JP2002520812A5 - - Google Patents
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- Publication number
- JP2002520812A5 JP2002520812A5 JP2000558545A JP2000558545A JP2002520812A5 JP 2002520812 A5 JP2002520812 A5 JP 2002520812A5 JP 2000558545 A JP2000558545 A JP 2000558545A JP 2000558545 A JP2000558545 A JP 2000558545A JP 2002520812 A5 JP2002520812 A5 JP 2002520812A5
- Authority
- JP
- Japan
- Prior art keywords
- composition
- choline
- compound
- integrated circuit
- weight
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 description 21
- -1 choline compound Chemical class 0.000 description 15
- 229960001231 choline Drugs 0.000 description 13
- 238000004519 manufacturing process Methods 0.000 description 7
- 239000003960 organic solvent Substances 0.000 description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- HMBHAQMOBKLWRX-UHFFFAOYSA-N 2,3-dihydro-1,4-benzodioxine-3-carboxylic acid Chemical compound C1=CC=C2OC(C(=O)O)COC2=C1 HMBHAQMOBKLWRX-UHFFFAOYSA-N 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 6
- 229940075419 choline hydroxide Drugs 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- 150000003377 silicon compounds Chemical class 0.000 description 6
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 239000001763 2-hydroxyethyl(trimethyl)azanium Substances 0.000 description 3
- 235000019743 Choline chloride Nutrition 0.000 description 3
- AVXURJPOCDRRFD-UHFFFAOYSA-N Hydroxylamine Chemical compound ON AVXURJPOCDRRFD-UHFFFAOYSA-N 0.000 description 3
- SGMZJAMFUVOLNK-UHFFFAOYSA-M choline chloride Chemical compound [Cl-].C[N+](C)(C)CCO SGMZJAMFUVOLNK-UHFFFAOYSA-M 0.000 description 3
- 229960003178 choline chloride Drugs 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- DQKGOGJIOHUEGK-UHFFFAOYSA-M hydron;2-hydroxyethyl(trimethyl)azanium;carbonate Chemical compound OC([O-])=O.C[N+](C)(C)CCO DQKGOGJIOHUEGK-UHFFFAOYSA-M 0.000 description 3
- 239000003112 inhibitor Substances 0.000 description 3
- 229910021332 silicide Inorganic materials 0.000 description 3
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 3
- GIAFURWZWWWBQT-UHFFFAOYSA-N 2-(2-aminoethoxy)ethanol Chemical compound NCCOCCO GIAFURWZWWWBQT-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 150000002443 hydroxylamines Chemical class 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US9202498P | 1998-07-06 | 1998-07-06 | |
| US60/092,024 | 1998-07-06 | ||
| PCT/US1999/015157 WO2000002238A1 (en) | 1998-07-06 | 1999-07-02 | Post etch cleaning composition and process for dual damascene system |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2002520812A JP2002520812A (ja) | 2002-07-09 |
| JP2002520812A5 true JP2002520812A5 (enExample) | 2006-08-31 |
Family
ID=22230935
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000558545A Pending JP2002520812A (ja) | 1998-07-06 | 1999-07-02 | デュアルダマシン系用のエッチング後洗浄組成物及び方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US6417112B1 (enExample) |
| EP (1) | EP1127370A4 (enExample) |
| JP (1) | JP2002520812A (enExample) |
| KR (1) | KR100645619B1 (enExample) |
| AU (1) | AU4969099A (enExample) |
| TW (1) | TW428241B (enExample) |
| WO (1) | WO2000002238A1 (enExample) |
Families Citing this family (55)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7547669B2 (en) * | 1998-07-06 | 2009-06-16 | Ekc Technology, Inc. | Remover compositions for dual damascene system |
| US7135445B2 (en) * | 2001-12-04 | 2006-11-14 | Ekc Technology, Inc. | Process for the use of bis-choline and tris-choline in the cleaning of quartz-coated polysilicon and other materials |
| US7579308B2 (en) | 1998-07-06 | 2009-08-25 | Ekc/Dupont Electronics Technologies | Compositions and processes for photoresist stripping and residue removal in wafer level packaging |
| US6858540B2 (en) | 2000-05-11 | 2005-02-22 | Applied Materials, Inc. | Selective removal of tantalum-containing barrier layer during metal CMP |
| US6753258B1 (en) * | 2000-11-03 | 2004-06-22 | Applied Materials Inc. | Integration scheme for dual damascene structure |
| WO2002045148A2 (de) * | 2000-11-29 | 2002-06-06 | Infineon Technologies Ag | Reinigungslösung für halbleiterscheiben im beol-bereich |
