JP2002075783A - 温度補償用薄膜コンデンサ - Google Patents

温度補償用薄膜コンデンサ

Info

Publication number
JP2002075783A
JP2002075783A JP2000256405A JP2000256405A JP2002075783A JP 2002075783 A JP2002075783 A JP 2002075783A JP 2000256405 A JP2000256405 A JP 2000256405A JP 2000256405 A JP2000256405 A JP 2000256405A JP 2002075783 A JP2002075783 A JP 2002075783A
Authority
JP
Japan
Prior art keywords
thin film
dielectric
dielectric thin
capacitor
temperature compensation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2000256405A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002075783A5 (enExample
Inventor
Hitoshi Kitagawa
均 北川
Makoto Sasaki
真 佐々木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Alps Alpine Co Ltd
Original Assignee
Alps Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Alps Electric Co Ltd filed Critical Alps Electric Co Ltd
Priority to JP2000256405A priority Critical patent/JP2002075783A/ja
Priority to EP01306733A priority patent/EP1182696A3/en
Priority to CNB011239670A priority patent/CN1197103C/zh
Priority to KR10-2001-0048689A priority patent/KR100450101B1/ko
Priority to US09/930,862 priority patent/US6477036B2/en
Publication of JP2002075783A publication Critical patent/JP2002075783A/ja
Publication of JP2002075783A5 publication Critical patent/JP2002075783A5/ja
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/33—Thin- or thick-film capacitors (thin- or thick-film circuits; capacitors without a potential-jump or surface barrier specially adapted for integrated circuits, details thereof, multistep manufacturing processes therefor)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/20—Dielectrics using combinations of dielectrics from more than one of groups H01G4/02 - H01G4/06
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Inorganic Insulating Materials (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
  • Ceramic Capacitors (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP2000256405A 2000-08-25 2000-08-25 温度補償用薄膜コンデンサ Withdrawn JP2002075783A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2000256405A JP2002075783A (ja) 2000-08-25 2000-08-25 温度補償用薄膜コンデンサ
EP01306733A EP1182696A3 (en) 2000-08-25 2001-08-07 Temperature compensating thinfilm capacitor
CNB011239670A CN1197103C (zh) 2000-08-25 2001-08-09 温度补偿用薄膜电容器
KR10-2001-0048689A KR100450101B1 (ko) 2000-08-25 2001-08-13 온도 보상용 박막 콘덴서
US09/930,862 US6477036B2 (en) 2000-08-25 2001-08-16 Temperature compensating thin-film capacitor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000256405A JP2002075783A (ja) 2000-08-25 2000-08-25 温度補償用薄膜コンデンサ

Publications (2)

Publication Number Publication Date
JP2002075783A true JP2002075783A (ja) 2002-03-15
JP2002075783A5 JP2002075783A5 (enExample) 2004-09-09

Family

ID=18745021

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000256405A Withdrawn JP2002075783A (ja) 2000-08-25 2000-08-25 温度補償用薄膜コンデンサ

Country Status (5)

Country Link
US (1) US6477036B2 (enExample)
EP (1) EP1182696A3 (enExample)
JP (1) JP2002075783A (enExample)
KR (1) KR100450101B1 (enExample)
CN (1) CN1197103C (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008136461A1 (ja) * 2007-04-27 2008-11-13 Nec Corporation 広帯域容量素子
JP2016075597A (ja) * 2014-10-07 2016-05-12 国立大学法人 岡山大学 薄膜型水素ガスセンサ
JP2023051426A (ja) * 2021-09-30 2023-04-11 Tdk株式会社 薄膜キャパシタ、電源モジュールおよび電子機器

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004095638A (ja) * 2002-08-29 2004-03-25 Fujitsu Ltd 薄膜デカップリングキャパシタとその製造方法
US20040061990A1 (en) * 2002-09-26 2004-04-01 Dougherty T. Kirk Temperature-compensated ferroelectric capacitor device, and its fabrication
US20060000542A1 (en) * 2004-06-30 2006-01-05 Yongki Min Metal oxide ceramic thin film on base metal electrode
US7216406B2 (en) * 2004-09-29 2007-05-15 Intel Corporation Method forming split thin film capacitors with multiple voltages
US7290315B2 (en) * 2004-10-21 2007-11-06 Intel Corporation Method for making a passive device structure
US20060099803A1 (en) * 2004-10-26 2006-05-11 Yongki Min Thin film capacitor
US9572258B2 (en) * 2004-12-30 2017-02-14 Intel Corporation Method of forming a substrate core with embedded capacitor and structures formed thereby
US7372126B2 (en) * 2005-03-31 2008-05-13 Intel Corporation Organic substrates with embedded thin-film capacitors, methods of making same, and systems containing same
US7629269B2 (en) * 2005-03-31 2009-12-08 Intel Corporation High-k thin film grain size control
US20060220177A1 (en) * 2005-03-31 2006-10-05 Palanduz Cengiz A Reduced porosity high-k thin film mixed grains for thin film capacitor applications
US7288459B2 (en) * 2005-03-31 2007-10-30 Intel Corporation Organic substrates with integral thin-film capacitors, methods of making same, and systems containing same
US7375412B1 (en) * 2005-03-31 2008-05-20 Intel Corporation iTFC with optimized C(T)
US7453144B2 (en) * 2005-06-29 2008-11-18 Intel Corporation Thin film capacitors and methods of making the same
KR101420773B1 (ko) * 2009-07-15 2014-07-17 주성엔지니어링(주) 전기광학소자 및 이의 제작 방법
JP5120406B2 (ja) * 2010-03-31 2013-01-16 Ｔｄｋ株式会社 セラミック電子部品及びセラミック電子部品の製造方法
WO2013009772A1 (en) 2011-07-11 2013-01-17 Quantumscape Corporation Solid state energy storage devices
US9087645B2 (en) * 2012-01-30 2015-07-21 QuantrumScape Corporation Solid state energy storage devices
JP5441020B1 (ja) * 2012-08-29 2014-03-12 Ｔｏｔｏ株式会社 静電チャック
US10115527B2 (en) * 2015-03-09 2018-10-30 Blackberry Limited Thin film dielectric stack
US10122357B2 (en) 2016-11-14 2018-11-06 Ford Global Technologies, Llc Sensorless temperature compensation for power switching devices
US11942418B2 (en) * 2021-07-23 2024-03-26 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structure and method for making the same

