JP2002520812A - デュアルダマシン系用のエッチング後洗浄組成物及び方法 - Google Patents

デュアルダマシン系用のエッチング後洗浄組成物及び方法

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Publication number
JP2002520812A
JP2002520812A JP2000558545A JP2000558545A JP2002520812A JP 2002520812 A JP2002520812 A JP 2002520812A JP 2000558545 A JP2000558545 A JP 2000558545A JP 2000558545 A JP2000558545 A JP 2000558545A JP 2002520812 A JP2002520812 A JP 2002520812A
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JP
Japan
Prior art keywords
choline
composition
integrated circuit
compound
copper
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000558545A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002520812A5 (enExample
Inventor
キャサリン エム ペイン
デイビッド ジェイ マロニー
シハイング リー
ワイ ムン リー
レスリー ダブリュ アークレス
Original Assignee
イーケイシー テクノロジー インコーポレーテッド
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by イーケイシー テクノロジー インコーポレーテッド filed Critical イーケイシー テクノロジー インコーポレーテッド
Publication of JP2002520812A publication Critical patent/JP2002520812A/ja
Publication of JP2002520812A5 publication Critical patent/JP2002520812A5/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
    • C23G1/02—Cleaning or pickling metallic material with solutions or molten salts with acid solutions
    • C23G1/04—Cleaning or pickling metallic material with solutions or molten salts with acid solutions using inhibitors
    • C23G1/06—Cleaning or pickling metallic material with solutions or molten salts with acid solutions using inhibitors organic inhibitors
    • C23G1/061—Cleaning or pickling metallic material with solutions or molten salts with acid solutions using inhibitors organic inhibitors nitrogen-containing compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
    • C23G1/14—Cleaning or pickling metallic material with solutions or molten salts with alkaline solutions
    • C23G1/16—Cleaning or pickling metallic material with solutions or molten salts with alkaline solutions using inhibitors
    • C23G1/18—Organic inhibitors
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
    • C23G1/14—Cleaning or pickling metallic material with solutions or molten salts with alkaline solutions
    • C23G1/20—Other heavy metals
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
    • H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76814—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics post-treatment or after-treatment, e.g. cleaning or removal of oxides on underlying conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/963—Removing process residues from vertical substrate surfaces

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
JP2000558545A 1998-07-06 1999-07-02 デュアルダマシン系用のエッチング後洗浄組成物及び方法 Pending JP2002520812A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US9202498P 1998-07-06 1998-07-06
US60/092,024 1998-07-06
PCT/US1999/015157 WO2000002238A1 (en) 1998-07-06 1999-07-02 Post etch cleaning composition and process for dual damascene system

Publications (2)

Publication Number Publication Date
JP2002520812A true JP2002520812A (ja) 2002-07-09
JP2002520812A5 JP2002520812A5 (enExample) 2006-08-31

Family

ID=22230935

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000558545A Pending JP2002520812A (ja) 1998-07-06 1999-07-02 デュアルダマシン系用のエッチング後洗浄組成物及び方法

Country Status (7)

Country Link
US (1) US6417112B1 (enExample)
EP (1) EP1127370A4 (enExample)
JP (1) JP2002520812A (enExample)
KR (1) KR100645619B1 (enExample)
AU (1) AU4969099A (enExample)
TW (1) TW428241B (enExample)
WO (1) WO2000002238A1 (enExample)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007510173A (ja) * 2003-10-22 2007-04-19 イーケーシー テクノロジー，インコーポレイティド 石英で被覆したポリシリコンおよびその他の資材の洗浄におけるビスコリンおよびトリスコリンの使用工程
JP2008519295A (ja) * 2004-10-29 2008-06-05 イーケイシー テクノロジー インコーポレーテッド ウェーハレベルパッケージングにおけるフォトレジストストリッピングと残渣除去のための組成物及び方法
WO2009096480A1 (ja) * 2008-01-30 2009-08-06 Nissan Chemical Industries, Ltd. ハードマスク用除去組成物および除去方法
JP2011040722A (ja) * 2009-07-07 2011-02-24 Air Products & Chemicals Inc Ｃｍｐ後洗浄のための配合物及び方法
JP2012526374A (ja) * 2009-05-07 2012-10-25 ビーエーエスエフ ソシエタス・ヨーロピア レジストストリッピング組成物及び電気装置を製造するための方法
JP2013500503A (ja) * 2009-07-30 2013-01-07 ビーエーエスエフ ソシエタス・ヨーロピア 高度な半導体応用のためのポストイオン注入フォトレジスト剥離用組成物
JP2013504782A (ja) * 2009-09-09 2013-02-07 ドンウ ファイン−ケム カンパニー．，リミティド． 銅系配線の形成のためのレジスト除去用組成物
JP2016516759A (ja) * 2013-04-11 2016-06-09 タミンコ コリン水酸化物を製造するための改良した方法
JP2022043812A (ja) * 2020-09-04 2022-03-16 花王株式会社 樹脂マスク剥離用洗浄剤組成物

