JP2002110973A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JP2002110973A
JP2002110973A JP2000299546A JP2000299546A JP2002110973A JP 2002110973 A JP2002110973 A JP 2002110973A JP 2000299546 A JP2000299546 A JP 2000299546A JP 2000299546 A JP2000299546 A JP 2000299546A JP 2002110973 A JP2002110973 A JP 2002110973A
Authority
JP
Japan
Prior art keywords
insulating film
gate insulating
mos transistor
semiconductor device
threshold value
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2000299546A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002110973A5 (https=
Inventor
Hitomi Watanabe
ひと美 渡邉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Instruments Inc
Original Assignee
Seiko Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instruments Inc filed Critical Seiko Instruments Inc
Priority to JP2000299546A priority Critical patent/JP2002110973A/ja
Priority to US09/916,518 priority patent/US6656780B2/en
Publication of JP2002110973A publication Critical patent/JP2002110973A/ja
Publication of JP2002110973A5 publication Critical patent/JP2002110973A5/ja
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01332—Making the insulator
    • H10D64/01336—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid
    • H10D64/0134—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid with a treatment, e.g. annealing, after the formation of the insulator and before the formation of the conductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01332—Making the insulator
    • H10D64/01336—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid
    • H10D64/01344—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid in a nitrogen-containing ambient, e.g. N2O oxidation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/693—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator the insulator comprising nitrogen, e.g. nitrides, oxynitrides or nitrogen-doped materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0181—Manufacturing their gate insulating layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Formation Of Insulating Films (AREA)
JP2000299546A 2000-09-29 2000-09-29 半導体装置の製造方法 Withdrawn JP2002110973A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2000299546A JP2002110973A (ja) 2000-09-29 2000-09-29 半導体装置の製造方法
US09/916,518 US6656780B2 (en) 2000-09-29 2001-07-27 Method of manufacturing a semiconductor device having nitrogen ions by twice RTA processes

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000299546A JP2002110973A (ja) 2000-09-29 2000-09-29 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JP2002110973A true JP2002110973A (ja) 2002-04-12
JP2002110973A5 JP2002110973A5 (https=) 2005-03-17

Family

ID=18781335

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000299546A Withdrawn JP2002110973A (ja) 2000-09-29 2000-09-29 半導体装置の製造方法

Country Status (2)

Country Link
US (1) US6656780B2 (https=)
JP (1) JP2002110973A (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8841664B2 (en) 2011-03-04 2014-09-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG110043A1 (en) * 2003-05-07 2005-04-28 Systems On Silicon Mfg Co Pte Rapid thermal annealing of silicon structures
KR100660909B1 (ko) * 2006-01-06 2006-12-26 삼성전자주식회사 반도체 소자 및 그 제조 방법
JP2009105390A (ja) * 2007-10-05 2009-05-14 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
US20090152009A1 (en) * 2007-12-18 2009-06-18 Halliburton Energy Services, Inc., A Delaware Corporation Nano particle reinforced polymer element for stator and rotor assembly
US8329525B2 (en) 2010-10-04 2012-12-11 Stmicroelectronics, Inc. Method for fabricating at least three metal-oxide semiconductor transistors having different threshold voltages
FR2965660A1 (fr) * 2010-10-04 2012-04-06 St Microelectronics Crolles 2 Procédé de fabrication d'au moins trois transistors présentant trois tensions de seuil différentes

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10107281A (ja) * 1996-09-30 1998-04-24 Nec Corp 半導体装置及びその製造方法
US6087229A (en) * 1998-03-09 2000-07-11 Lsi Logic Corporation Composite semiconductor gate dielectrics
JP2000012856A (ja) * 1998-06-26 2000-01-14 Sony Corp Ｍｏｓトランジスタの製造方法
JP3383632B2 (ja) * 2000-02-23 2003-03-04 沖電気工業株式会社 Ｍｏｓトランジスタの製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8841664B2 (en) 2011-03-04 2014-09-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device

Also Published As

Publication number Publication date
US20020039816A1 (en) 2002-04-04
US6656780B2 (en) 2003-12-02

Similar Documents

Publication Publication Date Title
JPH0774128A (ja) 自己整合シリサイド工程
JPH05326552A (ja) 半導体素子およびその製造方法
JPH0571174B2 (https=)
JP2002110973A (ja) 半導体装置の製造方法
JPH09306862A (ja) 半導体装置の製造方法
JPH05206454A (ja) Ｍｉｓ型半導体装置の製造方法
JPH0612826B2 (ja) 薄膜トランジスタの製造方法
JP2897555B2 (ja) 半導体装置の製造方法
US6013554A (en) Method for fabricating an LDD MOS transistor
JP2881824B2 (ja) 半導体装置の製造方法
JPH0851205A (ja) 半導体装置の製造方法
JPH05190566A (ja) 半導体装置の製造方法
JPH10125623A (ja) 半導体装置の製造方法
JP2001094100A (ja) 半導体装置の製造方法
JPH05335503A (ja) 半導体装置の製造方法
JPH1131814A (ja) 半導体装置の製造方法
JP3684520B2 (ja) 半導体装置及びその製造方法
JP4541582B2 (ja) 半導体装置の製造方法
JP2002094053A (ja) 半導体装置の製造方法
KR100477542B1 (ko) 반도체 소자의 트랜지스터 제조 방법
JPH06252397A (ja) 高耐圧用トランジスタを有する半導体装置
JP3108927B2 (ja) 半導体装置の製造方法
KR101004808B1 (ko) 반도체 소자의 실리사이드 형성 방법
JP2000331949A (ja) 半導体集積回路装置の製造方法
JPS6281051A (ja) 半導体装置とその製造方法

Legal Events

Date Code Title Description
RD01 Notification of change of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7421

Effective date: 20040303

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20040412

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20040412

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20050603

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20070626

A761 Written withdrawal of application

Free format text: JAPANESE INTERMEDIATE CODE: A761

Effective date: 20070827