JP2003027246A5 - - Google Patents

Download PDF

Info

Publication number
JP2003027246A5
JP2003027246A5 JP2001218311A JP2001218311A JP2003027246A5 JP 2003027246 A5 JP2003027246 A5 JP 2003027246A5 JP 2001218311 A JP2001218311 A JP 2001218311A JP 2001218311 A JP2001218311 A JP 2001218311A JP 2003027246 A5 JP2003027246 A5 JP 2003027246A5
Authority
JP
Japan
Prior art keywords
frequency
reaction vessel
frequency power
plasma
processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2001218311A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003027246A (ja
JP4035298B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2001218311A priority Critical patent/JP4035298B2/ja
Priority claimed from JP2001218311A external-priority patent/JP4035298B2/ja
Priority to US10/195,398 priority patent/US6849123B2/en
Publication of JP2003027246A publication Critical patent/JP2003027246A/ja
Publication of JP2003027246A5 publication Critical patent/JP2003027246A5/ja
Application granted granted Critical
Publication of JP4035298B2 publication Critical patent/JP4035298B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP2001218311A 2001-07-18 2001-07-18 プラズマ処理方法、半導体装置の製造方法および半導体装置 Expired - Fee Related JP4035298B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2001218311A JP4035298B2 (ja) 2001-07-18 2001-07-18 プラズマ処理方法、半導体装置の製造方法および半導体装置
US10/195,398 US6849123B2 (en) 2001-07-18 2002-07-16 Plasma processing method and method for manufacturing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001218311A JP4035298B2 (ja) 2001-07-18 2001-07-18 プラズマ処理方法、半導体装置の製造方法および半導体装置

Publications (3)

Publication Number Publication Date
JP2003027246A JP2003027246A (ja) 2003-01-29
JP2003027246A5 true JP2003027246A5 (https=) 2007-01-11
JP4035298B2 JP4035298B2 (ja) 2008-01-16

Family

ID=19052505

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001218311A Expired - Fee Related JP4035298B2 (ja) 2001-07-18 2001-07-18 プラズマ処理方法、半導体装置の製造方法および半導体装置

Country Status (2)

Country Link
US (1) US6849123B2 (https=)
JP (1) JP4035298B2 (https=)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE60219580T2 (de) * 2001-12-20 2007-12-27 Canon K.K. Verfahren und Vorrichtung zur Plasmabearbeitung
US6925616B2 (en) * 2002-10-04 2005-08-02 Sun Microsystems, Inc. Method to test power distribution system
AU2003271138B2 (en) * 2002-10-09 2008-07-10 Toyo Seikan Kaisha, Ltd. Method of forming metal oxide film and microwave power source unit for use in the method
US7238393B2 (en) * 2003-02-13 2007-07-03 Asm Japan K.K. Method of forming silicon carbide films
US7842355B2 (en) * 2005-11-01 2010-11-30 Applied Materials, Inc. System and method for modulation of power and power related functions of PECVD discharge sources to achieve new film properties
US7410593B2 (en) * 2006-02-22 2008-08-12 Macronix International Co., Ltd. Plasma etching methods using nitrogen memory species for sustaining glow discharge
DE102006032568A1 (de) * 2006-07-12 2008-01-17 Stein, Ralf Verfahren zur plasmagestützten chemischen Gasphasenabscheidung an der Innenwand eines Hohlkörpers
JP4909090B2 (ja) 2007-01-09 2012-04-04 株式会社 日立ディスプレイズ 照明装置及びこれを備えた表示装置
US20080178803A1 (en) * 2007-01-30 2008-07-31 Collins Kenneth S Plasma reactor with ion distribution uniformity controller employing plural vhf sources
JP5058909B2 (ja) 2007-08-17 2012-10-24 株式会社半導体エネルギー研究所 プラズマｃｖｄ装置及び薄膜トランジスタの作製方法
US8574577B2 (en) * 2008-01-03 2013-11-05 The Scripps Research Institute VEGF antibodies comprising modular recognition domains
US8247315B2 (en) * 2008-03-17 2012-08-21 Semiconductor Energy Laboratory Co., Ltd. Plasma processing apparatus and method for manufacturing semiconductor device
US10840082B2 (en) * 2018-08-09 2020-11-17 Lam Research Corporation Method to clean SnO2 film from chamber
WO2021250499A1 (en) * 2020-06-08 2021-12-16 Okinawa Institute Of Science And Technology School Corporation Rapid hybrid chemical vapor deposition for perovskite solar modules
KR20220012474A (ko) * 2020-07-22 2022-02-04 주식회사 원익아이피에스 박막 증착 방법 및 이를 이용한 반도체 소자의 제조방법

