CN1265425C - 基片处理装置 - Google Patents

基片处理装置 Download PDF

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Publication number
CN1265425C
CN1265425C CNB028000455A CN02800045A CN1265425C CN 1265425 C CN1265425 C CN 1265425C CN B028000455 A CNB028000455 A CN B028000455A CN 02800045 A CN02800045 A CN 02800045A CN 1265425 C CN1265425 C CN 1265425C
Authority
CN
China
Prior art keywords
substrate
semiconductor chip
unit
cleaning
electroplating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB028000455A
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English (en)
Chinese (zh)
Other versions
CN1455947A (zh
Inventor
粂川正行
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ebara Corp
Original Assignee
Ebara Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ebara Corp filed Critical Ebara Corp
Publication of CN1455947A publication Critical patent/CN1455947A/zh
Application granted granted Critical
Publication of CN1265425C publication Critical patent/CN1265425C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H01L21/67167—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers surrounding a central transfer chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H01L21/67173—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers in-line arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67184—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the presence of more than one transfer chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H01L21/6723—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one plating chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68707—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a robot blade, or gripped by a gripper for conveyance

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Sustainable Development (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Robotics (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
CNB028000455A 2001-01-17 2002-01-16 基片处理装置 Expired - Fee Related CN1265425C (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP9537/2001 2001-01-17
JP9537/01 2001-01-17
JP2001009537A JP2002212786A (ja) 2001-01-17 2001-01-17 基板処理装置

Publications (2)

Publication Number Publication Date
CN1455947A CN1455947A (zh) 2003-11-12
CN1265425C true CN1265425C (zh) 2006-07-19

Family

ID=18877008

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB028000455A Expired - Fee Related CN1265425C (zh) 2001-01-17 2002-01-16 基片处理装置

Country Status (7)

Country Link
US (1) US7083706B2 (enExample)
EP (1) EP1252650A1 (enExample)
JP (1) JP2002212786A (enExample)
KR (1) KR20030007468A (enExample)
CN (1) CN1265425C (enExample)
TW (1) TWI260676B (enExample)
WO (1) WO2002058114A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI677599B (zh) * 2017-10-20 2019-11-21 日商Ａｌｍｅｘ Ｐｅ股份有限公司 電鍍裝置

