TWI321854B - Transflective pixel structure and fabricating method thereof - Google Patents

Description

WP9509-C400-Q558 22264twf.doc/n IX. Description of the invention: [Technical field to which the invention pertains] θ The present invention relates to a halogen structure and a method of manufacturing the same, and in particular to a transflective 昼Transflective structure and its manufacturing method. [Prior Art] With the dramatic advancement of computer performance and the development of the Internet and multimedia technologies, most of the transmission of video information has been converted from analog to digital. In order to cope with the modern lifestyle, the size of video or video devices has become thinner and lighter. Conventional cathode ray tube (CRT) displays have always dominated the display market in recent years due to their excellent display quality and economy. However, for individuals who operate most terminal/display devices on the table's or from an environmental point of view, if there is a trend to save energy, cathode ray tubes still have many problems due to space utilization and energy consumption. For light, thin, short, small and low power consumption products can not effectively provide solutions. Therefore, the flat panel display developed with optoelectronic technology and semiconductor manufacturing technology (Flat Pand

Display), such as Liquid Crystal Display (LCD), Organic Light Emitting Diode (OLED) or Plasma Display Panel (PDP), has gradually become the mainstream of display products. As mentioned above, in terms of liquid crystal display, depending on the type of light source, it can be roughly classified into a reflective liquid crystal display (Reflective LCD), a transmissive liquid crystal 1321854 WP9509-C400-055B 22264twf.doc/n display (Transmissive LCD). And three types of transflective liquid crystal displays. Taking a transmissive or transflective liquid crystal display as an example, it is mainly composed of a liquid crystal panel and a black light module (B/L). The liquid crystal injected in the liquid crystal panel does not emit light itself, so it is necessary to illuminate the liquid crystal panel through the light source provided by the backlight module to achieve the display effect of the liquid crystal display. φ Fig. 1 is a schematic view of a conventional transflective liquid crystal display panel. Referring to FIG. 1, the liquid crystal display panel 100 includes an upper substrate 110, a lower substrate 120, a transflective plate 130, a liquid crystal layer 140, a pixel electrode 150, and a common electrode 160. The upper substrate 11A is opposed to the lower substrate 12A, the liquid crystal layer 140 is disposed between the upper substrate 110 and the lower substrate 120, and the semi-transmissive semi-reflective plate 130 is disposed on the lower substrate 120. Further, a halogen electrode 150 is disposed on the transflective plate 130. The halogen electrode 15A and the common electrode 160 disposed on the upper substrate 110 are used to modulate the arrangement of the liquid crystal layer 14A. In addition, the 'half-through half-reflection plate 130 allows the outside light to be partially reflected' to also penetrate part of the light supplied by the moon light source (not shown). Thus, the liquid crystal display panel 100 can have both a transmissive and a reflective display mode. However, limited to the transflective sheet 130, the light transmittance and reflectance of the liquid crystal display panel are not high. In addition, if the multi-shirt display is to be performed, color shading needs to be provided on the upper substrate 110. Film 170. Therefore, the liquid crystal display panel 100 often has a situation in which the brightness is insufficient and the backlight utilization rate is low. Fig. 2 is a view showing a conventional transflective liquid crystal display panel of WP9509-C400-05 58 22264twf.doc/n. Referring to FIG. 2, the liquid crystal display panel 200 includes an upper substrate 210, a lower substrate 220, a liquid crystal layer 240, a halogen electrode 250, and a common electrode 260. The components of the liquid crystal display panel 200 are similar to those of the liquid crystal display panel 1 , 0, and thus similar symbols are not described herein. The difference is that, in the liquid crystal display panel 200, a portion of the lower substrate 220 is further provided with a reflective plate 230 to define the reflective region R' and the region where the reflective plate 230 is not disposed is the through region T. The liquid crystal layer 240 is disposed between the upper substrate 21A and the lower substrate 220. The liquid crystal display panel 200 has a reflective display mode and a transmissive display mode, and when displayed in the reflective display mode alone, display can be performed only in the reflective region R. On the other hand, if the display is performed in the transmissive display mode alone, only the penetration region τ can be displayed in the liquid crystal display panel 200. In short, in the single display mode, the opening ratio of the liquid crystal display panel 2 is not good, which results in poor utilization of the backlight light of the liquid crystal display panel 2 and poor display performance. Similarly, when a colorful display is desired, a color filter film 270 is added to the upper substrate to limit the light/transmission rate and affect the display effect. 'Tooth In order to make the semi-transparent and semi-reflective crystal display (4) f light source utilization rate and aperture ratio to present a better display effect, the current semi-liquid crystal display device still needs to be improved. SUMMARY OF THE INVENTION The backlight utilization of the manufacturer of the a-structure is provided by the present invention to provide a transflective liquid crystal display and an aperture ratio. The present invention provides a material aggregate structure to solve the problem of half 1321854 WP9509-C400-0558 22264twf.doc/n

Penetrating semi-reflective liquid crystal displays show poor performance. The present invention proposes a method of fabricating a transflective semi-reflective halogen structure. First, a gate layer is formed on the substrate. Next, a gate pad layer is formed on the substrate, and the gate insulating layer covers the gate layer. Then, a channel layer is formed on the gate insulating layer, and the channel layer is located above the gate layer. A semi-transmissive conductive layer is formed on a portion of the gate layer and a portion of the gate insulating layer. The semi-transmissive conductive layer includes a source, a drain, and a first-half through film connected to the drain. . Thereafter, a protective layer is formed on the semi-f conductive layer and a portion of the channel layer. And, a second semi-transmissive film is formed on a partial region of the protective layer, wherein the second semi-transmissive film is located above the first semi-transmissive film. In the embodiment of the present invention, the material of the semi-transmissive conductive layer described above is a sentence.

