KR100290696B1 - 고속 동작이 가능한 용장 셀을 포함하는 반도체 기억 장치 - Google Patents

고속 동작이 가능한 용장 셀을 포함하는 반도체 기억 장치 Download PDF

Info

Publication number
KR100290696B1
KR100290696B1 KR1019990004049A KR19990004049A KR100290696B1 KR 100290696 B1 KR100290696 B1 KR 100290696B1 KR 1019990004049 A KR1019990004049 A KR 1019990004049A KR 19990004049 A KR19990004049 A KR 19990004049A KR 100290696 B1 KR100290696 B1 KR 100290696B1
Authority
KR
South Korea
Prior art keywords
redundant
signal
word line
block
determination
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019990004049A
Other languages
English (en)
Korean (ko)
Other versions
KR19990087859A (ko
Inventor
쯔지다까하루
오오이시쯔까사
가또히로시
도미시마시게끼
시마노히로끼
Original Assignee
다니구찌 이찌로오, 기타오카 다카시
미쓰비시덴키 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 다니구찌 이찌로오, 기타오카 다카시, 미쓰비시덴키 가부시키가이샤 filed Critical 다니구찌 이찌로오, 기타오카 다카시
Publication of KR19990087859A publication Critical patent/KR19990087859A/ko
Application granted granted Critical
Publication of KR100290696B1 publication Critical patent/KR100290696B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/84—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/84—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability
    • G11C29/844—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability by splitting the decoders in stages

Landscapes

  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Dram (AREA)
KR1019990004049A 1998-05-28 1999-02-05 고속 동작이 가능한 용장 셀을 포함하는 반도체 기억 장치 Expired - Fee Related KR100290696B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP1998-147477 1998-05-28
JP14747798A JP4255144B2 (ja) 1998-05-28 1998-05-28 半導体記憶装置

Publications (2)

Publication Number Publication Date
KR19990087859A KR19990087859A (ko) 1999-12-27
KR100290696B1 true KR100290696B1 (ko) 2001-05-15

Family

ID=15431286

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019990004049A Expired - Fee Related KR100290696B1 (ko) 1998-05-28 1999-02-05 고속 동작이 가능한 용장 셀을 포함하는 반도체 기억 장치

Country Status (3)

Country Link
US (1) US6058053A (enExample)
JP (1) JP4255144B2 (enExample)
KR (1) KR100290696B1 (enExample)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4804503B2 (ja) * 1998-06-09 2011-11-02 ルネサスエレクトロニクス株式会社 半導体記憶装置
JP2000149564A (ja) 1998-10-30 2000-05-30 Mitsubishi Electric Corp 半導体記憶装置
JP4179687B2 (ja) 1998-12-24 2008-11-12 株式会社ルネサステクノロジ 半導体記憶装置
KR100297193B1 (ko) * 1999-04-27 2001-10-29 윤종용 리던던트 로우 대체 구조를 가지는 반도체 메모리 장치 및 그것의 로우 구동 방법
EP1052572B1 (en) * 1999-05-12 2003-07-30 STMicroelectronics S.r.l. Non-volatile memory device with row redundancy
KR100364791B1 (ko) * 1999-09-15 2002-12-16 주식회사 하이닉스반도체 로우 리던던시 회로를 구비한 비휘발성 강유전체 메모리 장치 및 그의 페일 어드레스 구제방법
JP3544929B2 (ja) * 2000-09-27 2004-07-21 Ｎｅｃマイクロシステム株式会社 半導体記憶装置およびそのリダンダンシ回路置換方法
JP3680725B2 (ja) * 2000-10-26 2005-08-10 松下電器産業株式会社 半導体記憶装置
US6707752B2 (en) 2001-06-22 2004-03-16 Intel Corporation Tag design for cache access with redundant-form address
US6621756B2 (en) * 2001-11-26 2003-09-16 Macronix International Co., Ltd. Compact integrated circuit with memory array
KR20030047027A (ko) * 2001-12-07 2003-06-18 주식회사 하이닉스반도체 메모리 장치
KR100480607B1 (ko) * 2002-08-02 2005-04-06 삼성전자주식회사 리던던시 워드라인에 의하여 결함 워드라인을 대체하는경우 대체효율을 향상시키는 반도체 메모리 장치
KR100492799B1 (ko) 2002-11-08 2005-06-07 주식회사 하이닉스반도체 강유전체 메모리 장치
JP2004259338A (ja) * 2003-02-25 2004-09-16 Hitachi Ltd 半導体集積回路装置
JP2005339674A (ja) * 2004-05-27 2005-12-08 Hitachi Ltd 半導体記憶装置
US7499352B2 (en) * 2006-05-19 2009-03-03 Innovative Silicon Isi Sa Integrated circuit having memory array including row redundancy, and method of programming, controlling and/or operating same
JP2009187641A (ja) * 2008-02-08 2009-08-20 Elpida Memory Inc 半導体記憶装置及びその制御方法、並びに不良アドレスの救済可否判定方法
JP2009009700A (ja) * 2008-10-10 2009-01-15 Renesas Technology Corp 半導体記憶装置
US9299409B2 (en) 2013-09-11 2016-03-29 Tadashi Miyakawa Semiconductor storage device
US9208848B2 (en) 2014-03-12 2015-12-08 Kabushiki Kaisha Toshiba Semiconductor storage device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6433800A (en) * 1987-07-29 1989-02-03 Toshiba Corp Semiconductor memory
JPH05242693A (ja) * 1992-02-28 1993-09-21 Mitsubishi Electric Corp 半導体記憶装置
JP2582987B2 (ja) * 1992-05-18 1997-02-19 株式会社東芝 半導体メモリ装置
JP3226425B2 (ja) * 1994-09-09 2001-11-05 富士通株式会社 半導体記憶装置

