JP2002170377A - 薄膜磁性体記憶装置 - Google Patents

薄膜磁性体記憶装置

Info

Publication number
JP2002170377A
JP2002170377A JP2001020277A JP2001020277A JP2002170377A JP 2002170377 A JP2002170377 A JP 2002170377A JP 2001020277 A JP2001020277 A JP 2001020277A JP 2001020277 A JP2001020277 A JP 2001020277A JP 2002170377 A JP2002170377 A JP 2002170377A
Authority
JP
Japan
Prior art keywords
data
read
write
word line
lines
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001020277A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002170377A5 (enExample
Inventor
Hideto Hidaka
秀人 日高
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2001020277A priority Critical patent/JP2002170377A/ja
Priority to US09/887,321 priority patent/US6778430B2/en
Priority to DE10133646A priority patent/DE10133646A1/de
Priority to TW090120375A priority patent/TW518596B/zh
Priority to KR1020010051558A priority patent/KR100610718B1/ko
Priority to CNB011258837A priority patent/CN1186780C/zh
Publication of JP2002170377A publication Critical patent/JP2002170377A/ja
Priority to US10/891,109 priority patent/US7254057B2/en
Priority to US11/708,030 priority patent/US7489001B2/en
Publication of JP2002170377A5 publication Critical patent/JP2002170377A5/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
  • Semiconductor Memories (AREA)
JP2001020277A 2000-09-22 2001-01-29 薄膜磁性体記憶装置 Pending JP2002170377A (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP2001020277A JP2002170377A (ja) 2000-09-22 2001-01-29 薄膜磁性体記憶装置
US09/887,321 US6778430B2 (en) 2000-09-22 2001-06-25 Magnetic thin-film memory device for quick and stable reading data
DE10133646A DE10133646A1 (de) 2000-09-22 2001-07-11 Magnetdünnfilmspeichervorrichtung zum schnellen und stabilen Lesen von Daten
TW090120375A TW518596B (en) 2000-09-22 2001-08-20 Magnetic thin-film memory device
KR1020010051558A KR100610718B1 (ko) 2000-09-22 2001-08-25 데이터 판독 동작을 고속으로 또한 안정적으로 실행하는박막 자성체 기억 장치
CNB011258837A CN1186780C (zh) 2000-09-22 2001-08-27 高速且稳定地进行数据读出工作的薄膜磁性体存储器
US10/891,109 US7254057B2 (en) 2000-09-22 2004-07-15 Magnetic thin-film memory device for quick and stable reading data
US11/708,030 US7489001B2 (en) 2000-09-22 2007-02-20 Magnetic thin-film memory device for quick and stable reading data

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2000-288642 2000-09-22
JP2000288642 2000-09-22
JP2001020277A JP2002170377A (ja) 2000-09-22 2001-01-29 薄膜磁性体記憶装置

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2010212277A Division JP5100806B2 (ja) 2000-09-22 2010-09-22 薄膜磁性体記憶装置
JP2010212276A Division JP5100805B2 (ja) 2000-09-22 2010-09-22 薄膜磁性体記憶装置

Publications (2)

Publication Number Publication Date
JP2002170377A true JP2002170377A (ja) 2002-06-14
JP2002170377A5 JP2002170377A5 (enExample) 2008-01-17

Family

ID=26600526

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001020277A Pending JP2002170377A (ja) 2000-09-22 2001-01-29 薄膜磁性体記憶装置

Country Status (6)

Country Link
US (3) US6778430B2 (enExample)
JP (1) JP2002170377A (enExample)
KR (1) KR100610718B1 (enExample)
CN (1) CN1186780C (enExample)
DE (1) DE10133646A1 (enExample)
TW (1) TW518596B (enExample)

