JP2002523902A5 - - Google Patents

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Publication number
JP2002523902A5
JP2002523902A5 JP2000566891A JP2000566891A JP2002523902A5 JP 2002523902 A5 JP2002523902 A5 JP 2002523902A5 JP 2000566891 A JP2000566891 A JP 2000566891A JP 2000566891 A JP2000566891 A JP 2000566891A JP 2002523902 A5 JP2002523902 A5 JP 2002523902A5
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000566891A
Other languages
Japanese (ja)
Other versions
JP2002523902A (ja
Filing date
Publication date
Priority claimed from GBGB9818044.1A external-priority patent/GB9818044D0/en
Application filed filed Critical
Publication of JP2002523902A publication Critical patent/JP2002523902A/ja
Publication of JP2002523902A5 publication Critical patent/JP2002523902A5/ja
Pending legal-status Critical Current

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JP2000566891A 1998-08-20 1999-08-06 パワートランジスタ装置 Pending JP2002523902A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB9818044.1 1998-08-20
GBGB9818044.1A GB9818044D0 (en) 1998-08-20 1998-08-20 Power transistor device
PCT/EP1999/005776 WO2000011720A1 (en) 1998-08-20 1999-08-06 Power transistor device

Publications (2)

Publication Number Publication Date
JP2002523902A JP2002523902A (ja) 2002-07-30
JP2002523902A5 true JP2002523902A5 (enExample) 2006-10-12

Family

ID=10837485

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000566891A Pending JP2002523902A (ja) 1998-08-20 1999-08-06 パワートランジスタ装置

Country Status (6)

Country Link
US (1) US6144085A (enExample)
EP (1) EP1048077A1 (enExample)
JP (1) JP2002523902A (enExample)
KR (1) KR100664332B1 (enExample)
GB (1) GB9818044D0 (enExample)
WO (1) WO2000011720A1 (enExample)

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JP3783707B2 (ja) 2003-03-19 2006-06-07 セイコーエプソン株式会社 検査素子付基板並びに電気光学装置用基板及び電気光学装置及び電子機器
DE10317466A1 (de) * 2003-04-16 2004-12-09 Robert Bosch Gmbh Elektromotor
US7187053B2 (en) * 2003-06-26 2007-03-06 International Business Machines Corporation Thermal sensing method and system
DE102004021393B4 (de) * 2004-04-30 2006-06-14 Infineon Technologies Ag Feldeffekt-Leistungstransistor
JP4829480B2 (ja) * 2004-05-10 2011-12-07 三菱電機株式会社 半導体装置
US8120135B2 (en) * 2004-05-19 2012-02-21 Infineon Technologies Ag Transistor
DE102004063946B4 (de) * 2004-05-19 2018-03-22 Infineon Technologies Ag Transistoranordnungen mit einer in einem Trennungstrench angeordneten Elektrode
DE102004024887B4 (de) * 2004-05-19 2012-01-26 Infineon Technologies Ag Transistor mit Zellenfeld, Temperatursensor und Isolationsstruktur
DE102004026233B4 (de) * 2004-05-28 2015-02-12 Infineon Technologies Ag Trenchtransistor
TWI242334B (en) * 2004-06-02 2005-10-21 Microelectronics Tech Inc Receiver signal strength indicator (RSSI) having automatic output detection circuit
JP5080721B2 (ja) * 2004-09-22 2012-11-21 株式会社リコー 半導体装置及びその半導体装置を使用したボルテージレギュレータ
EP1875501A1 (en) * 2005-04-13 2008-01-09 Freescale Semiconductor, Inc. Protection of an integrated circuit and method therefor
US7655944B1 (en) * 2005-06-03 2010-02-02 The United States Of America As Represented By The Secretary Of The Army Systems and methods for estimating thermal resistance of field effect transistor structures
JP5014646B2 (ja) * 2006-03-01 2012-08-29 三菱電機株式会社 半導体装置
US7800171B2 (en) * 2006-10-13 2010-09-21 Infineon Technologies Austria Ag Integrated circuit including a semiconductor device
DE102007020249B4 (de) * 2007-04-30 2015-01-08 Infineon Technologies Austria Ag Halbleiterbauelement, Halbleitersensorstruktur sowie Vorrichtung und Verfahren zum Herstellen eines Halbleiterbauelement
JP4357546B2 (ja) * 2007-06-07 2009-11-04 株式会社東芝 半導体装置
US7734440B2 (en) * 2007-10-31 2010-06-08 Agere Systems Inc. On-chip over-temperature detection
US8203315B2 (en) * 2008-09-30 2012-06-19 Infineon Technologies Ag System and method for temperature based control of a power semiconductor circuit
US20110051302A1 (en) 2009-08-27 2011-03-03 Infineon Technologies Ag Integrated power device and method
US8848330B2 (en) * 2011-07-29 2014-09-30 Infineon Technologies Austria Ag Circuit with a temperature protected electronic switch
CN103426916B (zh) 2012-05-14 2018-12-04 恩智浦美国有限公司 功率mosfet结构及方法
CN103489862B (zh) 2012-06-12 2018-05-22 恩智浦美国有限公司 功率mosfet电流传感结构和方法
JP2017069412A (ja) * 2015-09-30 2017-04-06 ルネサスエレクトロニクス株式会社 半導体装置
DE102015223470A1 (de) * 2015-11-26 2017-06-01 Robert Bosch Gmbh Halbleiterbauelement mit einem Substrat und einem ersten Temperaturmesselement sowie Verfahren zum Bestimmen eines durch ein Halbleiterbauelement fließenden Stromes sowie Steuergerät für ein Fahrzeug
JP6638662B2 (ja) * 2017-01-24 2020-01-29 トヨタ自動車株式会社 半導体装置
US10819101B2 (en) * 2017-02-20 2020-10-27 Microsemi Corporation Over-current protection apparatus and method
DE102019102929B3 (de) 2019-02-06 2020-07-09 Infineon Technologies Ag Intelligenter Halbleiterschalter
DE102019119973B3 (de) 2019-07-24 2021-01-21 Infineon Technologies Ag Intelligenter elektronischer schalter
DE102019119975B3 (de) 2019-07-24 2021-01-21 Infineon Technologies Ag Intelligenter elektronischer schalter
DE102019119972B3 (de) 2019-07-24 2021-01-21 Infineon Technologies Ag Intelligenter elektronischer schalter
DE102019121685B4 (de) 2019-08-12 2021-03-04 Infineon Technologies Ag Intelligenter elektronischer schalter
DE102019121726A1 (de) 2019-08-13 2021-02-18 Infineon Technologies Ag Intelligenter halbleiterschalter
DE102019121794A1 (de) 2019-08-13 2021-02-18 Infineon Technologies Ag Intelligenter elektronischer schalter
DE102019121795B4 (de) 2019-08-13 2022-01-20 Infineon Technologies Ag Intelligenter elektronischer schalter
DE102020122571B4 (de) 2020-08-28 2023-03-30 Infineon Technologies Ag Intelligenter elektronischer schalter
US10972088B1 (en) 2020-09-01 2021-04-06 Infineon Technologies Ag Temperature detection of a power switch based on paired measurements of current and voltage
US11378614B2 (en) 2020-09-01 2022-07-05 Infineon Technologies Ag Temperature detection of power switch using modulation of driver output impedance
DE102020123149A1 (de) 2020-09-04 2022-03-10 Infineon Technologies Ag Ansteuerschaltung für elektronischen schalter
US20220357211A1 (en) * 2021-05-05 2022-11-10 Mediatek Inc. Integration friendly thermal sensor
DE102022115099B4 (de) 2022-06-15 2025-05-22 Infineon Technologies Ag Intelligenter halbleiterschalter