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US6858540B2 (en) 2000-05-11 2005-02-22 Applied Materials, Inc. Selective removal of tantalum-containing barrier layer during metal CMP
US6753258B1 (en) * 2000-11-03 2004-06-22 Applied Materials Inc. Integration scheme for dual damascene structure
WO2002045148A2 (de) * 2000-11-29 2002-06-06 Infineon Technologies Ag Reinigungslösung für halbleiterscheiben im beol-bereich
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JP2002252222A (ja) * 2001-02-22 2002-09-06 Nec Corp 半導体装置の製造方法、及び半導体装置
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KR20030023204A (ko) * 2001-09-12 2003-03-19 삼성전자주식회사 포토레지스트용 스트리퍼 조성물
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WO2003064581A1 (en) * 2002-01-28 2003-08-07 Ekc Technology, Inc. Methods and compositions for chemically treating a substrate using foam technology
JP3516446B2 (ja) * 2002-04-26 2004-04-05 東京応化工業株式会社 ホトレジスト剥離方法
JP4282054B2 (ja) * 2002-09-09 2009-06-17 東京応化工業株式会社 デュアルダマシン構造形成プロセスに用いられる洗浄液および基板の処理方法
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KR100562302B1 (ko) * 2003-12-27 2006-03-22 동부아남반도체 주식회사 멀티 화학액 처리 단계를 이용한 랜덤 폴리머 제거 방법
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JP2005277375A (ja) * 2004-02-27 2005-10-06 Nec Electronics Corp 半導体装置の製造方法
CN101065837A (zh) * 2004-03-30 2007-10-31 巴斯福股份公司 用于去除蚀刻后残留物的水溶液
US20060003910A1 (en) * 2004-06-15 2006-01-05 Hsu Jiun Y Composition and method comprising same for removing residue from a substrate
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US7456093B2 (en) * 2004-07-03 2008-11-25 Taiwan Semiconductor Manufacturing Co., Ltd. Method for improving a semiconductor device delamination resistance
US9217929B2 (en) * 2004-07-22 2015-12-22 Air Products And Chemicals, Inc. Composition for removing photoresist and/or etching residue from a substrate and use thereof
JP2006054251A (ja) * 2004-08-10 2006-02-23 Toshiba Corp 半導体装置の製造方法
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JP3994992B2 (ja) * 2004-08-13 2007-10-24 三菱瓦斯化学株式会社 シリコン微細加工に用いる異方性エッチング剤組成物及びエッチング方法
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US7923424B2 (en) * 2005-02-14 2011-04-12 Advanced Process Technologies, Llc Semiconductor cleaning using superacids
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DE102005057061B3 (de) * 2005-11-30 2007-06-14 Advanced Micro Devices, Inc., Sunnyvale Verfahren zum Entfernen einer Passivierungsschicht vor dem Abscheiden einer Barrierenschicht in einer Kupfer-metallisierungsschicht
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WO2013111812A1 (ja) * 2012-01-27 2013-08-01 旭化成株式会社 微細凹凸構造体、ドライエッチング用熱反応型レジスト材料、モールドの製造方法及びモールド
US8871639B2 (en) * 2013-01-04 2014-10-28 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor devices and methods of manufacture thereof
KR102471495B1 (ko) 2017-12-08 2022-11-28 헨켈 아게 운트 코. 카게아아 포토레지스트 스트리퍼 조성물
WO2019207701A1 (en) * 2018-04-26 2019-10-31 Kurita Water Industries Ltd. Stabilization of compositions comprising quaternary trialkylalkanolamine hydroxide
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Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007510173A (ja) * 2003-10-22 2007-04-19 イーケーシー テクノロジー，インコーポレイティド 石英で被覆したポリシリコンおよびその他の資材の洗浄におけるビスコリンおよびトリスコリンの使用工程
JP2008519295A (ja) * 2004-10-29 2008-06-05 イーケイシー テクノロジー インコーポレーテッド ウェーハレベルパッケージングにおけるフォトレジストストリッピングと残渣除去のための組成物及び方法
WO2009096480A1 (ja) * 2008-01-30 2009-08-06 Nissan Chemical Industries, Ltd. ハードマスク用除去組成物および除去方法
JP2012526374A (ja) * 2009-05-07 2012-10-25 ビーエーエスエフ ソシエタス・ヨーロピア レジストストリッピング組成物及び電気装置を製造するための方法
JP2011040722A (ja) * 2009-07-07 2011-02-24 Air Products & Chemicals Inc Ｃｍｐ後洗浄のための配合物及び方法
US8765653B2 (en) 2009-07-07 2014-07-01 Air Products And Chemicals, Inc. Formulations and method for post-CMP cleaning
JP2013500503A (ja) * 2009-07-30 2013-01-07 ビーエーエスエフ ソシエタス・ヨーロピア 高度な半導体応用のためのポストイオン注入フォトレジスト剥離用組成物
JP2013504782A (ja) * 2009-09-09 2013-02-07 ドンウ ファイン−ケム カンパニー．，リミティド． 銅系配線の形成のためのレジスト除去用組成物
JP2016516759A (ja) * 2013-04-11 2016-06-09 タミンコ コリン水酸化物を製造するための改良した方法
JP2022043812A (ja) * 2020-09-04 2022-03-16 花王株式会社 樹脂マスク剥離用洗浄剤組成物
JP7629284B2 (ja) 2020-09-04 2025-02-13 花王株式会社 樹脂マスク剥離用洗浄剤組成物

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KR20010080865A (ko) 2001-08-25
AU4969099A (en) 2000-01-24
EP1127370A4 (en) 2001-08-29
US6417112B1 (en) 2002-07-09
KR100645619B1 (ko) 2006-11-13

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