JP2003029169A5 - - Google Patents
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- JP2003029169A5 JP2003029169A5 JP2001212251A JP2001212251A JP2003029169A5 JP 2003029169 A5 JP2003029169 A5 JP 2003029169A5 JP 2001212251 A JP2001212251 A JP 2001212251A JP 2001212251 A JP2001212251 A JP 2001212251A JP 2003029169 A5 JP2003029169 A5 JP 2003029169A5
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- Prior art keywords
- multilayer structure
- refractive index
- optical multilayer
- layer
- optical
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Description
【0027】
第2の層13は、透明材料により形成されたものであり、例えば、酸化チタン(TiO2 )(n2 =2.4),窒化珪素(Si3 N4 )(n2 =2.0),酸化亜鉛(ZnO)(n2 =2.0),酸化ニオブ(Nb2 O5 )(n2 =2.2),酸化タンタル(Ta2 O5 )(n2 =2.1),酸化珪素(SiO)(n 2 =2.0),酸化スズ(SnO2 )(n2 =2.0),ITO(Indium-Tin Oxide) (n2 =2.0)などにより形成されている。
第2の層13は、透明材料により形成されたものであり、例えば、酸化チタン(TiO2 )(n2 =2.4),窒化珪素(Si3 N4 )(n2 =2.0),酸化亜鉛(ZnO)(n2 =2.0),酸化ニオブ(Nb2 O5 )(n2 =2.2),酸化タンタル(Ta2 O5 )(n2 =2.1),酸化珪素(SiO)(n 2 =2.0),酸化スズ(SnO2 )(n2 =2.0),ITO(Indium-Tin Oxide) (n2 =2.0)などにより形成されている。
【0065】
この光スイッチング装置100では、TaNX 膜102を接地して電位を0Vとし、第2の層側に形成されたITO膜106に例えば+12Vの電圧を印加すると、その電位差によりTaNX 膜102とITO膜106との間に静電引力が発生し、図14では光スイッチング素子100A,100Cのように第1の層と第2の層とが密着し、間隙部104が「0」の状態となる。この状態では、入射光P1 は上記多層構造体を透過し、更に基板101に吸収される。
この光スイッチング装置100では、TaNX 膜102を接地して電位を0Vとし、第2の層側に形成されたITO膜106に例えば+12Vの電圧を印加すると、その電位差によりTaNX 膜102とITO膜106との間に静電引力が発生し、図14では光スイッチング素子100A,100Cのように第1の層と第2の層とが密着し、間隙部104が「0」の状態となる。この状態では、入射光P1 は上記多層構造体を透過し、更に基板101に吸収される。
【図面の簡単な説明】
【図1】本発明の一実施の形態に係る光学多層構造体の間隙部が「λ/4」のときの構成を表す断面図である。
【図2】図1に示した光学多層構造体の間隙部が「0」のときの構成を表す断面図である。
【図3】図1に示した光学多層構造体の製造工程を説明するための断面図である。
【図4】図3の工程に続く工程を説明するための断面図である。
【図5】光学アドミッタンスダイアグラム上で、n2 の屈折率を持つ透明な第2の層が、ダイアグラム上の(1,0)の点 (空気のアドミッタンス) を通る軌跡を表す図である。
【図6】図1の光学多層構造体の変形例を表す図である。
【図7】図1に示した光学多層構造体の一具体例の反射特性を表す図である。
【図8】図7の例の低反射時の光学アドミッタンスを説明するための図である。
【図9】図1の光学多層構造体の更に他の変形例を説明するための断面図である。
【図10】光学多層構造体の静電気による駆動方法を説明するための断面図である。
【図11】光学多層構造体の静電気による他の駆動方法を説明するための断面図である。
【図12】光学多層構造体の静電気による更に他の駆動方法を説明するための断面図である。
【図13】光学多層構造体の磁気による駆動方法を説明するための断面図である。
【図14】光スイッチング装置の一例の構成を表す図である。
【図15】ディスプレイの一例の構成を表す図である。
【図16】ディスプレイの他の例を表す図である。
【図17】ペーパー状ディスプレイの構成図である。
【図1】本発明の一実施の形態に係る光学多層構造体の間隙部が「λ/4」のときの構成を表す断面図である。
【図2】図1に示した光学多層構造体の間隙部が「0」のときの構成を表す断面図である。
【図3】図1に示した光学多層構造体の製造工程を説明するための断面図である。
【図4】図3の工程に続く工程を説明するための断面図である。
【図5】光学アドミッタンスダイアグラム上で、n2 の屈折率を持つ透明な第2の層が、ダイアグラム上の(1,0)の点 (空気のアドミッタンス) を通る軌跡を表す図である。
【図6】図1の光学多層構造体の変形例を表す図である。
【図7】図1に示した光学多層構造体の一具体例の反射特性を表す図である。
【図8】図7の例の低反射時の光学アドミッタンスを説明するための図である。
【図9】図1の光学多層構造体の更に他の変形例を説明するための断面図である。
【図10】光学多層構造体の静電気による駆動方法を説明するための断面図である。
【図11】光学多層構造体の静電気による他の駆動方法を説明するための断面図である。
【図12】光学多層構造体の静電気による更に他の駆動方法を説明するための断面図である。
【図13】光学多層構造体の磁気による駆動方法を説明するための断面図である。
【図14】光スイッチング装置の一例の構成を表す図である。
【図15】ディスプレイの一例の構成を表す図である。
【図16】ディスプレイの他の例を表す図である。
【図17】ペーパー状ディスプレイの構成図である。
Claims (2)
- 前記透明導電膜は、ITO,SnO2 およびZnOのうちのいずれかにより形成されたものである
ことを特徴とする請求項9記載の光学多層構造体。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001212251A JP4032216B2 (ja) | 2001-07-12 | 2001-07-12 | 光学多層構造体およびその製造方法、並びに光スイッチング素子および画像表示装置 |
CNB028025008A CN1266509C (zh) | 2001-07-12 | 2002-07-12 | 光学多层结构体及其制造方法、光学开关装置和图像显示装置 |
PCT/JP2002/007124 WO2003007050A1 (en) | 2001-07-12 | 2002-07-12 | Optical multilayer structure and its production method, optical switching device, and image display |
EP02746024.5A EP1406109B1 (en) | 2001-07-12 | 2002-07-12 | Optical multilayer structure and its production method, optical switching device, and image display |
KR1020037003395A KR100937839B1 (ko) | 2001-07-12 | 2002-07-12 | 광학 다층 구조체 및 그 제조 방법, 및 광스위칭 소자 및화상 표시 장치 |
US10/380,224 US6850365B2 (en) | 2001-07-12 | 2002-07-12 | Optical multilayer structure and its production method, optical switching device, and image display |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001212251A JP4032216B2 (ja) | 2001-07-12 | 2001-07-12 | 光学多層構造体およびその製造方法、並びに光スイッチング素子および画像表示装置 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2003029169A JP2003029169A (ja) | 2003-01-29 |
JP2003029169A5 true JP2003029169A5 (ja) | 2004-08-26 |
JP4032216B2 JP4032216B2 (ja) | 2008-01-16 |
Family
ID=19047443
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2001212251A Expired - Fee Related JP4032216B2 (ja) | 2001-07-12 | 2001-07-12 | 光学多層構造体およびその製造方法、並びに光スイッチング素子および画像表示装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US6850365B2 (ja) |
EP (1) | EP1406109B1 (ja) |
JP (1) | JP4032216B2 (ja) |
KR (1) | KR100937839B1 (ja) |
CN (1) | CN1266509C (ja) |
WO (1) | WO2003007050A1 (ja) |
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