JP2002231608A5 - - Google Patents
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- Publication number
- JP2002231608A5 JP2002231608A5 JP2001026256A JP2001026256A JP2002231608A5 JP 2002231608 A5 JP2002231608 A5 JP 2002231608A5 JP 2001026256 A JP2001026256 A JP 2001026256A JP 2001026256 A JP2001026256 A JP 2001026256A JP 2002231608 A5 JP2002231608 A5 JP 2002231608A5
- Authority
- JP
- Japan
- Prior art keywords
- resist pattern
- workpiece
- ozone
- manufacturing
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005530 etching Methods 0.000 claims 10
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims 9
- 238000004519 manufacturing process Methods 0.000 claims 8
- 239000004065 semiconductor Substances 0.000 claims 8
- 238000000034 method Methods 0.000 claims 4
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims 2
- 239000007789 gas Substances 0.000 claims 2
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 claims 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 229910002092 carbon dioxide Inorganic materials 0.000 claims 1
- 239000001569 carbon dioxide Substances 0.000 claims 1
- 229910002091 carbon monoxide Inorganic materials 0.000 claims 1
- 230000001678 irradiating effect Effects 0.000 claims 1
- 238000012544 monitoring process Methods 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001026256A JP2002231608A (ja) | 2001-02-02 | 2001-02-02 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001026256A JP2002231608A (ja) | 2001-02-02 | 2001-02-02 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2002231608A JP2002231608A (ja) | 2002-08-16 |
| JP2002231608A5 true JP2002231608A5 (enExample) | 2005-07-21 |
Family
ID=18891099
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001026256A Pending JP2002231608A (ja) | 2001-02-02 | 2001-02-02 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2002231608A (enExample) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100463237B1 (ko) * | 2000-06-28 | 2004-12-23 | 주식회사 하이닉스반도체 | 감광막패턴의 형성 방법 |
| US6630288B2 (en) * | 2001-03-28 | 2003-10-07 | Advanced Micro Devices, Inc. | Process for forming sub-lithographic photoresist features by modification of the photoresist surface |
| JP4322482B2 (ja) * | 2002-08-26 | 2009-09-02 | シャープ株式会社 | 微細レジストパターンの形成方法、および半導体装置の製造方法 |
| JP4806516B2 (ja) | 2003-08-29 | 2011-11-02 | Ｏｋｉセミコンダクタ株式会社 | 半導体装置のプラズマエッチング方法 |
| JP2005191480A (ja) * | 2003-12-26 | 2005-07-14 | Fuji Photo Film Co Ltd | 固体撮像素子の製造方法 |
| JP2005303088A (ja) * | 2004-04-13 | 2005-10-27 | Oki Electric Ind Co Ltd | プラズマ処理装置及びレジストトリミング方法 |
| US7723235B2 (en) * | 2004-09-17 | 2010-05-25 | Renesas Technology Corp. | Method for smoothing a resist pattern prior to etching a layer using the resist pattern |
| KR100854217B1 (ko) * | 2004-09-17 | 2008-08-25 | 가부시끼가이샤 르네사스 테크놀로지 | 반도체 장치의 제조 방법 |
| US20090212012A1 (en) * | 2008-02-27 | 2009-08-27 | Molecular Imprints, Inc. | Critical dimension control during template formation |
-
2001
- 2001-02-02 JP JP2001026256A patent/JP2002231608A/ja active Pending
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