In an embodiment of the invention, the second semi-transmissive film comprises a conductive layer, and the material of the conductive layer comprises silver or a silver alloy. In addition, the manufacturing method of the transflective semiconductor structure further includes forming a first opening in the protective layer. In an embodiment of the invention, the gate layer is formed, and the capacitor lower electrode is formed on the substrate, wherein the capacitor lower electrode and the first-half through-film form, for example, a storage capacitor. In an embodiment of the invention, after forming the channel layer, an upper surface including the = channel layer is ion doped to form an ohmic contact layer. The present invention further proposes a reflective halogen structure. A transflective half-transparent semi-reflective pixel structure suitable for being disposed on a substrate comprises a gate 1321854 WP9509-C400-0558 22264twf.doc/n layer, a gate insulating layer, a channel layer, and a semi-transmissive conductive layer a layer, a protective layer, and a second semi-transmissive film. The gate layer is disposed on the substrate and the gate insulating layer is also disposed on the substrate and the gate layer covers the gate layer. The channel layer configuration i is above the closed layer. The semi-transmissive conductive layer is disposed on the moving region of the pass and the partial region of the ship's edge layer. The lang is disposed on the semi-transmissive conductive layer and part of the channel layer, and is disposed on a portion of the layer. Wherein, the semi-transmissive conductive layer comprises a m-pole and a first-half penetrating film connected to the electrodeless electrode. The membrane is placed above the first semi-penetrating membrane. Tooth Permeation In one embodiment of the invention, the above includes silver. Further, the first semi-transmissive film is, for example, between 10 and 6 G, and the thickness of the second semi-transmissive film is also, for example, between 〇 6 6 = ΐ ΐ Γ Γ 施 施 施 施 施 施 施 施 施 施 施 施 施The second half penetrates and includes a &quot;, the above protective layer has, for example, a first opening &quot;^ is electrically connected to the conductive layer by the conductive layer. Further, the material includes silver or a silver alloy. The material of the H-conducting layer includes a solid _ towel, and the semi-material beam-like material structure further includes an electric valley lower electrode, which is arranged on the US board. The structure is arranged in the US board. </ br>, the lower electrode and the second embodiment of the invention, the material of the protective layer is, for example, a dielectric material including oxidized stone, cerium nitride or nitrous oxide. In this = 1321854 22264twf.doc/i

WP9509-C400-0558 In one embodiment, when the material of the protective layer is cerium oxide (SiO 2 ), the thickness of the protective layer may be, for example, 5 to 120 nm, 120 to 145 nm β, and 145 to 190. The thickness of the three kinds of nanometers is such that the light passes through the semi-transparent semi-reflective halogen structure and appears blue, green and red, respectively. On the other hand, when the material of the protective layer is tantalum nitride (Si3N4), the thickness of the protective layer is, for example, tuned to 5 to 70 nm, 7 to 95 nm, and 95 to 12 nm. The degree 'to make the light pass through the semi-transparent semi-reflective halogen structure and then present the green sputum and the red color respectively, and the present invention further proposes a manufacturing method of the transflective halogen structure. The steps are as follows. Subtract, forming a gate layer on the substrate. In addition, a gate insulating layer is formed on the substrate, and the gate insulating layer covers the gate layer. Next, a channel layer is formed on the gate insulating layer, and the channel layer is located above the gate electrode. Furthermore, a metal layer is formed on a portion of the channel layer, and the metal layer includes the source and the material H, and a half-through is formed on the channel layer = and a portion of the gate insulating layer: ==7 pole and The pole-semi-transparent film of the pole connection is ί =, and the metal layer and the metal layer correspond to the two sides of the interlayer layer, respectively. -16, the smectic layer, the semi-transmissive conductive layer and a portion of the channel layer form a second semi-transparent film on a portion of the first layer: Τ first + wear gamma tilt - semi-through the dragon. - In an embodiment of the invention, the inscription, or the axis m, the above == quality includes silver. Material of U-tooth conductive layer In one embodiment of the present invention, the second semi-transparent film includes - 1321854