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* Cited by examiner, † Cited by third party
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US6582578B1 (en) * 1999-04-08 2003-06-24 Applied Materials, Inc. Method and associated apparatus for tilting a substrate upon entry for metal deposition
WO2002029137A2 (en) * 2000-10-03 2002-04-11 Applied Materials,Inc. Method and associated apparatus for tilting a substrate upon entry for metal deposition
JP2002220692A (ja) 2001-01-24 2002-08-09 Ebara Corp めっき装置及び方法
JP2003027280A (ja) * 2001-07-18 2003-01-29 Ebara Corp めっき装置
US6798513B2 (en) * 2002-04-11 2004-09-28 Nanophotonics Ab Measuring module
US20040192066A1 (en) * 2003-02-18 2004-09-30 Applied Materials, Inc. Method for immersing a substrate
JP2007126756A (ja) * 2003-03-20 2007-05-24 Ebara Corp 無電解めっき装置及び無電解めっき方法
US20050048768A1 (en) * 2003-08-26 2005-03-03 Hiroaki Inoue Apparatus and method for forming interconnects
US7886685B2 (en) 2003-12-25 2011-02-15 Ebara Corporation Substrate holding apparatus, substrate holding method, and substrate processing apparatus
JP2005191304A (ja) * 2003-12-25 2005-07-14 Ebara Corp 基板保持装置及び基板保持方法、並びに基板処理装置
TWI250614B (en) * 2005-04-08 2006-03-01 Chung Cheng Inst Of Technology Method for preparing copper interconnections of ULSI
JP4519037B2 (ja) * 2005-08-31 2010-08-04 東京エレクトロン株式会社 加熱装置及び塗布、現像装置
KR100746375B1 (ko) * 2005-12-21 2007-08-03 주식회사 실트론 가스 유입 라인 및 실리콘 단결정 성장장치
JP4719631B2 (ja) * 2006-06-16 2011-07-06 三友セミコンエンジニアリング株式会社 自動金属皮膜形成装置及びウェーハへの金属皮膜の形成方法
US7980000B2 (en) 2006-12-29 2011-07-19 Applied Materials, Inc. Vapor dryer having hydrophilic end effector
KR100796980B1 (ko) * 2007-01-17 2008-01-22 피에스케이 주식회사 기판 처리 장치 및 방법
JP5116330B2 (ja) * 2007-03-26 2013-01-09 株式会社東京精密 電解加工ユニット装置及び電解加工洗浄乾燥方法
US20110073469A1 (en) * 2008-03-19 2011-03-31 Yue Ma Electrochemical deposition system
US9799537B2 (en) 2010-12-03 2017-10-24 Applied Materials, Inc. Processing assembly for semiconductor workpiece and methods of processing same
US8541309B2 (en) * 2010-12-03 2013-09-24 Applied Materials, Inc. Processing assembly for semiconductor workpiece and methods of processing same
WO2012124047A1 (ja) 2011-03-15 2012-09-20 東芝三菱電機産業システム株式会社 成膜装置
TWI484549B (zh) * 2013-02-08 2015-05-11 Sj High Technology Company 用於清潔半導體設備的零件之濕式清潔方法
JP5967034B2 (ja) * 2013-08-20 2016-08-10 トヨタ自動車株式会社 金属被膜の成膜装置および成膜方法
US9945044B2 (en) 2013-11-06 2018-04-17 Lam Research Corporation Method for uniform flow behavior in an electroplating cell
CN104607420B (zh) * 2015-01-15 2016-08-17 山东大学 小尺寸kdp晶体表面磁-射流清洗装置及清洗工艺
JP6197813B2 (ja) * 2015-03-11 2017-09-20 トヨタ自動車株式会社 金属皮膜の成膜装置およびその成膜方法
JP6486757B2 (ja) * 2015-04-23 2019-03-20 株式会社荏原製作所 基板処理装置
JP6974065B2 (ja) * 2017-08-16 2021-12-01 株式会社荏原製作所 基板処理装置および基板を基板処理装置のテーブルから離脱させる方法
CN112403837B (zh) * 2020-11-11 2022-02-08 上饶市光耀光学设备制造有限公司 一种高精度光学镜片加工用镀膜装置
WO2022195756A1 (ja) * 2021-03-17 2022-09-22 株式会社荏原製作所 めっき装置及びめっき装置のコンタクト部材洗浄方法
JP2022167192A (ja) * 2021-04-22 2022-11-04 国立研究開発法人産業技術総合研究所 複数の処理部を円周配置しためっき処理装置
WO2023032191A1 (ja) * 2021-09-06 2023-03-09 株式会社荏原製作所 めっき方法及びめっき装置
US12378689B2 (en) 2021-11-04 2025-08-05 Ebara Corporation Plating apparatus and contact cleaning method
CN115404467B (zh) * 2022-09-02 2024-01-09 江苏芯梦半导体设备有限公司 全自动化学镀系统及化学镀方法

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI677599B (zh) * 2017-10-20 2019-11-21 日商Ａｌｍｅｘ Ｐｅ股份有限公司 電鍍裝置

Also Published As

Publication number Publication date
KR20030007468A (ko) 2003-01-23
TWI260676B (en) 2006-08-21
JP2002212786A (ja) 2002-07-31
CN1455947A (zh) 2003-11-12
US20030089608A1 (en) 2003-05-15
EP1252650A1 (en) 2002-10-30
WO2002058114A1 (en) 2002-07-25
US7083706B2 (en) 2006-08-01

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C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
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CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20060719

Termination date: 20100219