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US4783690A (en) * 1983-09-06 1988-11-08 General Electric Company Power semiconductor device with main current section and emulation current section
US4931844A (en) * 1988-03-09 1990-06-05 Ixys Corporation High power transistor with voltage, current, power, resistance, and temperature sensing capability
JPH0777262B2 (ja) * 1988-04-19 1995-08-16 日本電気株式会社 縦型電界効果トランジスタ
US5444219A (en) * 1990-09-24 1995-08-22 U.S. Philips Corporation Temperature sensing device and a temperature sensing circuit using such a device
GB9115694D0 (en) * 1991-07-19 1991-09-04 Philips Electronic Associated A temperature sensing device and a temperature sensing circuit using such a device
GB2248151A (en) * 1990-09-24 1992-03-25 Philips Electronic Associated Temperature sensing and protection circuit.
US5336943A (en) * 1991-07-19 1994-08-09 U.S. Philips Corporation Temperature sensing circuit
US5563437A (en) * 1992-02-21 1996-10-08 Motorola, Inc. Semiconductor device having a large sense voltage
GB9206058D0 (en) * 1992-03-20 1992-05-06 Philips Electronics Uk Ltd A semiconductor switch and a temperature sensing circuit for such a switch
JP3982842B2 (ja) * 1993-08-18 2007-09-26 株式会社ルネサステクノロジ 半導体装置
GB9513420D0 (en) * 1995-06-30 1995-09-06 Philips Electronics Uk Ltd Power semiconductor devices
DE19534604C1 (de) * 1995-09-18 1996-10-24 Siemens Ag Durch Feldeffekt steuerbares Halbleiterbauelement mit mehreren Temperatursensoren zum Schutz vor Überlastung
DE19548060A1 (de) * 1995-12-21 1997-06-26 Siemens Ag Durch Feldeffekt steuerbares Leistungs-Halbleiterbauelement mit Temperatursensor
JP2000509906A (ja) * 1997-02-19 2000-08-02 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 温度センサ回路を有する出力半導体装置

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