JP2003133507A5 - - Google Patents

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Publication number
JP2003133507A5
JP2003133507A5 JP2001329687A JP2001329687A JP2003133507A5 JP 2003133507 A5 JP2003133507 A5 JP 2003133507A5 JP 2001329687 A JP2001329687 A JP 2001329687A JP 2001329687 A JP2001329687 A JP 2001329687A JP 2003133507 A5 JP2003133507 A5 JP 2003133507A5
Authority
JP
Japan
Prior art keywords
capacitor
pitch
semiconductor device
wiring
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2001329687A
Other languages
English (en)
Japanese (ja)
Other versions
JP3967108B2 (ja
JP2003133507A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2001329687A priority Critical patent/JP3967108B2/ja
Priority claimed from JP2001329687A external-priority patent/JP3967108B2/ja
Priority to US10/092,525 priority patent/US7176556B2/en
Publication of JP2003133507A publication Critical patent/JP2003133507A/ja
Publication of JP2003133507A5 publication Critical patent/JP2003133507A5/ja
Priority to US11/600,211 priority patent/US7557014B2/en
Application granted granted Critical
Publication of JP3967108B2 publication Critical patent/JP3967108B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2001329687A 2001-10-26 2001-10-26 半導体装置およびその製造方法 Expired - Fee Related JP3967108B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2001329687A JP3967108B2 (ja) 2001-10-26 2001-10-26 半導体装置およびその製造方法
US10/092,525 US7176556B2 (en) 2001-10-26 2002-03-08 Semiconductor system-in-package
US11/600,211 US7557014B2 (en) 2001-10-26 2006-11-16 Semiconductor system-in-package

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001329687A JP3967108B2 (ja) 2001-10-26 2001-10-26 半導体装置およびその製造方法

Publications (3)

Publication Number Publication Date
JP2003133507A JP2003133507A (ja) 2003-05-09
JP2003133507A5 true JP2003133507A5 (enExample) 2005-07-07
JP3967108B2 JP3967108B2 (ja) 2007-08-29

Family

ID=19145543

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001329687A Expired - Fee Related JP3967108B2 (ja) 2001-10-26 2001-10-26 半導体装置およびその製造方法

Country Status (2)

Country Link
US (2) US7176556B2 (enExample)
JP (1) JP3967108B2 (enExample)

