JP2002518825A5 - - Google Patents

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Publication number
JP2002518825A5
JP2002518825A5 JP2000553985A JP2000553985A JP2002518825A5 JP 2002518825 A5 JP2002518825 A5 JP 2002518825A5 JP 2000553985 A JP2000553985 A JP 2000553985A JP 2000553985 A JP2000553985 A JP 2000553985A JP 2002518825 A5 JP2002518825 A5 JP 2002518825A5
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000553985A
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JP2002518825A (ja
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Publication date
Priority claimed from US09/127,762 external-priority patent/US6071822A/en
Application filed filed Critical
Publication of JP2002518825A publication Critical patent/JP2002518825A/ja
Publication of JP2002518825A5 publication Critical patent/JP2002518825A5/ja
Pending legal-status Critical Current

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JP2000553985A 1998-06-08 1999-06-08 実質的にアンダカットのないシリコンを絶縁体構造上に作製するエッチング工程 Pending JP2002518825A (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US8846098P 1998-06-08 1998-06-08
US60/088,460 1998-06-08
US09/127,762 1998-07-31
US09/127,762 US6071822A (en) 1998-06-08 1998-07-31 Etching process for producing substantially undercut free silicon on insulator structures
PCT/US1999/011809 WO1999065065A1 (en) 1998-06-08 1999-06-08 Etching process for producing substantially undercut free silicon on insulator structures

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2010157388A Division JP2010283362A (ja) 1998-06-08 2010-07-12 実質的にアンダカットのないシリコンを絶縁体構造上に作製するエッチング工程

Publications (2)

Publication Number Publication Date
JP2002518825A JP2002518825A (ja) 2002-06-25
JP2002518825A5 true JP2002518825A5 (ja) 2006-07-20

Family

ID=26778680

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2000553985A Pending JP2002518825A (ja) 1998-06-08 1999-06-08 実質的にアンダカットのないシリコンを絶縁体構造上に作製するエッチング工程
JP2010157388A Pending JP2010283362A (ja) 1998-06-08 2010-07-12 実質的にアンダカットのないシリコンを絶縁体構造上に作製するエッチング工程

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2010157388A Pending JP2010283362A (ja) 1998-06-08 2010-07-12 実質的にアンダカットのないシリコンを絶縁体構造上に作製するエッチング工程

Country Status (5)

Country Link
US (1) US6071822A (ja)
EP (1) EP1110235A1 (ja)
JP (2) JP2002518825A (ja)
KR (1) KR100613842B1 (ja)
WO (1) WO1999065065A1 (ja)

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US7588948B2 (en) * 2003-04-17 2009-09-15 X-Fab Semiconductor Foundries Ag Test structure for electrically verifying the depths of trench-etching in an SOI wafer, and associated working methods
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US8491076B2 (en) 2004-03-15 2013-07-23 Fujifilm Dimatix, Inc. Fluid droplet ejection devices and methods
US7281778B2 (en) 2004-03-15 2007-10-16 Fujifilm Dimatix, Inc. High frequency droplet ejection device and method
US7396769B2 (en) * 2004-08-02 2008-07-08 Lam Research Corporation Method for stripping photoresist from etched wafer
JP4629421B2 (ja) * 2004-12-06 2011-02-09 パナソニック株式会社 ドライエッチング方法及びドライエッチング装置
US7459100B2 (en) * 2004-12-22 2008-12-02 Lam Research Corporation Methods and apparatus for sequentially alternating among plasma processes in order to optimize a substrate
KR20070087223A (ko) 2004-12-30 2007-08-27 후지필름 디마틱스, 인크. 잉크 분사 프린팅
US7241683B2 (en) * 2005-03-08 2007-07-10 Lam Research Corporation Stabilized photoresist structure for etching process
US7491647B2 (en) * 2005-03-08 2009-02-17 Lam Research Corporation Etch with striation control
JP4275096B2 (ja) * 2005-04-14 2009-06-10 パナソニック株式会社 半導体チップの製造方法
US20060261436A1 (en) * 2005-05-19 2006-11-23 Freescale Semiconductor, Inc. Electronic device including a trench field isolation region and a process for forming the same
JP4512533B2 (ja) * 2005-07-27 2010-07-28 住友精密工業株式会社 エッチング方法及びエッチング装置
US7910489B2 (en) * 2006-02-17 2011-03-22 Lam Research Corporation Infinitely selective photoresist mask etch
US7670895B2 (en) 2006-04-24 2010-03-02 Freescale Semiconductor, Inc Process of forming an electronic device including a semiconductor layer and another layer adjacent to an opening within the semiconductor layer
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US7491622B2 (en) * 2006-04-24 2009-02-17 Freescale Semiconductor, Inc. Process of forming an electronic device including a layer formed using an inductively coupled plasma
US7528078B2 (en) 2006-05-12 2009-05-05 Freescale Semiconductor, Inc. Process of forming electronic device including a densified nitride layer adjacent to an opening within a semiconductor layer
JP4812512B2 (ja) * 2006-05-19 2011-11-09 オンセミコンダクター・トレーディング・リミテッド 半導体装置の製造方法
KR100875442B1 (ko) 2006-12-28 2008-12-23 주식회사 래디언테크 웨이퍼 식각 방법
US7988247B2 (en) 2007-01-11 2011-08-02 Fujifilm Dimatix, Inc. Ejection of drops having variable drop size from an ink jet printer
JP5250476B2 (ja) * 2009-05-11 2013-07-31 株式会社日立ハイテクノロジーズ ドライエッチング方法
JP2011100760A (ja) * 2009-11-04 2011-05-19 Ulvac Japan Ltd エッチング方法
US8467221B2 (en) 2010-07-09 2013-06-18 International Business Machines Corporation Magnetic spin shift register memory
US9105705B2 (en) 2011-03-14 2015-08-11 Plasma-Therm Llc Method and apparatus for plasma dicing a semi-conductor wafer
US8802545B2 (en) 2011-03-14 2014-08-12 Plasma-Therm Llc Method and apparatus for plasma dicing a semi-conductor wafer
US8637381B2 (en) * 2011-10-17 2014-01-28 International Business Machines Corporation High-k dielectric and silicon nitride box region
US8691698B2 (en) 2012-02-08 2014-04-08 Lam Research Corporation Controlled gas mixing for smooth sidewall rapid alternating etch process
JP6093929B2 (ja) * 2012-07-04 2017-03-15 サムコ株式会社 高アスペクト比の凹凸構造を有するシリコン基板の製造方法
US9892931B2 (en) * 2013-10-14 2018-02-13 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor manufacturing apparatus and method thereof
CN105448697B (zh) * 2014-07-18 2018-05-01 中微半导体设备(上海)有限公司 高深宽比结构的刻蚀方法及mems器件的制作方法
US11173486B2 (en) 2019-02-13 2021-11-16 International Business Machines Corporation Fluidic cavities for on-chip layering and sealing of separation arrays
JP7382578B2 (ja) * 2019-12-27 2023-11-17 パナソニックＩｐマネジメント株式会社 プラズマ処理方法および素子チップの製造方法
WO2022072160A2 (en) * 2020-09-18 2022-04-07 Lam Research Corporation Passivation chemistry for plasma etching
JP7257088B1 (ja) 2022-03-24 2023-04-13 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理システム

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JPH0845903A (ja) * 1994-07-27 1996-02-16 Hitachi Ltd プラズマエッチング方法
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