JP2002212786A - 基板処理装置 - Google Patents

基板処理装置

Info

Publication number
JP2002212786A
JP2002212786A JP2001009537A JP2001009537A JP2002212786A JP 2002212786 A JP2002212786 A JP 2002212786A JP 2001009537 A JP2001009537 A JP 2001009537A JP 2001009537 A JP2001009537 A JP 2001009537A JP 2002212786 A JP2002212786 A JP 2002212786A
Authority
JP
Japan
Prior art keywords
substrate
plating
unit
plating solution
cleaning
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001009537A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002212786A5 (enExample
Inventor
Masayuki Kumegawa
正行 粂川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ebara Corp
Original Assignee
Ebara Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ebara Corp filed Critical Ebara Corp
Priority to JP2001009537A priority Critical patent/JP2002212786A/ja
Priority to US10/203,832 priority patent/US7083706B2/en
Priority to TW091100540A priority patent/TWI260676B/zh
Priority to EP02715754A priority patent/EP1252650A1/en
Priority to CNB028000455A priority patent/CN1265425C/zh
Priority to PCT/JP2002/000235 priority patent/WO2002058114A1/en
Priority to KR1020027012199A priority patent/KR20030007468A/ko
Publication of JP2002212786A publication Critical patent/JP2002212786A/ja
Publication of JP2002212786A5 publication Critical patent/JP2002212786A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0452—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0414—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0452—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers
    • H10P72/0454—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers surrounding a central transfer chamber
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0452—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers
    • H10P72/0456—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers in-line arrangement
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0461—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the presence of two or more transfer chambers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0468—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H10P72/0476—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one plating chamber
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7602—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a robot blade or gripped by a gripper for conveyance

Landscapes

  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
JP2001009537A 2001-01-17 2001-01-17 基板処理装置 Pending JP2002212786A (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2001009537A JP2002212786A (ja) 2001-01-17 2001-01-17 基板処理装置
US10/203,832 US7083706B2 (en) 2001-01-17 2002-01-16 Substrate processing apparatus
TW091100540A TWI260676B (en) 2001-01-17 2002-01-16 Substrate processing apparatus
EP02715754A EP1252650A1 (en) 2001-01-17 2002-01-16 Substrate processing apparatus
CNB028000455A CN1265425C (zh) 2001-01-17 2002-01-16 基片处理装置
PCT/JP2002/000235 WO2002058114A1 (en) 2001-01-17 2002-01-16 Substrate processing apparatus
KR1020027012199A KR20030007468A (ko) 2001-01-17 2002-01-16 기판처리장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001009537A JP2002212786A (ja) 2001-01-17 2001-01-17 基板処理装置

Publications (2)

Publication Number Publication Date
JP2002212786A true JP2002212786A (ja) 2002-07-31
JP2002212786A5 JP2002212786A5 (enExample) 2005-06-23

Family

ID=18877008

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001009537A Pending JP2002212786A (ja) 2001-01-17 2001-01-17 基板処理装置

Country Status (7)

Country Link
US (1) US7083706B2 (enExample)
EP (1) EP1252650A1 (enExample)
JP (1) JP2002212786A (enExample)
KR (1) KR20030007468A (enExample)
CN (1) CN1265425C (enExample)
TW (1) TWI260676B (enExample)
WO (1) WO2002058114A1 (enExample)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007126756A (ja) * 2003-03-20 2007-05-24 Ebara Corp 無電解めっき装置及び無電解めっき方法
JP2007332435A (ja) * 2006-06-16 2007-12-27 Semicon Science:Kk 自動金属皮膜形成装置及びウェーハへの金属皮膜の形成方法
JP2008240037A (ja) * 2007-03-26 2008-10-09 Tokyo Seimitsu Co Ltd 電解加工ユニット装置及び電解加工洗浄乾燥方法
JP6999069B1 (ja) * 2021-03-17 2022-01-18 株式会社荏原製作所 めっき装置及びめっき装置のコンタクト部材洗浄方法
JP7114002B1 (ja) * 2021-11-04 2022-08-05 株式会社荏原製作所 めっき装置およびコンタクト洗浄方法
JPWO2023032191A1 (enExample) * 2021-09-06 2023-03-09