WP9509-C400-0558 22264twf.doc/n Conductive layer. In addition, the manufacturing method of the transflective semiconductor structure further includes forming a first opening in the protective layer to electrically connect the conductive layer to the drain. In an embodiment of the invention, the forming the conductive layer further comprises forming an auxiliary data wiring on a portion of the protective layer such that the auxiliary data wiring is above the metal layer. Further, in the manufacturing method of the transflective halogen structure of the present invention, the second opening may be formed in the protective layer so that the auxiliary data wiring is electrically connected to the data wiring through the second opening. In an embodiment of the invention, the material of the conductive layer comprises silver or a silver alloy. In an embodiment of the invention, a capacitor lower electrode is formed on the substrate while forming the gate layer, wherein the capacitor lower electrode and the first semi-transmissive film form a storage capacitor. In an embodiment of the invention, after the channel layer is formed, ion-doping is further performed on the upper surface of the channel layer to form an ohmic contact layer. Based on the above-described manufacturing method of the transflective pixel structure, the Γ 料 料 枝 , , , , , , , , , , , , , , , , , , , 基 基 基 基 基 基 基 基 基 基 基 基 基 基 基 基 基 基The layer is disposed on the substrate and on the gate and covers the gate layer. Channel layer configuration The n channel layer is above the closed layer. The metal layer is disposed on the through-field, and the metal layer of the towel is disposed in a portion of the channel layer and the portion of the closed insulating layer 2d. The semi-transmissive conductive layer includes the drain and the fish. The first half of the domain, the X-ray connection, penetrates 12 ^ 9509-0400-0558 22264 twf.doc / n film ' and trans-penetrate the conductive layer and the metal layer respectively correspond to the side. Further, the protective layer is disposed on a portion of the metal layer and the half-layer: two layers. In addition, the second semi-transmissive film is disposed on the area where the second semi-transmissive film is located in the first half of the semi-transparent and semi-reverse paint of the present invention, and the film and the first-half-through The structure of the sandwich-protective layer between the membranes is shown. At the same time, the transflective semi-reflection of the present invention === = the reflective plate can have both reflective and transmissive two-energy = this semi-transparent semi-reflective halogen-removing semi-reflective pixel The above and other objects, features and advantages of the structure are saved as follows. The preferred embodiment of the temple is described in detail with reference to the accompanying drawings. [Embodiment] FIG. 3G is a manufacturing method of the transflective structure of the preferred embodiment of the present invention. Referring first to FIG. 3A, the substrate 310 is a 'reed layer 32'. . The substrate 31G is, for example, a glass substrate. The formation of the heart is, for example, first depositing a layer of a film by a thin film deposition process, (3) not on the substrate 31, and then using a lithography and etching process 1321854 WP9509-C400-0558 22264twf.d〇c/n A gate metal layer (not shown) is patterned to obtain a gate layer 320. A capacitor lower electrode 322, which is located on one side of the gate layer 320, may be formed on the substrate 310 while forming the gate layer 320. Next, referring to FIG. 3B, after the gate layer 320 is formed, a gate insulating layer 330' is formed on the substrate 310. As shown in FIG. 3B, the gate insulating layer 330 covers the gate layer 320 and the capacitor lower electrode 322. The gate insulating layer 330 is formed by, for example, depositing a dielectric material on the substrate 310 by chemical vapor deposition (CVD). Further, the material of the gate dielectric layer 330 is, for example, a dielectric material such as hafnium oxide, tantalum nitride or hafnium oxynitride. Referring to FIG. 3C', a channel layer 340' is formed over the gate insulating layer 330 and a channel layer 340 is formed over the gate layer 320. The channel layer 340 is formed by, for example, chemical vapor deposition (CVD) deposition of germanium on the gate insulating layer 330 to form an amorphous layer (not shown in green), or further Laser annealing is performed on the crystal layer (not shown) to form a polycrystalline germanium layer (not shown). Further, a lithography process is performed to pattern the amorphous germanium layer or the poly germanium layer to form a channel layer 340 over the gate layer 320. In general, in order to reduce the contact resistance between the source/drain and the gate in the thin film transistor, for example, a doping process can be performed on the surface of the channel layer 340 to form an ohmic contact on the surface of the channel layer 340. Layer 342 (shown in Figure 3D). Then, referring to FIG. 3E, a semi-transmissive conductive layer 36A is formed on a partial region of the channel layer 340 and a partial region of the gate insulating layer 330. Wherein, 14 &lt; S ) 1321854 WP9509-C400-0558 22264twf.doc / n The semi-transmissive conductive layer 360 is formed by depositing a silver metal or a silver alloy on the channel layer 34 by a thin film deposition process such as sputtering. And a portion of the edge layer 330 above. Thereafter, a patterning process is performed to expose portions of the silver metal layer or silver alloy layer and a portion of the ohmic contact layer located above the gate layer 320 to portions of the channel layer 340. The semi-transmissive conductive layer 360 includes a source 362, a drain 364, and a first semi-transmissive film 366 to which the drain 364 is connected. As can be seen from Fig. 3E, a portion of the first transparent film 366 and the lower capacitor electrode 322 constitute a storage Cst. % Next, as shown in Fig. 3F, a protective layer 370 is formed on the semi-transmissive conductive layer 36A and the partial channel layer 340. The protective layer 37 is, for example, a dielectric film layer such as cerium oxide, cerium nitride or nitrogen oxynitride formed by chemical vapor deposition. Thereafter, referring to FIG. 3G, a second semi-transparent film 380 is formed on a partial region of the protective layer 370, wherein the second semi-penetrating flaw is located above the first + through film 366. In the present embodiment, the second semi-transmissive film 38 is formed by depositing a silver metal layer on the protective layer 37, for example, by a thin film deposition process, and then performing a lithography. The process patterns the silver metal layer 'to cover the silver metal layer over a portion of the protective layer 37〇. In addition, in order to further avoid the problem that the conductive layer 382 is floating, the present embodiment can form a first opening si in the protective layer 37G, and the conductive layer 382 can be electrically connected to the pole 364 through the first opening S1. Since the conductive layer 382 is electrically connected to the drain 364, the conductive layer 382 functions as a halogen electrode that applies a voltage of the liquid crystal layer. 1321854