| US7012025B2 (en) | 2001-01-05 | 2006-03-14 | Applied Materials Inc. | Tantalum removal during chemical mechanical polishing |
| JP2002252222A (ja) * | 2001-02-22 | 2002-09-06 | Nec Corp | 半導体装置の製造方法、及び半導体装置 |
| US7104869B2 (en) | 2001-07-13 | 2006-09-12 | Applied Materials, Inc. | Barrier removal at low polish pressure |
| US7008554B2 (en) | 2001-07-13 | 2006-03-07 | Applied Materials, Inc. | Dual reduced agents for barrier removal in chemical mechanical polishing |
| US6821881B2 (en) | 2001-07-25 | 2004-11-23 | Applied Materials, Inc. | Method for chemical mechanical polishing of semiconductor substrates |
| KR20030023204A (ko) * | 2001-09-12 | 2003-03-19 | 삼성전자주식회사 | 포토레지스트용 스트리퍼 조성물 |
| US6573175B1 (en) * | 2001-11-30 | 2003-06-03 | Micron Technology, Inc. | Dry low k film application for interlevel dielectric and method of cleaning etched features |
| US6943142B2 (en) | 2002-01-09 | 2005-09-13 | Air Products And Chemicals, Inc. | Aqueous stripping and cleaning composition |
| US20030171239A1 (en) | 2002-01-28 | 2003-09-11 | Patel Bakul P. | Methods and compositions for chemically treating a substrate using foam technology |
| WO2003064581A1 (en) * | 2002-01-28 | 2003-08-07 | Ekc Technology, Inc. | Methods and compositions for chemically treating a substrate using foam technology |
| JP3516446B2 (ja) * | 2002-04-26 | 2004-04-05 | 東京応化工業株式会社 | ホトレジスト剥離方法 |
| JP4282054B2 (ja) * | 2002-09-09 | 2009-06-17 | 東京応化工業株式会社 | デュアルダマシン構造形成プロセスに用いられる洗浄液および基板の処理方法 |
| US6934032B1 (en) * | 2002-09-30 | 2005-08-23 | Advanced Micro Devices, Inc. | Copper oxide monitoring by scatterometry/ellipsometry during nitride or BLOK removal in damascene process |
| US7037174B2 (en) | 2002-10-03 | 2006-05-02 | Applied Materials, Inc. | Methods for reducing delamination during chemical mechanical polishing |
| KR100581279B1 (ko) | 2003-06-02 | 2006-05-17 | 삼성전자주식회사 | 포토레지스트 제거용 조성물 및 이를 이용한 반도체소자의 범프 형성방법 |
| US7205235B2 (en) | 2003-12-15 | 2007-04-17 | Freescale Semiconductor, Inc. | Method for reducing corrosion of metal surfaces during semiconductor processing |
| KR100562302B1 (ko) * | 2003-12-27 | 2006-03-22 | 동부아남반도체 주식회사 | 멀티 화학액 처리 단계를 이용한 랜덤 폴리머 제거 방법 |
| US7390744B2 (en) | 2004-01-29 | 2008-06-24 | Applied Materials, Inc. | Method and composition for polishing a substrate |
| JP2005277375A (ja) * | 2004-02-27 | 2005-10-06 | Nec Electronics Corp | 半導体装置の製造方法 |
| US7919445B2 (en) * | 2004-03-30 | 2011-04-05 | Basf Aktiengesellschaft | Aqueous solution for removing post-etch residue |
| US20060003910A1 (en) * | 2004-06-15 | 2006-01-05 | Hsu Jiun Y | Composition and method comprising same for removing residue from a substrate |
| US8030263B2 (en) * | 2004-07-01 | 2011-10-04 | Air Products And Chemicals, Inc. | Composition for stripping and cleaning and use thereof |
| US7456093B2 (en) * | 2004-07-03 | 2008-11-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for improving a semiconductor device delamination resistance |
| US9217929B2 (en) * | 2004-07-22 | 2015-12-22 | Air Products And Chemicals, Inc. | Composition for removing photoresist and/or etching residue from a substrate and use thereof |
| JP2006054251A (ja) * | 2004-08-10 | 2006-02-23 | Toshiba Corp | 半導体装置の製造方法 |
| US20070054482A1 (en) * | 2004-08-10 | 2007-03-08 | Takahito Nakajima | Semiconductor device fabrication method |
| JP3994992B2 (ja) * | 2004-08-13 | 2007-10-24 | 三菱瓦斯化学株式会社 | シリコン微細加工に用いる異方性エッチング剤組成物及びエッチング方法 |
| US7166543B2 (en) * | 2004-08-30 | 2007-01-23 | Micron Technology, Inc. | Methods for forming an enriched metal oxide surface for use in a semiconductor device |
| US20060094613A1 (en) * | 2004-10-29 | 2006-05-04 | Lee Wai M | Compositions and processes for photoresist stripping and residue removal in wafer level packaging |
| US20060094612A1 (en) * | 2004-11-04 | 2006-05-04 | Mayumi Kimura | Post etch cleaning composition for use with substrates having aluminum |
| KR100628215B1 (ko) * | 2004-12-24 | 2006-09-26 | 동부일렉트로닉스 주식회사 | 반도체 소자의 금속배선 형성방법 |
| US7923424B2 (en) * | 2005-02-14 | 2011-04-12 | Advanced Process Technologies, Llc | Semiconductor cleaning using superacids |
| US7879782B2 (en) * | 2005-10-13 | 2011-02-01 | Air Products And Chemicals, Inc. | Aqueous cleaning composition and method for using same |
