JP2001332741A - 薄膜トランジスタの製造方法 - Google Patents

薄膜トランジスタの製造方法

Info

Publication number
JP2001332741A
JP2001332741A JP2000154049A JP2000154049A JP2001332741A JP 2001332741 A JP2001332741 A JP 2001332741A JP 2000154049 A JP2000154049 A JP 2000154049A JP 2000154049 A JP2000154049 A JP 2000154049A JP 2001332741 A JP2001332741 A JP 2001332741A
Authority
JP
Japan
Prior art keywords
thin film
semiconductor thin
film
display device
protective film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000154049A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001332741A5 (enExample
Inventor
Masato Takatoku
真人 高徳
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2000154049A priority Critical patent/JP2001332741A/ja
Priority to TW090112525A priority patent/TW519764B/zh
Priority to US09/865,104 priority patent/US6599783B2/en
Priority to KR1020010029012A priority patent/KR20010107764A/ko
Publication of JP2001332741A publication Critical patent/JP2001332741A/ja
Priority to US10/454,297 priority patent/US20030211667A1/en
Priority to US10/453,952 priority patent/US20030211668A1/en
Publication of JP2001332741A5 publication Critical patent/JP2001332741A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
    • H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/451—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by the compositions or shapes of the interlayer dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nonlinear Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
  • Recrystallisation Techniques (AREA)
  • Weting (AREA)
JP2000154049A 2000-05-25 2000-05-25 薄膜トランジスタの製造方法 Pending JP2001332741A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2000154049A JP2001332741A (ja) 2000-05-25 2000-05-25 薄膜トランジスタの製造方法
TW090112525A TW519764B (en) 2000-05-25 2001-05-24 Method of fabricating thin film transistor
US09/865,104 US6599783B2 (en) 2000-05-25 2001-05-24 Method of fabricating a thin film including a protective layer as a mask
KR1020010029012A KR20010107764A (ko) 2000-05-25 2001-05-25 박막 트랜지스터 제조 방법
US10/454,297 US20030211667A1 (en) 2000-05-25 2003-06-04 Method of fabricating thin film transistor
US10/453,952 US20030211668A1 (en) 2000-05-25 2003-06-04 Method of fabricating thin film transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000154049A JP2001332741A (ja) 2000-05-25 2000-05-25 薄膜トランジスタの製造方法

Publications (2)

Publication Number Publication Date
JP2001332741A true JP2001332741A (ja) 2001-11-30
JP2001332741A5 JP2001332741A5 (enExample) 2007-06-07

Family

ID=18659203

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000154049A Pending JP2001332741A (ja) 2000-05-25 2000-05-25 薄膜トランジスタの製造方法

Country Status (4)

Country Link
US (3) US6599783B2 (enExample)
JP (1) JP2001332741A (enExample)
KR (1) KR20010107764A (enExample)
TW (1) TW519764B (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2391386A (en) * 2002-06-06 2004-02-04 Nec Corp Method for forming pattern of stacked film
US7303945B2 (en) 2002-06-06 2007-12-04 Nec Corporation Method for forming pattern of stacked film and thin film transistor
US8362487B2 (en) 2002-06-11 2013-01-29 Semiconductor Energy Laboratory Co., Ltd. Light emitting device comprising film having hygroscopic property and transparency
CN104299977A (zh) * 2013-07-16 2015-01-21 索尼公司 放射线摄像装置和放射线摄像显示系统

