JP2002231721A5 - - Google Patents

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Publication number
JP2002231721A5
JP2002231721A5 JP2001029807A JP2001029807A JP2002231721A5 JP 2002231721 A5 JP2002231721 A5 JP 2002231721A5 JP 2001029807 A JP2001029807 A JP 2001029807A JP 2001029807 A JP2001029807 A JP 2001029807A JP 2002231721 A5 JP2002231721 A5 JP 2002231721A5
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001029807A
Other versions
JP2002231721A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2001029807A priority Critical patent/JP2002231721A/ja
Priority claimed from JP2001029807A external-priority patent/JP2002231721A/ja
Priority to US09/964,462 priority patent/US6888243B2/en
Priority to TW090128916A priority patent/TW523932B/zh
Priority to KR10-2001-0074141A priority patent/KR100443855B1/ko
Publication of JP2002231721A publication Critical patent/JP2002231721A/ja
Priority to US10/684,437 priority patent/US7009277B2/en
Publication of JP2002231721A5 publication Critical patent/JP2002231721A5/ja
Pending legal-status Critical Current

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JP2001029807A 2001-02-06 2001-02-06 半導体装置 Pending JP2002231721A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2001029807A JP2002231721A (ja) 2001-02-06 2001-02-06 半導体装置
US09/964,462 US6888243B2 (en) 2001-02-06 2001-09-28 Semiconductor device
TW090128916A TW523932B (en) 2001-02-06 2001-11-22 Semiconductor device
KR10-2001-0074141A KR100443855B1 (ko) 2001-02-06 2001-11-27 반도체 장치
US10/684,437 US7009277B2 (en) 2001-02-06 2003-10-15 Semiconductor device with improved radiation property

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001029807A JP2002231721A (ja) 2001-02-06 2001-02-06 半導体装置

Publications (2)

Publication Number Publication Date
JP2002231721A JP2002231721A (ja) 2002-08-16
JP2002231721A5 true JP2002231721A5 (ja) 2008-03-21

Family

ID=18894112

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001029807A Pending JP2002231721A (ja) 2001-02-06 2001-02-06 半導体装置

Country Status (4)

Country Link
US (2) US6888243B2 (ja)
JP (1) JP2002231721A (ja)
KR (1) KR100443855B1 (ja)
TW (1) TW523932B (ja)

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JP4869546B2 (ja) * 2003-05-23 2012-02-08 ルネサスエレクトロニクス株式会社 半導体装置
WO2005001930A1 (en) * 2003-06-27 2005-01-06 Koninklijke Philips Electronics N.V. Integrated circuit with an integrated heat sink
US20050057897A1 (en) * 2003-09-16 2005-03-17 Shiu Hsiung Ming Heat dissipating device with heat conductive posts
KR100675275B1 (ko) 2004-12-16 2007-01-26 삼성전자주식회사 반도체 장치 및 이 장치의 패드 배치방법
JP4591821B2 (ja) * 2005-02-09 2010-12-01 エルピーダメモリ株式会社 半導体装置
JP2007134615A (ja) * 2005-11-14 2007-05-31 Nec Electronics Corp 半導体装置
DE102006000724A1 (de) * 2006-01-03 2007-07-12 Infineon Technologies Ag Halbleiterbauteil mit Durchgangskontakten und mit Kühlkörper sowie Verfahren zur Herstellung des Halbleiterbauteils
JP4533873B2 (ja) * 2006-08-23 2010-09-01 株式会社東芝 半導体装置およびその製造方法
KR100829789B1 (ko) * 2006-11-29 2008-05-16 삼성전자주식회사 반도체 장치 및 이의 제조 방법
FR2919213B1 (fr) * 2007-07-23 2009-08-28 Commissariat Energie Atomique Procede de soudure de deux elements entre eux au moyen d'un materiau de brasure
WO2010134267A1 (ja) * 2009-05-19 2010-11-25 パナソニック株式会社 半導体装置
JP5335914B2 (ja) * 2009-06-29 2013-11-06 富士通株式会社 半導体装置およびその製造方法
WO2011037003A1 (ja) * 2009-09-24 2011-03-31 国立大学法人東北大学 電界効果型トランジスタおよび集積回路
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JP5735099B2 (ja) * 2011-04-01 2015-06-17 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法ならびに携帯電話機
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US20160141226A1 (en) * 2014-11-14 2016-05-19 International Business Machines Corporation Device connection through a buried oxide layer in a silicon on insulator wafer
CN107039372B (zh) * 2016-02-04 2019-05-28 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法
DE102016104256B3 (de) * 2016-03-09 2017-07-06 Infineon Technologies Ag Transistorzellen und Kompensationsstruktur aufweisende Halbleitervorrichtung mit breitem Bandabstand
TWI619212B (zh) 2016-03-17 2018-03-21 瑞昱半導體股份有限公司 用於半導體裝置之接合線式散熱結構

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