WP9509-C400-0558 22264twf.doc/n As shown in FIG. 3G, the halogen structure 300 of the present embodiment is suitable for being disposed on a substrate 310' and the halogen structure 300 includes a gate layer 320, a gate insulating layer 330, and a channel layer. 340. A semi-transmissive conductive layer 360, a protective layer 370, and a second semi-transmissive film 380. The gate layer 320 is disposed on the substrate 31, and the gate insulating layer 330 is also disposed on the substrate 310, and the gate insulating layer 33 covers the gate layer 320. And the channel layer 340 is disposed on the gate insulating layer 330, and the channel layer 340 is located above the gate layer 320. In addition, the semi-transmissive conductive layer 360 is disposed on a portion of the channel layer 340 and a portion of the gate insulating layer 330. The semi-transmissive conductive layer 36 includes a source 362, a gate 364, and a drain 364. The first half penetrates the film 366. The protective layer 370 is disposed on the semi-transmissive conductive layer 360 and the partial channel layer 340. Further, the second semi-transmissive film 380 is disposed on a portion θ portion of the protective layer 37A, wherein the second semi-transmissive film 380 is located above the first semi-transmissive film 366. In the present embodiment, the surface of the channel layer 340 has an ohmic contact layer 342. The ohmic contact layer 342 is formed by, for example, performing an ion doping process on the upper surface of the channel layer 340. The contact impedance between source 362 (record 364) and gate layer 320 is reduced. Further, the first through film 380 is, for example, a conductive layer 382. Further, the protective layer 3 has, for example, a first opening S1 such that the semi-transmissive conductive layer can be electrically connected to the conductive layer 382 through an opening S1. Moreover, the material f of the 360 and the conductive layer 382 includes silver, a silver alloy or other materials: the thickness of the 'and the pole 364 is, for example, between 1 and 2 〇〇. The thickness of the film 366 is, for example, between 1 Qm of the tooth permeable membrane 380. The thickness is also, for example, between 1 〇 and 6 〇 nanometers. - WP9509-C400-0558 22264twf.doc/n In the embodiment, the halogen structure 3GG further includes a lower electrode 322 ′ disposed on the substrate 310, wherein a portion of the lower electrode 322 and the film 366 form a cavity Transparency = effectively maintains the voltage of the halogen electrode, which helps to maintain the quality of the two sub- = stable. . It is understood that the second half penetrates the film 38〇 and the ^ = protective layer 37. An optical splicing film: film 38 can be constructed. The effect of the first-semi-penetrating film 366 and the protection I interfere with the interference. Under such interference, if the film thickness of the second: Γ〇0! is adjusted, the wavelength of the optical filter film 390, ▲ can be adjusted. The location and the color it displays. In other words, by adjusting the deposition thickness of the protective layer 370, the display of the halogen structure can be made colorful. Specifically, in order to exhibit good display quality, the thickness of the protective layer 37 (dielectric film layer) is different depending on the actual demand and the material thereof, for example. For example, the protective layer 370 is made of cerium oxide (Si〇2). When the thickness of the protective layer 37〇 is between 5 and 120 nm, the light can be blue after passing through the halogen structure, and When the thickness is between 120 and 145 nm, the light can be made green after passing through the pixel structure 300; in addition, the thickness of the film is between 145 and 19 nanometers, and the light can be red after passing through the halogen structure 300. Furthermore, taking the protective layer 370 made of nitriding cerium (Si#4) as an example, when the thickness of the protective layer 370 is between 5 and 70 nm, the light can pass through the 昼-structure 3 〇〇 and then appear blue; Its thickness is between 70 and 95 nm, which makes the light appear green after passing through the alizarin structure 300. In addition, the thickness of the film is between 95 and 120 nm to allow light to pass through the 17 1321854 WP9509-C400-0558 22264twf.doc The /n pixel structure 300 appears red. Of course, the protective layer 370 can also be made of other materials, such as bismuth oxynitride. When the halogen structure 300 is applied to a liquid crystal display panel, it is not necessary to add δ and color, and the light film can be displayed in an colorful manner. In this way, not only the manufacturing process and the cost of the color filter film can be omitted in the production process, but also the display effect of the liquid crystal panel is not affected by the absorption effect of the color filter on the light.

When tantalum nitride is used as the material of the protective layer 370, the relationship between the wavelength of the light and the transmittance of the pixel structure of the present invention which is simulated is shown in Fig. 4, Fig. 4, and Fig. 4C. Please refer to FIG. 4Α, 4Β and 4C at the same time, photon; the transmittance of the light film 390 to red light, green light and blue light can reach about 70%, about 80% and about 75%, respectively (such as curves 41〇, 42〇). And 43〇). It can be seen that the light of each color can maintain a high transmittance after passing through the optical filter film 39. Further, each film layer of the optical filter film 390 in the 'halogen structure 300 is

It is composed of the relevant film layer in the active device, so that the conductive film layer in the optical filter film does not couple with other conductive film layers, and a parasitic capacitance is not necessary. On the other hand, the optical filter film 39 is made compatible with the existing process, so that the manufacturing cost is not increased, and the manufacturing process is not complicated. Θ ^ It should be noted that the design of the germanium structure 3〇〇 of the present invention also contributes to the use of the backlight. Fig. 5 is a diagram showing the use of the pixel structure of the present invention = the backlight utilization of the liquid crystal display. Referring to FIG. 5, the backlight module 5〇〇35 is placed under the liquid crystal display panel 51G, and the liquid is displayed.

