JP2002529874A5 - - Google Patents

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Publication number
JP2002529874A5
JP2002529874A5 JP2000580093A JP2000580093A JP2002529874A5 JP 2002529874 A5 JP2002529874 A5 JP 2002529874A5 JP 2000580093 A JP2000580093 A JP 2000580093A JP 2000580093 A JP2000580093 A JP 2000580093A JP 2002529874 A5 JP2002529874 A5 JP 2002529874A5
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JP
Japan
Prior art keywords
column
redundant
normal
driver
signal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2000580093A
Other languages
English (en)
Japanese (ja)
Other versions
JP4965025B2 (ja
JP2002529874A (ja
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Publication date
Priority claimed from US09/182,495 external-priority patent/US6137735A/en
Application filed filed Critical
Publication of JP2002529874A publication Critical patent/JP2002529874A/ja
Publication of JP2002529874A5 publication Critical patent/JP2002529874A5/ja
Application granted granted Critical
Publication of JP4965025B2 publication Critical patent/JP4965025B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2000580093A 1998-10-30 1999-10-29 信号パス遅延を減少させたカラム冗長回路 Expired - Fee Related JP4965025B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/182,495 1998-10-30
US09/182,495 US6137735A (en) 1998-10-30 1998-10-30 Column redundancy circuit with reduced signal path delay
PCT/CA1999/001054 WO2000026784A1 (en) 1998-10-30 1999-10-29 Column redundancy circuit with reduced signal path delay

Publications (3)

Publication Number Publication Date
JP2002529874A JP2002529874A (ja) 2002-09-10
JP2002529874A5 true JP2002529874A5 (enExample) 2010-01-21
JP4965025B2 JP4965025B2 (ja) 2012-07-04

Family

ID=22668727

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000580093A Expired - Fee Related JP4965025B2 (ja) 1998-10-30 1999-10-29 信号パス遅延を減少させたカラム冗長回路

Country Status (10)

Country Link
US (1) US6137735A (enExample)
EP (2) EP1526458B8 (enExample)
JP (1) JP4965025B2 (enExample)
KR (1) KR100724816B1 (enExample)
CN (1) CN1186725C (enExample)
AT (1) ATE278217T1 (enExample)
AU (1) AU1024500A (enExample)
CA (1) CA2347765C (enExample)
DE (2) DE69939716D1 (enExample)
WO (1) WO2000026784A1 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100363085B1 (ko) * 1999-11-05 2002-12-05 삼성전자 주식회사 리던던시 효율을 향상시키는 로우 리던던시 스킴을 갖는반도체장치
JP2002050191A (ja) * 2000-08-02 2002-02-15 Fujitsu Ltd 半導体記憶装置
US6775759B2 (en) * 2001-12-07 2004-08-10 Micron Technology, Inc. Sequential nibble burst ordering for data
US20040015645A1 (en) * 2002-07-19 2004-01-22 Dodd James M. System, apparatus, and method for a flexible DRAM architecture
US6674673B1 (en) 2002-08-26 2004-01-06 International Business Machines Corporation Column redundancy system and method for a micro-cell embedded DRAM (e-DRAM) architecture
CN100593215C (zh) * 2004-02-20 2010-03-03 斯班逊有限公司 半导体存储装置及该半导体存储装置的控制方法
US7035152B1 (en) * 2004-10-14 2006-04-25 Micron Technology, Inc. System and method for redundancy memory decoding
US7251173B2 (en) * 2005-08-02 2007-07-31 Micron Technology, Inc. Combination column redundancy system for a memory array
CN105355233B (zh) * 2015-11-23 2018-04-10 清华大学 基于pcm反转纠错算法的高效数据写入方法
CN107389211B (zh) * 2017-06-29 2019-03-12 西安邮电大学 一种二进制码转温度计码电路

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4598388A (en) * 1985-01-22 1986-07-01 Texas Instruments Incorporated Semiconductor memory with redundant column circuitry
JP2564507B2 (ja) * 1985-04-16 1996-12-18 富士通株式会社 半導体記憶装置
JPH01125799A (ja) * 1987-11-11 1989-05-18 Fujitsu Ltd 半導体記憶装置
US5270975A (en) * 1990-03-29 1993-12-14 Texas Instruments Incorporated Memory device having a non-uniform redundancy decoder arrangement
WO1993005512A1 (fr) * 1991-08-28 1993-03-18 Oki Electric Industry Co., Ltd. Dispositif memoire a semiconducteurs
US5257229A (en) * 1992-01-31 1993-10-26 Sgs-Thomson Microelectronics, Inc. Column redundancy architecture for a read/write memory
US5268866A (en) * 1992-03-02 1993-12-07 Motorola, Inc. Memory with column redundancy and localized column redundancy control signals
DE59409008D1 (de) * 1994-08-12 2000-01-20 Siemens Ag Redundanz-Schaltungsanordnung für einen integrierten Halbleiterspeicher
KR0130030B1 (ko) * 1994-08-25 1998-10-01 김광호 반도체 메모리 장치의 컬럼 리던던시 회로 및 그 방법
US5572470A (en) * 1995-05-10 1996-11-05 Sgs-Thomson Microelectronics, Inc. Apparatus and method for mapping a redundant memory column to a defective memory column
JPH0955080A (ja) * 1995-08-08 1997-02-25 Fujitsu Ltd 半導体記憶装置及び半導体記憶装置のセル情報の書き込み及び読み出し方法
EP0758112B1 (de) * 1995-08-09 2002-07-03 Infineon Technologies AG Integrierte Halbleiter-Speichervorrichtung mit Redundanzschaltungsanordnung
US5646896A (en) * 1995-10-31 1997-07-08 Hyundai Electronics America Memory device with reduced number of fuses
US5732030A (en) * 1996-06-25 1998-03-24 Texas Instruments Incorporated Method and system for reduced column redundancy using a dual column select
JPH10275493A (ja) * 1997-03-31 1998-10-13 Nec Corp 半導体記憶装置
CA2202692C (en) * 1997-04-14 2006-06-13 Mosaid Technologies Incorporated Column redundancy in semiconductor memories
KR100281284B1 (ko) * 1998-06-29 2001-02-01 김영환 컬럼 리던던시 회로

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