JP2002529876A - 切換電圧を高めた強誘電体メモリ - Google Patents

切換電圧を高めた強誘電体メモリ

Info

Publication number
JP2002529876A
JP2002529876A JP2000580214A JP2000580214A JP2002529876A JP 2002529876 A JP2002529876 A JP 2002529876A JP 2000580214 A JP2000580214 A JP 2000580214A JP 2000580214 A JP2000580214 A JP 2000580214A JP 2002529876 A JP2002529876 A JP 2002529876A
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JP
Japan
Prior art keywords
ferroelectric
line
memory
voltage
integrated circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000580214A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002529876A5 (enExample
Inventor
ダーベンウィック，ゲイリー・エフ
カンプ，デーヴィッド・エイ
コードバ，マイケル
クーンベ，ジョージ・ビー
Original Assignee
セリス・セミコンダクター・コーポレーション
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by セリス・セミコンダクター・コーポレーション filed Critical セリス・セミコンダクター・コーポレーション
Publication of JP2002529876A publication Critical patent/JP2002529876A/ja
Publication of JP2002529876A5 publication Critical patent/JP2002529876A5/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
JP2000580214A 1998-11-02 1999-11-02 切換電圧を高めた強誘電体メモリ Pending JP2002529876A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/184,474 1998-11-02
US09/184,474 US6031754A (en) 1998-11-02 1998-11-02 Ferroelectric memory with increased switching voltage
PCT/US1999/025662 WO2000026919A1 (en) 1998-11-02 1999-11-02 Ferroelectric memory with increased switching voltage

Publications (2)

Publication Number Publication Date
JP2002529876A true JP2002529876A (ja) 2002-09-10
JP2002529876A5 JP2002529876A5 (enExample) 2006-12-21

Family

ID=22677028

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000580214A Pending JP2002529876A (ja) 1998-11-02 1999-11-02 切換電圧を高めた強誘電体メモリ

Country Status (4)

Country Link
US (1) US6031754A (enExample)
EP (1) EP1127354A1 (enExample)
JP (1) JP2002529876A (enExample)
WO (1) WO2000026919A1 (enExample)

Cited By (7)

* Cited by examiner, † Cited by third party
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JP2004319057A (ja) * 2003-04-17 2004-11-11 Micronics Internatl Co Ltd 強誘電体メモリへの過剰駆動アクセス方法と強誘電体記憶装置
JPWO2004077441A1 (ja) * 2003-02-27 2006-06-08 富士通株式会社 半導体記憶装置
JP2013214345A (ja) * 2012-03-05 2013-10-17 Fujitsu Semiconductor Ltd 不揮発性ラッチ回路及びメモリ装置
CN109074840A (zh) * 2016-03-18 2018-12-21 美光科技公司 铁电存储器单元感测
JP2019518300A (ja) * 2016-04-05 2019-06-27 マイクロン テクノロジー，インク． 強誘電体メモリセルからの電荷抽出
JP2019522863A (ja) * 2016-06-27 2019-08-15 マイクロン テクノロジー，インク． 強誘電体メモリの中のマルチレベルストレージ
KR20200081504A (ko) * 2017-12-19 2020-07-07 마이크론 테크놀로지, 인크. 메모리 감지를 위한 전류 분리

