JP2002231958A5 - - Google Patents
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- Publication number
- JP2002231958A5 JP2002231958A5 JP2001025531A JP2001025531A JP2002231958A5 JP 2002231958 A5 JP2002231958 A5 JP 2002231958A5 JP 2001025531 A JP2001025531 A JP 2001025531A JP 2001025531 A JP2001025531 A JP 2001025531A JP 2002231958 A5 JP2002231958 A5 JP 2002231958A5
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- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001025531A JP4358998B2 (ja) | 2001-02-01 | 2001-02-01 | 薄膜トランジスタ装置およびその製造方法 |
| TW090103950A TW478171B (en) | 2001-02-01 | 2001-02-21 | Thin film semiconductor device and method for producing thereof |
| US09/790,545 US6521909B2 (en) | 2001-02-01 | 2001-02-23 | Thin film semiconductor device containing polycrystalline Si-Ge alloy and method for producing thereof |
| KR1020010009646A KR100761619B1 (ko) | 2001-02-01 | 2001-02-26 | 박막 반도체 장치 및 그 제조 방법 |
| US10/277,140 US6716726B2 (en) | 2001-02-01 | 2002-10-22 | Thin film semiconductor device containing polycrystalline Si—Ge alloy and method for producing thereof |
| US10/274,995 US6690064B2 (en) | 2001-02-01 | 2002-10-22 | Thin-film semiconductor device containing poly-crystalline Si-Ge alloy and method for producing thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001025531A JP4358998B2 (ja) | 2001-02-01 | 2001-02-01 | 薄膜トランジスタ装置およびその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2002231958A JP2002231958A (ja) | 2002-08-16 |
| JP2002231958A5 true JP2002231958A5 (ja) | 2006-03-30 |
| JP4358998B2 JP4358998B2 (ja) | 2009-11-04 |
Family
ID=18890502
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001025531A Expired - Fee Related JP4358998B2 (ja) | 2001-02-01 | 2001-02-01 | 薄膜トランジスタ装置およびその製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (3) | US6521909B2 (ja) |
| JP (1) | JP4358998B2 (ja) |
| KR (1) | KR100761619B1 (ja) |
| TW (1) | TW478171B (ja) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3980159B2 (ja) * | 1998-03-05 | 2007-09-26 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP3737914B2 (ja) * | 1999-09-02 | 2006-01-25 | 松下電器産業株式会社 | 半導体装置及びその製造方法 |
| US6882012B2 (en) * | 2000-02-28 | 2005-04-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and a method of manufacturing the same |
| JP3559962B2 (ja) * | 2000-09-04 | 2004-09-02 | 日本航空電子工業株式会社 | 熱電変換材料及びその製造方法 |
| US6746942B2 (en) * | 2000-09-05 | 2004-06-08 | Sony Corporation | Semiconductor thin film and method of fabricating semiconductor thin film, apparatus for fabricating single crystal semiconductor thin film, and method of fabricating single crystal thin film, single crystal thin film substrate, and semiconductor device |
| JP2003332350A (ja) | 2002-05-17 | 2003-11-21 | Hitachi Ltd | 薄膜半導体装置 |
| JP3904512B2 (ja) * | 2002-12-24 | 2007-04-11 | シャープ株式会社 | 半導体装置およびその製造方法、並びに半導体装置を備えた電子機器 |
| JP2004207616A (ja) * | 2002-12-26 | 2004-07-22 | Hitachi Displays Ltd | 表示装置 |