18 S 1321854 WP9509-C400-0558 22264twf.doc/n The display panel 510 has a plurality of pixel structures (512A, 512β, and 512c). The respective pixel structures (512A, 512B, and 512C) are, for example, various types of halogen structures of the above embodiments. The backlight module 500 can provide sufficient light sources for each of the pixel structures (512A, 512B, and 512C) for the transmissive display mode. The color displayed by the halogen structure 512A is, for example, red, the color displayed by the halogen structure 512B is, for example, green, and the color displayed by the halogen structure $DC is, for example, blue. When the light 52 emitted by the backlight passes through the book structure 512B, the light of various wavelengths in the light 520 is filtered by the action of the optical filter film in the pixel 512B, so that part of the green light 522 can be The remaining band ray 524, which cannot pass through the pixel structure 512B, is reflected by the pixel structure 512B. In other words, the inverse 524 is composed of red light, blue light and partial green light that have not passed through the halogen structure 512b. In the ray 524, a portion of the light 526 is directly reflected and passes through the pixel structure 512B again. In addition, some of the light 528 is reflected and transmitted laterally, and then passes through other halogen structures (512A or 5i2c). As a result, the light 526 will help to enhance the green light display effect of the pixel structure 512b, while the light 528 will help to enhance the red light and blue light display effects of the pixel structure 512A and the pixel structure 512C, respectively. Overall, the light utilization efficiency of the backlight module 500 can be greatly improved. In order to fabricate the data wiring together with the source and use other metals to make the data wiring, the present invention proposes another method for fabricating a semi-transflective halogen structure. Among them, the steps of fabricating the data wiring and the source metal layer are independent from the manufacturing steps of the semi-transmissive conductive layer. At the same time, the data wiring and the source are made of other metal materials to enhance the display effect of the liquid crystal display panel 13 1321854 22264twf, d〇c/n WP9509-C4〇〇.〇558 display panel. The details of the manufacturing steps are described below. 6A to 61 are views showing a manufacturing method of a transflective semiconductor structure according to another preferred embodiment of the present invention. The fabrication steps of Figs. 6A to 6D are, for example, the same as those of Figs. 3A to 3D of the above embodiment, and are not described herein. The fabrication of the semi-reflective semi-transparent pixel structure portion member has been completed on the substrate 610 until the step of Fig. 6D. Among these, these members include a gate layer 620, a gate insulating layer 630, a channel layer 640, and an ohmic contact layer 650 on the surface of the channel layer 640. In addition, one side of the gate layer 620 further includes a capacitor lower electrode 622. Next, referring to FIG. 6E, a metal layer 662 is formed on a portion of the via layer 64, wherein the metal layer 662 encapsulates the source 662A and the data wiring 662B. The metal layer 662 is formed by depositing aluminum, molybdenum metal or aluminum molybdenum alloy on the channel layer 640 by a thin film deposition process, and then patterning the aluminum, molybdenum metal layer or aluminum molybdenum alloy layer to form the source 662A and Data wiring 662B. Accordingly, referring to FIG. 6F, a semi-transmissive conductive layer 664 is formed on a portion of the channel layer 640 and a portion of the gate insulating layer 630. The 'semi-transmissive conductive layer 664 includes a 汲_pole 664A and a first semi-transparent 臈664B connected to the eliminator 664A. In the present embodiment, the semi-transmissive conductive layer 664 is formed by, for example, forming a silver metal layer (not shown) in a clock-stop manner and then patterning a silver metal layer (not shown) to form a semi-transparent. Conductive layer 664. Essentially, the semi-transmissive conductive layer 664 and the metal layer 662 are individually corresponding to both sides of the gate layer 620. In addition, while the source 662A and the drain 664A are formed, the IGBT etches a portion of the ohmic contact layer 650.

20 1321854

WP9509-C400-0558 22264twf.doc/n is used to expose portions of the channel layer 640. Wherein, the thickness of the &amp; pole 664A is, for example, between 10 and 200 nm, and the thickness of the whistle is 4,000, and the thickness of the 牙 + 064B is, for example, between 10 and 60 nm. In more detail, the first semi-transmissive film 664β_sub-region, the square capacitor lower electrode 622 will constitute a storage capacitor (5). The memory capacitor can effectively maintain the voltage of the pixel electrode when it is displayed on the liquid crystal display.

Then, referring to FIG. 6G, a protective layer 67A is formed on the metal layer 662, the semi-transmissive conductive layer 664, and the partial channel layer 640. The protective layer 67 is formed by depositing a dielectric film such as hafnium oxide or hafnium oxynitride on the metal layer 662, the semi-transmissive conductive layer 564, and the partial channel layer 640 by chemical vapor deposition.

Furthermore, referring to FIG. 6H, a second semi-transparent film 682 is formed on a portion of the protective layer 67A, wherein the second semi-transmissive film 682 is located above the first penetrating film 664B. The second semi-transmissive film 682 includes a conductive layer 682a, and the conductive layer 682A is made of silver or a silver alloy. Further, the thickness of the second semi-transmissive film 380 is, for example, between 1 〇 and 6 〇 nanometers. Because the second semi-transmissive film 682 has conductivity, in order not to float, a first opening S1 (shown in FIG. 6H') can be formed in the protective layer 670 to pass the conductive layer 682A through the first The opening S1 is electrically connected to the drain 664A.

