자의 제조 방법
RU2469433C1 (ru) * 2011-07-13 2012-12-10 Юрий Георгиевич Шретер Способ лазерного отделения эпитаксиальной пленки или слоя эпитаксиальной пленки от ростовой подложки эпитаксиальной полупроводниковой структуры (варианты)
KR101863142B1 (ko) 2011-08-31 2018-05-31 엘지디스플레이 주식회사 플렉서블 디스플레이 장치의 제조방법
JP2015111603A (ja) * 2012-03-22 2015-06-18 シャープ株式会社 半導体装置の製造方法、半導体装置、及び表示装置
JP6532911B2 (ja) * 2012-05-04 2019-06-19 株式会社半導体エネルギー研究所 発光装置の作製方法
JP2014011256A (ja) * 2012-06-28 2014-01-20 Dainippon Screen Mfg Co Ltd 熱処理方法および熱処理装置
US9356188B2 (en) 2013-09-06 2016-05-31 Veeco Instruments, Inc. Tensile separation of a semiconducting stack
JP6727762B2 (ja) * 2014-05-30 2020-07-22 株式会社半導体エネルギー研究所 発光装置及び電子機器
JP6334380B2 (ja) * 2014-10-09 2018-05-30 エルジー ディスプレイ カンパニー リミテッド 樹脂フィルム層の剥離方法及び薄膜素子デバイスの製造方法
US9515272B2 (en) * 2014-11-12 2016-12-06 Rohm And Haas Electronic Materials Llc Display device manufacture using a sacrificial layer interposed between a carrier and a display device substrate
KR101696431B1 (ko) * 2015-09-24 2017-01-16 한양대학교 에리카산학협력단 초박형 실리콘-금속 이종 접합 기판 제조 방법
CN108432345B (zh) * 2015-12-28 2020-02-28 鸿海精密工业股份有限公司 有机el显示装置的制造方法
US10279576B2 (en) * 2016-04-26 2019-05-07 Semiconductor Energy Laboratory Co., Ltd. Peeling method and manufacturing method of flexible device
US11637009B2 (en) * 2016-10-07 2023-04-25 Semiconductor Energy Laboratory Co., Ltd. Cleaning method of glass substrate, manufacturing method of semiconductor device, and glass substrate
JP6744479B2 (ja) * 2017-03-31 2020-08-19 シャープ株式会社 表示デバイス、表示デバイスの製造方法、表示デバイスの製造装置

Family Cites Families (9)

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JPH07142570A (ja) * 1993-11-12 1995-06-02 Ube Ind Ltd 複合半導体基板及びその製造方法
JP4619462B2 (ja) * 1996-08-27 2011-01-26 セイコーエプソン株式会社 薄膜素子の転写方法
JP4619461B2 (ja) * 1996-08-27 2011-01-26 セイコーエプソン株式会社 薄膜デバイスの転写方法、及びデバイスの製造方法
JP3809681B2 (ja) * 1996-08-27 2006-08-16 セイコーエプソン株式会社 剥離方法
KR100342575B1 (ko) * 1996-11-11 2002-07-04 우츠미 오사무 기재의 평탄화 방법, 피막 부착 기재 및 반도체 장치의 제조방법
JPH1187799A (ja) * 1997-09-12 1999-03-30 Matsushita Electric Ind Co Ltd 磁気抵抗素子とその製造方法
JPH11135882A (ja) * 1997-10-28 1999-05-21 Sharp Corp 化合物半導体基板、及び化合物半導体基板の製造方法、並びに発光素子
JP2001166301A (ja) * 1999-12-06 2001-06-22 Seiko Epson Corp バックライト内蔵型液晶表示装置及びその製造方法
JP4478268B2 (ja) * 1999-12-28 2010-06-09 セイコーエプソン株式会社 薄膜デバイスの製造方法

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