JP2002313721A5 - - Google Patents

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Publication number
JP2002313721A5
JP2002313721A5 JP2001376993A JP2001376993A JP2002313721A5 JP 2002313721 A5 JP2002313721 A5 JP 2002313721A5 JP 2001376993 A JP2001376993 A JP 2001376993A JP 2001376993 A JP2001376993 A JP 2001376993A JP 2002313721 A5 JP2002313721 A5 JP 2002313721A5
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JP
Japan
Prior art keywords
semiconductor layer
semiconductor
manufacturing
semiconductor device
layer
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Application number
JP2001376993A
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English (en)
Japanese (ja)
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JP4511092B2 (ja
JP2002313721A (ja
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Priority to US10/011,292 priority Critical patent/US20020090772A1/en
Priority to JP2001376993A priority patent/JP4511092B2/ja
Priority claimed from JP2001376993A external-priority patent/JP4511092B2/ja
Publication of JP2002313721A publication Critical patent/JP2002313721A/ja
Publication of JP2002313721A5 publication Critical patent/JP2002313721A5/ja
Application granted granted Critical
Publication of JP4511092B2 publication Critical patent/JP4511092B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2001376993A 2000-12-11 2001-12-11 半導体素子の製造方法 Expired - Fee Related JP4511092B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US10/011,292 US20020090772A1 (en) 2000-12-11 2001-12-11 Method for manufacturing semiconductor lamination, method for manufacturing lamination, semiconductor device, and electronic equipment
JP2001376993A JP4511092B2 (ja) 2000-12-11 2001-12-11 半導体素子の製造方法

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2000-376293 2000-12-11
JP2000376293 2000-12-11
JP2001-32513 2001-02-08
JP2001032513 2001-02-08
JP2001376993A JP4511092B2 (ja) 2000-12-11 2001-12-11 半導体素子の製造方法

Publications (3)

Publication Number Publication Date
JP2002313721A JP2002313721A (ja) 2002-10-25
JP2002313721A5 true JP2002313721A5 (https=) 2005-07-14
JP4511092B2 JP4511092B2 (ja) 2010-07-28

Family

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Family Applications (1)

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JP2001376993A Expired - Fee Related JP4511092B2 (ja) 2000-12-11 2001-12-11 半導体素子の製造方法

Country Status (2)

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US (1) US20020090772A1 (https=)
JP (1) JP4511092B2 (https=)

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US7045836B2 (en) * 2003-07-31 2006-05-16 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structure having a strained region and a method of fabricating same
US7495267B2 (en) * 2003-09-08 2009-02-24 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structure having a strained region and a method of fabricating same
US20050217722A1 (en) * 2004-03-31 2005-10-06 Takahiro Komatsu Organic photoelectric conversion element and method of producing the same, organic photodiode and image sensor using the same, organic diode and method of producing the same
US7202145B2 (en) * 2004-06-03 2007-04-10 Taiwan Semiconductor Manufacturing Company Strained Si formed by anneal
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US8138066B2 (en) 2008-10-01 2012-03-20 International Business Machines Corporation Dislocation engineering using a scanned laser
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WO2012079113A1 (en) * 2010-12-15 2012-06-21 Newsouth Innovations Pty Limited A method of forming a germanium layer on a silicon substrate and a photovoltaic device including a germanium layer
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JP6486735B2 (ja) * 2015-03-17 2019-03-20 東芝メモリ株式会社 半導体製造方法および半導体製造装置
CN104934330A (zh) * 2015-05-08 2015-09-23 京东方科技集团股份有限公司 一种薄膜晶体管及其制备方法、阵列基板和显示面板
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