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6582578B1 (en) * 1999-04-08 2003-06-24 Applied Materials, Inc. Method and associated apparatus for tilting a substrate upon entry for metal deposition
EP1470268A2 (en) * 2000-10-03 2004-10-27 Applied Materials, Inc. Method and associated apparatus for tilting a substrate upon entry for metal deposition
JP2002220692A (ja) 2001-01-24 2002-08-09 Ebara Corp めっき装置及び方法
JP2003027280A (ja) * 2001-07-18 2003-01-29 Ebara Corp めっき装置
US6798513B2 (en) * 2002-04-11 2004-09-28 Nanophotonics Ab Measuring module
WO2004075266A2 (en) * 2003-02-18 2004-09-02 Applied Materials, Inc. Method for immersing a substrate
US20050048768A1 (en) * 2003-08-26 2005-03-03 Hiroaki Inoue Apparatus and method for forming interconnects
JP2005191304A (ja) * 2003-12-25 2005-07-14 Ebara Corp 基板保持装置及び基板保持方法、並びに基板処理装置
EP1697967A1 (en) 2003-12-25 2006-09-06 Ebara Corporation Substrate holding apparatus, substrate holding method, and substrate processing apparatus
TWI250614B (en) * 2005-04-08 2006-03-01 Chung Cheng Inst Of Technology Method for preparing copper interconnections of ULSI
JP4519037B2 (ja) * 2005-08-31 2010-08-04 東京エレクトロン株式会社 加熱装置及び塗布、現像装置
KR100746375B1 (ko) * 2005-12-21 2007-08-03 주식회사 실트론 가스 유입 라인 및 실리콘 단결정 성장장치
US7980000B2 (en) 2006-12-29 2011-07-19 Applied Materials, Inc. Vapor dryer having hydrophilic end effector
KR100796980B1 (ko) * 2007-01-17 2008-01-22 피에스케이 주식회사 기판 처리 장치 및 방법
US20110073469A1 (en) * 2008-03-19 2011-03-31 Yue Ma Electrochemical deposition system
US9799537B2 (en) 2010-12-03 2017-10-24 Applied Materials, Inc. Processing assembly for semiconductor workpiece and methods of processing same
US8541309B2 (en) * 2010-12-03 2013-09-24 Applied Materials, Inc. Processing assembly for semiconductor workpiece and methods of processing same
JP5529340B2 (ja) 2011-03-15 2014-06-25 東芝三菱電機産業システム株式会社 成膜装置
TWI484549B (zh) * 2013-02-08 2015-05-11 Sj High Technology Company 用於清潔半導體設備的零件之濕式清潔方法
JP5967034B2 (ja) * 2013-08-20 2016-08-10 トヨタ自動車株式会社 金属被膜の成膜装置および成膜方法
US9945044B2 (en) 2013-11-06 2018-04-17 Lam Research Corporation Method for uniform flow behavior in an electroplating cell
CN104607420B (zh) * 2015-01-15 2016-08-17 山东大学 小尺寸kdp晶体表面磁-射流清洗装置及清洗工艺
JP6197813B2 (ja) * 2015-03-11 2017-09-20 トヨタ自動車株式会社 金属皮膜の成膜装置およびその成膜方法
JP6486757B2 (ja) * 2015-04-23 2019-03-20 株式会社荏原製作所 基板処理装置
JP6974065B2 (ja) 2017-08-16 2021-12-01 株式会社荏原製作所 基板処理装置および基板を基板処理装置のテーブルから離脱させる方法
JP6875758B2 (ja) * 2017-10-20 2021-05-26 株式会社アルメックステクノロジーズ 表面処理装置
CN112403837B (zh) * 2020-11-11 2022-02-08 上饶市光耀光学设备制造有限公司 一种高精度光学镜片加工用镀膜装置
JP2022167192A (ja) * 2021-04-22 2022-11-04 国立研究開発法人産業技術総合研究所 複数の処理部を円周配置しためっき処理装置
CN115404467B (zh) * 2022-09-02 2024-01-09 江苏芯梦半导体设备有限公司 全自动化学镀系统及化学镀方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
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US5024746A (en) 1987-04-13 1991-06-18 Texas Instruments Incorporated Fixture and a method for plating contact bumps for integrated circuits
US5092975A (en) 1988-06-14 1992-03-03 Yamaha Corporation Metal plating apparatus
US5370741A (en) 1990-05-15 1994-12-06 Semitool, Inc. Dynamic semiconductor wafer processing using homogeneous chemical vapors
US6017437A (en) 1997-08-22 2000-01-25 Cutek Research, Inc. Process chamber and method for depositing and/or removing material on a substrate
JP3523197B2 (ja) * 1998-02-12 2004-04-26 エーシーエム リサーチ，インコーポレイティド メッキ設備及び方法
US6258220B1 (en) * 1998-11-30 2001-07-10 Applied Materials, Inc. Electro-chemical deposition system
JP4766579B2 (ja) * 1998-11-30 2011-09-07 アプライド マテリアルズ インコーポレイテッド 電気化学堆積装置
US6309520B1 (en) * 1998-12-07 2001-10-30 Semitool, Inc. Methods and apparatus for processing the surface of a microelectronic workpiece
US6352623B1 (en) 1999-12-17 2002-03-05 Nutool, Inc. Vertically configured chamber used for multiple processes