Also Published As

Publication number Publication date
KR19990087859A (ko) 1999-12-27
JP4255144B2 (ja) 2009-04-15
JPH11339492A (ja) 1999-12-10
US6058053A (en) 2000-05-02

Similar Documents

Publication Publication Date Title
KR100290696B1 (ko) 고속 동작이 가능한 용장 셀을 포함하는 반도체 기억 장치
US6519192B2 (en) Semiconductor memory device having a large band width and allowing efficient execution of redundant repair
JP4527746B2 (ja) 同期形半導体メモリ装置のためのカラム選択ライン制御回路
CN112331250A (zh) 用于熔丝锁存器和匹配电路的设备和方法
JP2000285694A (ja) 半導体記憶装置および半導体記憶装置を搭載する半導体集積回路装置
JPH11353893A (ja) 半導体記憶装置
CN111951872A (zh) 半导体存储设备和操作半导体存储设备的方法
US6496430B2 (en) Semiconductor memory circuit having selective redundant memory cells
GB2280975A (en) Semiconductor memory devices
KR20010042856A (ko) 반도체 기억장치
US6046955A (en) Semiconductor memory device with testable spare columns and rows
JPH10172295A (ja) 冗長セルアレーを有する半導体メモリ装置
US20090059691A1 (en) Semiconductor integrated circuit and multi test method thereof
JP3817418B2 (ja) 半導体メモリ装置及びこの装置のリダンダンシー方法
KR100374632B1 (ko) 반도체 메모리장치 및 이의 메모리셀 어레이 블락 제어방법
KR100230412B1 (ko) 멀티 뱅크를 갖는 반도체 메모리장치
KR20040018573A (ko) 반도체 메모리장치의 입출력 센스 앰프 구동방법 및 그구동제어회로
KR100301039B1 (ko) 칼럼선택선신호를제어하여데이터를마스킹하는반도체메모리장치및이의칼럼디코더
KR100915809B1 (ko) 반도체 테스트 장치 및 그의 테스트 방법
KR100336955B1 (ko) 반도체 기억 장치
US6301187B1 (en) Synchronous type semiconductor memory device permitting reduction in ratio of area occupied by control circuit in chip area
JP4125448B2 (ja) 半導体メモリ装置
JP2004192728A (ja) 半導体記憶装置
JP2009009700A (ja) 半導体記憶装置
KR100361862B1 (ko) 반도체 메모리장치 및 이의 센싱전류 감소방법

Legal Events

Date Code Title Description
A201 Request for examination
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 11

FPAY Annual fee payment

Payment date: 20120223

Year of fee payment: 12

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 12

FPAY Annual fee payment

Payment date: 20130227

Year of fee payment: 13

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 13

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20140306

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20140306