JP2002231992A - 半導体受光素子 - Google Patents

半導体受光素子

Info

Publication number
JP2002231992A
JP2002231992A JP2001027197A JP2001027197A JP2002231992A JP 2002231992 A JP2002231992 A JP 2002231992A JP 2001027197 A JP2001027197 A JP 2001027197A JP 2001027197 A JP2001027197 A JP 2001027197A JP 2002231992 A JP2002231992 A JP 2002231992A
Authority
JP
Japan
Prior art keywords
layer
light receiving
junction
absorbing layer
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001027197A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002231992A5 (enExample
Inventor
Reiji Ono
野 玲 司 小
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Toshiba Development and Engineering Corp
Original Assignee
Toshiba Corp
Toshiba Electronic Engineering Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Toshiba Electronic Engineering Co Ltd filed Critical Toshiba Corp
Priority to JP2001027197A priority Critical patent/JP2002231992A/ja
Priority to US10/062,743 priority patent/US6831308B2/en
Priority to EP02001975A priority patent/EP1229594A3/en
Publication of JP2002231992A publication Critical patent/JP2002231992A/ja
Publication of JP2002231992A5 publication Critical patent/JP2002231992A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
    • H10F30/2215—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction the devices comprising active layers made of only Group III-V materials

Landscapes

  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP2001027197A 2001-02-02 2001-02-02 半導体受光素子 Pending JP2002231992A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2001027197A JP2002231992A (ja) 2001-02-02 2001-02-02 半導体受光素子
US10/062,743 US6831308B2 (en) 2001-02-02 2002-02-01 Semiconductor light detecting device
EP02001975A EP1229594A3 (en) 2001-02-02 2002-02-04 Semiconductor light detecting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001027197A JP2002231992A (ja) 2001-02-02 2001-02-02 半導体受光素子

Publications (2)

Publication Number Publication Date
JP2002231992A true JP2002231992A (ja) 2002-08-16
JP2002231992A5 JP2002231992A5 (enExample) 2008-03-21

Family

ID=18891897

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001027197A Pending JP2002231992A (ja) 2001-02-02 2001-02-02 半導体受光素子

Country Status (3)

Country Link
US (1) US6831308B2 (enExample)
EP (1) EP1229594A3 (enExample)
JP (1) JP2002231992A (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005055327A1 (ja) * 2003-12-04 2005-06-16 Hamamatsu Photonics K.K. 半導体受光素子及びその製造方法
US6911673B2 (en) 2002-03-01 2005-06-28 Sharp Kabushiki Kaisha Light emitting diode device
JP2015084361A (ja) * 2013-10-25 2015-04-30 住友電気工業株式会社 半導体素子
JP2020064933A (ja) * 2018-10-16 2020-04-23 浜松ホトニクス株式会社 光検出素子及び光検出装置
JP2020064846A (ja) * 2018-10-12 2020-04-23 日本碍子株式会社 燃料電池装置

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5015494B2 (ja) * 2006-05-22 2012-08-29 住友電工デバイス・イノベーション株式会社 半導体受光素子
JP6488855B2 (ja) * 2015-04-22 2019-03-27 住友電気工業株式会社 半導体積層体、受光素子および半導体積層体の製造方法
WO2016171009A1 (ja) * 2015-04-22 2016-10-27 住友電気工業株式会社 半導体積層体、受光素子および半導体積層体の製造方法
TWI835924B (zh) * 2019-11-18 2024-03-21 晶元光電股份有限公司 光偵測元件
US11335826B2 (en) * 2020-06-30 2022-05-17 Epistar Corporation Semiconductor photo-detecting device
US11481236B1 (en) * 2021-05-14 2022-10-25 Slack Technologies, Llc Collaboration hub for a group-based communication system

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0205899B1 (en) * 1985-05-20 1991-03-27 Nec Corporation Planar heterojunction avalanche photodiode
JP2793085B2 (ja) * 1992-06-25 1998-09-03 三洋電機株式会社 光半導体装置とその製造方法
JPH0653538A (ja) * 1992-07-28 1994-02-25 Toshiba Corp 半導体受光素子
US5576559A (en) * 1994-11-01 1996-11-19 Intevac, Inc. Heterojunction electron transfer device
JPH0945954A (ja) * 1995-07-31 1997-02-14 Mitsubishi Electric Corp 半導体素子，及び半導体素子の製造方法
US5777352A (en) * 1996-09-19 1998-07-07 Eastman Kodak Company Photodetector structure
JP4131031B2 (ja) * 1998-03-17 2008-08-13 ソニー株式会社 受光素子を有する半導体装置、光学ピックアップ装置、および受光素子を有する半導体装置の製造方法
JP3221402B2 (ja) * 1998-06-22 2001-10-22 住友電気工業株式会社 受光素子と受光装置

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6911673B2 (en) 2002-03-01 2005-06-28 Sharp Kabushiki Kaisha Light emitting diode device
WO2005055327A1 (ja) * 2003-12-04 2005-06-16 Hamamatsu Photonics K.K. 半導体受光素子及びその製造方法
US7834413B2 (en) 2003-12-04 2010-11-16 Hamamatsu Photonics K.K. Semiconductor photodetector and method of manufacturing the same
JP2015084361A (ja) * 2013-10-25 2015-04-30 住友電気工業株式会社 半導体素子
US9123843B2 (en) 2013-10-25 2015-09-01 Sumitomo Electric Industries, Ltd. Semiconductor device
JP2020064846A (ja) * 2018-10-12 2020-04-23 日本碍子株式会社 燃料電池装置
JP2020064933A (ja) * 2018-10-16 2020-04-23 浜松ホトニクス株式会社 光検出素子及び光検出装置
WO2020079897A1 (ja) * 2018-10-16 2020-04-23 浜松ホトニクス株式会社 光検出素子及び光検出装置
US11450705B2 (en) 2018-10-16 2022-09-20 Hamamatsu Photonics K.K. Light detection element and light detection device

Also Published As

Publication number Publication date
US6831308B2 (en) 2004-12-14
US20020105010A1 (en) 2002-08-08
EP1229594A2 (en) 2002-08-07
EP1229594A3 (en) 2007-05-09

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