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002260378A (ja) * 2001-03-05 2002-09-13 Mitsubishi Electric Corp 記憶装置
JP2002270790A (ja) * 2000-12-27 2002-09-20 Toshiba Corp 半導体記憶装置
JP2004165490A (ja) * 2002-11-14 2004-06-10 Renesas Technology Corp 薄膜磁性体記憶装置
JP2005251273A (ja) * 2004-03-03 2005-09-15 Renesas Technology Corp 半導体記憶装置
JP2006295177A (ja) * 2005-04-08 2006-10-26 Samsung Electronics Co Ltd 半導体メモリ装置のレイアウト構造及びそのレイアウト方法
JP2006303150A (ja) * 2005-04-20 2006-11-02 Nippon Telegr & Teleph Corp <Ntt> メモリ装置
WO2007049353A1 (ja) * 2005-10-28 2007-05-03 Fujitsu Limited 磁気メモリ装置及びその書き込み方法
CN100350497C (zh) * 2002-09-13 2007-11-21 三菱电机株式会社 抑制了电流路径上的晶体管组的电阻的薄膜磁性体存储器
JP2009021005A (ja) * 2008-09-05 2009-01-29 Renesas Technology Corp 薄膜磁性体記憶装置
JP2009176396A (ja) * 2007-12-28 2009-08-06 Renesas Technology Corp 半導体装置
JP2010028134A (ja) * 2009-10-28 2010-02-04 Renesas Technology Corp 薄膜磁性体記憶装置
JP2010081172A (ja) * 2008-09-25 2010-04-08 Toshiba Corp プログラマブル論理回路
WO2010038565A1 (ja) * 2008-09-30 2010-04-08 日本電気株式会社 磁気ランダムアクセスメモリ及び磁気ランダムアクセスメモリの動作方法
US8027184B2 (en) 2006-03-06 2011-09-27 Nec Corporation Semiconductor storage device and operating method of the same
US8144504B2 (en) 2008-07-10 2012-03-27 Samsung Electronics Co., Ltd. Method of operating magnetic random access memory device
JP2013196717A (ja) * 2012-03-16 2013-09-30 Toshiba Corp 半導体記憶装置およびその駆動方法
JP2015035653A (ja) * 2013-08-07 2015-02-19 凸版印刷株式会社 不揮発性フリップフロップ、不揮発性ラッチおよび不揮発性メモリ素子

Families Citing this family (49)