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002076352A (ja) * 2000-08-31 2002-03-15 Semiconductor Energy Lab Co Ltd 表示装置及びその作製方法
TW525402B (en) 2001-01-18 2003-03-21 Semiconductor Energy Lab Process for producing a light emitting device
KR100766493B1 (ko) * 2001-02-12 2007-10-15 삼성전자주식회사 박막트랜지스터 액정표시장치
SG143944A1 (en) 2001-02-19 2008-07-29 Semiconductor Energy Lab Light emitting device and method of manufacturing the same
US6720198B2 (en) * 2001-02-19 2004-04-13 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and manufacturing method thereof
KR100437475B1 (ko) * 2001-04-13 2004-06-23 삼성에스디아이 주식회사 평판 디스플레이 장치용 표시 소자 제조 방법
US7211828B2 (en) 2001-06-20 2007-05-01 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and electronic apparatus
TW548860B (en) 2001-06-20 2003-08-21 Semiconductor Energy Lab Light emitting device and method of manufacturing the same
JP2003168645A (ja) * 2001-12-03 2003-06-13 Hitachi Ltd 半導体薄膜装置、その製造方法及び画像表示装置
TW200302511A (en) 2002-01-28 2003-08-01 Semiconductor Energy Lab Semiconductor device and method of manufacturing the same
US7749818B2 (en) 2002-01-28 2010-07-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
TWI261358B (en) * 2002-01-28 2006-09-01 Semiconductor Energy Lab Semiconductor device and method of manufacturing the same
KR100979926B1 (ko) * 2002-03-05 2010-09-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체소자 및 그것을 사용한 반도체장치
US7579771B2 (en) 2002-04-23 2009-08-25 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and method of manufacturing the same
US7786496B2 (en) * 2002-04-24 2010-08-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing same
JP2003317971A (ja) * 2002-04-26 2003-11-07 Semiconductor Energy Lab Co Ltd 発光装置およびその作製方法
US7897979B2 (en) 2002-06-07 2011-03-01 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and manufacturing method thereof
JP4216008B2 (ja) * 2002-06-27 2009-01-28 株式会社半導体エネルギー研究所 発光装置およびその作製方法、ならびに前記発光装置を有するビデオカメラ、デジタルカメラ、ゴーグル型ディスプレイ、カーナビゲーション、パーソナルコンピュータ、ｄｖｄプレーヤー、電子遊技機器、または携帯情報端末
SG130013A1 (en) * 2002-07-25 2007-03-20 Semiconductor Energy Lab Method of fabricating light emitting device
CN100466285C (zh) * 2002-09-11 2009-03-04 株式会社半导体能源研究所 发光装置及其制造方法
KR100466628B1 (ko) * 2002-11-12 2005-01-15 삼성에스디아이 주식회사 평판표시장치 및 그의 제조방법
JP4373086B2 (ja) 2002-12-27 2009-11-25 株式会社半導体エネルギー研究所 発光装置
US7202504B2 (en) 2004-05-20 2007-04-10 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element and display device
US7112455B2 (en) 2004-06-10 2006-09-26 Freescale Semiconductor, Inc Semiconductor optical devices and method for forming
US20070054429A1 (en) * 2005-08-25 2007-03-08 Tsuan-Lun Lung Back panel manufacturing process
US7675078B2 (en) * 2005-09-14 2010-03-09 Chunghwa Picture Tubes, Ltd. Pixel structure
JP5208591B2 (ja) 2007-06-28 2013-06-12 株式会社半導体エネルギー研究所 発光装置、及び照明装置
JP2009206508A (ja) * 2008-01-31 2009-09-10 Canon Inc 薄膜トランジスタ及び表示装置
KR101510212B1 (ko) * 2008-06-05 2015-04-10 삼성전자주식회사 산화물 반도체 박막 트랜지스터의 제조방법
KR101352237B1 (ko) * 2008-08-13 2014-01-16 엘지디스플레이 주식회사 유기전계발광표시장치의 제조방법
KR20110090408A (ko) * 2010-02-03 2011-08-10 삼성전자주식회사 박막 형성 방법, 표시판용 금속 배선 및 이를 포함하는 박막 트랜지스터 표시판 및 그 제조 방법
TWI588910B (zh) * 2011-11-30 2017-06-21 半導體能源研究所股份有限公司 半導體裝置的製造方法
KR20150137214A (ko) * 2014-05-28 2015-12-09 삼성디스플레이 주식회사 유기발광 디스플레이 장치 및 그 제조방법
KR102716494B1 (ko) * 2016-03-18 2024-10-14 삼성디스플레이 주식회사 박막트랜지스터와 제조 방법, 및 이를 포함하는 유기 발광 표시 장치
CN109585566B (zh) * 2018-11-14 2021-05-18 惠科股份有限公司 一种阵列基板、阵列基板的制作方法和显示面板

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0831789A (ja) * 1994-07-19 1996-02-02 Dainippon Screen Mfg Co Ltd 基板の表面処理装置
JPH08153699A (ja) * 1994-09-16 1996-06-11 Semiconductor Energy Lab Co Ltd 薄膜半導体装置の作製方法
JPH10189252A (ja) * 1996-12-26 1998-07-21 Idemitsu Kosan Co Ltd 有機アクティブｅｌ発光装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0801427A3 (en) * 1996-04-11 1999-05-06 Matsushita Electric Industrial Co., Ltd. Field effect transistor, semiconductor storage device, method of manufacturing the same and method of driving semiconductor storage device
JP3976828B2 (ja) * 1997-02-17 2007-09-19 株式会社半導体エネルギー研究所 結晶性珪素膜の作製方法
US6392720B1 (en) * 1998-12-17 2002-05-21 Lg Electronics, Inc. Substrate structure of a liquid crystal display and a manufacturing method thereof

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0831789A (ja) * 1994-07-19 1996-02-02 Dainippon Screen Mfg Co Ltd 基板の表面処理装置
JPH08153699A (ja) * 1994-09-16 1996-06-11 Semiconductor Energy Lab Co Ltd 薄膜半導体装置の作製方法
JPH10189252A (ja) * 1996-12-26 1998-07-21 Idemitsu Kosan Co Ltd 有機アクティブｅｌ発光装置

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2391386A (en) * 2002-06-06 2004-02-04 Nec Corp Method for forming pattern of stacked film
GB2391386B (en) * 2002-06-06 2004-11-17 Nec Corp Method for forming pattern of stacked film
US6933241B2 (en) 2002-06-06 2005-08-23 Nec Corporation Method for forming pattern of stacked film
US7303945B2 (en) 2002-06-06 2007-12-04 Nec Corporation Method for forming pattern of stacked film and thin film transistor
US7317227B2 (en) 2002-06-06 2008-01-08 Nec Corporation Method for forming pattern of stacked film
US7781837B2 (en) 2002-06-06 2010-08-24 Nec Corporation Stacked film including a semiconductor film having a taper angle, and thin film transistor including the stacked film
US8362487B2 (en) 2002-06-11 2013-01-29 Semiconductor Energy Laboratory Co., Ltd. Light emitting device comprising film having hygroscopic property and transparency
CN104299977A (zh) * 2013-07-16 2015-01-21 索尼公司 放射线摄像装置和放射线摄像显示系统
CN104299977B (zh) * 2013-07-16 2019-06-07 索尼半导体解决方案公司 放射线摄像装置和放射线摄像显示系统

Also Published As

Publication number Publication date
TW519764B (en) 2003-02-01
US20020066902A1 (en) 2002-06-06
US20030211667A1 (en) 2003-11-13
US6599783B2 (en) 2003-07-29
KR20010107764A (ko) 2001-12-07
US20030211668A1 (en) 2003-11-13

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