JP2001345267A5 - - Google Patents
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- Publication number
- JP2001345267A5 JP2001345267A5 JP2001084251A JP2001084251A JP2001345267A5 JP 2001345267 A5 JP2001345267 A5 JP 2001345267A5 JP 2001084251 A JP2001084251 A JP 2001084251A JP 2001084251 A JP2001084251 A JP 2001084251A JP 2001345267 A5 JP2001345267 A5 JP 2001345267A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor layer
- film
- manufacturing
- mask
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 description 41
- 239000010410 layer Substances 0.000 description 28
- 238000004519 manufacturing process Methods 0.000 description 18
- 239000000758 substrate Substances 0.000 description 12
- 238000002834 transmittance Methods 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 238000005530 etching Methods 0.000 description 8
- 239000011347 resin Substances 0.000 description 7
- 229920005989 resin Polymers 0.000 description 7
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N Silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 6
- 230000001678 irradiating Effects 0.000 description 5
- 230000000051 modifying Effects 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 239000000956 alloy Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- -1 indium tin oxide alloy Chemical class 0.000 description 3
- TWXTWZIUMCFMSG-UHFFFAOYSA-N nitride(3-) Chemical compound [N-3] TWXTWZIUMCFMSG-UHFFFAOYSA-N 0.000 description 3
- 239000011787 zinc oxide Substances 0.000 description 3
- UMIVXZPTRXBADB-UHFFFAOYSA-N Benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N HCl Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 229920001721 Polyimide Polymers 0.000 description 2
- HGCGQDMQKGRJNO-UHFFFAOYSA-N Xenon monochloride Chemical compound [Xe]Cl HGCGQDMQKGRJNO-UHFFFAOYSA-N 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- 229910052904 quartz Inorganic materials 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- WKODDKLNZNVCSL-UHFFFAOYSA-N 1,3,2$l^{2},4$l^{2}-oxazadisiletidine Chemical compound N1[Si]O[Si]1 WKODDKLNZNVCSL-UHFFFAOYSA-N 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N Indium(III) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229920001709 Polysilazane Polymers 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- URLKBWYHVLBVBO-UHFFFAOYSA-N p-xylene Chemical group CC1=CC=C(C)C=C1 URLKBWYHVLBVBO-UHFFFAOYSA-N 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229920000052 poly(p-xylylene) Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 125000005373 siloxane group Chemical group [SiH2](O*)* 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001084251A JP4986333B2 (ja) | 2000-03-27 | 2001-03-23 | 半導体装置の作製方法 |
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000-133000 | 2000-03-27 | ||
| JP2000133000 | 2000-03-27 | ||
| JP2000133000 | 2000-03-27 | ||
| JP2001084251A JP4986333B2 (ja) | 2000-03-27 | 2001-03-23 | 半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2001345267A JP2001345267A (ja) | 2001-12-14 |
| JP2001345267A5 true JP2001345267A5 (zh) | 2008-03-21 |
| JP4986333B2 JP4986333B2 (ja) | 2012-07-25 |
Family
ID=26591389
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001084251A Expired - Fee Related JP4986333B2 (ja) | 2000-03-27 | 2001-03-23 | 半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4986333B2 (zh) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003330388A (ja) | 2002-05-15 | 2003-11-19 | Semiconductor Energy Lab Co Ltd | 半導体装置及びその作製方法 |
| JP2004152978A (ja) * | 2002-10-30 | 2004-05-27 | Sumitomo Heavy Ind Ltd | シリコン膜加工方法 |
| JP4897210B2 (ja) * | 2004-11-18 | 2012-03-14 | ラピスセミコンダクタ株式会社 | 半導体装置の構造及びその製造方法 |
| JP5525845B2 (ja) * | 2010-02-08 | 2014-06-18 | 富士フイルム株式会社 | 半導体装置およびその製造方法 |
| JP5676326B2 (ja) * | 2011-03-18 | 2015-02-25 | 富士フイルム株式会社 | 電界効果型トランジスタ |
| CN110875356A (zh) * | 2018-08-30 | 2020-03-10 | 上海和辉光电有限公司 | 一种柔性显示母板、柔性amoled显示面板及柔性显示器件 |
| CN113305106B (zh) * | 2021-06-03 | 2022-08-02 | 四川大学 | 一种激光清洗微纳颗粒污染物的方法和应用 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57181537A (en) * | 1981-05-01 | 1982-11-09 | Agency Of Ind Science & Technol | Light pattern projector |
| JPS5963720A (ja) * | 1982-10-04 | 1984-04-11 | Agency Of Ind Science & Technol | 半導体単結晶の成長方法 |
| JPH01162320A (ja) * | 1987-12-19 | 1989-06-26 | Agency Of Ind Science & Technol | 半導体薄膜形成方法 |
| JPH0777795A (ja) * | 1993-09-09 | 1995-03-20 | Hoya Corp | ハーフトーン型位相シフトマスクの製造方法 |
| JPH07100686A (ja) * | 1993-09-30 | 1995-04-18 | Brother Ind Ltd | レーザ加工装置 |
| JP3270881B2 (ja) * | 1994-07-01 | 2002-04-02 | ソニー株式会社 | ハーフトーン方式位相シフトマスクの作製方法 |
| JP3476320B2 (ja) * | 1996-02-23 | 2003-12-10 | 株式会社半導体エネルギー研究所 | 半導体薄膜およびその作製方法ならびに半導体装置およびその作製方法 |
| JPH10150200A (ja) * | 1996-11-19 | 1998-06-02 | Sharp Corp | 薄膜トランジスタおよびその製造方法 |
| JP3642546B2 (ja) * | 1997-08-12 | 2005-04-27 | 株式会社東芝 | 多結晶半導体薄膜の製造方法 |
| JP2929005B1 (ja) * | 1998-07-01 | 1999-08-03 | 科学技術庁金属材料技術研究所長 | Ｓｉ微結晶構造の製造方法 |
| JP2000058835A (ja) * | 1998-07-31 | 2000-02-25 | Semiconductor Energy Lab Co Ltd | 薄膜トランジスタおよびその作製方法 |
-
2001
- 2001-03-23 JP JP2001084251A patent/JP4986333B2/ja not_active Expired - Fee Related
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