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US88216A (en) * 1869-03-23 Improved crushing and q-rindino-machine
JPS4870855A (enExample) * 1971-12-29 1973-09-26
JPS5873908A (ja) 1981-10-28 1983-05-04 ティーディーケイ株式会社 高周波用誘電体磁器組成物
US4423087A (en) * 1981-12-28 1983-12-27 International Business Machines Corporation Thin film capacitor with a dual bottom electrode structure
JPS62222512A (ja) * 1986-03-20 1987-09-30 キヤノン株式会社 誘電体材料
JPS63110618A (ja) * 1986-10-28 1988-05-16 沖電気工業株式会社 積層型マイクロ波用誘電体磁器組成物
DE68906219T2 (de) 1988-08-25 1993-08-05 Matsushita Electric Ind Co Ltd Duennfilmkapazitaet und verfahren zur herstellung einer integrierten hybridmikrowellenschaltung.
JPH03252160A (ja) * 1990-02-28 1991-11-11 Nec Corp コンデンサ、コンデンサネットワーク及び抵抗―コンデンサネットワーク
US6088216A (en) * 1995-04-28 2000-07-11 International Business Machines Corporation Lead silicate based capacitor structures
US5638252A (en) * 1995-06-14 1997-06-10 Hughes Aircraft Company Electrical device and method utilizing a positive-temperature-coefficient ferroelectric capacitor
DE69624042T2 (de) 1995-06-16 2003-06-05 At&T Ipm Corp., Coral Gables TiO2 dotiertes, Ta2O5 enthaltendes dielektrisches Material und dieses enthaltende Bauteile
US5978207A (en) * 1996-10-30 1999-11-02 The Research Foundation Of The State University Of New York Thin film capacitor
JP3123448B2 (ja) * 1996-11-13 2001-01-09 日本電気株式会社 薄膜キャパシタ
US6236102B1 (en) * 1997-12-13 2001-05-22 Samsung Electro-Mechanics Co., Ltd. Chip type thin film capacitor, and manufacturing method therefor
JP2000183289A (ja) * 1998-12-18 2000-06-30 Murata Mfg Co Ltd 誘電体素子の特性制御方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008136461A1 (ja) * 2007-04-27 2008-11-13 Nec Corporation 広帯域容量素子
JP2016075597A (ja) * 2014-10-07 2016-05-12 国立大学法人 岡山大学 薄膜型水素ガスセンサ
JP2023051426A (ja) * 2021-09-30 2023-04-11 Tdk株式会社 薄膜キャパシタ、電源モジュールおよび電子機器
JP7682759B2 (ja) 2021-09-30 2025-05-26 Tdk株式会社 薄膜キャパシタ、電源モジュールおよび電子機器

Also Published As

Publication number Publication date
KR20020016508A (ko) 2002-03-04
EP1182696A2 (en) 2002-02-27
US6477036B2 (en) 2002-11-05
CN1197103C (zh) 2005-04-13
EP1182696A3 (en) 2005-05-25
KR100450101B1 (ko) 2004-09-24
US20020080551A1 (en) 2002-06-27
CN1340832A (zh) 2002-03-20

Similar Documents

Publication Publication Date Title
US6477036B2 (en) Temperature compensating thin-film capacitor
US6747334B2 (en) Thin-film capacitor device
JP5159776B2 (ja) キャパシタ，共振器、フィルタ装置，通信装置、並びに電気回路
JP7060213B2 (ja) 誘電体磁器組成物及びこれを含む積層セラミックキャパシタ
US8194387B2 (en) Electrostrictive resonance suppression for tunable capacitors
JP2001118731A (ja) チップ型複合電子部品およびその製造方法
KR102222606B1 (ko) 유전체 조성물 및 이를 포함하는 적층 세라믹 커패시터
JP2002252143A (ja) 温度補償用薄膜コンデンサ及び電子機器
US20170008806A1 (en) Dielectric ceramic composition and multilayer ceramic capacitor containing the same
US12597567B2 (en) Single layer capacitor
US10679793B2 (en) Roll-up type capacitor and process for producing the same
TWI227503B (en) Thin film capacitor for reducing power supply noise
JP4088477B2 (ja) 薄膜容量素子および薄膜積層コンデンサ
JPS6094716A (ja) 薄膜コンデンサ
WO2004044935A1 (ja) コンデンサ複合回路素子およびｉｃカード積層コンデンサ
HK40123961A (zh) 单层电容器
JPH01315124A (ja) 薄膜コンデンサ
CN116137206A (zh) 层叠陶瓷电子器件及其制造方法
JPH03239303A (ja) 積層バリスタ
JPS61158127A (ja) セラミツクコンデンサ
JPH0322044B2 (enExample)
JP2006093322A (ja) 可変容量コンデンサ
JP2006093323A (ja) 可変容量コンデンサ
JP2000252152A (ja) 積層セラミックコンデンサ
JP2003318321A (ja) 高周波モジュール

Legal Events

Date Code Title Description
RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20051114

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20060213

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20060221

A761 Written withdrawal of application

Free format text: JAPANESE INTERMEDIATE CODE: A761

Effective date: 20060406