JP2002523902A - パワートランジスタ装置 - Google Patents

パワートランジスタ装置

Info

Publication number
JP2002523902A
JP2002523902A JP2000566891A JP2000566891A JP2002523902A JP 2002523902 A JP2002523902 A JP 2002523902A JP 2000566891 A JP2000566891 A JP 2000566891A JP 2000566891 A JP2000566891 A JP 2000566891A JP 2002523902 A JP2002523902 A JP 2002523902A
Authority
JP
Japan
Prior art keywords
temperature
sensor
cell
array
cells
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000566891A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002523902A5 (enExample
Inventor
リチャード ジェイ バーカー
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronics NV filed Critical Philips Electronics NV
Publication of JP2002523902A publication Critical patent/JP2002523902A/ja
Publication of JP2002523902A5 publication Critical patent/JP2002523902A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/141—VDMOS having built-in components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/10—Integrated device layouts
    • H10D89/105—Integrated device layouts adapted for thermal considerations

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2000566891A 1998-08-20 1999-08-06 パワートランジスタ装置 Pending JP2002523902A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB9818044.1 1998-08-20
GBGB9818044.1A GB9818044D0 (en) 1998-08-20 1998-08-20 Power transistor device
PCT/EP1999/005776 WO2000011720A1 (en) 1998-08-20 1999-08-06 Power transistor device

Publications (2)

Publication Number Publication Date
JP2002523902A true JP2002523902A (ja) 2002-07-30
JP2002523902A5 JP2002523902A5 (enExample) 2006-10-12

Family

ID=10837485

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000566891A Pending JP2002523902A (ja) 1998-08-20 1999-08-06 パワートランジスタ装置

Country Status (6)

Country Link
US (1) US6144085A (enExample)
EP (1) EP1048077A1 (enExample)
JP (1) JP2002523902A (enExample)
KR (1) KR100664332B1 (enExample)
GB (1) GB9818044D0 (enExample)
WO (1) WO2000011720A1 (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005322781A (ja) * 2004-05-10 2005-11-17 Mitsubishi Electric Corp 半導体装置
JP2007234850A (ja) * 2006-03-01 2007-09-13 Mitsubishi Electric Corp 半導体装置
CN106558583A (zh) * 2015-09-30 2017-04-05 瑞萨电子株式会社 半导体装置
CN108291843A (zh) * 2015-11-26 2018-07-17 罗伯特·博世有限公司 具有第一温度测量元件的半导体构件以及用于确定流过半导体构件的电流的方法
JP2018120930A (ja) * 2017-01-24 2018-08-02 トヨタ自動車株式会社 半導体装置

