KR100450101B1 - 온도 보상용 박막 콘덴서 - Google Patents

온도 보상용 박막 콘덴서 Download PDF

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Publication number
KR100450101B1
KR100450101B1 KR10-2001-0048689A KR20010048689A KR100450101B1 KR 100450101 B1 KR100450101 B1 KR 100450101B1 KR 20010048689 A KR20010048689 A KR 20010048689A KR 100450101 B1 KR100450101 B1 KR 100450101B1
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KR
South Korea
Prior art keywords
thin film
dielectric
dielectric thin
capacitor
film capacitor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR10-2001-0048689A
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English (en)
Korean (ko)
Other versions
KR20020016508A (ko
Inventor
기따가와히또시
사사끼마꼬또
Original Assignee
알프스 덴키 가부시키가이샤
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Publication of KR20020016508A publication Critical patent/KR20020016508A/ko
Application granted granted Critical
Publication of KR100450101B1 publication Critical patent/KR100450101B1/ko
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/33—Thin- or thick-film capacitors (thin- or thick-film circuits; capacitors without a potential-jump or surface barrier specially adapted for integrated circuits, details thereof, multistep manufacturing processes therefor)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/20—Dielectrics using combinations of dielectrics from more than one of groups H01G4/02 - H01G4/06
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Inorganic Insulating Materials (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
  • Ceramic Capacitors (AREA)
KR10-2001-0048689A 2000-08-25 2001-08-13 온도 보상용 박막 콘덴서 Expired - Fee Related KR100450101B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000256405A JP2002075783A (ja) 2000-08-25 2000-08-25 温度補償用薄膜コンデンサ
JPJP-P-2000-00256405 2000-08-25

Publications (2)

Publication Number Publication Date
KR20020016508A KR20020016508A (ko) 2002-03-04
KR100450101B1 true KR100450101B1 (ko) 2004-09-24

Family

ID=18745021

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2001-0048689A Expired - Fee Related KR100450101B1 (ko) 2000-08-25 2001-08-13 온도 보상용 박막 콘덴서

Country Status (5)

Country Link
US (1) US6477036B2 (enExample)
EP (1) EP1182696A3 (enExample)
JP (1) JP2002075783A (enExample)
KR (1) KR100450101B1 (enExample)
CN (1) CN1197103C (enExample)

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JP2004095638A (ja) * 2002-08-29 2004-03-25 Fujitsu Ltd 薄膜デカップリングキャパシタとその製造方法
US20040061990A1 (en) * 2002-09-26 2004-04-01 Dougherty T. Kirk Temperature-compensated ferroelectric capacitor device, and its fabrication
US20060000542A1 (en) * 2004-06-30 2006-01-05 Yongki Min Metal oxide ceramic thin film on base metal electrode
US7216406B2 (en) * 2004-09-29 2007-05-15 Intel Corporation Method forming split thin film capacitors with multiple voltages
US7290315B2 (en) * 2004-10-21 2007-11-06 Intel Corporation Method for making a passive device structure
US20060099803A1 (en) * 2004-10-26 2006-05-11 Yongki Min Thin film capacitor
US9572258B2 (en) * 2004-12-30 2017-02-14 Intel Corporation Method of forming a substrate core with embedded capacitor and structures formed thereby
US7372126B2 (en) * 2005-03-31 2008-05-13 Intel Corporation Organic substrates with embedded thin-film capacitors, methods of making same, and systems containing same
US7375412B1 (en) * 2005-03-31 2008-05-20 Intel Corporation iTFC with optimized C(T)
US7629269B2 (en) * 2005-03-31 2009-12-08 Intel Corporation High-k thin film grain size control
US20060220177A1 (en) * 2005-03-31 2006-10-05 Palanduz Cengiz A Reduced porosity high-k thin film mixed grains for thin film capacitor applications
US7288459B2 (en) * 2005-03-31 2007-10-30 Intel Corporation Organic substrates with integral thin-film capacitors, methods of making same, and systems containing same
US7453144B2 (en) * 2005-06-29 2008-11-18 Intel Corporation Thin film capacitors and methods of making the same
JP2010192466A (ja) * 2007-04-27 2010-09-02 Nec Corp 広帯域容量素子
KR101420773B1 (ko) * 2009-07-15 2014-07-17 주성엔지니어링(주) 전기광학소자 및 이의 제작 방법
JP5120406B2 (ja) * 2010-03-31 2013-01-16 Ｔｄｋ株式会社 セラミック電子部品及びセラミック電子部品の製造方法
WO2013009772A1 (en) 2011-07-11 2013-01-17 Quantumscape Corporation Solid state energy storage devices
US9087645B2 (en) 2012-01-30 2015-07-21 QuantrumScape Corporation Solid state energy storage devices
JP5441020B1 (ja) * 2012-08-29 2014-03-12 Ｔｏｔｏ株式会社 静電チャック
JP5936087B2 (ja) * 2014-10-07 2016-06-15 国立大学法人 岡山大学 薄膜型水素ガスセンサ
US10115527B2 (en) * 2015-03-09 2018-10-30 Blackberry Limited Thin film dielectric stack
US10122357B2 (en) * 2016-11-14 2018-11-06 Ford Global Technologies, Llc Sensorless temperature compensation for power switching devices
US11942418B2 (en) * 2021-07-23 2024-03-26 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structure and method for making the same
JP7682759B2 (ja) * 2021-09-30 2025-05-26 Tdk株式会社 薄膜キャパシタ、電源モジュールおよび電子機器