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007126756A (ja) * 2003-03-20 2007-05-24 Ebara Corp 無電解めっき装置及び無電解めっき方法
JP2007332435A (ja) * 2006-06-16 2007-12-27 Semicon Science:Kk 自動金属皮膜形成装置及びウェーハへの金属皮膜の形成方法
JP2008240037A (ja) * 2007-03-26 2008-10-09 Tokyo Seimitsu Co Ltd 電解加工ユニット装置及び電解加工洗浄乾燥方法
JP6999069B1 (ja) * 2021-03-17 2022-01-18 株式会社荏原製作所 めっき装置及びめっき装置のコンタクト部材洗浄方法
WO2022195756A1 (ja) * 2021-03-17 2022-09-22 株式会社荏原製作所 めっき装置及びめっき装置のコンタクト部材洗浄方法
JPWO2023032191A1 (enExample) * 2021-09-06 2023-03-09
JP7114002B1 (ja) * 2021-11-04 2022-08-05 株式会社荏原製作所 めっき装置およびコンタクト洗浄方法
WO2023079636A1 (ja) * 2021-11-04 2023-05-11 株式会社荏原製作所 めっき装置およびコンタクト洗浄方法
KR20230088928A (ko) * 2021-11-04 2023-06-20 가부시키가이샤 에바라 세이사꾸쇼 콘택트 세정 방법
KR102782656B1 (ko) 2021-11-04 2025-03-19 가부시키가이샤 에바라 세이사꾸쇼 콘택트 세정 방법
US12378689B2 (en) 2021-11-04 2025-08-05 Ebara Corporation Plating apparatus and contact cleaning method

Also Published As

Publication number Publication date
KR20030007468A (ko) 2003-01-23
TWI260676B (en) 2006-08-21
US20030089608A1 (en) 2003-05-15
CN1265425C (zh) 2006-07-19
WO2002058114A1 (en) 2002-07-25
CN1455947A (zh) 2003-11-12
US7083706B2 (en) 2006-08-01
EP1252650A1 (en) 2002-10-30

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