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JP2002170377A (ja) * 2000-09-22 2002-06-14 Mitsubishi Electric Corp 薄膜磁性体記憶装置
JP4667594B2 (ja) * 2000-12-25 2011-04-13 ルネサスエレクトロニクス株式会社 薄膜磁性体記憶装置
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JP5019681B2 (ja) 2001-04-26 2012-09-05 ルネサスエレクトロニクス株式会社 薄膜磁性体記憶装置
JP3869682B2 (ja) * 2001-06-12 2007-01-17 株式会社ルネサステクノロジ 半導体装置
JP2003016777A (ja) * 2001-06-28 2003-01-17 Mitsubishi Electric Corp 薄膜磁性体記憶装置
US6504750B1 (en) * 2001-08-27 2003-01-07 Micron Technology, Inc. Resistive memory element sensing using averaging
JP4780874B2 (ja) * 2001-09-04 2011-09-28 ルネサスエレクトロニクス株式会社 薄膜磁性体記憶装置
JP4570313B2 (ja) * 2001-10-25 2010-10-27 ルネサスエレクトロニクス株式会社 薄膜磁性体記憶装置
JP2003151262A (ja) * 2001-11-15 2003-05-23 Toshiba Corp 磁気ランダムアクセスメモリ
JP2003196973A (ja) * 2001-12-21 2003-07-11 Mitsubishi Electric Corp 薄膜磁性体記憶装置
US7020008B2 (en) 2001-12-26 2006-03-28 Renesas Technology Corp. Thin film magnetic memory device writing data with bidirectional current
JP4262954B2 (ja) * 2001-12-26 2009-05-13 株式会社ルネサステクノロジ 薄膜磁性体記憶装置
US6735111B2 (en) * 2002-01-16 2004-05-11 Micron Technology, Inc. Magnetoresistive memory devices and assemblies
US6940748B2 (en) * 2002-05-16 2005-09-06 Micron Technology, Inc. Stacked 1T-nMTJ MRAM structure
US6857055B2 (en) * 2002-08-15 2005-02-15 Micron Technology Inc. Programmable embedded DRAM current monitor
JP4679036B2 (ja) * 2002-09-12 2011-04-27 ルネサスエレクトロニクス株式会社 記憶装置
JP2004145952A (ja) * 2002-10-23 2004-05-20 Nec Electronics Corp Ｍｒａｍ及びその書込方法
US6944049B2 (en) * 2002-10-30 2005-09-13 Infineon Technologies Ag Magnetic tunnel junction memory cell architecture
JP2004213771A (ja) 2002-12-27 2004-07-29 Toshiba Corp 磁気ランダムアクセスメモリ
US6714442B1 (en) * 2003-01-17 2004-03-30 Motorola, Inc. MRAM architecture with a grounded write bit line and electrically isolated read bit line
CN100372025C (zh) * 2003-02-18 2008-02-27 义隆电子股份有限公司 存储器的高速感测电路及方法
JP4315703B2 (ja) * 2003-02-27 2009-08-19 株式会社ルネサステクノロジ 薄膜磁性体記憶装置
JP3884399B2 (ja) * 2003-05-21 2007-02-21 株式会社東芝 磁気記憶装置
US7283384B1 (en) 2004-03-24 2007-10-16 Silicon Magnetic Systems Magnetic memory array architecture
US7071009B2 (en) * 2004-04-01 2006-07-04 Headway Technologies, Inc. MRAM arrays with reduced bit line resistance and method to make the same
KR100754930B1 (ko) * 2004-12-22 2007-09-03 한국과학기술원 전압제어 자화반전 기록방식의 ｍｒａｍ 소자 및 이를이용한 정보의 기록 및 판독 방법
JP4890016B2 (ja) * 2005-03-16 2012-03-07 ルネサスエレクトロニクス株式会社 不揮発性半導体記憶装置
JP2007035663A (ja) * 2005-07-22 2007-02-08 Matsushita Electric Ind Co Ltd 半導体記憶装置
US7929342B2 (en) * 2005-08-15 2011-04-19 Nec Corporation Magnetic memory cell, magnetic random access memory, and data read/write method for magnetic random access memory
CN101277997B (zh) * 2005-10-07 2011-11-09 柯尼卡美能达精密光学株式会社 纤维素酯膜的制造方法、纤维素酯膜、偏振片和液晶显示装置
US8009466B2 (en) * 2007-02-21 2011-08-30 Nec Corporation Semiconductor storage device
US7514271B2 (en) * 2007-03-30 2009-04-07 International Business Machines Corporation Method of forming high density planar magnetic domain wall memory
US7872907B2 (en) * 2007-12-28 2011-01-18 Renesas Electronics Corporation Semiconductor device
US8344433B2 (en) * 2009-04-14 2013-01-01 Qualcomm Incorporated Magnetic tunnel junction (MTJ) and methods, and magnetic random access memory (MRAM) employing same
US8582353B2 (en) * 2009-12-30 2013-11-12 Hynix Semiconductor Inc. Nonvolatile memory device
US8796794B2 (en) * 2010-12-17 2014-08-05 Intel Corporation Write current reduction in spin transfer torque memory devices
US9058857B2 (en) * 2011-10-10 2015-06-16 Micron Technology, Inc. Cross-point memory compensation
KR102023625B1 (ko) * 2012-05-04 2019-09-20 삼성전자 주식회사 자기 메모리 소자 및 이에 대한 정보 쓰기 및 읽기 방법
CN102917177B (zh) * 2012-10-22 2015-05-20 清华大学 一种浮栅型图像传感器阵列结构及其读出方法
US9792986B2 (en) * 2015-05-29 2017-10-17 Intel Corporation Phase change memory current
JP6271654B1 (ja) * 2016-08-05 2018-01-31 株式会社東芝 不揮発性メモリ
JP2019054200A (ja) * 2017-09-19 2019-04-04 東芝メモリ株式会社 抵抗変化型メモリ
CN110197836B (zh) * 2018-02-27 2022-06-03 上海磁宇信息科技有限公司 含阵列内哑元的mram阵列
CN111696600B (zh) * 2019-03-12 2022-08-23 中芯国际集成电路制造(上海)有限公司 磁性存储器
JP2021048190A (ja) * 2019-09-17 2021-03-25 キオクシア株式会社 磁気メモリ
US20220406995A1 (en) * 2020-02-07 2022-12-22 Tdk Corporation Magnetic recording array and reservoir element
WO2021222521A1 (en) * 2020-04-29 2021-11-04 University Of Southern California Magneto-electric sensor for hardware trojan detection
JP2024046119A (ja) 2022-09-22 2024-04-03 キオクシア株式会社 メモリデバイス