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6855985B2 (en) * 2002-09-29 2005-02-15 Advanced Analogic Technologies, Inc. Modular bipolar-CMOS-DMOS analog integrated circuit & power transistor technology
JP3783707B2 (ja) 2003-03-19 2006-06-07 セイコーエプソン株式会社 検査素子付基板並びに電気光学装置用基板及び電気光学装置及び電子機器
DE10317466A1 (de) * 2003-04-16 2004-12-09 Robert Bosch Gmbh Elektromotor
US7187053B2 (en) * 2003-06-26 2007-03-06 International Business Machines Corporation Thermal sensing method and system
DE102004021393B4 (de) * 2004-04-30 2006-06-14 Infineon Technologies Ag Feldeffekt-Leistungstransistor
US8120135B2 (en) * 2004-05-19 2012-02-21 Infineon Technologies Ag Transistor
DE102004063946B4 (de) * 2004-05-19 2018-03-22 Infineon Technologies Ag Transistoranordnungen mit einer in einem Trennungstrench angeordneten Elektrode
DE102004024887B4 (de) * 2004-05-19 2012-01-26 Infineon Technologies Ag Transistor mit Zellenfeld, Temperatursensor und Isolationsstruktur
DE102004026233B4 (de) * 2004-05-28 2015-02-12 Infineon Technologies Ag Trenchtransistor
TWI242334B (en) * 2004-06-02 2005-10-21 Microelectronics Tech Inc Receiver signal strength indicator (RSSI) having automatic output detection circuit
JP5080721B2 (ja) * 2004-09-22 2012-11-21 株式会社リコー 半導体装置及びその半導体装置を使用したボルテージレギュレータ
EP1875501A1 (en) * 2005-04-13 2008-01-09 Freescale Semiconductor, Inc. Protection of an integrated circuit and method therefor
US7655944B1 (en) * 2005-06-03 2010-02-02 The United States Of America As Represented By The Secretary Of The Army Systems and methods for estimating thermal resistance of field effect transistor structures
US7800171B2 (en) * 2006-10-13 2010-09-21 Infineon Technologies Austria Ag Integrated circuit including a semiconductor device
DE102007020249B4 (de) * 2007-04-30 2015-01-08 Infineon Technologies Austria Ag Halbleiterbauelement, Halbleitersensorstruktur sowie Vorrichtung und Verfahren zum Herstellen eines Halbleiterbauelement
JP4357546B2 (ja) * 2007-06-07 2009-11-04 株式会社東芝 半導体装置
US7734440B2 (en) * 2007-10-31 2010-06-08 Agere Systems Inc. On-chip over-temperature detection
US8203315B2 (en) * 2008-09-30 2012-06-19 Infineon Technologies Ag System and method for temperature based control of a power semiconductor circuit
US20110051302A1 (en) 2009-08-27 2011-03-03 Infineon Technologies Ag Integrated power device and method
US8848330B2 (en) * 2011-07-29 2014-09-30 Infineon Technologies Austria Ag Circuit with a temperature protected electronic switch
CN103426916B (zh) 2012-05-14 2018-12-04 恩智浦美国有限公司 功率mosfet结构及方法
CN103489862B (zh) 2012-06-12 2018-05-22 恩智浦美国有限公司 功率mosfet电流传感结构和方法
US10819101B2 (en) * 2017-02-20 2020-10-27 Microsemi Corporation Over-current protection apparatus and method
DE102019102929B3 (de) 2019-02-06 2020-07-09 Infineon Technologies Ag Intelligenter Halbleiterschalter
DE102019119973B3 (de) 2019-07-24 2021-01-21 Infineon Technologies Ag Intelligenter elektronischer schalter
DE102019119975B3 (de) 2019-07-24 2021-01-21 Infineon Technologies Ag Intelligenter elektronischer schalter
DE102019119972B3 (de) 2019-07-24 2021-01-21 Infineon Technologies Ag Intelligenter elektronischer schalter
DE102019121685B4 (de) 2019-08-12 2021-03-04 Infineon Technologies Ag Intelligenter elektronischer schalter
DE102019121726A1 (de) 2019-08-13 2021-02-18 Infineon Technologies Ag Intelligenter halbleiterschalter
DE102019121794A1 (de) 2019-08-13 2021-02-18 Infineon Technologies Ag Intelligenter elektronischer schalter
DE102019121795B4 (de) 2019-08-13 2022-01-20 Infineon Technologies Ag Intelligenter elektronischer schalter
DE102020122571B4 (de) 2020-08-28 2023-03-30 Infineon Technologies Ag Intelligenter elektronischer schalter
US10972088B1 (en) 2020-09-01 2021-04-06 Infineon Technologies Ag Temperature detection of a power switch based on paired measurements of current and voltage
US11378614B2 (en) 2020-09-01 2022-07-05 Infineon Technologies Ag Temperature detection of power switch using modulation of driver output impedance
DE102020123149A1 (de) 2020-09-04 2022-03-10 Infineon Technologies Ag Ansteuerschaltung für elektronischen schalter
US20220357211A1 (en) * 2021-05-05 2022-11-10 Mediatek Inc. Integration friendly thermal sensor
DE102022115099B4 (de) 2022-06-15 2025-05-22 Infineon Technologies Ag Intelligenter halbleiterschalter

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01268065A (ja) * 1988-04-19 1989-10-25 Nec Corp 縦型電界効果トランジスタ
JPH04273030A (ja) * 1990-09-24 1992-09-29 Philips Gloeilampenfab:Nv 温度検出回路
JPH05198846A (ja) * 1991-07-19 1993-08-06 Philips Gloeilampenfab:Nv 温度感知装置およびこの装置を用いる温度感知回路
JPH0758293A (ja) * 1993-08-18 1995-03-03 Hitachi Ltd 絶縁ゲート型半導体装置およびそれを用いた駆動回路装置ならびに電子システム