| KR100975523B1 (ko) * | 2003-12-30 | 2010-08-13 | 삼성전자주식회사 | 조절된 이동도를 가지는 반도체 소자 및 이를 적용한 ｔｆｔ |
| JP4567984B2 (ja) | 2004-01-30 | 2010-10-27 | 株式会社 日立ディスプレイズ | 平面表示装置の製造装置 |
| KR100623689B1 (ko) * | 2004-06-23 | 2006-09-19 | 삼성에스디아이 주식회사 | 박막트랜지스터 및 그의 제조 방법 |
| JP5152827B2 (ja) | 2007-03-22 | 2013-02-27 | 株式会社日立製作所 | 薄膜トランジスタ及びそれを用いた有機ｅｌ表示装置 |
| JP5648252B2 (ja) * | 2010-08-27 | 2015-01-07 | 学校法人東北学院 | 半導体装置 |
| KR101983157B1 (ko) * | 2013-11-19 | 2019-05-28 | 삼성전기주식회사 | 인쇄회로기판 및 그 제조방법 |
| US9598580B2 (en) | 2014-03-12 | 2017-03-21 | Hexion Inc. | Polymers, composites, and methods for making polymers and composites |
| CA3031736A1 (en) | 2015-07-29 | 2017-02-02 | Circuit Seed, Llc | Complementary current field-effect transistor devices and amplifiers |
| US10491177B2 (en) | 2015-07-30 | 2019-11-26 | Circuit Seed, Llc | Multi-stage and feed forward compensated complementary current field effect transistor amplifiers |
| CN108140614A (zh) | 2015-07-30 | 2018-06-08 | 电路种子有限责任公司 | 基于互补电流场效应晶体管装置的参考产生器和电流源晶体管 |
| CN108141180A (zh) | 2015-07-30 | 2018-06-08 | 电路种子有限责任公司 | 基于互补电流场效应晶体管装置的低噪声跨阻抗放大器 |
| WO2017105554A1 (en) | 2015-12-14 | 2017-06-22 | Circuit Seed, Llc | Super-saturation current field effect transistor and trans-impedance mos device |
| CN107359203A (zh) | 2017-05-12 | 2017-11-17 | 惠科股份有限公司 | 显示面板和显示装置 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR940010378A (ko) * | 1992-10-19 | 1994-05-26 | 김광호 | 다결정 실리콘 박막의 제조방법 |
| JP2791858B2 (ja) | 1993-06-25 | 1998-08-27 | 株式会社半導体エネルギー研究所 | 半導体装置作製方法 |
| JPH0823160A (ja) * | 1994-05-06 | 1996-01-23 | Seiko Epson Corp | プリント配線板と電子部品の接続方法 |
| JPH07321323A (ja) * | 1994-05-24 | 1995-12-08 | Matsushita Electric Ind Co Ltd | 薄膜トランジスタおよびその製造方法 |
| JP3294439B2 (ja) | 1994-08-17 | 2002-06-24 | 沖電気工業株式会社 | 多結晶シリコン薄膜の形成方法 |
| JP4026191B2 (ja) | 1996-05-22 | 2007-12-26 | ソニー株式会社 | シリコン単結晶粒子群の形成方法及びフラッシュメモリセルの製造方法 |
| JP3642546B2 (ja) * | 1997-08-12 | 2005-04-27 | 株式会社東芝 | 多結晶半導体薄膜の製造方法 |
| TW454260B (en) * | 1998-06-30 | 2001-09-11 | Matsushita Electric Ind Co Ltd | Thin film transistor and manufacturing method thereof |
| JP2000174282A (ja) * | 1998-12-03 | 2000-06-23 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
| JP2000243854A (ja) * | 1999-02-22 | 2000-09-08 | Toshiba Corp | 半導体装置及びその製造方法 |
| US6426245B1 (en) * | 1999-07-09 | 2002-07-30 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a semiconductor device |
-
2001
- 2001-02-01 JP JP2001025531A patent/JP4358998B2/ja not_active Expired - Fee Related
- 2001-02-21 TW TW090103950A patent/TW478171B/zh not_active IP Right Cessation
- 2001-02-23 US US09/790,545 patent/US6521909B2/en not_active Expired - Lifetime
- 2001-02-26 KR KR1020010009646A patent/KR100761619B1/ko not_active IP Right Cessation
-
2002
- 2002-10-22 US US10/274,995 patent/US6690064B2/en not_active Expired - Lifetime
- 2002-10-22 US US10/277,140 patent/US6716726B2/en not_active Expired - Lifetime