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Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002270790A (ja) * 2000-12-27 2002-09-20 Toshiba Corp 半導体記憶装置
JP2002260378A (ja) * 2001-03-05 2002-09-13 Mitsubishi Electric Corp 記憶装置
CN100350497C (zh) * 2002-09-13 2007-11-21 三菱电机株式会社 抑制了电流路径上的晶体管组的电阻的薄膜磁性体存储器
JP2004165490A (ja) * 2002-11-14 2004-06-10 Renesas Technology Corp 薄膜磁性体記憶装置
JP2005251273A (ja) * 2004-03-03 2005-09-15 Renesas Technology Corp 半導体記憶装置
JP2006295177A (ja) * 2005-04-08 2006-10-26 Samsung Electronics Co Ltd 半導体メモリ装置のレイアウト構造及びそのレイアウト方法
JP2006303150A (ja) * 2005-04-20 2006-11-02 Nippon Telegr & Teleph Corp <Ntt> メモリ装置
WO2007049353A1 (ja) * 2005-10-28 2007-05-03 Fujitsu Limited 磁気メモリ装置及びその書き込み方法
US8027184B2 (en) 2006-03-06 2011-09-27 Nec Corporation Semiconductor storage device and operating method of the same
JP2009176396A (ja) * 2007-12-28 2009-08-06 Renesas Technology Corp 半導体装置
US8144504B2 (en) 2008-07-10 2012-03-27 Samsung Electronics Co., Ltd. Method of operating magnetic random access memory device
JP2009021005A (ja) * 2008-09-05 2009-01-29 Renesas Technology Corp 薄膜磁性体記憶装置
JP2010081172A (ja) * 2008-09-25 2010-04-08 Toshiba Corp プログラマブル論理回路
WO2010038565A1 (ja) * 2008-09-30 2010-04-08 日本電気株式会社 磁気ランダムアクセスメモリ及び磁気ランダムアクセスメモリの動作方法
JP5354391B2 (ja) * 2008-09-30 2013-11-27 日本電気株式会社 磁気ランダムアクセスメモリ及び磁気ランダムアクセスメモリの動作方法
JP2010028134A (ja) * 2009-10-28 2010-02-04 Renesas Technology Corp 薄膜磁性体記憶装置
JP2013196717A (ja) * 2012-03-16 2013-09-30 Toshiba Corp 半導体記憶装置およびその駆動方法
US8848457B2 (en) 2012-03-16 2014-09-30 Kabushiki Kaisha Toshiba Semiconductor storage device and driving method thereof
JP2015035653A (ja) * 2013-08-07 2015-02-19 凸版印刷株式会社 不揮発性フリップフロップ、不揮発性ラッチおよび不揮発性メモリ素子

Also Published As

Publication number Publication date
US7489001B2 (en) 2009-02-10
KR20020023109A (ko) 2002-03-28
CN1347121A (zh) 2002-05-01
KR100610718B1 (ko) 2006-08-09
DE10133646A1 (de) 2002-04-18
US20030156448A1 (en) 2003-08-21
US20040252570A1 (en) 2004-12-16
US20070147110A1 (en) 2007-06-28
US6778430B2 (en) 2004-08-17
TW518596B (en) 2003-01-21
US7254057B2 (en) 2007-08-07
CN1186780C (zh) 2005-01-26

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