JP2008053394A5 - - Google Patents

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Publication number
JP2008053394A5
JP2008053394A5 JP2006227265A JP2006227265A JP2008053394A5 JP 2008053394 A5 JP2008053394 A5 JP 2008053394A5 JP 2006227265 A JP2006227265 A JP 2006227265A JP 2006227265 A JP2006227265 A JP 2006227265A JP 2008053394 A5 JP2008053394 A5 JP 2008053394A5
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JP
Japan
Prior art keywords
wave laser
continuous wave
region
substrate
manufacturing
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Application number
JP2006227265A
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English (en)
Japanese (ja)
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JP5085902B2 (ja
JP2008053394A (ja
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Priority to JP2006227265A priority Critical patent/JP5085902B2/ja
Priority claimed from JP2006227265A external-priority patent/JP5085902B2/ja
Priority to US11/882,828 priority patent/US7732268B2/en
Publication of JP2008053394A publication Critical patent/JP2008053394A/ja
Publication of JP2008053394A5 publication Critical patent/JP2008053394A5/ja
Application granted granted Critical
Publication of JP5085902B2 publication Critical patent/JP5085902B2/ja
Expired - Fee Related legal-status Critical Current
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JP2006227265A 2006-08-24 2006-08-24 表示装置の製造方法 Expired - Fee Related JP5085902B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2006227265A JP5085902B2 (ja) 2006-08-24 2006-08-24 表示装置の製造方法
US11/882,828 US7732268B2 (en) 2006-08-24 2007-08-06 Manufacturing method of display device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006227265A JP5085902B2 (ja) 2006-08-24 2006-08-24 表示装置の製造方法

Publications (3)

Publication Number Publication Date
JP2008053394A JP2008053394A (ja) 2008-03-06
JP2008053394A5 true JP2008053394A5 (https=) 2009-07-09
JP5085902B2 JP5085902B2 (ja) 2012-11-28

Family

ID=39197202

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006227265A Expired - Fee Related JP5085902B2 (ja) 2006-08-24 2006-08-24 表示装置の製造方法

Country Status (2)

Country Link
US (1) US7732268B2 (https=)
JP (1) JP5085902B2 (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5068972B2 (ja) * 2006-09-12 2012-11-07 富士フイルム株式会社 レーザアニール装置、半導体膜基板、素子基板、及び電気光学装置
WO2010032519A1 (ja) 2008-09-18 2010-03-25 シャープ株式会社 母基板及びその製造方法、並びにデバイス基板
JP2010108957A (ja) * 2008-10-28 2010-05-13 Hitachi Displays Ltd 表示装置およびその製造方法
WO2013051221A1 (ja) * 2011-10-03 2013-04-11 パナソニック株式会社 薄膜素子、薄膜素子アレイ及び薄膜素子の製造方法
KR102014167B1 (ko) * 2012-12-06 2019-10-22 삼성디스플레이 주식회사 다결정 실리콘층의 제조 방법, 상기 다결정 실리콘층의 제조 방법을 포함하는 유기 발광 표시 장치의 제조 방법, 및 그 제조 방법에 의해 제조된 유기 발광 표시 장치
NL2013715B1 (en) * 2014-10-30 2016-10-04 Univ Delft Tech Low-temperature formation of thin-film structures.
WO2016068713A1 (en) * 2014-10-30 2016-05-06 Technische Universiteit Delft Low-temperature formation of thin-film structures
JP7203417B2 (ja) * 2019-01-31 2023-01-13 株式会社ブイ・テクノロジー レーザアニール方法、レーザアニール装置、およびｔｆｔ基板
JP7632873B2 (ja) * 2021-02-26 2025-02-19 株式会社ブイ・テクノロジー レーザアニール装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62160781A (ja) * 1986-01-09 1987-07-16 Agency Of Ind Science & Technol レ−ザ光照射装置
JP3026520B2 (ja) * 1991-08-23 2000-03-27 東京エレクトロン株式会社 液晶表示装置の製造装置
JPH0661172A (ja) * 1992-08-07 1994-03-04 Fuji Xerox Co Ltd エキシマレ−ザアニ−ル装置
MY109592A (en) 1992-11-16 1997-03-31 Tokyo Electron Ltd Method and apparatus for manufacturing a liquid crystal display substrate, and apparatus and method for evaluating semiconductor crystals.
JP3196132B2 (ja) * 1992-11-16 2001-08-06 東京エレクトロン株式会社 液晶ディスプレイ基板の製造方法、半導体結晶の評価方法、半導体結晶薄膜の製造方法及び半導体結晶薄膜の製造装置
JPH0883765A (ja) * 1994-07-14 1996-03-26 Sanyo Electric Co Ltd 多結晶半導体膜の製造方法
TW457553B (en) * 1999-01-08 2001-10-01 Sony Corp Process for producing thin film semiconductor device and laser irradiation apparatus
CN1397089A (zh) * 2000-02-15 2003-02-12 松下电器产业株式会社 非单晶薄膜、带非单晶薄膜的衬底、其制造方法及其制造装置、以及其检查方法及其检查装置、以及利用该非单晶薄膜的薄膜晶体管、薄膜晶体管阵列及图像显示装置
JP2002064060A (ja) * 2000-08-22 2002-02-28 Matsushita Electric Ind Co Ltd 非結晶薄膜のレーザーアニール方法とその装置
US6737672B2 (en) * 2000-08-25 2004-05-18 Fujitsu Limited Semiconductor device, manufacturing method thereof, and semiconductor manufacturing apparatus
JP2002158173A (ja) 2000-09-05 2002-05-31 Sony Corp 薄膜の製造方法、半導体薄膜、半導体装置、半導体薄膜の製造方法、及び半導体薄膜製造装置
US20020072252A1 (en) 2000-09-05 2002-06-13 Hideharu Nakajima Process for production of thin film semiconductor thin film, semiconductor device, process for production of semiconductor thin film, and apparatus for production of semiconductor thin film

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