JP4986333B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP4986333B2
JP4986333B2 JP2001084251A JP2001084251A JP4986333B2 JP 4986333 B2 JP4986333 B2 JP 4986333B2 JP 2001084251 A JP2001084251 A JP 2001084251A JP 2001084251 A JP2001084251 A JP 2001084251A JP 4986333 B2 JP4986333 B2 JP 4986333B2
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film
region
substrate
laser light
semiconductor layer
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Expired - Fee Related
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Japanese (ja)
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JP2001345267A5 (zh
JP2001345267A (ja
Inventor
健司 笠原
律子 河崎
久 大谷
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
JP2001084251A 2000-03-27 2001-03-23 半導体装置の作製方法 Expired - Fee Related JP4986333B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001084251A JP4986333B2 (ja) 2000-03-27 2001-03-23 半導体装置の作製方法

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2000-133000 2000-03-27
JP2000133000 2000-03-27
JP2000133000 2000-03-27
JP2001084251A JP4986333B2 (ja) 2000-03-27 2001-03-23 半導体装置の作製方法

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JP2001345267A JP2001345267A (ja) 2001-12-14
JP2001345267A5 JP2001345267A5 (zh) 2008-03-21
JP4986333B2 true JP4986333B2 (ja) 2012-07-25

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JP2001084251A Expired - Fee Related JP4986333B2 (ja) 2000-03-27 2001-03-23 半導体装置の作製方法

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Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003330388A (ja) 2002-05-15 2003-11-19 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法
JP2004152978A (ja) * 2002-10-30 2004-05-27 Sumitomo Heavy Ind Ltd シリコン膜加工方法
JP4897210B2 (ja) * 2004-11-18 2012-03-14 ラピスセミコンダクタ株式会社 半導体装置の構造及びその製造方法
JP5525845B2 (ja) * 2010-02-08 2014-06-18 富士フイルム株式会社 半導体装置およびその製造方法
JP5676326B2 (ja) * 2011-03-18 2015-02-25 富士フイルム株式会社 電界効果型トランジスタ
CN110875356A (zh) * 2018-08-30 2020-03-10 上海和辉光电有限公司 一种柔性显示母板、柔性amoled显示面板及柔性显示器件
CN113305106B (zh) * 2021-06-03 2022-08-02 四川大学 一种激光清洗微纳颗粒污染物的方法和应用

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57181537A (en) * 1981-05-01 1982-11-09 Agency Of Ind Science & Technol Light pattern projector
JPS5963720A (ja) * 1982-10-04 1984-04-11 Agency Of Ind Science & Technol 半導体単結晶の成長方法
JPH01162320A (ja) * 1987-12-19 1989-06-26 Agency Of Ind Science & Technol 半導体薄膜形成方法
JPH0777795A (ja) * 1993-09-09 1995-03-20 Hoya Corp ハーフトーン型位相シフトマスクの製造方法
JPH07100686A (ja) * 1993-09-30 1995-04-18 Brother Ind Ltd レーザ加工装置
JP3270881B2 (ja) * 1994-07-01 2002-04-02 ソニー株式会社 ハーフトーン方式位相シフトマスクの作製方法
JP3476320B2 (ja) * 1996-02-23 2003-12-10 株式会社半導体エネルギー研究所 半導体薄膜およびその作製方法ならびに半導体装置およびその作製方法
JPH10150200A (ja) * 1996-11-19 1998-06-02 Sharp Corp 薄膜トランジスタおよびその製造方法
JP3642546B2 (ja) * 1997-08-12 2005-04-27 株式会社東芝 多結晶半導体薄膜の製造方法
JP2929005B1 (ja) * 1998-07-01 1999-08-03 科学技術庁金属材料技術研究所長 Ｓｉ微結晶構造の製造方法
JP2000058835A (ja) * 1998-07-31 2000-02-25 Semiconductor Energy Lab Co Ltd 薄膜トランジスタおよびその作製方法

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