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3480573D1 (en) 1984-01-06 1989-12-28 Tegal Corp Single electrode, multiple frequency plasma apparatus
US4579618A (en) 1984-01-06 1986-04-01 Tegal Corporation Plasma reactor apparatus
JPS62188783A (ja) * 1986-02-14 1987-08-18 Sanyo Electric Co Ltd 静電潜像担持体の製造方法
US5569502A (en) * 1992-09-11 1996-10-29 Semiconductor Energy Laboratory Co., Ltd. Film formation apparatus and method for forming a film
JP3236111B2 (ja) 1993-03-31 2001-12-10 キヤノン株式会社 プラズマ処理装置及び処理方法
JP3339597B2 (ja) 1993-09-03 2002-10-28 アネルバ株式会社 プラズマ処理方法およびプラズマ処理装置
JPH07130719A (ja) 1993-11-05 1995-05-19 Tokyo Electron Ltd プラズマ処理装置
KR100302167B1 (ko) 1993-11-05 2001-11-22 히가시 데쓰로 플라즈마처리장치및플라즈마처리방법
EP0653501B1 (en) * 1993-11-11 1998-02-04 Nissin Electric Company, Limited Plasma-CVD method and apparatus
JPH0897199A (ja) * 1994-09-22 1996-04-12 Toshiba Corp 絶縁膜の形成方法
JPH0982495A (ja) * 1995-09-18 1997-03-28 Toshiba Corp プラズマ生成装置およびプラズマ生成方法
TW312815B (https=) 1995-12-15 1997-08-11 Hitachi Ltd
US6065425A (en) * 1996-03-25 2000-05-23 Canon Kabushiki Kaisha Plasma process apparatus and plasma process method
JP3267174B2 (ja) 1996-03-29 2002-03-18 株式会社日立製作所 プラズマ処理装置
US6001521A (en) 1997-10-29 1999-12-14 Canon Kabushiki Kaisha Electrophotographic photosensitive member
US20020056415A1 (en) * 1999-01-29 2002-05-16 Sharp Kabushiki Kaisha Apparatus and method for production of solar cells
US6703265B2 (en) * 2000-08-02 2004-03-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
US6599818B2 (en) * 2000-10-10 2003-07-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device manufacturing method, heat treatment apparatus, and heat treatment method
JP3897582B2 (ja) * 2000-12-12 2007-03-28 キヤノン株式会社 真空処理方法、真空処理装置、半導体装置の製造方法および半導体装置
JP3637291B2 (ja) * 2001-05-01 2005-04-13 三菱重工業株式会社 プラズマ化学蒸着装置における高周波プラズマの大面積均一化方法及び装置
JP2003027238A (ja) * 2001-07-09 2003-01-29 Canon Inc 堆積膜形成方法

Similar Documents

Publication Publication Date Title
JP2003027246A5 (https=)
TW200504870A (en) Rf pulsing of a narrow gap capacitively coupled reactor
TW376547B (en) Method and apparatus for plasma processing
EP1134773A3 (en) Method and apparatus for generating a plasma and semiconductor device fabrication method and apparatus
TW200614368A (en) Plasma processing device amd method
GB2356082B (en) Method and apparatus for insulating a high power RF electrode through which plasma discharge gases are injected into a processing chamber
DE50015635D1 (en) Bstraten
JP2001127045A (ja) プラズマ処理装置およびプラズマ処理方法
AU2003230264A1 (en) Plasma assisted dry processing
JP2015503224A5 (https=)
TW200509247A (en) Surface wave plasma treatment apparatus using multi-slot antenna
JP2007503724A5 (https=)
WO2010122459A3 (en) Method and apparatus for high aspect ratio dielectric etch
WO2002012587A3 (en) Processing apparatus and cleaning method
EP1220281A3 (en) Method of treatment with a microwave plasma
WO2004012235A3 (en) Atmospheric pressure plasma processing reactor
JP2009200483A5 (https=)
KR101254902B1 (ko) 플라즈마 처리 장치 및 플라즈마 처리 방법
JP2003347284A5 (https=)
EP0887836A3 (en) Electronic device fabrication apparatus
JP2003024773A5 (https=)
JP2007207925A (ja) プラズマエッチング方法
CN103367089B (zh) 一种具有双外壳的等离子体处理装置
JPH11121198A5 (ja) プラズマ生成装置及び基板表面処理方法
JPH01100925A (ja) プラズマ処理装置