Further, referring to Fig. 61', while forming the conductive layer 682, for example, the auxiliary data wiring 682B is formed on a portion of the protective layer 670 so that the auxiliary data wiring 682B is positioned above the metal layer 662. At the same time, a second opening S2' is formed in the protective layer 670 to electrically connect the auxiliary data wiring 682B 21 '':S) 1321854 WP9509-C400-0558 22264twf.doc/n to the data wiring 662B. Auxiliary data wiring 6826 and data distribution line 662B simultaneously transmit data signals, which will help improve the efficiency of data transmission. Referring to FIG. 61', the semi-reflective semi-transmissive halogen structure 600 disposed on the substrate 61 includes the following components: a gate layer 62, a gate insulating layer 63, a channel layer 640, a metal layer 662, and a semi-transmissive conductive layer. Layer 664, protective layer 670, and first semi-transmissive film 682. The gate layer 620 is disposed on the substrate 610, and the gate insulating layer 630 is also disposed on the substrate 61, and the gate insulating layer 62 is overlying the gate layer 610. The channel layer 64 配置 disposed on the gate insulating layer 62 is located above the gate layer 620. Further, a metal layer 662' is disposed above one side of the channel layer 64, and a semi-transmissive conductive layer 664 is disposed above the other side. The metal layer 662 includes a source 662A and a data wiring 662B, and the semi-transmissive conductive layer 682 includes a drain 664A and a first semi-transmissive film 664B overlying a portion of the gate insulating layer 630. The protective layer 670 is disposed on a portion of the metal layer 662, the semi-transmissive conductive layer 664, and the channel layer 640. And the second semi-transmissive film 682 disposed on a partial region of the protective layer 670 is located above the first semi-transmissive film 664B. In the present embodiment, the material of the metal layer 662 includes aluminum, molybdenum or an aluminum alloy; and the material of the semi-transmissive conductive layer 664 includes silver or a silver alloy. Wherein, the thickness of the drain 664A is, for example, 1 〇 to 2 〇〇 nanometer, the thickness of the first semi-transmissive film 664B is, for example, 1 〇 to 6 〇 nanometer, and the thickness of the second semi-transmissive film 682 is, for example, Between 1〇~6〇 nano. The first through-film 664B, the second semi-transmissive film 682, and the protective layer 670 sandwiched therebetween form, for example, an optical filter film 69. The optical filter film 22 S ) 1321854 WP9509-C400-0558 22264 twf.doc/n 690 has the same function as the optical filter film 39 上述 of the above embodiment, that is, the ruthenium structure can be made by the action of the film interference. 〇〇 presents a colorful display. In detail, adjusting the film thickness of the protective layer 670 allows the halogen structure 600 to display red, green, and blue, and the film thickness is designed to be the same as the film thickness of the protective layer 370 of the above embodiment, here. Will not repeat them. The second semi-transmissive film 682 includes a conductive layer 682A. At the same time, the first opening si in the protective layer 670 causes the conductive layer 682A to be connected to the first semi-transmissive film 664B through the first opening S1 to prevent the conductive layer 682A from floating. In addition, in order to further reduce the impedance of the data line 662B, the auxiliary data line 682B is disposed above the metal layer 662, and the auxiliary data line 682B is electrically connected to the data line 662B through the second opening S2 in the protective layer 670. . In addition to the advantages of the pixel structure 600, the pixel structure 600 and the source 662A are made of a metal layer 662, which makes the transmission of the data signal more accurate. In addition, the configuration of the auxiliary data distribution line 682B can further improve the performance of the liquid crystal display panel. Furthermore, the halogen structures (3〇〇 and 600) of the present invention can be arrayed on a substrate, for example, in a plurality of different manners to form an active device array substrate. The manner in which the array of the halogen structures (300 and 600) is arranged on the substrate includes a stripe type, a mosaic type, a triangular type, and the like. In summary, the manufacturing method of the transflective halogen structure of the present invention and its halogen structure have at least the following advantages: 1. The manufacturing method of the transflective pixel structure of the present invention In the structure of the element, by adjusting the thickness of the protective layer, the pixel structure of the invention can be made red, Light of a specific color such as blue or green. 2. The method for producing a transflective pixel structure of the present invention. The fabrication of the optical filter film is compatible with existing processes. Therefore, there is no burden on the manufacturing cost and the manufacturing steps are not complicated. 3. The manufacturing method of the transflective halogen structure of the present invention and the pixel structure thereof do not need to be provided with a reflecting plate, so that the liquid crystal display panel can have a high aperture ratio. • The colorful display of the transflective halogen structure of the present invention is not achieved by the color filter film, so the brightness of the image is not affected by the absorption of the color light-transmissive film. 5. The semi-transparent and semi-reflective halogen structure of the present invention can effectively utilize the light of the backlight to further enhance the display effect. The present invention has been disclosed in the above preferred embodiments, and is not intended to limit the scope of the present invention, and may be modified by those skilled in the art without departing from the spirit and scope of the invention. And Rundu, the scope of protection of this invention is subject to the definition of the scope of the patent application. [Simple description of the drawing] ® 1 is a schematic diagram of a conventional transflective liquid crystal display panel. Figure 2 is a diagram of another transflective liquid crystal display panel of the prior art. 3A to 3G illustrate a method of fabricating a transflective structure of a transflective half 24 1321854 WP9509-C400-0558 22264 twf.doc/n according to a preferred embodiment of the present invention. 4A, 4B and 4C show the relationship between the wavelength of the light wave and the transmittance. Fig. 5 is a view showing the use of a backlight of a liquid crystal display to which the halogen structure of the present invention is applied. 6A through 61 illustrate a method of fabricating a transflective pixel structure in accordance with another preferred embodiment of the present invention. [Main component symbol description] 100, 200: liquid crystal display panel 110, 210: upper substrate 120, 220: lower substrate 130: transflective reflector 140, 240: liquid crystal layer 150, 250: pixel electrodes 160, 260: Common electrodes 170, 270: color filter films 300, 512A, 512B, 512C, 600: halogen structures 310, 610: substrate 320' 620: gate layers 322, 622: capacitor lower electrodes 330, 630: gate insulating layer 340 640: channel layer 342, 650: ohmic contact layer 25 1321854 WP9509-C400-0558 22264twf.doc/n 360, 664: semi-transmissive conductive layer 362, 662A: source 364, 664A: no pole 366, 664B: Half of the penetrating film 370, 670: protective layer 380, 682: second semi-transmissive film 382, 682A: conductive layer 390, 690: optical filter film 410, 420, 430: curve 500: backlight module 510: liquid crystal Display panel 520, 522, 524, 526, 528: light 662: metal layer 682B: auxiliary data wiring

Cst : storage capacitor R · reflection area 51 : first opening 52 : second opening T : penetration area 26

Claims (1)

