JP5085902B2 - 表示装置の製造方法 - Google Patents

表示装置の製造方法 Download PDF

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Publication number
JP5085902B2
JP5085902B2 JP2006227265A JP2006227265A JP5085902B2 JP 5085902 B2 JP5085902 B2 JP 5085902B2 JP 2006227265 A JP2006227265 A JP 2006227265A JP 2006227265 A JP2006227265 A JP 2006227265A JP 5085902 B2 JP5085902 B2 JP 5085902B2
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Japan
Prior art keywords
continuous wave
wave laser
region
manufacturing
substrate
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Expired - Fee Related
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JP2006227265A
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English (en)
Japanese (ja)
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JP2008053394A5 (https=
JP2008053394A (ja
Inventor
秀明 新本
幹雄 本郷
秋夫 矢▲崎▼
剛史 野田
拓生 海東
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Liquid Crystal Display Co Ltd
Original Assignee
Panasonic Liquid Crystal Display Co Ltd
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Publication date
Application filed by Panasonic Liquid Crystal Display Co Ltd filed Critical Panasonic Liquid Crystal Display Co Ltd
Priority to JP2006227265A priority Critical patent/JP5085902B2/ja
Priority to US11/882,828 priority patent/US7732268B2/en
Publication of JP2008053394A publication Critical patent/JP2008053394A/ja
Publication of JP2008053394A5 publication Critical patent/JP2008053394A5/ja
Application granted granted Critical
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
    • H10D86/0229—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials characterised by control of the annealing or irradiation parameters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H10P14/3814—Continuous wave laser beam
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/382—Scanning of a beam

Landscapes

  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
JP2006227265A 2006-08-24 2006-08-24 表示装置の製造方法 Expired - Fee Related JP5085902B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2006227265A JP5085902B2 (ja) 2006-08-24 2006-08-24 表示装置の製造方法
US11/882,828 US7732268B2 (en) 2006-08-24 2007-08-06 Manufacturing method of display device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006227265A JP5085902B2 (ja) 2006-08-24 2006-08-24 表示装置の製造方法

Publications (3)

Publication Number Publication Date
JP2008053394A JP2008053394A (ja) 2008-03-06
JP2008053394A5 JP2008053394A5 (https=) 2009-07-09
JP5085902B2 true JP5085902B2 (ja) 2012-11-28

Family

ID=39197202

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006227265A Expired - Fee Related JP5085902B2 (ja) 2006-08-24 2006-08-24 表示装置の製造方法

Country Status (2)

Country Link
US (1) US7732268B2 (https=)
JP (1) JP5085902B2 (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5068972B2 (ja) * 2006-09-12 2012-11-07 富士フイルム株式会社 レーザアニール装置、半導体膜基板、素子基板、及び電気光学装置
WO2010032519A1 (ja) 2008-09-18 2010-03-25 シャープ株式会社 母基板及びその製造方法、並びにデバイス基板
JP2010108957A (ja) * 2008-10-28 2010-05-13 Hitachi Displays Ltd 表示装置およびその製造方法
WO2013051221A1 (ja) * 2011-10-03 2013-04-11 パナソニック株式会社 薄膜素子、薄膜素子アレイ及び薄膜素子の製造方法
KR102014167B1 (ko) * 2012-12-06 2019-10-22 삼성디스플레이 주식회사 다결정 실리콘층의 제조 방법, 상기 다결정 실리콘층의 제조 방법을 포함하는 유기 발광 표시 장치의 제조 방법, 및 그 제조 방법에 의해 제조된 유기 발광 표시 장치
NL2013715B1 (en) * 2014-10-30 2016-10-04 Univ Delft Tech Low-temperature formation of thin-film structures.
WO2016068713A1 (en) * 2014-10-30 2016-05-06 Technische Universiteit Delft Low-temperature formation of thin-film structures
JP7203417B2 (ja) * 2019-01-31 2023-01-13 株式会社ブイ・テクノロジー レーザアニール方法、レーザアニール装置、およびｔｆｔ基板
JP7632873B2 (ja) * 2021-02-26 2025-02-19 株式会社ブイ・テクノロジー レーザアニール装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62160781A (ja) * 1986-01-09 1987-07-16 Agency Of Ind Science & Technol レ−ザ光照射装置
JP3026520B2 (ja) * 1991-08-23 2000-03-27 東京エレクトロン株式会社 液晶表示装置の製造装置
JPH0661172A (ja) * 1992-08-07 1994-03-04 Fuji Xerox Co Ltd エキシマレ−ザアニ−ル装置
MY109592A (en) 1992-11-16 1997-03-31 Tokyo Electron Ltd Method and apparatus for manufacturing a liquid crystal display substrate, and apparatus and method for evaluating semiconductor crystals.
JP3196132B2 (ja) * 1992-11-16 2001-08-06 東京エレクトロン株式会社 液晶ディスプレイ基板の製造方法、半導体結晶の評価方法、半導体結晶薄膜の製造方法及び半導体結晶薄膜の製造装置
JPH0883765A (ja) * 1994-07-14 1996-03-26 Sanyo Electric Co Ltd 多結晶半導体膜の製造方法
TW457553B (en) * 1999-01-08 2001-10-01 Sony Corp Process for producing thin film semiconductor device and laser irradiation apparatus
CN1397089A (zh) * 2000-02-15 2003-02-12 松下电器产业株式会社 非单晶薄膜、带非单晶薄膜的衬底、其制造方法及其制造装置、以及其检查方法及其检查装置、以及利用该非单晶薄膜的薄膜晶体管、薄膜晶体管阵列及图像显示装置
JP2002064060A (ja) * 2000-08-22 2002-02-28 Matsushita Electric Ind Co Ltd 非結晶薄膜のレーザーアニール方法とその装置
US6737672B2 (en) * 2000-08-25 2004-05-18 Fujitsu Limited Semiconductor device, manufacturing method thereof, and semiconductor manufacturing apparatus
JP2002158173A (ja) 2000-09-05 2002-05-31 Sony Corp 薄膜の製造方法、半導体薄膜、半導体装置、半導体薄膜の製造方法、及び半導体薄膜製造装置
US20020072252A1 (en) 2000-09-05 2002-06-13 Hideharu Nakajima Process for production of thin film semiconductor thin film, semiconductor device, process for production of semiconductor thin film, and apparatus for production of semiconductor thin film

Also Published As

Publication number Publication date
JP2008053394A (ja) 2008-03-06
US7732268B2 (en) 2010-06-08
US20080050893A1 (en) 2008-02-28

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