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KR100324594B1 (ko) 1999-06-28 2002-02-16 박종섭 강유전체 메모리 장치
US6658608B1 (en) * 1999-09-21 2003-12-02 David A. Kamp Apparatus and method for testing ferroelectric memories
JP2001319472A (ja) 2000-05-10 2001-11-16 Toshiba Corp 半導体記憶装置
US7030435B2 (en) * 2000-08-24 2006-04-18 Cova Technologies, Inc. Single transistor rare earth manganite ferroelectric nonvolatile memory cell
US6587365B1 (en) * 2000-08-31 2003-07-01 Micron Technology, Inc. Array architecture for depletion mode ferroelectric memory devices
US6515889B1 (en) * 2000-08-31 2003-02-04 Micron Technology, Inc. Junction-isolated depletion mode ferroelectric memory
US20020164850A1 (en) 2001-03-02 2002-11-07 Gnadinger Alfred P. Single transistor rare earth manganite ferroelectric nonvolatile memory cell
KR100425160B1 (ko) 2001-05-28 2004-03-30 주식회사 하이닉스반도체 불휘발성 강유전체 메모리 장치의 승압전압 발생회로 및그 발생방법
JP3646791B2 (ja) 2001-10-19 2005-05-11 沖電気工業株式会社 強誘電体メモリ装置およびその動作方法
US6825517B2 (en) 2002-08-28 2004-11-30 Cova Technologies, Inc. Ferroelectric transistor with enhanced data retention
US6714435B1 (en) 2002-09-19 2004-03-30 Cova Technologies, Inc. Ferroelectric transistor for storing two data bits
US6888736B2 (en) 2002-09-19 2005-05-03 Cova Technologies, Inc. Ferroelectric transistor for storing two data bits
US6876590B2 (en) 2002-11-20 2005-04-05 Infineon Technologies, Ag 2T2C signal margin test mode using a defined charge exchange between BL and/BL
US6826099B2 (en) * 2002-11-20 2004-11-30 Infineon Technologies Ag 2T2C signal margin test mode using a defined charge and discharge of BL and /BL
US7082046B2 (en) * 2003-02-27 2006-07-25 Fujitsu Limited Semiconductor memory device and method of reading data
WO2004077442A1 (ja) * 2003-02-27 2004-09-10 Fujitsu Limited 半導体記憶装置及びデータ読み出し方法
KR100682366B1 (ko) 2005-02-03 2007-02-15 후지쯔 가부시끼가이샤 반도체 기억 장치 및 데이터 판독 방법
US8477550B2 (en) * 2010-05-05 2013-07-02 Stmicroelectronics International N.V. Pass-gated bump sense amplifier for embedded drams
US9378788B2 (en) * 2012-03-15 2016-06-28 Intel Corporation Negative bitline write assist circuit and method for operating the same
US9070432B2 (en) * 2013-11-12 2015-06-30 Taiwan Semiconductor Manufacturing Co., Ltd. Negative bitline boost scheme for SRAM write-assist
CN107004443A (zh) 2014-08-22 2017-08-01 阿拉克瑞蒂半导体公司 用于存储器编程的方法和设备
US9886991B1 (en) 2016-09-30 2018-02-06 Micron Technology, Inc. Techniques for sensing logic values stored in memory cells using sense amplifiers that are selectively isolated from digit lines
US11127449B2 (en) 2018-04-25 2021-09-21 Micron Technology, Inc. Sensing a memory cell
US10607676B2 (en) * 2018-04-25 2020-03-31 Micron Technology, Inc. Sensing a memory cell
US10847201B2 (en) 2019-02-27 2020-11-24 Kepler Computing Inc. High-density low voltage non-volatile differential memory bit-cell with shared plate line
US11476260B2 (en) 2019-02-27 2022-10-18 Kepler Computing Inc. High-density low voltage non-volatile memory with unidirectional plate-line and bit-line and pillar capacitor
US11527277B1 (en) 2021-06-04 2022-12-13 Kepler Computing Inc. High-density low voltage ferroelectric memory bit-cell
US11696451B1 (en) 2021-11-01 2023-07-04 Kepler Computing Inc. Common mode compensation for non-linear polar material based 1T1C memory bit-cell
US11482270B1 (en) 2021-11-17 2022-10-25 Kepler Computing Inc. Pulsing scheme for a ferroelectric memory bit-cell to minimize read or write disturb effect and refresh logic
US12108609B1 (en) 2022-03-07 2024-10-01 Kepler Computing Inc. Memory bit-cell with stacked and folded planar capacitors
US20230395134A1 (en) 2022-06-03 2023-12-07 Kepler Computing Inc. Write disturb mitigation for non-linear polar material based multi-capacitor bit-cell
US12347476B1 (en) 2022-12-27 2025-07-01 Kepler Computing Inc. Apparatus and method to improve sensing noise margin in a non-linear polar material based bit-cell
US12334127B2 (en) 2023-01-30 2025-06-17 Kepler Computing Inc. Non-linear polar material based multi-capacitor high density bit-cell

Family Cites Families (12)

