JP2013524287A - 電気機械デバイスの機械層及びその形成方法 - Google Patents
電気機械デバイスの機械層及びその形成方法 Download PDFInfo
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/001—Optical devices or arrangements for the control of light using movable or deformable optical elements based on interference in an adjustable optical cavity
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
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Abstract
Description
16 光学積層体
20 基板
23 ブラックマスク構造
35 誘電体構造
102 成形構造
103 突出部
104 キンク
121 反射層
122 支持層
123 導電層
Claims (40)
- 基板と、
前記基板の上に配置された部分反射光学積層体と、
可動機械層とを備えた電気機械デバイスであって、
前記部分反射光学積層体が前記機械層と前記基板との間に配置され、前記機械層が、反射層、導電層、及び、前記反射層と前記導電層との間に配置された支持層を含み、前記支持層が、光学的に不活性な固定領域において前記光学積層体上に固定されていて、且つ、前記光学積層体から離れるように前記固定領域から延伸していて、前記機械層を前記光学積層体から離隔して、前記機械層と前記光学積層体との間に潰れることのできるギャップを形成していて、
前記機械層と、前記基板と前記潰れることのできるギャップとの間に配置された静止電極とにわたって電圧を印加することによって、前記機械層が作動位置と緩和位置とに可動して、前記潰れることのできるギャップが、前記機械層が前記作動位置にある際に潰れた状態となり、前記機械層が前記緩和位置にある際に潰れていない状態となる、デバイス。 - 前記機械層が、前記固定領域に隣接し且つ光学的に不活性な領域の少なくとも一部に配置されたキンクを更に含む、請求項1に記載のデバイス。
- 前記機械層内の前記キンクが、前記ギャップから離れるように延伸する上昇部分と、前記ギャップに向けて延伸する下降部分とを含む、請求項2に記載のデバイス。
- 前記反射層及び前記導電層がアルミニウム合金を含む、請求項1に記載のデバイス。
- 前記支持層が誘電体を含む、請求項1に記載のデバイス。
- 前記支持層が酸窒化シリコン(SiON)を含む、請求項5に記載のデバイス。
- 前記支持層の一部が、前記反射層を通って前記光学積層体に向けて延伸し、前記支持層が前記固定領域において前記光学積層体に接触している、請求項5に記載のデバイス。
- 前記支持層が、略500Åから略8000Åの間の厚さのものである、請求項1に記載のデバイス。
- 前記機械層の上に配置された誘電体層を更に備え、前記機械層が前記誘電体層と前記潰れることのできるギャップとの間に存在している、請求項1に記載のデバイス。
- 前記誘電体層が、略500Åから略4000Åの間の厚さのものである、請求項9に記載のデバイス。
- 前記反射層が、略200Åから略500Åの間の厚さを有するアルミニウム銅(AlCu)層を含む、請求項1に記載のデバイス。
- 前記導電層が、略200Åから略500Åの間の厚さを有するAlCu層を含む、請求項11に記載のデバイス。
- 前記キンクの高さ寸法が、略400Åから略5000Åの間である、請求項1に記載のデバイス。
- 前記キンクの幅寸法が、略0.2μmから略5μmの間である、請求項13に記載のデバイス。
- 前記光学積層体が前記静止電極を含む、請求項1に記載のデバイス。
- 前記光学積層体、前記機械層の前記反射層、及び前記潰れることのできるギャップが干渉変調器を形成している、請求項1に記載のデバイス。
- 前記基板、前記光学積層体、及び前記機械層を含むディスプレイと、
前記ディプレイと通信して画像データを処理するように構成されたプロセッサと、
前記プロセッサと通信するように構成されたメモリデバイスとを更に備えた請求項1に記載のデバイス。 - 前記ディスプレイに少なくとも一つの信号を送信するように構成されたドライバ回路を更に備えた請求項17に記載のデバイス。
- 前記ドライバ回路に前記画像データの少なくとも一部を送信するように構成されたコントローラを更に備えた請求項18に記載のデバイス。
- 前記プロセッサに前記画像データを送信するように構成された画像ソースモジュールを更に備えた請求項17に記載のデバイス。
- 前記画像ソースモジュールが、受信機、送受信機及び送信機のうち少なくとも一つを含む、請求項20に記載のデバイス。
- 入力データを受信して前記入力データを前記プロセッサに送信するように構成された入力デバイスを更に備えた請求項17に記載のデバイス。
- 基板と、
前記基板の上に配置された光を部分的に反射するための部分反射手段と、
光を反射するための可動反射手段とを備えたデバイスであって、
