JP2002319663A5 - - Google Patents

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Publication number
JP2002319663A5
JP2002319663A5 JP2001122882A JP2001122882A JP2002319663A5 JP 2002319663 A5 JP2002319663 A5 JP 2002319663A5 JP 2001122882 A JP2001122882 A JP 2001122882A JP 2001122882 A JP2001122882 A JP 2001122882A JP 2002319663 A5 JP2002319663 A5 JP 2002319663A5
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JP
Japan
Prior art keywords
wiring
memory device
semiconductor memory
spaced apart
magnetoresistive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2001122882A
Other languages
English (en)
Japanese (ja)
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JP4488645B2 (ja
JP2002319663A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from JP2001122882A external-priority patent/JP4488645B2/ja
Priority to JP2001122882A priority Critical patent/JP4488645B2/ja
Priority to TW091107611A priority patent/TW543086B/zh
Priority to KR10-2002-0021257A priority patent/KR100470848B1/ko
Priority to US10/125,485 priority patent/US6617658B2/en
Priority to CNB021161240A priority patent/CN1187824C/zh
Publication of JP2002319663A publication Critical patent/JP2002319663A/ja
Priority to US10/615,188 priority patent/US6764865B2/en
Priority to US10/866,129 priority patent/US6967864B2/en
Publication of JP2002319663A5 publication Critical patent/JP2002319663A5/ja
Publication of JP4488645B2 publication Critical patent/JP4488645B2/ja
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2001122882A 2001-04-20 2001-04-20 磁気記憶装置 Expired - Fee Related JP4488645B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2001122882A JP4488645B2 (ja) 2001-04-20 2001-04-20 磁気記憶装置
TW091107611A TW543086B (en) 2001-04-20 2002-04-15 Semiconductor memory device and method of fabricating the same
KR10-2002-0021257A KR100470848B1 (ko) 2001-04-20 2002-04-18 반도체 기억 장치 및 그 제조 방법
CNB021161240A CN1187824C (zh) 2001-04-20 2002-04-19 半导体存储装置及其制造方法
US10/125,485 US6617658B2 (en) 2001-04-20 2002-04-19 Semiconductor memory device including magneto resistive element
US10/615,188 US6764865B2 (en) 2001-04-20 2003-07-09 Semiconductor memory device including magneto resistive element and method of fabricating the same
US10/866,129 US6967864B2 (en) 2001-04-20 2004-06-14 Semiconductor memory device including magneto resistive element and method of fabricating the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001122882A JP4488645B2 (ja) 2001-04-20 2001-04-20 磁気記憶装置

Publications (3)

Publication Number Publication Date
JP2002319663A JP2002319663A (ja) 2002-10-31
JP2002319663A5 true JP2002319663A5 (https=) 2005-08-25
JP4488645B2 JP4488645B2 (ja) 2010-06-23

Family

ID=18972525

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001122882A Expired - Fee Related JP4488645B2 (ja) 2001-04-20 2001-04-20 磁気記憶装置

Country Status (5)

Country Link
US (3) US6617658B2 (https=)
JP (1) JP4488645B2 (https=)
KR (1) KR100470848B1 (https=)
CN (1) CN1187824C (https=)
TW (1) TW543086B (https=)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6689661B2 (en) * 2001-04-10 2004-02-10 Micron Technology, Inc. Method for forming minimally spaced MRAM structures
JP3884312B2 (ja) * 2002-03-28 2007-02-21 株式会社東芝 磁気記憶装置
US6897532B1 (en) * 2002-04-15 2005-05-24 Cypress Semiconductor Corp. Magnetic tunneling junction configuration and a method for making the same
US6828639B2 (en) * 2002-07-17 2004-12-07 Micron Technology, Inc. Process flow for building MRAM structures
JP4509467B2 (ja) * 2002-11-08 2010-07-21 シャープ株式会社 不揮発可変抵抗素子、及び記憶装置
US7221584B2 (en) * 2004-08-13 2007-05-22 Taiwan Semiconductor Manufacturing Company, Ltd. MRAM cell having shared configuration
US7319262B2 (en) * 2004-08-13 2008-01-15 Taiwan Semiconductor Manufacturing Company, Ltd. MRAM over sloped pillar
US7088612B2 (en) * 2004-08-20 2006-08-08 Infineon Technologies Ag MRAM with vertical storage element in two layer-arrangement and field sensor
US7416905B2 (en) * 2005-10-17 2008-08-26 International Busniess Machines Corporation Method of fabricating a magnetic shift register
US8679860B1 (en) * 2006-08-07 2014-03-25 Sandia Corporation Lateral electrodeposition of compositionally modulated metal layers
JP4343940B2 (ja) * 2006-10-31 2009-10-14 Ｔｄｋ株式会社 磁気抵抗効果素子、薄膜磁気ヘッド、ヘッドジンバルアセンブリ、ハードディスク装置および磁気抵抗効果素子の製造方法
US7919794B2 (en) * 2008-01-08 2011-04-05 Qualcomm, Incorporated Memory cell and method of forming a magnetic tunnel junction (MTJ) of a memory cell
US7579197B1 (en) * 2008-03-04 2009-08-25 Qualcomm Incorporated Method of forming a magnetic tunnel junction structure
US8634231B2 (en) * 2009-08-24 2014-01-21 Qualcomm Incorporated Magnetic tunnel junction structure
US7781231B2 (en) * 2008-03-07 2010-08-24 Qualcomm Incorporated Method of forming a magnetic tunnel junction device
US7885105B2 (en) * 2008-03-25 2011-02-08 Qualcomm Incorporated Magnetic tunnel junction cell including multiple vertical magnetic domains
US9614003B1 (en) * 2015-10-21 2017-04-04 Globalfoundries Inc. Method of forming a memory device structure and memory device structure
US20190140167A1 (en) * 2017-11-07 2019-05-09 Everspin Technologies, Inc. Angled surface removal process and structure relating thereto
WO2023026481A1 (ja) * 2021-08-27 2023-03-02 Tdk株式会社 磁気抵抗効果素子及び磁気メモリ
TWI809966B (zh) * 2022-05-17 2023-07-21 南亞科技股份有限公司 具有氟捕捉層的半導體元件結構
US12308319B2 (en) 2022-05-17 2025-05-20 Nanya Technology Corporation Semiconductor device structure with fluorine-catching layer
US12308290B2 (en) 2022-05-17 2025-05-20 Nanya Technology Corporation Method for preparing semiconductor device structure with fluorine-catching layer

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5640343A (en) * 1996-03-18 1997-06-17 International Business Machines Corporation Magnetic memory array using magnetic tunnel junction devices in the memory cells
US5835314A (en) 1996-04-17 1998-11-10 Massachusetts Institute Of Technology Tunnel junction device for storage and switching of signals
US5920500A (en) * 1996-08-23 1999-07-06 Motorola, Inc. Magnetic random access memory having stacked memory cells and fabrication method therefor
JP3593652B2 (ja) * 2000-03-03 2004-11-24 富士通株式会社 磁気ランダムアクセスメモリ装置
US6515341B2 (en) * 2001-02-26 2003-02-04 Motorola, Inc. Magnetoelectronics element having a stressed over-layer configured for alteration of the switching energy barrier

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