JP2002110973A5 - - Google Patents

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Publication number
JP2002110973A5
JP2002110973A5 JP2000299546A JP2000299546A JP2002110973A5 JP 2002110973 A5 JP2002110973 A5 JP 2002110973A5 JP 2000299546 A JP2000299546 A JP 2000299546A JP 2000299546 A JP2000299546 A JP 2000299546A JP 2002110973 A5 JP2002110973 A5 JP 2002110973A5
Authority
JP
Japan
Prior art keywords
gate electrode
transistor
patterning
transistors
continuing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2000299546A
Other languages
English (en)
Japanese (ja)
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JP2002110973A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2000299546A priority Critical patent/JP2002110973A/ja
Priority claimed from JP2000299546A external-priority patent/JP2002110973A/ja
Priority to US09/916,518 priority patent/US6656780B2/en
Publication of JP2002110973A publication Critical patent/JP2002110973A/ja
Publication of JP2002110973A5 publication Critical patent/JP2002110973A5/ja
Withdrawn legal-status Critical Current

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JP2000299546A 2000-09-29 2000-09-29 半導体装置の製造方法 Withdrawn JP2002110973A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2000299546A JP2002110973A (ja) 2000-09-29 2000-09-29 半導体装置の製造方法
US09/916,518 US6656780B2 (en) 2000-09-29 2001-07-27 Method of manufacturing a semiconductor device having nitrogen ions by twice RTA processes

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000299546A JP2002110973A (ja) 2000-09-29 2000-09-29 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JP2002110973A JP2002110973A (ja) 2002-04-12
JP2002110973A5 true JP2002110973A5 (https=) 2005-03-17

Family

ID=18781335

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000299546A Withdrawn JP2002110973A (ja) 2000-09-29 2000-09-29 半導体装置の製造方法

Country Status (2)

Country Link
US (1) US6656780B2 (https=)
JP (1) JP2002110973A (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG110043A1 (en) * 2003-05-07 2005-04-28 Systems On Silicon Mfg Co Pte Rapid thermal annealing of silicon structures
KR100660909B1 (ko) * 2006-01-06 2006-12-26 삼성전자주식회사 반도체 소자 및 그 제조 방법
JP2009105390A (ja) * 2007-10-05 2009-05-14 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
US20090152009A1 (en) * 2007-12-18 2009-06-18 Halliburton Energy Services, Inc., A Delaware Corporation Nano particle reinforced polymer element for stator and rotor assembly
US8329525B2 (en) 2010-10-04 2012-12-11 Stmicroelectronics, Inc. Method for fabricating at least three metal-oxide semiconductor transistors having different threshold voltages
FR2965660A1 (fr) * 2010-10-04 2012-04-06 St Microelectronics Crolles 2 Procédé de fabrication d'au moins trois transistors présentant trois tensions de seuil différentes
US8841664B2 (en) 2011-03-04 2014-09-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10107281A (ja) * 1996-09-30 1998-04-24 Nec Corp 半導体装置及びその製造方法
US6087229A (en) * 1998-03-09 2000-07-11 Lsi Logic Corporation Composite semiconductor gate dielectrics
JP2000012856A (ja) * 1998-06-26 2000-01-14 Sony Corp Ｍｏｓトランジスタの製造方法
JP3383632B2 (ja) * 2000-02-23 2003-03-04 沖電気工業株式会社 Ｍｏｓトランジスタの製造方法

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