Families Citing this family (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6979894B1 (en) 2001-09-27 2005-12-27 Marvell International Ltd. Integrated chip package having intermediate substrate
JP3492348B2 (ja) * 2001-12-26 2004-02-03 新光電気工業株式会社 半導体装置用パッケージの製造方法
JP2005011837A (ja) 2003-06-16 2005-01-13 Nippon Micron Kk 半導体装置用基板、半導体装置およびその製造方法
US7808073B2 (en) * 2004-03-31 2010-10-05 Casio Computer Co., Ltd. Network electronic component, semiconductor device incorporating network electronic component, and methods of manufacturing both
JP4353861B2 (ja) 2004-06-30 2009-10-28 Necエレクトロニクス株式会社 半導体装置
JP2006053662A (ja) 2004-08-10 2006-02-23 Matsushita Electric Ind Co Ltd 多重プロセッサ
JP4504774B2 (ja) * 2004-09-30 2010-07-14 大日本印刷株式会社 配線基板の製造方法
DE102004050476B3 (de) * 2004-10-16 2006-04-06 Infineon Technologies Ag Verfahren zum Herstellen einer Umverdrahtungs-Leiterplatte
US7345370B2 (en) * 2005-01-12 2008-03-18 International Business Machines Corporation Wiring patterns formed by selective metal plating
JP4185499B2 (ja) * 2005-02-18 2008-11-26 富士通マイクロエレクトロニクス株式会社 半導体装置
US20060253476A1 (en) * 2005-05-09 2006-11-09 Roth Mary A Technique for relationship discovery in schemas using semantic name indexing
DE102005062932B4 (de) * 2005-12-29 2015-12-24 Polaris Innovations Ltd. Chip-Träger mit reduzierter Störsignalempfindlichkeit
KR100782483B1 (ko) * 2006-01-19 2007-12-05 삼성전자주식회사 내부단자 배선을 갖는 패키지 보드 및 이를 채택하는반도체 패키지
JP4904891B2 (ja) 2006-03-31 2012-03-28 富士通株式会社 回路基板および電子装置、回路基板の製造方法
US8329573B2 (en) 2008-05-06 2012-12-11 Gautham Viswanadam Wafer level integration module having controlled resistivity interconnects
SG156550A1 (en) * 2008-05-06 2009-11-26 Gautham Viswanadam Wafer level integration module with interconnects
WO2010041165A1 (en) * 2008-10-10 2010-04-15 Nxp B.V. Method of plating through wafer vias in a wafer for 3d packaging
JP4833307B2 (ja) * 2009-02-24 2011-12-07 インターナショナル・ビジネス・マシーンズ・コーポレーション 半導体モジュール、端子板、端子板の製造方法および半導体モジュールの製造方法
JP5106460B2 (ja) * 2009-03-26 2012-12-26 新光電気工業株式会社 半導体装置及びその製造方法、並びに電子装置
KR101169531B1 (ko) * 2009-07-03 2012-07-27 가부시키가이샤 테라미크로스 반도체구성체 및 그 제조방법과 반도체장치 및 그 제조방법
TWI419277B (zh) * 2010-08-05 2013-12-11 日月光半導體製造股份有限公司 線路基板及其製作方法與封裝結構及其製作方法
JP5275400B2 (ja) 2011-04-18 2013-08-28 新光電気工業株式会社 配線基板、半導体装置及び配線基板の製造方法
JP5275401B2 (ja) 2011-04-18 2013-08-28 新光電気工業株式会社 配線基板、半導体装置及び配線基板の製造方法
US20120292777A1 (en) * 2011-05-18 2012-11-22 Lotz Jonathan P Backside Power Delivery Using Die Stacking
US8994157B1 (en) 2011-05-27 2015-03-31 Scientific Components Corporation Circuit system in a package
JP6136061B2 (ja) * 2012-12-13 2017-05-31 株式会社村田製作所 半導体装置
US9865524B2 (en) * 2013-04-08 2018-01-09 STATS ChipPAC Pte. Ltd. Semiconductor device and method of forming conductive vias using backside via reveal and selective passivation
US10020222B2 (en) * 2013-05-15 2018-07-10 Canon, Inc. Method for processing an inner wall surface of a micro vacancy
US10090239B2 (en) * 2013-06-26 2018-10-02 Intel Corporation Metal-insulator-metal on-die capacitor with partial vias
WO2015003264A1 (en) 2013-07-08 2015-01-15 Motion Engine Inc. Mems device and method of manufacturing
WO2015042700A1 (en) 2013-09-24 2015-04-02 Motion Engine Inc. Mems components and method of wafer-level manufacturing thereof
WO2015013827A1 (en) 2013-08-02 2015-02-05 Motion Engine Inc. Mems motion sensor for sub-resonance angular rate sensing
WO2015083281A1 (ja) * 2013-12-06 2015-06-11 ルネサスエレクトロニクス株式会社 半導体装置
WO2015083289A1 (ja) * 2013-12-06 2015-06-11 ルネサスエレクトロニクス株式会社 半導体装置
JP6590812B2 (ja) 2014-01-09 2019-10-16 モーション・エンジン・インコーポレーテッド 集積memsシステム
JP2015153978A (ja) * 2014-02-18 2015-08-24 キヤノン株式会社 貫通配線の作製方法
WO2015154173A1 (en) 2014-04-10 2015-10-15 Motion Engine Inc. Mems pressure sensor
US11674803B2 (en) 2014-06-02 2023-06-13 Motion Engine, Inc. Multi-mass MEMS motion sensor
CA3004760A1 (en) 2014-12-09 2016-06-16 Motion Engine Inc. 3d mems magnetometer and associated methods
WO2016112463A1 (en) 2015-01-15 2016-07-21 Motion Engine Inc. 3d mems device with hermetic cavity
US9735227B2 (en) * 2015-08-03 2017-08-15 Synopsys, Inc. 2D material super capacitors
WO2020093277A1 (zh) * 2018-11-07 2020-05-14 北京比特大陆科技有限公司 芯片及电器设备
KR102906435B1 (ko) 2020-10-07 2026-01-02 삼성전자주식회사 반도체 패키지

