JP4986333B2 - 半導体装置の作製方法 - Google Patents
半導体装置の作製方法 Download PDFInfo
- Publication number
- JP4986333B2 JP4986333B2 JP2001084251A JP2001084251A JP4986333B2 JP 4986333 B2 JP4986333 B2 JP 4986333B2 JP 2001084251 A JP2001084251 A JP 2001084251A JP 2001084251 A JP2001084251 A JP 2001084251A JP 4986333 B2 JP4986333 B2 JP 4986333B2
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- film
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- substrate
- laser light
- semiconductor layer
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Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001084251A JP4986333B2 (ja) | 2000-03-27 | 2001-03-23 | 半導体装置の作製方法 |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000-133000 | 2000-03-27 | ||
JP2000133000 | 2000-03-27 | ||
JP2000133000 | 2000-03-27 | ||
JP2001084251A JP4986333B2 (ja) | 2000-03-27 | 2001-03-23 | 半導体装置の作製方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2001345267A JP2001345267A (ja) | 2001-12-14 |
JP2001345267A5 JP2001345267A5 (zh) | 2008-03-21 |
JP4986333B2 true JP4986333B2 (ja) | 2012-07-25 |
Family
ID=26591389
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2001084251A Expired - Fee Related JP4986333B2 (ja) | 2000-03-27 | 2001-03-23 | 半導体装置の作製方法 |
Country Status (1)
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JP (1) | JP4986333B2 (zh) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003330388A (ja) | 2002-05-15 | 2003-11-19 | Semiconductor Energy Lab Co Ltd | 半導体装置及びその作製方法 |
JP2004152978A (ja) * | 2002-10-30 | 2004-05-27 | Sumitomo Heavy Ind Ltd | シリコン膜加工方法 |
JP4897210B2 (ja) * | 2004-11-18 | 2012-03-14 | ラピスセミコンダクタ株式会社 | 半導体装置の構造及びその製造方法 |
JP5525845B2 (ja) * | 2010-02-08 | 2014-06-18 | 富士フイルム株式会社 | 半導体装置およびその製造方法 |
JP5676326B2 (ja) * | 2011-03-18 | 2015-02-25 | 富士フイルム株式会社 | 電界効果型トランジスタ |
CN110875356A (zh) * | 2018-08-30 | 2020-03-10 | 上海和辉光电有限公司 | 一种柔性显示母板、柔性amoled显示面板及柔性显示器件 |
CN113305106B (zh) * | 2021-06-03 | 2022-08-02 | 四川大学 | 一种激光清洗微纳颗粒污染物的方法和应用 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57181537A (en) * | 1981-05-01 | 1982-11-09 | Agency Of Ind Science & Technol | Light pattern projector |
JPS5963720A (ja) * | 1982-10-04 | 1984-04-11 | Agency Of Ind Science & Technol | 半導体単結晶の成長方法 |
JPH01162320A (ja) * | 1987-12-19 | 1989-06-26 | Agency Of Ind Science & Technol | 半導体薄膜形成方法 |
JPH0777795A (ja) * | 1993-09-09 | 1995-03-20 | Hoya Corp | ハーフトーン型位相シフトマスクの製造方法 |
JPH07100686A (ja) * | 1993-09-30 | 1995-04-18 | Brother Ind Ltd | レーザ加工装置 |
JP3270881B2 (ja) * | 1994-07-01 | 2002-04-02 | ソニー株式会社 | ハーフトーン方式位相シフトマスクの作製方法 |
JP3476320B2 (ja) * | 1996-02-23 | 2003-12-10 | 株式会社半導体エネルギー研究所 | 半導体薄膜およびその作製方法ならびに半導体装置およびその作製方法 |
JPH10150200A (ja) * | 1996-11-19 | 1998-06-02 | Sharp Corp | 薄膜トランジスタおよびその製造方法 |
JP3642546B2 (ja) * | 1997-08-12 | 2005-04-27 | 株式会社東芝 | 多結晶半導体薄膜の製造方法 |
JP2929005B1 (ja) * | 1998-07-01 | 1999-08-03 | 科学技術庁金属材料技術研究所長 | Si微結晶構造の製造方法 |
JP2000058835A (ja) * | 1998-07-31 | 2000-02-25 | Semiconductor Energy Lab Co Ltd | 薄膜トランジスタおよびその作製方法 |
-
2001
- 2001-03-23 JP JP2001084251A patent/JP4986333B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
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JP2001345267A (ja) | 2001-12-14 |
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