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4783690A (en) * 1983-09-06 1988-11-08 General Electric Company Power semiconductor device with main current section and emulation current section
US4931844A (en) * 1988-03-09 1990-06-05 Ixys Corporation High power transistor with voltage, current, power, resistance, and temperature sensing capability
US5444219A (en) * 1990-09-24 1995-08-22 U.S. Philips Corporation Temperature sensing device and a temperature sensing circuit using such a device
US5336943A (en) * 1991-07-19 1994-08-09 U.S. Philips Corporation Temperature sensing circuit
US5563437A (en) * 1992-02-21 1996-10-08 Motorola, Inc. Semiconductor device having a large sense voltage
GB9206058D0 (en) * 1992-03-20 1992-05-06 Philips Electronics Uk Ltd A semiconductor switch and a temperature sensing circuit for such a switch
GB9513420D0 (en) * 1995-06-30 1995-09-06 Philips Electronics Uk Ltd Power semiconductor devices
DE19534604C1 (de) * 1995-09-18 1996-10-24 Siemens Ag Durch Feldeffekt steuerbares Halbleiterbauelement mit mehreren Temperatursensoren zum Schutz vor Überlastung
DE19548060A1 (de) * 1995-12-21 1997-06-26 Siemens Ag Durch Feldeffekt steuerbares Leistungs-Halbleiterbauelement mit Temperatursensor
JP2000509906A (ja) * 1997-02-19 2000-08-02 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 温度センサ回路を有する出力半導体装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01268065A (ja) * 1988-04-19 1989-10-25 Nec Corp 縦型電界効果トランジスタ
JPH04273030A (ja) * 1990-09-24 1992-09-29 Philips Gloeilampenfab:Nv 温度検出回路
JPH05198846A (ja) * 1991-07-19 1993-08-06 Philips Gloeilampenfab:Nv 温度感知装置およびこの装置を用いる温度感知回路
JPH0758293A (ja) * 1993-08-18 1995-03-03 Hitachi Ltd 絶縁ゲート型半導体装置およびそれを用いた駆動回路装置ならびに電子システム

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005322781A (ja) * 2004-05-10 2005-11-17 Mitsubishi Electric Corp 半導体装置
JP2007234850A (ja) * 2006-03-01 2007-09-13 Mitsubishi Electric Corp 半導体装置
CN106558583A (zh) * 2015-09-30 2017-04-05 瑞萨电子株式会社 半导体装置
JP2017069412A (ja) * 2015-09-30 2017-04-06 ルネサスエレクトロニクス株式会社 半導体装置
CN106558583B (zh) * 2015-09-30 2021-11-05 瑞萨电子株式会社 半导体装置
CN108291843A (zh) * 2015-11-26 2018-07-17 罗伯特·博世有限公司 具有第一温度测量元件的半导体构件以及用于确定流过半导体构件的电流的方法
JP2018536858A (ja) * 2015-11-26 2018-12-13 ロベルト・ボッシュ・ゲゼルシャフト・ミト・ベシュレンクテル・ハフツングＲｏｂｅｒｔ Ｂｏｓｃｈ Ｇｍｂｈ 第１温度測定素子を備える半導体デバイスおよび半導体デバイスを流れる電流を決定する方法
JP2018120930A (ja) * 2017-01-24 2018-08-02 トヨタ自動車株式会社 半導体装置

Also Published As

Publication number Publication date
KR100664332B1 (ko) 2007-01-02
GB9818044D0 (en) 1998-10-14
KR20010031207A (ko) 2001-04-16
WO2000011720A1 (en) 2000-03-02
EP1048077A1 (en) 2000-11-02
US6144085A (en) 2000-11-07

Similar Documents

Publication Publication Date Title
US6144085A (en) Power transistor device having hot-location and cool-location temperature sensors
US9865792B2 (en) System and method for manufacturing a temperature difference sensor
EP0783766B1 (en) Power semiconductor devices
JP3315456B2 (ja) 半導体スイッチ
KR100471521B1 (ko) 온도센서회로를구비한파워반도체장치
JPH01157573A (ja) 半導体装置およびその製造方法
US3719797A (en) Solid state temperature sensor employing a pair of dissimilar schottky-barrier diodes
US6948847B2 (en) Temperature sensor for a MOS circuit configuration
US9343381B2 (en) Semiconductor component with integrated crack sensor and method for detecting a crack in a semiconductor component
US11927619B2 (en) Power semi-conductor module, mask, measurement method, computer software, and recording medium
US6060744A (en) Semiconductor device with a main current cell region and a current detecting cell region
JPH09186329A (ja) 温度センサを有する電力用半導体デバイス
US7808067B2 (en) Semiconductor device and temperature sensor structure for a semiconductor device
US6002153A (en) MOS type semiconductor device with a current detecting function
US12021139B2 (en) Semiconductor arrangement with an integrated temperature sensor
US4639755A (en) Thermosensitive semiconductor device using Darlington circuit
JP2552880B2 (ja) 垂直ｄｍｏｓセル構造
US5629551A (en) Semiconductor device comprising an over-temperature detection element for detecting excessive temperatures amplifiers
CN112349715A (zh) 具有温度及电压检测功能的功率半导体器件及制作方法
US8018018B2 (en) Temperature sensing device
JP2002368222A (ja) 過熱検出機能付き半導体装置
CN120711814A (zh) 一种集成温度传感的功率器件
JP2003209151A (ja) 半絶縁膜の電位分布測定方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20060804

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20060804

A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A711

Effective date: 20081014

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20091214

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20091218

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20100521