前記可動反射手段が、前記可動反射手段を支持するための支持手段を含み、前記支持手段が、光学的に不活性な固定領域内において前記部分反射手段の上に固定されていて、前記支持手段が、前記部分反射手段から離れるように前記固定領域から延伸していて、前記可動反射手段を前記部分反射手段から離隔して、前記可動反射手段と前記部分反射手段との間に潰れることのできるギャップを形成していて、
前記可動反射手段と、前記基板と前記潰れることのできるギャップとの間に配置されたで静止電極とにわたって電圧を印加することによって、前記可動反射手段が作動位置と緩和位置とに可動して、前記潰れることのできるギャップが、前記可動反射手段が前記作動位置にある際に潰れた状態になり、前記可動反射手段が前記緩和位置にある際に潰れていない状態になる、デバイス。 - 前記分反射手段が光学積層体を含み、前記光学積層体が前記静止電極を含む、請求項23に記載のデバイス。
- 前記可動反射手段が反射層及び導電層を含み、前記支持手段が、誘電体を備えた支持層を含み、前記支持層が前記反射層と前記導電層との間に配置されている、請求項24に記載のデバイス。
- 前記固定領域内の前記支持層の一部が、前記反射層を通って前記光学積層体に向けて延伸して、前記光学積層体が前記固定領域内において前記光学積層体に接触している、請求項25に記載のデバイス。
- 前記可動反射手段の上に配置された誘電体層を更に備えた請求項23に記載のデバイス。
- 電気機械デバイス内に機械層を形成する方法であって、
基板を提供するステップと、
前記基板の上に光学積層体を形成するステップと、
前記光学積層体の上に犠牲層を提供するステップと、
固定領域の上に配置された前記犠牲層の一部を除去するステップと、
前記犠牲層及び前記固定領域の上に機械層を形成するステップと、
前記犠牲層を除去して前記機械層と前記基板との間に潰れることのできるギャップを形成するステップとを備え、
前記機械層を形成するステップが、前記犠牲層の上に反射層を提供することと、前記固定領域の上に配置された前記反射層の一部を除去することと、支持層の一部が前記固定領域に接触するように前記反射層の上に支持層を提供することと、前記支持層の上に導電層を提供することとを含む、方法。 - 前記固定領域に隣接する前記基板の少なくとも一部の上に成形層を堆積させるステップを更に備え、前記成形層が、前記基板から離れるように延伸する少なくとも一つの突出部を含み、前記光学積層体が前記成形層の上に形成される、請求項28に記載の方法。
- 前記犠牲層を提供するステップが、前記少なくとも一つの突出部の上を含む前記成形層の上にコンフォーマル層として前記犠牲層を形成することを含み、前記機械層を形成するステップが、前記少なくとも一つの突出部の上を含む前記犠牲層及び前記成形層の上にコンフォーマル層として前記機械層を形成することを更に含み、キンクが、前記少なくとも一つの突出部の上において前記機械層の一部の内に形成される、請求項29に記載の方法。
- 前記基板の少なくとも一部の上にブラックマスクを堆積させるステップを更に備え、前記成形層の一部及び前記ブラックマスクの一部が、前記突出部の高さ寸法を決めるように重畳する、請求項30に記載の方法。
- 前記支持層が誘電体を含む、請求項28に記載の方法。
- 前記支持層が、前記固定領域の上において前記光学積層体に直接接触する、請求項28に記載の方法。
- 前記支持層が、略500Åから略8000Åの間の厚さを有する、請求項28に記載の方法。
- 前記導電層が、略200Åから略500Åの間の厚さを有するAlCu層を含む、請求項28に記載の方法。
- 前記導電層の上に誘電体層を堆積させるステップを更に備えた請求項28に記載の方法。
- 前記誘電体層が、略500Åから略4000Åの間の厚さを有する、請求項36に記載の方法。
- 前記成形層が、略500Åから略6000Åの間の厚さを有するバッファ酸化物層を含む、請求項28に記載の方法。
- 前記ブラックマスクを堆積させるステップの前に前記基板の上に酸化アルミニウム層を堆積させるステップを更に備えた請求項31に記載の方法。
- 前記酸化アルミニウム層が、略50Åと略250Åの間の厚さを有する、請求項39に記載の方法。
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PCT/US2011/031010 WO2011126953A1 (en) | 2010-04-09 | 2011-04-01 | Mechanical layer of an electromechanical device and methods of forming the same |
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WO2011126953A1 (en) | 2011-10-13 |
US8817357B2 (en) | 2014-08-26 |
EP2556403A1 (en) | 2013-02-13 |
CN102834761A (zh) | 2012-12-19 |
KR20130100232A (ko) | 2013-09-10 |
TW201213224A (en) | 2012-04-01 |
US20110249315A1 (en) | 2011-10-13 |
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