| DE102005057061B3 (de) * | 2005-11-30 | 2007-06-14 | Advanced Micro Devices, Inc., Sunnyvale | Verfahren zum Entfernen einer Passivierungsschicht vor dem Abscheiden einer Barrierenschicht in einer Kupfer-metallisierungsschicht |
| KR100679822B1 (ko) * | 2005-12-14 | 2007-02-06 | 동부일렉트로닉스 주식회사 | 반도체 소자 및 그 제조 방법 |
| US20080174015A1 (en) * | 2007-01-23 | 2008-07-24 | Russell Thomas Herrin | Removal of etching process residual in semiconductor fabrication |
| JPWO2009096480A1 (ja) * | 2008-01-30 | 2011-05-26 | 日産化学工業株式会社 | ハードマスク用除去組成物および除去方法 |
| MY157093A (en) | 2009-05-07 | 2016-04-29 | Basf Se | Resist stripping compositions and methods for manufacturing electrical devices |
| US8765653B2 (en) * | 2009-07-07 | 2014-07-01 | Air Products And Chemicals, Inc. | Formulations and method for post-CMP cleaning |
| SG10201404328QA (en) * | 2009-07-30 | 2014-10-30 | Basf Se | Post ion implant stripper for advanced semiconductor application |
| WO2011031028A2 (en) * | 2009-09-09 | 2011-03-17 | Dongwoo Fine-Chem Co., Ltd. | Resist stripper composition for forming copper-based wiring |
| EP2808735B1 (en) * | 2012-01-27 | 2017-03-22 | Asahi Kasei Kabushiki Kaisha | Fine concavo-convex structure product, mold fabrication method, and use of a heat-reactive resist material |
| US8871639B2 (en) * | 2013-01-04 | 2014-10-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor devices and methods of manufacture thereof |
| MY182325A (en) * | 2013-04-11 | 2021-01-19 | Taminco | Improved process for preparing choline hydroxide |
| EP3721297B1 (en) * | 2017-12-08 | 2024-02-07 | Henkel AG & Co. KGaA | Photoresist stripper compostion |
| US11643384B2 (en) * | 2018-04-26 | 2023-05-09 | Kurita Water Industries Ltd. | Stabilization of compositions comprising quaternary trialkylalkanolamine hydroxide |
| WO2021121552A1 (en) * | 2019-12-17 | 2021-06-24 | Henkel Ag & Co. Kgaa | Photoresist stripping composition |
| JP7629284B2 (ja) * | 2020-09-04 | 2025-02-13 | 花王株式会社 | 樹脂マスク剥離用洗浄剤組成物 |
| US12046476B2 (en) * | 2022-03-25 | 2024-07-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Wet etching chemistry and method of forming semiconductor device using the same |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4686002A (en) | 1986-07-18 | 1987-08-11 | Syntex (U.S.A.) Inc. | Stabilized choline base solutions |
| US5209858A (en) * | 1991-02-06 | 1993-05-11 | E. I. Du Pont De Nemours And Company | Stabilization of choline and its derivatives against discoloration |
| US5739579A (en) * | 1992-06-29 | 1998-04-14 | Intel Corporation | Method for forming interconnections for semiconductor fabrication and semiconductor device having such interconnections |
| JP2857042B2 (ja) * | 1993-10-19 | 1999-02-10 | 新日本製鐵株式会社 | シリコン半導体およびシリコン酸化物の洗浄液 |
| US5554320A (en) * | 1993-11-22 | 1996-09-10 | Yianakopoulos; Georges | Liquid cleaning compositions |
| JP3236220B2 (ja) * | 1995-11-13 | 2001-12-10 | 東京応化工業株式会社 | レジスト用剥離液組成物 |
| US6030932A (en) | 1996-09-06 | 2000-02-29 | Olin Microelectronic Chemicals | Cleaning composition and method for removing residues |
| JPH10289891A (ja) | 1997-04-11 | 1998-10-27 | Mitsubishi Gas Chem Co Inc | 半導体回路用洗浄剤及びそれを用いた半導体回路の製造方法 |
| US5891799A (en) | 1997-08-18 | 1999-04-06 | Industrial Technology Research Institute | Method for making stacked and borderless via structures for multilevel metal interconnections on semiconductor substrates |
| US5877075A (en) * | 1997-10-14 | 1999-03-02 | Industrial Technology Research Institute | Dual damascene process using single photoresist process |
-
1999
- 1999-06-30 US US09/343,532 patent/US6417112B1/en not_active Expired - Lifetime
- 1999-07-02 KR KR1020017000187A patent/KR100645619B1/ko not_active Expired - Fee Related
- 1999-07-02 WO PCT/US1999/015157 patent/WO2000002238A1/en not_active Ceased
- 1999-07-02 AU AU49690/99A patent/AU4969099A/en not_active Abandoned
- 1999-07-02 JP JP2000558545A patent/JP2002520812A/ja active Pending
- 1999-07-02 EP EP99933689A patent/EP1127370A4/en not_active Withdrawn
- 1999-07-06 TW TW088111444A patent/TW428241B/zh not_active IP Right Cessation
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