1321854 WP9509-C400-0558 22264twf.doc/n X. Patent Application Range: 1. A method for manufacturing a transflective halogen structure comprising: forming a gate layer on a substrate; forming on the substrate a gate insulating layer, and the gate insulating layer covers the gate layer; a channel layer is formed on the gate insulating layer, and the channel layer is located above the gate layer; Forming a semi-transmissive conductive layer on a portion of the channel layer and a portion of the gate insulating layer, wherein the semi-transmissive conductive layer includes a source, a drain, and a first half of the drain connected to the drain Forming a protective layer on the semi-transmissive conductive layer and a portion of the channel layer; and forming a second semi-transmissive film on a portion of the protective layer, wherein the second semi-transmissive film is located The first half penetrates the membrane. 2. The transflective pixel as described in claim 1 of the patent scope The manufacturing method of the structure, wherein the material of the semi-transmissive conductive layer comprises silver or silver. 3. The method of manufacturing a transflective louver structure according to claim 1, wherein the second semi-transmissive film comprises - electrically conductive. 4. If f is the half of the third item of the patent scope The manufacturing method of penetrating the semi-reflective halogen, further comprises a shaft-first opening in the layer of the layer, so that the conductive layer is electrically connected to the gate.结:制======素 27 1321854 WP9509-C400.Q558 22264twf.doc/n 6·The semi-transparent and semi-reflective drawing described in the first paragraph of the patent application '•. The manufacturing method of the structure further comprises forming a capacitor lower electrode on the slab while forming the gate layer, wherein the capacitor lower electrode and the first semi-through film form a storage capacitor. The method for manufacturing a transflective pixel structure according to claim 1, wherein after forming the channel layer, an ion doping is further performed on the upper surface of the channel S to form a Ohmic contact layer. 8. A semi-transflective halogen structure suitable for use on a substrate. The semiconductor layer is disposed on the substrate. The gate insulating layer is disposed on the substrate. Upper, and the gate insulating layer covers the gate layer; the interlayer layer is disposed on the gate and the insulating layer' and the channel layer is located at the gate layer a protective layer and a semi-pull conductive layer, which are shrouded in a portion of the Wei Dao layer and the layer, wherein the semi-transmissive conductive layer includes a / and a first half of the pole connected to the drain a translucent conductive layer disposed on the semi-transmissive conductive layer and a portion of the channel layer; the film is disposed on a portion of the protective layer, and the scorpion Half penetrated the membrane above. The structure of the semi-transparent semi-reflective pixel/structure described in the structure 91:===, wherein the material of the +-transmissive conductive layer comprises silver or a silver alloy. 10. Semi-transflective 昼 as described in claim 8 28 1321854 WP9509-C400-0558 22264twf.doc/n structure, wherein the thickness of the first semi-transmissive film is between 10 and 60 m. 11. The application of the semi-transparent semi-reflective element structure described in item 8 of the special fiber, wherein the thickness of the second half-through shaft is between 1 G and 6 G nm: between. The transflective bismuth structure of claim 8, wherein the second semi-transmissive film comprises a conductive layer. 13. If the application of the general (4) 12-characteristic structure is applied, the fabric has the semi-electric layer electrically connected to the conductive layer. A transflective structure according to claim 12, wherein the material of the conductive layer comprises silver or a silver alloy. &quot; = If you apply for the special fiber around the 8th excerpt half? The material reflective type includes a capacitor lower electrode disposed on the substrate, wherein the electric valley lower electrode and the first semi-transmissive film form a storage capacitor. 16. The transflective 苎IS according to claim 8 further comprising an ohmic contact layer disposed on the surface of the channel layer. 17 17 semi-penetration as described in claim 8 The material of the cysteine structure 'the material of the towel layer includes dielectric (4). The acoustical acoustical i8· is a semi-transparent and semi-reflective 昼, , Ό, Ό structure as described in the 17th item of the Ganshen patent scope, wherein the protective layer is made of sulphur dioxide. It is expected that (4) 18 red shirts will be reflective. a structure in which the thickness of the protective layer is between 5 and 12 G nanometers, so that the light &lt; s 29 1321854 WP9509-C400-0558 22264 twf.doc/i line passes through the semi-through material color. 20. The transflective halogen structure according to claim 18, wherein the protective layer has a thickness of between 12 G and 145 nm so that the translucent semi-reflection After the pixel structure, it appears green. : 21. The semi-transflective pixel structure described in claim 18, wherein the protective layer has a thickness of 145 to 19 nanometers to allow light to pass through the transflective After the halogen structure, it appears red. The transflective element structure as described in claim 17, wherein the protective layer is made of tantalum nitride. 23. The semi-transflective halogen structure according to claim 22, wherein the protective layer has a thickness of 5 to 7 nanometers, and the line passes through the transflective After the pixel structure, it appears blue. 24. The transflective structure as described in claim 22, wherein the protective layer has a thickness of between 7 〇 and 95 nm to pass the semi-transparent semi-reflective pixel. After the structure, it appears green. 25. The semi-transflected structure of claim 22, wherein the protective layer has a thickness of between 95 and 12 nanometers, wherein the light passes through the semi-transparent semi-reflective element After the structure, the method of producing a semi-transparent semi-reflective halogen structure comprises: forming a gate layer on a substrate; 匕 forming a gate insulating layer on the substrate, and The gate insulating layer covers the gate layer; a channel layer is formed on the gate insulating layer, and the channel layer is located above the pole layer; w S ) 30 ^21854 WP9509-C400-0558 22264twf.d 〇c/n forming a metal layer on a portion of the channel layer, wherein the metal layer comprises a source and a data wiring; forming a portion of the channel layer and a portion of the gate insulating layer - a semi-transmissive conductive layer, wherein the semi-transmissive conductive layer comprises a dipole and a first semi-transmissive film connected to the drain, and the semi-transmissive conductive layer and the metal layer respectively correspond to the gate The two sides of the layer; the metal layer, the semi-transmissive conductive layer, and Forming a protective layer on the channel layer; and forming a second semi-transmissive film on a portion of the protective layer, wherein the second semi-transmissive film is located above the first semi-transmissive film. The method for manufacturing a transflective louver structure according to claim 26, wherein the material of the metal layer comprises or a molybdenum. 