JP2002026125A5 - - Google Patents

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Publication number
JP2002026125A5
JP2002026125A5 JP2000207911A JP2000207911A JP2002026125A5 JP 2002026125 A5 JP2002026125 A5 JP 2002026125A5 JP 2000207911 A JP2000207911 A JP 2000207911A JP 2000207911 A JP2000207911 A JP 2000207911A JP 2002026125 A5 JP2002026125 A5 JP 2002026125A5
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2000207911A
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JP4794030B2 (ja
JP2002026125A (ja
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Priority claimed from JP2000207911A external-priority patent/JP4794030B2/ja
Priority to JP2000207911A priority Critical patent/JP4794030B2/ja
Priority to US09/818,907 priority patent/US6635935B2/en
Priority to TW090107363A priority patent/TW490807B/zh
Priority to CNB011174986A priority patent/CN1199285C/zh
Priority to KR10-2001-0025384A priority patent/KR100392715B1/ko
Publication of JP2002026125A publication Critical patent/JP2002026125A/ja
Publication of JP2002026125A5 publication Critical patent/JP2002026125A5/ja
Publication of JP4794030B2 publication Critical patent/JP4794030B2/ja
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2000207911A 2000-07-10 2000-07-10 半導体装置 Expired - Fee Related JP4794030B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2000207911A JP4794030B2 (ja) 2000-07-10 2000-07-10 半導体装置
US09/818,907 US6635935B2 (en) 2000-07-10 2001-03-28 Semiconductor device cell having regularly sized and arranged features
TW090107363A TW490807B (en) 2000-07-10 2001-03-28 Semiconductor device
KR10-2001-0025384A KR100392715B1 (ko) 2000-07-10 2001-05-10 반도체 장치
CNB011174986A CN1199285C (zh) 2000-07-10 2001-05-10 半导体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000207911A JP4794030B2 (ja) 2000-07-10 2000-07-10 半導体装置

Publications (3)

Publication Number Publication Date
JP2002026125A JP2002026125A (ja) 2002-01-25
JP2002026125A5 true JP2002026125A5 (ja) 2008-07-31
JP4794030B2 JP4794030B2 (ja) 2011-10-12

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000207911A Expired - Fee Related JP4794030B2 (ja) 2000-07-10 2000-07-10 半導体装置

Country Status (5)

Country Link
US (1) US6635935B2 (ja)
JP (1) JP4794030B2 (ja)
KR (1) KR100392715B1 (ja)
CN (1) CN1199285C (ja)
TW (1) TW490807B (ja)

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US8756551B2 (en) 2007-08-02 2014-06-17 Tela Innovations, Inc. Methods for designing semiconductor device with dynamic array section
US8759985B2 (en) 2008-03-27 2014-06-24 Tela Innovations, Inc. Methods for multi-wire routing and apparatus implementing same