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Publication number Priority date Publication date Assignee Title
NL214049A (enExample) * 1956-02-07
US4873664A (en) * 1987-02-12 1989-10-10 Ramtron Corporation Self restoring ferroelectric memory
US4888733A (en) * 1988-09-12 1989-12-19 Ramtron Corporation Non-volatile memory cell and sensing method
JPH088339B2 (ja) * 1988-10-19 1996-01-29 株式会社東芝 半導体メモリ
US5198706A (en) * 1991-10-15 1993-03-30 National Semiconductor Ferroelectric programming cell for configurable logic
US5523964A (en) * 1994-04-07 1996-06-04 Symetrix Corporation Ferroelectric non-volatile memory unit
US5406510A (en) * 1993-07-15 1995-04-11 Symetrix Corporation Non-volatile memory
US5424975A (en) * 1993-12-30 1995-06-13 Micron Technology, Inc. Reference circuit for a non-volatile ferroelectric memory
US5487030A (en) * 1994-08-26 1996-01-23 Hughes Aircraft Company Ferroelectric interruptible read memory
JP3672954B2 (ja) * 1994-12-26 2005-07-20 株式会社ルネサステクノロジ 半導体記憶装置
JP2937254B2 (ja) * 1996-04-25 1999-08-23 日本電気株式会社 強誘電体メモリの修復方法
JP2939973B2 (ja) * 1996-06-06 1999-08-25 日本電気株式会社 不揮発性半導体メモリ装置の駆動方法

Cited By (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2004077441A1 (ja) * 2003-02-27 2006-06-08 富士通株式会社 半導体記憶装置
JP2004319057A (ja) * 2003-04-17 2004-11-11 Micronics Internatl Co Ltd 強誘電体メモリへの過剰駆動アクセス方法と強誘電体記憶装置
US7394678B2 (en) 2003-04-17 2008-07-01 Macronix International Co., Ltd. Over-driven access method and device for ferroelectric memory
US7453714B2 (en) 2003-04-17 2008-11-18 Macronix International Co., Ltd. Over-driven access method and device for ferroelectric memory
US7548445B2 (en) 2003-04-17 2009-06-16 Macronix International Co., Ltd. Over-driven access method and device for ferroelectric memory
JP2013214345A (ja) * 2012-03-05 2013-10-17 Fujitsu Semiconductor Ltd 不揮発性ラッチ回路及びメモリ装置
CN109074840A (zh) * 2016-03-18 2018-12-21 美光科技公司 铁电存储器单元感测
JP2019515408A (ja) * 2016-03-18 2019-06-06 マイクロン テクノロジー，インク． 強誘電体メモリ・セル検知
US11475934B2 (en) 2016-03-18 2022-10-18 Micron Technology, Inc. Ferroelectric memory cell sensing
CN109074840B (zh) * 2016-03-18 2022-08-19 美光科技公司 铁电存储器单元感测
US11322191B2 (en) 2016-04-05 2022-05-03 Micron Technology, Inc. Charge extraction from ferroelectric memory cell
US11087816B2 (en) 2016-04-05 2021-08-10 Micron Technology, Inc. Charge extraction from ferroelectric memory cell
JP2019518300A (ja) * 2016-04-05 2019-06-27 マイクロン テクノロジー，インク． 強誘電体メモリセルからの電荷抽出
US11017832B2 (en) 2016-06-27 2021-05-25 Micron Technology, Inc. Multi-level storage in ferroelectric memory
JP2019522863A (ja) * 2016-06-27 2019-08-15 マイクロン テクノロジー，インク． 強誘電体メモリの中のマルチレベルストレージ
US11848042B2 (en) 2016-06-27 2023-12-19 Micron Technology, Inc. Multi-level storage in ferroelectric memory
JP2021507443A (ja) * 2017-12-19 2021-02-22 マイクロン テクノロジー，インク． メモリ検知のための電流分離
KR102352778B1 (ko) 2017-12-19 2022-01-19 마이크론 테크놀로지, 인크. 메모리 감지를 위한 전류 분리
KR20200081504A (ko) * 2017-12-19 2020-07-07 마이크론 테크놀로지, 인크. 메모리 감지를 위한 전류 분리
US11670353B2 (en) 2017-12-19 2023-06-06 Micron Technology, Inc. Current separation for memory sensing

Also Published As

Publication number Publication date
US6031754A (en) 2000-02-29
EP1127354A1 (en) 2001-08-29
WO2000026919A1 (en) 2000-05-11

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