JP2002269972A5 - - Google Patents

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Publication number
JP2002269972A5
JP2002269972A5 JP2001393649A JP2001393649A JP2002269972A5 JP 2002269972 A5 JP2002269972 A5 JP 2002269972A5 JP 2001393649 A JP2001393649 A JP 2001393649A JP 2001393649 A JP2001393649 A JP 2001393649A JP 2002269972 A5 JP2002269972 A5 JP 2002269972A5
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JP
Japan
Prior art keywords
memory cell
signal electrode
voltage
ferroelectric
selected memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2001393649A
Other languages
English (en)
Japanese (ja)
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JP2002269972A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2001393649A priority Critical patent/JP2002269972A/ja
Priority claimed from JP2001393649A external-priority patent/JP2002269972A/ja
Priority to US10/026,903 priority patent/US6717837B2/en
Priority to CN01808429.XA priority patent/CN1426584A/zh
Priority to PCT/JP2001/011547 priority patent/WO2002052571A1/ja
Publication of JP2002269972A publication Critical patent/JP2002269972A/ja
Publication of JP2002269972A5 publication Critical patent/JP2002269972A5/ja
Withdrawn legal-status Critical Current

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JP2001393649A 2000-12-27 2001-12-26 強誘電体メモリ装置および強誘電体キャパシタからなるメモリセルに対する動作方法 Withdrawn JP2002269972A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2001393649A JP2002269972A (ja) 2000-12-27 2001-12-26 強誘電体メモリ装置および強誘電体キャパシタからなるメモリセルに対する動作方法
US10/026,903 US6717837B2 (en) 2000-12-27 2001-12-27 Ferroelectric memory device and method of operating memory cell including ferroelectric capacitor
CN01808429.XA CN1426584A (zh) 2000-12-27 2001-12-27 强电介质存储装置及对由强电介质电容器构成的存储单元的操作方法
PCT/JP2001/011547 WO2002052571A1 (fr) 2000-12-27 2001-12-27 Dispositif memoire ferroelectrique et procede permettant de faire fonctionner une cellule de memoire comprenant un condensateur ferroelectrique

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2000397122 2000-12-27
JP2000-397122 2000-12-27
JP2001393649A JP2002269972A (ja) 2000-12-27 2001-12-26 強誘電体メモリ装置および強誘電体キャパシタからなるメモリセルに対する動作方法

Publications (2)

Publication Number Publication Date
JP2002269972A JP2002269972A (ja) 2002-09-20
JP2002269972A5 true JP2002269972A5 (enExample) 2005-02-24

Family

ID=26606797

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001393649A Withdrawn JP2002269972A (ja) 2000-12-27 2001-12-26 強誘電体メモリ装置および強誘電体キャパシタからなるメモリセルに対する動作方法

Country Status (4)

Country Link
US (1) US6717837B2 (enExample)
JP (1) JP2002269972A (enExample)
CN (1) CN1426584A (enExample)
WO (1) WO2002052571A1 (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004017410A1 (ja) * 2002-08-19 2004-02-26 Seiko Epson Corporation 強誘電体メモリおよびその製造方法
JP4024196B2 (ja) * 2003-09-30 2007-12-19 三洋電機株式会社 強誘電体メモリ
US7133304B2 (en) * 2004-03-22 2006-11-07 Texas Instruments Incorporated Method and apparatus to reduce storage node disturbance in ferroelectric memory
KR100535047B1 (ko) * 2004-04-20 2005-12-07 주식회사 하이닉스반도체 불휘발성 강유전체 메모리 장치
JP2007149295A (ja) * 2005-11-30 2007-06-14 Seiko Epson Corp 半導体記憶装置
JP2010079941A (ja) * 2008-09-24 2010-04-08 National Institute Of Advanced Industrial Science & Technology 半導体不揮発記憶装置
US8987787B2 (en) * 2012-04-10 2015-03-24 Macronix International Co., Ltd. Semiconductor structure and method for manufacturing the same
US9799388B1 (en) 2016-04-28 2017-10-24 Micron Technology, Inc. Charge sharing between memory cell plates using a conductive path
US9697913B1 (en) 2016-06-10 2017-07-04 Micron Technology, Inc. Ferroelectric memory cell recovery
US9941021B2 (en) * 2016-06-16 2018-04-10 Micron Technology, Inc. Plate defect mitigation techniques
US10403389B2 (en) 2016-06-16 2019-09-03 Micron Technology, Inc. Array plate short repair
US10163480B1 (en) * 2017-07-27 2018-12-25 Micron Technology, Inc. Periphery fill and localized capacitance
US10032496B1 (en) 2017-07-27 2018-07-24 Micron Technology, Inc. Variable filter capacitance
US11158358B2 (en) 2019-07-22 2021-10-26 Micron Technology, Inc. Adaptive write operations for a memory device
FR3109243B1 (fr) 2020-04-10 2022-04-08 Commissariat Energie Atomique Procédé de caractérisation de transistors pour l’atténuation d’effets d’irradiations sur un circuit intégré fabriqué en technologie SOI.

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0677434A (ja) 1992-08-27 1994-03-18 Hitachi Ltd 半導体記憶装置
JPH08147982A (ja) 1994-09-20 1996-06-07 Olympus Optical Co Ltd 強誘電体メモリ装置
US5666305A (en) 1993-03-29 1997-09-09 Olympus Optical Co., Ltd. Method of driving ferroelectric gate transistor memory cell
US5572459A (en) * 1994-09-16 1996-11-05 Ramtron International Corporation Voltage reference for a ferroelectric 1T/1C based memory
US5532953A (en) * 1995-03-29 1996-07-02 Ramtron International Corporation Ferroelectric memory sensing method using distinct read and write voltages
JP3327071B2 (ja) 1995-10-16 2002-09-24 ソニー株式会社 強誘電体記憶装置
JP3629099B2 (ja) * 1996-06-28 2005-03-16 株式会社東芝 半導体記憶装置
JP2002353419A (ja) 2000-12-27 2002-12-06 Seiko Epson Corp 強誘電体メモリ装置

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