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58125859A (ja) 1982-01-22 1983-07-27 Hitachi Ltd 半導体装置
US5229647A (en) * 1991-03-27 1993-07-20 Micron Technology, Inc. High density data storage using stacked wafers
US5382827A (en) * 1992-08-07 1995-01-17 Fujitsu Limited Functional substrates for packaging semiconductor chips
US5772451A (en) * 1993-11-16 1998-06-30 Form Factor, Inc. Sockets for electronic components and methods of connecting to electronic components
US5497938A (en) * 1994-09-01 1996-03-12 Intel Corporation Tape with solder forms and methods for transferring solder to chip assemblies
US5904499A (en) * 1994-12-22 1999-05-18 Pace; Benedict G Package for power semiconductor chips
JP2001523390A (ja) * 1994-12-22 2001-11-20 ベネディクト・ジー・ペース 反転型のチップが接合された高い実装効率を有するモジュール
JP3245329B2 (ja) * 1995-06-19 2002-01-15 京セラ株式会社 半導体素子収納用パッケージ
US5888585A (en) * 1996-02-08 1999-03-30 Symetrix Corporation Process for making an integrated circuit with high dielectric constant barium-strontium-niobium oxide
JPH1084082A (ja) 1996-09-06 1998-03-31 Yokogawa Electric Corp Mcm用シリコン基板
US5939782A (en) * 1998-03-03 1999-08-17 Sun Microsystems, Inc. Package construction for integrated circuit chip with bypass capacitor
JP2000031145A (ja) 1998-07-09 2000-01-28 Toshiba Corp 半導体装置の製造方法
JP4547728B2 (ja) 1999-03-29 2010-09-22 ソニー株式会社 半導体装置及びその製造方法
JP2001102523A (ja) * 1999-09-28 2001-04-13 Sony Corp 薄膜デバイスおよびその製造方法
JP2001177008A (ja) 1999-12-21 2001-06-29 Hitachi Ltd キャパシタを内蔵した回路基板とそれを用いた半導体装置
JP2001185442A (ja) * 1999-12-27 2001-07-06 Murata Mfg Co Ltd 積層コンデンサ、デカップリングコンデンサの接続構造および配線基板
US6562660B1 (en) * 2000-03-08 2003-05-13 Sanyo Electric Co., Ltd. Method of manufacturing the circuit device and circuit device
JP2002008942A (ja) * 2000-06-16 2002-01-11 Fujitsu Ltd コンデンサ装置、コンデンサ装置の製造方法及びコンデンサ装置が実装されたモジュール
AU2001273458A1 (en) * 2000-07-13 2002-01-30 Isothermal Systems Research, Inc. Power semiconductor switching devices, power converters, integrated circuit assemblies, integrated circuitry, power current switching methods, methods of forming a power semiconductor switching device, power conversion methods, power semiconductor switching device packaging methods, and methods of forming a power transistor
US6611419B1 (en) * 2000-07-31 2003-08-26 Intel Corporation Electronic assembly comprising substrate with embedded capacitors
US6775150B1 (en) * 2000-08-30 2004-08-10 Intel Corporation Electronic assembly comprising ceramic/organic hybrid substrate with embedded capacitors and methods of manufacture

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