JPH11339492A5 - - Google Patents

Info

Publication number
JPH11339492A5
JPH11339492A5 JP1998147477A JP14747798A JPH11339492A5 JP H11339492 A5 JPH11339492 A5 JP H11339492A5 JP 1998147477 A JP1998147477 A JP 1998147477A JP 14747798 A JP14747798 A JP 14747798A JP H11339492 A5 JPH11339492 A5 JP H11339492A5
Authority
JP
Japan
Prior art keywords
word line
redundant
response
signal
activation signal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1998147477A
Other languages
English (en)
Japanese (ja)
Other versions
JPH11339492A (ja
JP4255144B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP14747798A priority Critical patent/JP4255144B2/ja
Priority claimed from JP14747798A external-priority patent/JP4255144B2/ja
Priority to US09/195,212 priority patent/US6058053A/en
Priority to KR1019990004049A priority patent/KR100290696B1/ko
Publication of JPH11339492A publication Critical patent/JPH11339492A/ja
Publication of JPH11339492A5 publication Critical patent/JPH11339492A5/ja
Application granted granted Critical
Publication of JP4255144B2 publication Critical patent/JP4255144B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP14747798A 1998-05-28 1998-05-28 半導体記憶装置 Expired - Fee Related JP4255144B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP14747798A JP4255144B2 (ja) 1998-05-28 1998-05-28 半導体記憶装置
US09/195,212 US6058053A (en) 1998-05-28 1998-11-18 Semiconductor memory device capable of high speed operation and including redundant cells
KR1019990004049A KR100290696B1 (ko) 1998-05-28 1999-02-05 고속 동작이 가능한 용장 셀을 포함하는 반도체 기억 장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14747798A JP4255144B2 (ja) 1998-05-28 1998-05-28 半導体記憶装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2008264014A Division JP2009009700A (ja) 2008-10-10 2008-10-10 半導体記憶装置

Publications (3)

Publication Number Publication Date
JPH11339492A JPH11339492A (ja) 1999-12-10
JPH11339492A5 true JPH11339492A5 (enExample) 2005-10-06
JP4255144B2 JP4255144B2 (ja) 2009-04-15

Family

ID=15431286

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14747798A Expired - Fee Related JP4255144B2 (ja) 1998-05-28 1998-05-28 半導体記憶装置

Country Status (3)

Country Link
US (1) US6058053A (enExample)
JP (1) JP4255144B2 (enExample)
KR (1) KR100290696B1 (enExample)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4804503B2 (ja) * 1998-06-09 2011-11-02 ルネサスエレクトロニクス株式会社 半導体記憶装置
JP2000149564A (ja) * 1998-10-30 2000-05-30 Mitsubishi Electric Corp 半導体記憶装置
JP4179687B2 (ja) 1998-12-24 2008-11-12 株式会社ルネサステクノロジ 半導体記憶装置
KR100297193B1 (ko) * 1999-04-27 2001-10-29 윤종용 리던던트 로우 대체 구조를 가지는 반도체 메모리 장치 및 그것의 로우 구동 방법
DE69909969D1 (de) * 1999-05-12 2003-09-04 St Microelectronics Srl Unflüchtiger Speicher mit Zeilenredundanz
KR100364791B1 (ko) * 1999-09-15 2002-12-16 주식회사 하이닉스반도체 로우 리던던시 회로를 구비한 비휘발성 강유전체 메모리 장치 및 그의 페일 어드레스 구제방법
JP3544929B2 (ja) * 2000-09-27 2004-07-21 Ｎｅｃマイクロシステム株式会社 半導体記憶装置およびそのリダンダンシ回路置換方法
JP3680725B2 (ja) * 2000-10-26 2005-08-10 松下電器産業株式会社 半導体記憶装置
US6707752B2 (en) 2001-06-22 2004-03-16 Intel Corporation Tag design for cache access with redundant-form address
US6621756B2 (en) * 2001-11-26 2003-09-16 Macronix International Co., Ltd. Compact integrated circuit with memory array
KR20030047027A (ko) * 2001-12-07 2003-06-18 주식회사 하이닉스반도체 메모리 장치
KR100480607B1 (ko) * 2002-08-02 2005-04-06 삼성전자주식회사 리던던시 워드라인에 의하여 결함 워드라인을 대체하는경우 대체효율을 향상시키는 반도체 메모리 장치
KR100492799B1 (ko) 2002-11-08 2005-06-07 주식회사 하이닉스반도체 강유전체 메모리 장치
JP2004259338A (ja) * 2003-02-25 2004-09-16 Hitachi Ltd 半導体集積回路装置
JP2005339674A (ja) * 2004-05-27 2005-12-08 Hitachi Ltd 半導体記憶装置
US7499352B2 (en) * 2006-05-19 2009-03-03 Innovative Silicon Isi Sa Integrated circuit having memory array including row redundancy, and method of programming, controlling and/or operating same
JP2009187641A (ja) * 2008-02-08 2009-08-20 Elpida Memory Inc 半導体記憶装置及びその制御方法、並びに不良アドレスの救済可否判定方法
JP2009009700A (ja) * 2008-10-10 2009-01-15 Renesas Technology Corp 半導体記憶装置
US9299409B2 (en) 2013-09-11 2016-03-29 Tadashi Miyakawa Semiconductor storage device
US9208848B2 (en) 2014-03-12 2015-12-08 Kabushiki Kaisha Toshiba Semiconductor storage device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6433800A (en) * 1987-07-29 1989-02-03 Toshiba Corp Semiconductor memory
JPH05242693A (ja) * 1992-02-28 1993-09-21 Mitsubishi Electric Corp 半導体記憶装置
JP2582987B2 (ja) * 1992-05-18 1997-02-19 株式会社東芝 半導体メモリ装置
JP3226425B2 (ja) * 1994-09-09 2001-11-05 富士通株式会社 半導体記憶装置

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