CN1426584A - 强电介质存储装置及对由强电介质电容器构成的存储单元的操作方法 - Google Patents

强电介质存储装置及对由强电介质电容器构成的存储单元的操作方法 Download PDF

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Publication number
CN1426584A
CN1426584A CN01808429.XA CN01808429A CN1426584A CN 1426584 A CN1426584 A CN 1426584A CN 01808429 A CN01808429 A CN 01808429A CN 1426584 A CN1426584 A CN 1426584A
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CN
China
Prior art keywords
storage unit
signal electrode
voltage
absolute value
secondary signal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN01808429.XA
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English (en)
Chinese (zh)
Inventor
长谷川和正
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
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Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Publication of CN1426584A publication Critical patent/CN1426584A/zh
Pending legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
CN01808429.XA 2000-12-27 2001-12-27 强电介质存储装置及对由强电介质电容器构成的存储单元的操作方法 Pending CN1426584A (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2000397122 2000-12-27
JP397122/2000 2000-12-27
JP2001393649A JP2002269972A (ja) 2000-12-27 2001-12-26 強誘電体メモリ装置および強誘電体キャパシタからなるメモリセルに対する動作方法
JP393649/2001 2001-12-26

Publications (1)

Publication Number Publication Date
CN1426584A true CN1426584A (zh) 2003-06-25

Family

ID=26606797

Family Applications (1)

Application Number Title Priority Date Filing Date
CN01808429.XA Pending CN1426584A (zh) 2000-12-27 2001-12-27 强电介质存储装置及对由强电介质电容器构成的存储单元的操作方法

Country Status (4)

Country Link
US (1) US6717837B2 (enExample)
JP (1) JP2002269972A (enExample)
CN (1) CN1426584A (enExample)
WO (1) WO2002052571A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3109243A1 (fr) 2020-04-10 2021-10-15 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procédé de caractérisation de transistors pour l’atténuation d’effets d’irradiations sur un circuit intégré fabriqué en technologie SOI.

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004017410A1 (ja) * 2002-08-19 2004-02-26 Seiko Epson Corporation 強誘電体メモリおよびその製造方法
JP4024196B2 (ja) * 2003-09-30 2007-12-19 三洋電機株式会社 強誘電体メモリ
US7133304B2 (en) * 2004-03-22 2006-11-07 Texas Instruments Incorporated Method and apparatus to reduce storage node disturbance in ferroelectric memory
KR100535047B1 (ko) * 2004-04-20 2005-12-07 주식회사 하이닉스반도체 불휘발성 강유전체 메모리 장치
JP2007149295A (ja) * 2005-11-30 2007-06-14 Seiko Epson Corp 半導体記憶装置
JP2010079941A (ja) * 2008-09-24 2010-04-08 National Institute Of Advanced Industrial Science & Technology 半導体不揮発記憶装置
US8987787B2 (en) * 2012-04-10 2015-03-24 Macronix International Co., Ltd. Semiconductor structure and method for manufacturing the same
US9799388B1 (en) 2016-04-28 2017-10-24 Micron Technology, Inc. Charge sharing between memory cell plates using a conductive path
US9697913B1 (en) 2016-06-10 2017-07-04 Micron Technology, Inc. Ferroelectric memory cell recovery
US9941021B2 (en) * 2016-06-16 2018-04-10 Micron Technology, Inc. Plate defect mitigation techniques
US10403389B2 (en) 2016-06-16 2019-09-03 Micron Technology, Inc. Array plate short repair
US10163480B1 (en) * 2017-07-27 2018-12-25 Micron Technology, Inc. Periphery fill and localized capacitance
US10032496B1 (en) 2017-07-27 2018-07-24 Micron Technology, Inc. Variable filter capacitance
US11158358B2 (en) 2019-07-22 2021-10-26 Micron Technology, Inc. Adaptive write operations for a memory device

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0677434A (ja) 1992-08-27 1994-03-18 Hitachi Ltd 半導体記憶装置
JPH08147982A (ja) 1994-09-20 1996-06-07 Olympus Optical Co Ltd 強誘電体メモリ装置
US5666305A (en) 1993-03-29 1997-09-09 Olympus Optical Co., Ltd. Method of driving ferroelectric gate transistor memory cell
US5572459A (en) * 1994-09-16 1996-11-05 Ramtron International Corporation Voltage reference for a ferroelectric 1T/1C based memory
US5532953A (en) * 1995-03-29 1996-07-02 Ramtron International Corporation Ferroelectric memory sensing method using distinct read and write voltages
JP3327071B2 (ja) 1995-10-16 2002-09-24 ソニー株式会社 強誘電体記憶装置
JP3629099B2 (ja) * 1996-06-28 2005-03-16 株式会社東芝 半導体記憶装置
JP2002353419A (ja) 2000-12-27 2002-12-06 Seiko Epson Corp 強誘電体メモリ装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3109243A1 (fr) 2020-04-10 2021-10-15 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procédé de caractérisation de transistors pour l’atténuation d’effets d’irradiations sur un circuit intégré fabriqué en technologie SOI.

Also Published As

Publication number Publication date
US20020159307A1 (en) 2002-10-31
US6717837B2 (en) 2004-04-06
JP2002269972A (ja) 2002-09-20
WO2002052571A1 (fr) 2002-07-04

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