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US88216A (en) * 1869-03-23 Improved crushing and q-rindino-machine
US5638252A (en) * 1995-06-14 1997-06-10 Hughes Aircraft Company Electrical device and method utilizing a positive-temperature-coefficient ferroelectric capacitor
KR19980042343A (ko) * 1996-11-13 1998-08-17 가네꼬히사시 유전율의 감소가 방지될 수 있는 박막 캐패시터 구조
US5978207A (en) * 1996-10-30 1999-11-02 The Research Foundation Of The State University Of New York Thin film capacitor
US6088216A (en) * 1995-04-28 2000-07-11 International Business Machines Corporation Lead silicate based capacitor structures

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JPS4870855A (enExample) * 1971-12-29 1973-09-26
JPS5873908A (ja) 1981-10-28 1983-05-04 ティーディーケイ株式会社 高周波用誘電体磁器組成物
US4423087A (en) * 1981-12-28 1983-12-27 International Business Machines Corporation Thin film capacitor with a dual bottom electrode structure
JPS62222512A (ja) * 1986-03-20 1987-09-30 キヤノン株式会社 誘電体材料
JPS63110618A (ja) * 1986-10-28 1988-05-16 沖電気工業株式会社 積層型マイクロ波用誘電体磁器組成物
EP0356212B1 (en) 1988-08-25 1993-04-28 Matsushita Electric Industrial Co., Ltd. Thin-film capacitor and method of manufacturing a hybrid microwave integrated circuit
JPH03252160A (ja) * 1990-02-28 1991-11-11 Nec Corp コンデンサ、コンデンサネットワーク及び抵抗―コンデンサネットワーク
EP0749134B1 (en) 1995-06-16 2002-10-02 AT&T IPM Corp. Dielectric material comprising Ta2O5 doped with TiO2 and devices employing same
US6236102B1 (en) * 1997-12-13 2001-05-22 Samsung Electro-Mechanics Co., Ltd. Chip type thin film capacitor, and manufacturing method therefor
JP2000183289A (ja) * 1998-12-18 2000-06-30 Murata Mfg Co Ltd 誘電体素子の特性制御方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US88216A (en) * 1869-03-23 Improved crushing and q-rindino-machine
US6088216A (en) * 1995-04-28 2000-07-11 International Business Machines Corporation Lead silicate based capacitor structures
US5638252A (en) * 1995-06-14 1997-06-10 Hughes Aircraft Company Electrical device and method utilizing a positive-temperature-coefficient ferroelectric capacitor
US5978207A (en) * 1996-10-30 1999-11-02 The Research Foundation Of The State University Of New York Thin film capacitor
KR19980042343A (ko) * 1996-11-13 1998-08-17 가네꼬히사시 유전율의 감소가 방지될 수 있는 박막 캐패시터 구조

Also Published As

Publication number Publication date
EP1182696A2 (en) 2002-02-27
KR20020016508A (ko) 2002-03-04
JP2002075783A (ja) 2002-03-15
CN1197103C (zh) 2005-04-13
EP1182696A3 (en) 2005-05-25
US20020080551A1 (en) 2002-06-27
US6477036B2 (en) 2002-11-05
CN1340832A (zh) 2002-03-20

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