28. The semi-wearing as described in claim 26 A manufacturing method of a transflective halogen structure, wherein the material of the semi-transmissive conductive layer comprises silver or a silver alloy. 29. The method for manufacturing a transflective halogen structure according to claim 26 The second semi-transmissive film comprises a conductive layer. 30. The method for manufacturing a transflective halogen structure according to claim 29, further comprising forming a first layer in the protective layer a method for manufacturing a semi-transflective halogen structure according to claim 29, wherein the conductive layer is formed, and further includes Forming an auxiliary data wiring to the protective layer In some areas, the auxiliary data wiring is located above the metal layer. 31 WP9509-C400-0558 22264twf.d〇c/n = material 半 semi-feed reflective 昼 connection 4 wiring through the second opening With the data wiring electron system, 29 items of the semi-transflective 昼 ' 34 m /, the material of the conductive layer includes silver or silver alloy. The semi-transparent and semi-reflective painting of the 26 items of the prime structure The forming of the gate layer is further included in the i-reading heater-valley electrode, wherein the capacitor lower electrode and the first semi-transmissive film form a storage capacitor. 35·If the application is patented (4) The semi-transparent and semi-reflective enthalpy of the first item is: the method of forming &amp; method after forming the channel layer, further comprising - ion doping on the upper surface of the channel layer to form - ohmic contact Floor. 36. A semi-transflective halogen structure suitable for being disposed on a substrate, the transflective halogen structure comprising: a gate layer disposed on the substrate; a gate insulating layer, configured On the substrate, and the gate insulating layer covers the gate layer; the channel layer is disposed on the gate insulating layer, and the channel layer is located above the gate layer; a metal layer is disposed on the channel layer a portion of the region, wherein the metal layer comprises a source and a data wiring; and a half of the conductive layer is disposed on the channel layer and the germanium region of the gate insulating layer, wherein the semi-transmissive conductive layer comprises a Bungee and with 32 1321854 WP9509-C400-0558 22264twf.doc/n One of the first half of the gate is penetrating the film, and the semi-transmissive conductive layer and the metal layer respectively correspond to the two sides of the gate layer; And disposed on the metal layer, the semi-transmissive conductive layer, and a portion of the channel layer; and θ 〇Λ a second semi-transmissive film disposed on a portion of the protective layer, wherein the second A semi-transmissive film is located above the first semi-transparent weir. 37. The transflective substrate structure of claim 36, wherein the material of the metal layer comprises aluminum, molybdenum or an aluminum molybdenum alloy. 38. The transflective halogen structure according to claim 36, wherein the material of the semi-transmissive conductive layer comprises silver or silver. 39. As described in claim 36 The transflective pixel structure is penetrated, wherein the second semi-transmissive film comprises a conductive layer. A community, such as the semi-transparent and semi-reflective type described in claim 39, wherein the protective layer has a first opening to electrically connect the conductive layer to the drain. The surname of the first name is the semi-transparent and semi-reflective screen as described in item 39 of the scope of the towel. The conductive layer further includes an auxiliary data wiring disposed on the square 卩 卩 injury area, and the auxiliary material The wiring is located in the metal layer. Please refer to the semi-transparent and semi-reflective chain of the Beijing-style chain in the 41st item. The Luobaihong--a data-assisted _^^ two openings are located in the protective layer so that The phantom % is deeply connected to the data wiring through the second opening. The semi-transparent and semi-reflective anthraquinone dance described in claim 39 of the patent application, wherein the material of the material includes a silver wire alloy. 33 136 950 264 264 264 264 264 264 264 pp pp pp pp pp pp pp pp pp pp pp pp pp pp pp pp pp pp pp pp pp pp pp pp pp pp pp pp pp pp pp pp pp pp pp pp pp pp pp pp pp pp pp pp pp pp pp pp And the first-half penetrating film constitutes a storage capacitor. The semi-transparent and semi-reflective bismuth region as described in claim 36 further includes an ohmic contact layer, and the portion disposed on the surface of the channel layer is turbulent; 1^' as claimed in item 36 The semi-transparent and semi-reflective type 其中° wherein the material of the protective layer comprises a dielectric material.鈇 47 47 47 47 47 47 47 47 47 47 47 47 47 47 47 47 47 47 47 47 47 47 47 47 47 47 47 47 47 47 47 47 47 47 47 47 47 47 47 47 47 47 47 47 47 47 47 47 47 47 47 47 47 47 47 47 47 47 47 47 47 47 47 47 47 47 47 47 47 47 47 47 47 47 47 47 47 47 47 47 47 47 47 47 47 47 47 47 47 47 47 47 47 47 47 47 The thickness of the protective layer is between 5 and 120 nm, so that the light is half-reflexed and then blue. I. The semi-transflective twilight described in claim 47, wherein the thickness of the protective layer is between 120 and 145 nm, so that the structure is green after the two-pass pixel structure素鈇彳0', as described in claim 47, the transflective 昼 έ 其中 其中 其中 其中 其中 其中 其中 其中 其中 其中 其中 其中 其中 其中 其中 其中 其中 其中 其中 其中 其中 其中 其中 其中 其中 其中 其中 其中 其中 其中 其中 其中 其中 其中 其中 其中The semi-transflective halogen structure is reddish. The semi-transparent and semi-reflective painting described in the 46th item of the patent application, the structure of the protective layer is nitrogen. ##. The semi-transparent semi-reflective rim as described in claim 51, wherein the thickness of the protective layer is between 5 and 70 nm, so that the light is read and transflected. The semi-transparent semi-reflective unitary structure as described in claim 51, wherein the thickness of the protective layer is as shown in claim 51. It is between ~95 nm so that the light passes through the semi-transparent semi-reflective alizarin structure and appears green. 54. The transflective halogen structure as described in claim 51, wherein the protective layer has a thickness of 95 to 120 nm to allow light to pass through the transflective After the structure, it appears red. 35 &lt; S )