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JP4778689B2 (ja) 2004-06-16 2011-09-21 パナソニック株式会社 標準セル、標準セルライブラリおよび半導体集積回路
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JP2007129094A (ja) * 2005-11-04 2007-05-24 Rohm Co Ltd 半導体装置
JP5091462B2 (ja) * 2006-01-19 2012-12-05 パナソニック株式会社 セルおよび半導体装置
US8839175B2 (en) 2006-03-09 2014-09-16 Tela Innovations, Inc. Scalable meta-data objects
US7446352B2 (en) 2006-03-09 2008-11-04 Tela Innovations, Inc. Dynamic array architecture
US9230910B2 (en) 2006-03-09 2016-01-05 Tela Innovations, Inc. Oversized contacts and vias in layout defined by linearly constrained topology
US7956421B2 (en) 2008-03-13 2011-06-07 Tela Innovations, Inc. Cross-coupled transistor layouts in restricted gate level layout architecture
US9009641B2 (en) 2006-03-09 2015-04-14 Tela Innovations, Inc. Circuits with linear finfet structures
US8448102B2 (en) 2006-03-09 2013-05-21 Tela Innovations, Inc. Optimizing layout of irregular structures in regular layout context
US8658542B2 (en) 2006-03-09 2014-02-25 Tela Innovations, Inc. Coarse grid design methods and structures
US8225239B2 (en) 2006-03-09 2012-07-17 Tela Innovations, Inc. Methods for defining and utilizing sub-resolution features in linear topology
US8653857B2 (en) 2006-03-09 2014-02-18 Tela Innovations, Inc. Circuitry and layouts for XOR and XNOR logic
US8225261B2 (en) 2006-03-09 2012-07-17 Tela Innovations, Inc. Methods for defining contact grid in dynamic array architecture
US8247846B2 (en) 2006-03-09 2012-08-21 Tela Innovations, Inc. Oversized contacts and vias in semiconductor chip defined by linearly constrained topology
US8245180B2 (en) 2006-03-09 2012-08-14 Tela Innovations, Inc. Methods for defining and using co-optimized nanopatterns for integrated circuit design and apparatus implementing same
US9563733B2 (en) 2009-05-06 2017-02-07 Tela Innovations, Inc. Cell circuit and layout with linear finfet structures
US8541879B2 (en) 2007-12-13 2013-09-24 Tela Innovations, Inc. Super-self-aligned contacts and method for making the same
US9035359B2 (en) 2006-03-09 2015-05-19 Tela Innovations, Inc. Semiconductor chip including region including linear-shaped conductive structures forming gate electrodes and having electrical connection areas arranged relative to inner region between transistors of different types and associated methods
US7763534B2 (en) 2007-10-26 2010-07-27 Tela Innovations, Inc. Methods, structures and designs for self-aligning local interconnects used in integrated circuits
US7321139B2 (en) * 2006-05-26 2008-01-22 Taiwan Semiconductor Manufacturing Co., Ltd. Transistor layout for standard cell with optimized mechanical stress effect
US7873929B2 (en) * 2006-08-14 2011-01-18 The Regents Of The University Of California Method, apparatus and system for designing an integrated circuit including generating at least one auxiliary pattern for cell-based optical proximity correction
US8286107B2 (en) 2007-02-20 2012-10-09 Tela Innovations, Inc. Methods and systems for process compensation technique acceleration
US8667443B2 (en) 2007-03-05 2014-03-04 Tela Innovations, Inc. Integrated circuit cell library for multiple patterning
US8053346B2 (en) * 2007-04-30 2011-11-08 Hynix Semiconductor Inc. Semiconductor device and method of forming gate and metal line thereof with dummy pattern and auxiliary pattern
JP2009170807A (ja) * 2008-01-18 2009-07-30 Elpida Memory Inc ダミーゲートパターンを備える半導体装置
US8453094B2 (en) 2008-01-31 2013-05-28 Tela Innovations, Inc. Enforcement of semiconductor structure regularity for localized transistors and interconnect
US20110075387A1 (en) * 2008-05-21 2011-03-31 Homer Steven S Strain Measurement Chips For Printed Circuit Boards
SG10201608214SA (en) 2008-07-16 2016-11-29 Tela Innovations Inc Methods for cell phasing and placement in dynamic array architecture and implementation of the same
US9122832B2 (en) 2008-08-01 2015-09-01 Tela Innovations, Inc. Methods for controlling microloading variation in semiconductor wafer layout and fabrication
US7750400B2 (en) * 2008-08-15 2010-07-06 Texas Instruments Incorporated Integrated circuit modeling, design, and fabrication based on degradation mechanisms
JP5147654B2 (ja) * 2008-11-18 2013-02-20 パナソニック株式会社 半導体装置
JP4947064B2 (ja) * 2009-01-09 2012-06-06 セイコーエプソン株式会社 半導体装置の製造方法
JP5537078B2 (ja) 2009-07-23 2014-07-02 ルネサスエレクトロニクス株式会社 半導体装置
WO2011039792A1 (ja) * 2009-09-29 2011-04-07 株式会社 東芝 半導体装置
US8661392B2 (en) 2009-10-13 2014-02-25 Tela Innovations, Inc. Methods for cell boundary encroachment and layouts implementing the Same
US9159627B2 (en) 2010-11-12 2015-10-13 Tela Innovations, Inc. Methods for linewidth modification and apparatus implementing the same
US9123562B2 (en) * 2011-09-19 2015-09-01 Texas Instruments Incorporated Layout method to minimize context effects and die area
US20130320451A1 (en) 2012-06-01 2013-12-05 Taiwan Semiconductor Manufacturing Company, Ltd., ("Tsmc") Semiconductor device having non-orthogonal element
CN103633047B (zh) * 2012-08-29 2016-12-21 瑞昱半导体股份有限公司 一种电子装置
US9123565B2 (en) * 2012-12-31 2015-09-01 Taiwan Semiconductor Manufacturing Company, Ltd. Masks formed based on integrated circuit layout design having standard cell that includes extended active region
US9292647B2 (en) * 2014-01-24 2016-03-22 Globalfoundries Inc. Method and apparatus for modified cell architecture and the resulting device
CN108701653B (zh) * 2016-02-25 2022-07-29 株式会社索思未来 半导体集成电路装置
US11094695B2 (en) * 2019-05-17 2021-08-17 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated circuit device and method of forming the same
CN112864162B (zh) * 2021-03-02 2022-07-19 长江存储科技有限责任公司 一种页缓冲器、场效应晶体管及三维存储器

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8756551B2 (en) 2007-08-02 2014-06-17 Tela Innovations, Inc. Methods for designing semiconductor device with dynamic array section
US8759882B2 (en) 2007-08-02 2014-06-24 Tela Innovations, Inc. Semiconductor device with dynamic array sections defined and placed according to manufacturing assurance halos
US8759985B2 (en) 2008-03-27 2014-06-24 Tela Innovations, Inc. Methods for multi-wire routing and apparatus implementing same

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